CN102576705B - 电路装置及其制造方法 - Google Patents

电路装置及其制造方法 Download PDF

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Publication number
CN102576705B
CN102576705B CN201080044718.0A CN201080044718A CN102576705B CN 102576705 B CN102576705 B CN 102576705B CN 201080044718 A CN201080044718 A CN 201080044718A CN 102576705 B CN102576705 B CN 102576705B
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wiring layer
contact devices
middle contact
circuit arrangement
power functions
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CN201080044718.0A
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CN102576705A (zh
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N·舒尔茨
S·哈特曼
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Hitachi Energy Co ltd
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ABB T&D Technology AG
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Abstract

本发明涉及其中安装功率功能器件(16)和导体元件(18)的电路装置(10)，该装置(10)包括衬底(12)、提供在衬底(12)上并电连接到功能器件(16)和导体元件(18)的布线层(14)以及中间电接触器件，其安装在布线层(14)上以在与布线层相对侧上提供用于接触导体元件(18)的接触区。根据本发明，导体元件(18)正在接触与如下区域相对的接触区中的中间电接触器件，该区域中电接触器件固定到布线层。本发明还涉及电路装置的对应制造方法。

Description

电路装置及其制造方法
技术领域
本发明涉及其中安装了功率功能器件、优选为功率半导体(诸如晶体管或二极管)以及导体元件的电路装置，该装置包括衬底、提供在衬底上并电连接到功率功能器件和导体元件的布线层以及中间电接触器件，中间电接触器件安装在布线层的相应部分上以提供用于接触功能器件和/或导体元件的对应接触区。
背景技术
文档EP 1 711 040 B1描绘了其中安装了功能器件和外部引出的导体的电路器件，该电路器件包括衬底、提供在衬底上并电连接到功能器件和外部引出的导体的布线层以及形成在一部分布线层上以提供用于接触功能器件的对应接触区的附加金属涂层。布线层和附加金属涂层构成衬底的金属化。可惜，在此文档中提出的低温接合需要镀银，这会妨碍将超声焊接用于端子。
由布线层和布线层的一部分上的金属涂层构成的金属化以比较高的电阻率贡献(大约30μΩ)贡献于总体装置电阻。一个可能的解决方案正在将一般较厚的衬底金属化用于减小电阻率。增大金属化厚度时的问题是布局容差同时增大。因此，布局将不得不随横截面积的损失再次改变。
一般较厚的衬底金属化的另一缺陷是，在布线层的金属化边缘处的机械应力将增大，其中特别是陶瓷衬底中会发起裂纹生长(聚酰亚胺可防止它)。
从EP 1 830 406 A1中已知一种功率模块。在该已知功率模块中，功率半导体被安装在散热器顶上。根据EP 1 830 406 A1的附图，散热器与它安装在其上的元件对准。
从DE 43 00 516 A1中已知另一种功率模块。在该已知功率模块中，接触板设置在二极管顶上以便易于连接到厚重的铜元件。
