JP6110581B2 - 高周波信号伝送回路形成用表面処理銅箔、銅張積層板及びプリント配線板 - Google Patents
高周波信号伝送回路形成用表面処理銅箔、銅張積層板及びプリント配線板 Download PDFInfo
- Publication number
- JP6110581B2 JP6110581B2 JP2016562598A JP2016562598A JP6110581B2 JP 6110581 B2 JP6110581 B2 JP 6110581B2 JP 2016562598 A JP2016562598 A JP 2016562598A JP 2016562598 A JP2016562598 A JP 2016562598A JP 6110581 B2 JP6110581 B2 JP 6110581B2
- Authority
- JP
- Japan
- Prior art keywords
- copper
- copper foil
- frequency signal
- signal transmission
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims description 233
- 239000011889 copper foil Substances 0.000 title claims description 156
- 230000008054 signal transmission Effects 0.000 title claims description 77
- 230000015572 biosynthetic process Effects 0.000 title description 6
- 239000010949 copper Substances 0.000 claims description 115
- 229910052802 copper Inorganic materials 0.000 claims description 77
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 50
- 238000011282 treatment Methods 0.000 claims description 45
- 239000005751 Copper oxide Substances 0.000 claims description 44
- 229910000431 copper oxide Inorganic materials 0.000 claims description 44
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 claims description 41
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 claims description 41
- 229940112669 cuprous oxide Drugs 0.000 claims description 40
- 239000013078 crystal Substances 0.000 claims description 39
- 238000007788 roughening Methods 0.000 claims description 38
- 239000002131 composite material Substances 0.000 claims description 27
- 150000001875 compounds Chemical class 0.000 claims description 27
- 238000004458 analytical method Methods 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 84
- 229960004643 cupric oxide Drugs 0.000 description 42
- 238000000034 method Methods 0.000 description 38
- 230000005540 biological transmission Effects 0.000 description 25
- 239000011347 resin Substances 0.000 description 23
- 229920005989 resin Polymers 0.000 description 23
- 239000006087 Silane Coupling Agent Substances 0.000 description 19
- 239000000463 material Substances 0.000 description 19
- 239000002585 base Substances 0.000 description 18
- 239000000758 substrate Substances 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 14
- 239000000243 solution Substances 0.000 description 14
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 12
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 12
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 11
- 230000002500 effect on skin Effects 0.000 description 10
- 230000003647 oxidation Effects 0.000 description 10
- 238000007254 oxidation reaction Methods 0.000 description 10
- 239000005749 Copper compound Substances 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 9
- 238000005530 etching Methods 0.000 description 9
- 150000001880 copper compounds Chemical class 0.000 description 8
- 238000005259 measurement Methods 0.000 description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 7
- 239000012670 alkaline solution Substances 0.000 description 7
- 229910000077 silane Inorganic materials 0.000 description 7
- 230000003746 surface roughness Effects 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 239000000470 constituent Substances 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 238000012545 processing Methods 0.000 description 5
- 238000004381 surface treatment Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000000615 nonconductor Substances 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 2
- -1 3-aminopropoxy Chemical group 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005868 electrolysis reaction Methods 0.000 description 2
- 239000008151 electrolyte solution Substances 0.000 description 2
- 238000001887 electron backscatter diffraction Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- PHQOGHDTIVQXHL-UHFFFAOYSA-N n'-(3-trimethoxysilylpropyl)ethane-1,2-diamine Chemical compound CO[Si](OC)(OC)CCCNCCN PHQOGHDTIVQXHL-UHFFFAOYSA-N 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 2
- 238000004451 qualitative analysis Methods 0.000 description 2
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- ZDDUSDYMEXVQNJ-UHFFFAOYSA-N 1H-imidazole silane Chemical compound [SiH4].N1C=NC=C1 ZDDUSDYMEXVQNJ-UHFFFAOYSA-N 0.000 description 1
- 125000000022 2-aminoethyl group Chemical group [H]C([*])([H])C([H])([H])N([H])[H] 0.000 description 1
- KFSRINVVFGTVOA-UHFFFAOYSA-N 3-[butoxy(dimethoxy)silyl]propan-1-amine Chemical compound CCCCO[Si](OC)(OC)CCCN KFSRINVVFGTVOA-UHFFFAOYSA-N 0.000 description 1
