JP6159034B2 - インク組成物およびそれを用いて製造した光電変換素子 - Google Patents

インク組成物およびそれを用いて製造した光電変換素子 Download PDF

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JP6159034B2
JP6159034B2 JP2016559014A JP2016559014A JP6159034B2 JP 6159034 B2 JP6159034 B2 JP 6159034B2 JP 2016559014 A JP2016559014 A JP 2016559014A JP 2016559014 A JP2016559014 A JP 2016559014A JP 6159034 B2 JP6159034 B2 JP 6159034B2
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JPWO2016076213A1 (ja
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暁暁 申
暁暁 申
智也 中谷
智也 中谷
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Sumitomo Chemical Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C09D11/02—Printing inks
    • C09D11/03—Printing inks characterised by features other than the chemical nature of the binder
    • C09D11/033—Printing inks characterised by features other than the chemical nature of the binder characterised by the solvent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C09D11/02—Printing inks
    • C09D11/10—Printing inks based on artificial resins
    • C09D11/106—Printing inks based on artificial resins containing macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C09D11/52—Electrically conductive inks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/115—Polyfluorene; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/151—Copolymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/211—Fullerenes, e.g. C60
    • H10K85/215—Fullerenes, e.g. C60 comprising substituents, e.g. PCBM
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/40—Organosilicon compounds, e.g. TIPS pentacene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Inks, Pencil-Leads, Or Crayons (AREA)
  • Photovoltaic Devices (AREA)
  • Electroluminescent Light Sources (AREA)
  • Light Receiving Elements (AREA)
JP2016559014A 2014-11-13 2015-11-06 インク組成物およびそれを用いて製造した光電変換素子 Active JP6159034B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014230429 2014-11-13
JP2014230429 2014-11-13
PCT/JP2015/081270 WO2016076213A1 (ja) 2014-11-13 2015-11-06 インク組成物およびそれを用いて製造した光電変換素子

Related Child Applications (1)

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JP2017113030A Division JP6718412B2 (ja) 2014-11-13 2017-06-07 インク組成物およびそれを用いて製造した光電変換素子

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JPWO2016076213A1 JPWO2016076213A1 (ja) 2017-06-29
JP6159034B2 true JP6159034B2 (ja) 2017-07-05

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Country Link
US (1) US20170237012A1 (OSRAM)
EP (2) EP3496174B1 (OSRAM)
JP (2) JP6159034B2 (OSRAM)
KR (2) KR101815432B1 (OSRAM)
CN (1) CN107109090B (OSRAM)
WO (1) WO2016076213A1 (OSRAM)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017102049A1 (en) * 2015-12-16 2017-06-22 Merck Patent Gmbh Formulations containing a mixture of at least two different solvents
GB2551585A (en) * 2016-06-24 2017-12-27 Sumitomo Chemical Co Solvent blends for improved jetting and ink stability for inkjet printing of photoactive layers
GB2554404A (en) * 2016-09-26 2018-04-04 Sumitomo Chemical Co Solvent systems for preparation of photosensitive organic electronic devices
KR101930284B1 (ko) * 2016-11-01 2018-12-19 엘에스니꼬동제련 주식회사 태양전지 전극용 도전성 페이스트 및 이를 사용하여 제조된 태양전지
WO2018095381A1 (zh) * 2016-11-23 2018-05-31 广州华睿光电材料有限公司 印刷油墨组合物及其制备方法和用途
GB2560934A (en) * 2017-03-28 2018-10-03 Sumitomo Chemical Co Solvent systems for the preparation of photosensitive organic electronic devices
CN111263982A (zh) * 2017-10-23 2020-06-09 住友化学株式会社 油墨、油墨的固化膜以及光电转换元件
JP6411686B1 (ja) * 2018-02-09 2018-10-24 住友化学株式会社 高分子化合物の製造方法
JP7404257B2 (ja) 2018-09-19 2023-12-25 株式会社ダイセル 有機半導体デバイス製造用インク組成物
JP7145058B2 (ja) * 2018-12-07 2022-09-30 花王株式会社 塗膜の形成方法
US12245492B2 (en) * 2019-03-28 2025-03-04 Raynergy Tek Incorporation Organic semiconductor formulation
FR3097686B1 (fr) * 2019-06-24 2022-10-28 Isorg Formulation comprenant un matériau semiconducteur organique de type p et un matériau semiconducteur de type n
JP2021136402A (ja) * 2020-02-28 2021-09-13 三菱ケミカル株式会社 光電変換層作成用インク、光電変換素子の製造方法、光電変換素子、及び光センサー
JP7284128B2 (ja) * 2020-07-17 2023-05-30 住友化学株式会社 光電変換素子及びその製造方法
JP6932279B1 (ja) * 2021-03-24 2021-09-08 住友化学株式会社 インク組成物の製造方法
TWI849311B (zh) * 2021-04-29 2024-07-21 天光材料科技股份有限公司 有機半導體裝置
JP2023107154A (ja) * 2022-01-21 2023-08-02 住友化学株式会社 インク組成物及び当該インク組成物を用いた光電変換素子
JP7250982B1 (ja) * 2022-06-08 2023-04-03 住友化学株式会社 光検出素子の活性層形成用インク組成物、膜、及び光検出素子