从T.Tsunoda等人的“Low-inductance module construction for highspeed，high-current IGBT module suitable for electric vehicie application”(Power Semiconductor devices and ICS，1993，ISPSD′93.，Proceedings of the5th International Symposium on Monterey，CA，USA 18-20 May 1993，NewYork，NY，USA IEEE，US，18May 1993)中已知多层DBC衬底。通过所提出的构造，彼此紧密地设置集电极端子和发射极端子，以便补偿由各个端子中的电流产生的磁场。
发明内容
本发明的目的是提供电路装置，其克服了上面提到的缺点。
通过在权利要求1中所定义的本发明实现这个目的。中间电接触器件仅固定到所述布线层的整个外侧(或界面)的有限子区域中的布线层的相应部分。根据权利要求1，中间接触器件具有第一侧，中间接触器件在其上固定到布线层。与其中中间接触器件固定到布线层的该部分布线层相对，中间接触器件具有接触区，在其中导体元件正在接触中间接触器件。通过该设置，布线层以及衬底能在附连导体元件期间受到保护免于损坏。
另外的优点是，当将中间接触器件固定在比中间接触器件薄的布线层的轨道(track)的顶上时，在布线层处的金属化边缘处的应力未增加许多，这是因为该固定的固定区域小于下面的金属化区域。在中间接触器件与金属化边缘之间存在余量。
根据本发明的优选实施例，通过钎焊和/或低温接合(LTB)将所述中间接触器件固定到所述布线层。
根据本发明的另一个优选实施例，导体元件是外部引出的导体。
根据本发明的又一个优选实施例，所述功率功能器件是功率晶体管，特别是绝缘栅双极晶体管，或(功率)二极管。绝缘栅双极晶体管或IGBT是三端子功率半导体器件，以高效率和快开关著称。在IGBT的活动状态下，IGBT的发射极以及对应的发射极轨道与栅极以及对应的栅极轨道之间的电压或电势差是低电压。而且，有选择地加厚发射极轨道对于可靠性不太关键，因为发射极轨道没有看到比集电极轨道高的温度。
根据本发明的一个优选实施例，至少部分导电的接触器件是金属箔或金属板。金属板可以是标准的绝缘金属技术(IMS)。板的接合在工艺步骤中可作为功率功能器件的接合(管芯接合)进行。金属箔或金属板优选为比100μm厚，更优选为比200μm厚。
根据本发明的另一个优选实施例，至少部分导电的接触器件是用于有选择地接触电路装置的其它元件和/或器件的电路板。
根据本发明的又一个优选实施例，所述中间接触器件和用于将所述功率功能器件与所述布线层电接触的至少一个接合元件一体式地形成。中间接触器件与接合元件一体式地形成节省了成本并简化了装置的安装。
本发明还涉及一种制造电路装置的方法，其中安装了至少一个功能器件和至少一个导体元件，其中所述装置包括衬底和提供在所述衬底上的布线层，所述方法包括如下步骤：
-在所述布线层上安装并电接触中间接触器件，以在所述中间接触器件的与所述布线层(14)相对的一侧上提供接触区；以及
-将所述导体元件直接电连接到所述接触区中的所述中间接触器件。
根据本发明的优选实施例，通过钎焊和/或低温接合(LTB)将所述中间接触器件固定到所述布线层。
根据本发明的另一个优选实施例，布线器件是装置的外部引出的导体或端子。
根据本发明的又一个优选实施例，所述功率功能器件是功率晶体管，特别是绝缘栅双极晶体管，或二极管。
根据本发明的一个优选实施例，至少部分导电的接触器件是金属箔或金属板。金属板可以是标准的IMS技术。板的接合在工艺步骤中可作为功率功能器件的接合(管芯接合)来进行。金属箔或金属板优选为比100μm厚，更优选为比200μm厚。
根据本发明的另一个优选实施例，至少部分导电的接触器件是电路板。
根据本发明的又一个优选实施例，所述中间接触器件和用于将所述功率功能器件与所述布线层电接触的至少一个接合元件一体式地形成。中间接触器件与接合元件一体式地形成节省了成本并简化了装置的安装。
附图说明
本发明的这些和其它方面根据后面描述的实施例将显而易见，并参考这些实施例阐明。
在附图中：
图1描绘了根据本发明第一实施例的电路装置；
图2以截面图示出了图1的电路装置；
图3以截面图示出了根据本发明第二实施例的电路装置；
图4以截面图示出了根据本发明第三实施例的电路装置；以及
图5描绘了根据本发明第四实施例的电路装置。
具体实施方式
图1和2示出了功率电路装置10，功率电路装置10包括是陶瓷衬底的衬底12和提供在衬底12上的结构化布线层14。布线层14至少具有第一轨道和第二轨道，第二轨道与第一轨道绝缘。在当前实施例中，第一轨道由集电极轨道36形成，并且第二轨道由发射极轨道30形成。在其它实施例中，布线层可具有多于2个的轨道。在当前实施例中，布线层14具有作为栅极轨道的第三轨道。特别是，结构化布线层14优选由铜制成。优选地，布线层14具有200μm到400μm的厚度。在本实施例的电路装置10中，6个功率功能器件16(未详细示出)和多个导体元件18安装在功率电路装置10上。功率功能器件16是功率半导体器件，诸如功率晶体管20，特别是功率IGBT(IGBT：绝缘栅双极晶体管)，以及二极管。导体元件18优选是外部引出的导体22，用于在外部将功率功能器件16连接在电路装置10和/或接合元件、特别是接合线25的外侧。外部引出的导体22优选是电路装置的L形功率端子。这些功率端子例如由所谓的“钼板”、即由二硫化钼和石墨优选与合成非熔化载体构成的无金属化合物制成。
如图1所示，功率电路装置10具有4个外部引出的导体22。在每一个外部引出的导体22与正好在外部引出的导体22下面的布线层14的相应区域之间，设置中间接触器件26。中间接触器件26具有第一侧和第二侧，第二侧至少近似平行于第一侧。中间接触器件26的第一侧导电地固定到布线层14。在第二侧上，中间接触器件26提供用于接触至少一个导体元件18、例如外部引出的导体22的接触区。导体元件18导电地固定在中间接触器件26上。另外，接触区与第一侧上中间接触器件在其中导电地固定到布线层14的区域相对。
导体元件18、例如外部引出的导体(端子)22与布线层14之间的中间接触器件26当通过超声焊接(还有激光和电阻焊接)接合外部引出的导体22时保护陶瓷衬底12。为了那个目的，中间接触器件26还必须接合在作为正好在外部引出的导体22的足部(端子足部)下面的集电极轨道36、发射极轨道30和/或栅极轨道28′的结构化布线层14的各部分的顶上。应该理解，仅当将导体元件18直接连接到布线层14可能损坏陶瓷衬底12和/或布线层14时才需要中间接触器件26。由此，在图中未示出的其它优选实施例中，仅一个或多个导体元件18，尤其是一个或多个外部引出的导体22，通过中间接触器件26连接到布线层的相应轨道。
优选地，中间接触器件是金属箔或金属板。因此，中间接触器件26是独立的(self-contained)。金属箔或金属板的接合在工艺步骤中可作为功率功能器件的接合(管芯接合)进行。金属箔或金属板优选为比100μm厚，更优选地比200μm厚。
一般而言，功率功能器件16经由它们的连接器区域(未示出)电连接到外部引出的导体22，接合元件是接合线25和中间接触器件26以及通过布线层14和中间接触器件26建立的轨道36。
在图1和2所示的实施例中，每一个功率功能器件16的上接触部或发射极接触部通过接合线25电接触，接合线25引向设置在布线层14的发射极轨道30上的金属箔34。根据本发明，金属箔34是中间接触器件26的可能实施例。每一个功率功能器件16的下接触部或集电极接触部是处于与布线层14的集电极轨道36之一的电接触的。另外，在每个集电极轨道36上设置金属板38，金属板38是中间接触器件26的另外实施例。如上所述，集电极轨道36上的金属板38用于保护陶瓷衬底12。发射极轨道30上的金属箔34不仅用于保护陶瓷衬底12而且用于降低电阻率，如下面所讨论的。
中间接触器件26优选设置成直接电接触导体元件18(特别是外部引出的导体22)和/或布线层，其优选由至少第一轨道和第二轨道(尤其是IGBT晶体管20的集电极轨道36和发射极轨道30)形成。