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE50207293D1 (de) * 2001-03-10 2006-08-03 Merck Patent Gmbh Lösung und dispersionen organischer halbleiter
CN100516108C (zh) * 2004-02-26 2009-07-22 住友化学株式会社 高分子化合物以及使用该高分子化合物的高分子发光元件
US7329709B2 (en) * 2004-06-02 2008-02-12 Konarka Technologies, Inc. Photoactive materials and related compounds, devices, and methods
JP5054305B2 (ja) * 2005-12-22 2012-10-24 パナソニック株式会社 有機太陽電池の製造方法
JP2008053252A (ja) * 2006-08-22 2008-03-06 Matsushita Electric Ind Co Ltd 有機光電変換素子アレイおよびこれを用いたイメージセンサ
JP2010528119A (ja) * 2007-05-02 2010-08-19 プレックストロニクス インコーポレーティッド 共役ポリマーのための溶媒システム
EP2222893B1 (en) 2007-10-19 2017-01-04 Biointraface, Inc. Coating method
CN101945922A (zh) 2008-02-18 2011-01-12 住友化学株式会社 组合物及使用其的有机光电转换元件
EP2259356A4 (en) * 2008-03-25 2012-05-02 Sumitomo Chemical Co COMPOSITION AND MADE THEREFORE PHOTOELECTRIC CONVERSION ELEMENT
JP2012500500A (ja) * 2008-08-20 2012-01-05 プレックストロニクス インコーポレーティッド 有機太陽電池の製造のための改善された溶媒システム
EP2463929A4 (en) * 2009-08-04 2013-10-02 Mitsubishi Chem Corp PHOTOELECTRIC CONVERTER ELEMENT AND SOLAR CELL THEREWITH
CN105198909B (zh) 2009-10-29 2017-09-08 住友化学株式会社 用于形成高分子化合物的化合物
CN107573484A (zh) * 2009-12-23 2018-01-12 默克专利有限公司 包括聚合粘结剂的组合物
KR20120123361A (ko) * 2009-12-23 2012-11-08 메르크 파텐트 게엠베하 유기 반도성 화합물을 포함하는 조성물
EP2559078A1 (en) * 2010-04-12 2013-02-20 Merck Patent GmbH Composition having improved performance
KR101896723B1 (ko) * 2010-04-12 2018-09-07 메르크 파텐트 게엠베하 유기 전자 소자 제조용 조성물 및 방법
EP2559729A4 (en) * 2010-04-16 2015-03-25 Asahi Glass Co Ltd FLUOR-COOLED COPOLYMER COMPOSITION AND METHOD OF MANUFACTURING THEREOF
RU2012156386A (ru) 2010-05-27 2014-07-10 Мерк Патент Гмбх Состав и способ получения органических электронных устройств
US20140147996A1 (en) * 2010-11-29 2014-05-29 Arizon Board of Regents Acting for and on Behalf Arizona State University Methods for fabricating bulk heterojunctions using solution processing techniques
WO2012111784A1 (ja) * 2011-02-14 2012-08-23 住友化学株式会社 有機光電変換素子の製造方法
TW201307427A (zh) * 2011-02-14 2013-02-16 Sumitomo Chemical Co 有機光電變換元件的製造方法
WO2012147564A1 (ja) * 2011-04-25 2012-11-01 住友化学株式会社 高分子化合物及びそれを用いた電子素子
US9871216B2 (en) * 2011-08-09 2018-01-16 Konica Minolta, Inc. Organic photoelectric conversion element and organic solar cell using the same
JP6265897B2 (ja) * 2011-08-26 2018-01-24 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ Ｇｅｓｅｌｌｓｃｈａｆｔ ｍｉｔ ｂｅｓｃｈｒａｅｎｋｔｅｒ Ｈａｆｔｕｎｇ 有機半導体配合物
US20140239284A1 (en) 2011-10-07 2014-08-28 Sumitomo Chemical Company, Limited Polymer compound and electronic device
US8598299B2 (en) * 2011-12-06 2013-12-03 Xerox Corporation Semiconductor composition
JP5915969B2 (ja) * 2012-03-09 2016-05-11 三菱化学株式会社 光電変換素子及び太陽電池モジュール
JP6018488B2 (ja) 2012-07-12 2016-11-02 大日本除蟲菊株式会社 薬剤揮散体、及びこれを用いた飛翔害虫の防虫方法
SG11201504345QA (en) * 2012-12-28 2015-07-30 Agency Science Tech & Res P-type semiconducting polymers and related methods
JP2014189666A (ja) * 2013-03-27 2014-10-06 Mitsubishi Chemicals Corp 半導体層形成用組成物及びそれを用いた太陽電池素子
US20160181552A1 (en) * 2013-08-07 2016-06-23 Merck Patent Gmbh Formulation for the preparation of organic electronic (oe) devices comprising a polymeric binder
FR3022692B1 (fr) * 2014-06-24 2016-07-15 Armor Procede de realisation d'un film organique semi-conducteur

Also Published As

Publication number Publication date
EP3496174B1 (en) 2024-06-12
CN107109090A (zh) 2017-08-29
EP3219765A4 (en) 2017-11-08
KR20170070252A (ko) 2017-06-21
JP6718412B2 (ja) 2020-07-08
EP3496174A1 (en) 2019-06-12
KR20180004301A (ko) 2018-01-10
JP2017197765A (ja) 2017-11-02
US20170237012A1 (en) 2017-08-17
JPWO2016076213A1 (ja) 2017-06-29
EP3219765A1 (en) 2017-09-20
EP3219765B1 (en) 2019-01-30
CN107109090B (zh) 2021-10-08
KR101815432B1 (ko) 2018-01-04
WO2016076213A1 (ja) 2016-05-19
KR102341244B1 (ko) 2021-12-20

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