附加电阻膜32位于由附加布线条形成的栅极轨道28与由结构化布线层14的相应部分形成的发射极轨道30之间，并且中间接触器件26是金属箔34。金属箔34导电地固定在结构化布线层14的相应部分上。优选地，栅极轨道28和其上提供了栅极轨道28的中间接触器件由部分导电金属箔或金属板通过绝缘金属技术(IMS)形成。
图1-5中所示的两个集电极轨道中的每个通过它们的集电极连接器区域直接接触三个IGBT和/或二极管。
根据本发明，中间电接触器件26安装在布线层14的相应部分上以提供用于接触功率功能器件16的对应接触区。另外，中间电接触器件26安装在形成发射极轨道30的布线层14的一部分上。
如图2中更详细示出的，在电路装置10中，优选地，金属板或厚金属箔34接合在构建发射极轨道30的布线层14的那部分上。板或箔34提供在是IGBT的栅极轨道28的附加金属化或布线条的顶上。板或箔可以是标准的IMS技术(“DENKA HITT PLATE”)。板或箔34的接合在工艺步骤中可作为功率功能器件16的接合(是管芯接合)进行。接合方法优选为钎焊或低温接合(LTB)。由此，布线层14与中间接触器件26之间的接头是钎焊接头或通过低温接合制成的接头。布线层14的该部分的顶上的板降低了总体发射极路径的电阻。对于标准IGBT模块(例如“HiPak2”)，该降低可大于10μΩ。对于1700V/3600A装置或模块，这将电压降降低了大于36mV(通态电压的大约1.5％)。
发射极轨道30的所获得厚度允许使发射极轨道30更窄。更窄的发射极轨道30允许减小衬底12的总体区域，或形成集电极轨道36的更大区域。图3中示出了对应的装置。
图3实质上根据图2，其中发射极轨道30的宽度比在图2中示出的电路装置10的实施例中更窄。集电极轨道36的较大面积增大了热扩散。在衬底12的表面与发热功率功能器件16之间具有较大距离还将改进外壳温度循环能力，因为在衬底焊料的表面处存在较小的温度差ΔT，并且由此存在较小的应力。
因为发射轨道30越窄，对于同一尺寸的衬底12可使用的集电极轨道36越大。图4示出了具有较大集电极轨道的相应电路装置。集电极轨道的有源区域可增加大于10％。
图5实质上根据图1至4，其中将发射极轨道30电连接到功率功能器件16的对应发射极连接器区域的多个接合金属片38和将发射极轨道30与是外部引出的导体22的对应(发射极)导体元件18连接的中间接触器件26一体式地形成为固定到功率功能器件16的发射极连接器区域和对应(发射极)导体元件18的中间接触器件26。图5示出的这个中间接触器件26直接接触功率功能器件16的发射极和/或对应的导体元件18。
在管芯附连工艺中，可接合中间接触器件26，特别是金属板38，其提供了多种功能：
-降低电阻，
-当焊接功率端子(例如强钼板(strong moly plate))时保护陶瓷，
-在顶上承载栅极电路。
对应的制造方法包括如下步骤：
-将中间电接触器件、例如金属箔34或板38仅固定在布线层的整个外侧的有限子区域中的布线层14的相应部分上以提供用于导体元件18的对应接触区；以及
-将功能器件和导体22直接或间接电连接到金属箔34或板38。
集电极轨道的对应电阻从8.2μΩ降到6.8μΩ，发射极轨道的电阻从24.2μΩ降到6.8μΩ，总共下降大约为18.8μΩ。
在图中未示出的另外实施例中，仅图1至5中示出的一个或多个中间接触器件设置在布线层14上。还有可能的是，至少一个导体元件18直接连接到布线层14。
虽然已经在附图和以上描述中例证和描述了本发明，但此类例证和描述要视为例证性的或示范性的而非限制性的；本发明不限于所公开的实施例。
本领域技术人员在根据对附图、公开内容和所附权利要求书的研究实施所要求保护的发明时可理解并实现要公开实施例的其它变型。在权利要求书中，词语“包括”不排除其它元件或步骤，并且不定冠词“一个”不排除多个。在相互不同的从属权利要求中阐述的某些量度的纯粹事实不指示不能有效地使用这些量度的组合。权利要求书中的任何附图标记都不应视为限制范围。
附图标记列表
10 电路装置
12 衬底
14 布线层
16 功能器件
18 导体元件
20 功率晶体管
22 外部引出的导体
24 接合线
25 接合金属片
26 中间接触器件
28 栅极轨道
30 发射极轨道
32 电阻膜
34 金属箔
36 集电极轨道
38 金属板

Claims (25)

1.一种电路装置(10)，包括：
-衬底(12)；
-布线层(14)，提供在所述衬底(12)上并电连接到功率功能器件(16)和外部引出的导体(22)；其特征在于，
-中间接触器件，其安装在所述布线层(14)上以在与所述布线层相对侧上提供用于接触所述外部引出的导体(22)的接触区；其中所述中间接触器件(26)至少具有第一侧和第二侧，所述第二侧至少近似平行于所述第一侧，其中所述中间接触器件(26)在所述第一侧上固定到所述布线层(14)，以及所述外部引出的导体(22)正在所述接触区中在所述第二侧上接触所述中间接触器件(26)，所述接触区与其中所述中间接触器件(26)导电地固定到所述布线层(14)的所述第一侧上的区域相对。
2.如权利要求1所述的电路装置，其中由钎焊接头和/或由通过低温接合制成的接头将所述中间接触器件(26)固定到所述布线层。
3.如权利要求1或2所述的电路装置，其中所述中间接触器件(26)固定到所述布线层的整个外侧的有限子区域中所述布线层(14)的相应部分。
4.如权利要求1或2所述的电路装置，其中接合元件从所述中间接触器件向所述功率功能器件(16)引出。
5.如权利要求1或2所述的电路装置，其中所述功率功能器件(16)是功率半导体器件。
6.如权利要求1或2所述的电路装置，其中所述功率功能器件(16)是功率晶体管(20)。
7.如权利要求1或2所述的电路装置，其中所述功率功能器件(16)是绝缘栅双极晶体管。
8.如权利要求1或2所述的电路装置，其中所述功率功能器件(16)是二极管。
9.如权利要求1或2所述的电路装置，其中所述中间接触器件是至少部分导电的，并且其中所述中间接触器件(26)为金属箔、金属片或金属板。
10.如权利要求1或2所述的电路装置，其中所述至少部分导电的中间接触器件(26)是电路板。
11.如权利要求1或2所述的电路装置，其中所述中间接触器件比100μm厚。
12.如权利要求1或2所述的电路装置，其中所述中间接触器件比220μm厚。
13.如权利要求1或2所述的电路装置，其中所述中间接触器件(26)和用于将所述功率功能器件(16)与所述布线层(14)电接触的接合元件一体式地形成。
14.如权利要求1或2所述的电路装置，其中所述中间接触器件(26)完全直接与所述布线层(14)电接触且机械接触。
15.如权利要求1或2所述的电路装置，其中所述中间接触器件(26)是独立的。
16.一种制造电路装置的方法，所述电路装置是如权利要求1或2所述的电路装置，其中安装至少一个功率功能器件(16)和至少一个外部引出的导体(22)，其中所述装置包括衬底(12)和提供在所述衬底上的布线层(14)，所述方法包括如下步骤：
-在所述布线层上安装并电接触中间接触器件(26)，以在所述中间接触器件的与所述布线层(14)相对的一侧上提供接触区；以及
-在所述接触区中将所述外部引出的导体(22)直接电连接到所述中间接触器件。
17.如权利要求16所述的方法，其中将所述中间接触元件安装到所述布线层的一部分是将所述中间接触元件仅固定到所述布线层的整个外侧的有限子区域中的该部分。
18.如权利要求16所述的方法，其中通过钎焊和/或低温接合将所述中间接触器件(26)固定到所述布线层。
19.如权利要求16所述的方法，其中所述功率功能器件是功率半导体。
20.如权利要求16所述的方法，其中所述功率功能器件是功率晶体管。
21.如权利要求16所述的方法，其中所述功率功能器件是绝缘栅双极晶体管。
22.如权利要求16所述的方法，其中所述功率功能器件是二极管。
23.如权利要求16所述的方法，其中所述中间接触器件是至少部分导电的，并且其中所述中间接触器件(26)为金属箔、金属片或金属板。
24.如权利要求16所述的方法，其中所述中间接触器件是至少部分导电的，并且其中所述中间接触器件(26)是电路板。
25.如权利要求16所述的方法，其中所述中间接触器件和用于将所述功率功能器件与所述布线层电接触的接合元件一体式地形成。
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