- SBHBXEGSFJXBTA-UHFFFAOYSA-N 3-methoxysilylpropyl prop-2-enoate Chemical compound CO[SiH2]CCCOC(=O)C=C SBHBXEGSFJXBTA-UHFFFAOYSA-N 0.000 description 1
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 description 1
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 1
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 1
- PRKPGWQEKNEVEU-UHFFFAOYSA-N 4-methyl-n-(3-triethoxysilylpropyl)pentan-2-imine Chemical compound CCO[Si](OCC)(OCC)CCCN=C(C)CC(C)C PRKPGWQEKNEVEU-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 108010010803 Gelatin Proteins 0.000 description 1
- 229910021607 Silver chloride Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- DUYKOAQJUCADEC-UHFFFAOYSA-N [SiH4].N1=NN=CC=C1 Chemical compound [SiH4].N1=NN=CC=C1 DUYKOAQJUCADEC-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- RJTANRZEWTUVMA-UHFFFAOYSA-N boron;n-methylmethanamine Chemical compound [B].CNC RJTANRZEWTUVMA-UHFFFAOYSA-N 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- QBWCMBCROVPCKQ-UHFFFAOYSA-N chlorous acid Chemical compound OCl=O QBWCMBCROVPCKQ-UHFFFAOYSA-N 0.000 description 1
- 229940077239 chlorous acid Drugs 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- UGWKCNDTYUOTQZ-UHFFFAOYSA-N copper;sulfuric acid Chemical compound [Cu].OS(O)(=O)=O UGWKCNDTYUOTQZ-UHFFFAOYSA-N 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 229920000159 gelatin Polymers 0.000 description 1
- 239000008273 gelatin Substances 0.000 description 1
- 235000019322 gelatine Nutrition 0.000 description 1
- 235000011852 gelatine desserts Nutrition 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- MQWFLKHKWJMCEN-UHFFFAOYSA-N n'-[3-[dimethoxy(methyl)silyl]propyl]ethane-1,2-diamine Chemical compound CO[Si](C)(OC)CCCNCCN MQWFLKHKWJMCEN-UHFFFAOYSA-N 0.000 description 1
- KBJFYLLAMSZSOG-UHFFFAOYSA-N n-(3-trimethoxysilylpropyl)aniline Chemical compound CO[Si](OC)(OC)CCCNC1=CC=CC=C1 KBJFYLLAMSZSOG-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- PXQLVRUNWNTZOS-UHFFFAOYSA-N sulfanyl Chemical class [SH] PXQLVRUNWNTZOS-UHFFFAOYSA-N 0.000 description 1
- 239000002335 surface treatment layer Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000011573 trace mineral Substances 0.000 description 1
- 235000013619 trace mineral Nutrition 0.000 description 1
- VMYXFDVIMUEKNP-UHFFFAOYSA-N trimethoxy-[5-(oxiran-2-yl)pentyl]silane Chemical compound CO[Si](OC)(OC)CCCCCC1CO1 VMYXFDVIMUEKNP-UHFFFAOYSA-N 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/382—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/02—Single bars, rods, wires, or strips
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/022—Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Laminated Bodies (AREA)
- Chemical Treatment Of Metals (AREA)
- Non-Insulated Conductors (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014247460 | 2014-12-05 | ||
JP2014247460 | 2014-12-05 | ||
PCT/JP2015/084186 WO2016088884A1 (ja) | 2014-12-05 | 2015-12-04 | 高周波信号伝送回路形成用表面処理銅箔、銅張積層板及びプリント配線板 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP6110581B2 true JP6110581B2 (ja) | 2017-04-05 |
JPWO2016088884A1 JPWO2016088884A1 (ja) | 2017-04-27 |
Family
ID=56091819
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016562598A Active JP6110581B2 (ja) | 2014-12-05 | 2015-12-04 | 高周波信号伝送回路形成用表面処理銅箔、銅張積層板及びプリント配線板 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP6110581B2 (ko) |
KR (1) | KR101931895B1 (ko) |
CN (1) | CN107109663B (ko) |
TW (1) | TWI611738B (ko) |
WO (1) | WO2016088884A1 (ko) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019187558A1 (ja) * | 2018-03-30 | 2019-10-03 | 住友大阪セメント株式会社 | 光導波路素子 |
US11770904B2 (en) | 2019-02-04 | 2023-09-26 | Panasonic Intellectual Property Management Co., Ltd. | Surface-treated copper foil, and copper-clad laminate plate, resin-attached copper foil and circuit board each using same |
US11866536B2 (en) | 2019-02-04 | 2024-01-09 | Panasonic Intellectual Property Management Co., Ltd. | Copper-clad laminate plate, resin-attached copper foil, and circuit board using same |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6832581B2 (ja) * | 2016-07-15 | 2021-02-24 | ナミックス株式会社 | プリント配線板に用いる銅箔の製造方法 |
JP7013003B2 (ja) * | 2017-11-10 | 2022-01-31 | ナミックス株式会社 | 粗面化処理された銅表面を有する物体 |
JP7456578B2 (ja) * | 2019-05-09 | 2024-03-27 | ナミックス株式会社 | 銅表面の加工装置 |
CN110029336B (zh) * | 2019-05-24 | 2021-05-14 | 电子科技大学 | 一种多层印制电路板制造用铜表面处理液及处理方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4916154B2 (ja) * | 2005-10-12 | 2012-04-11 | Jx日鉱日石金属株式会社 | 回路用銅又は銅合金箔 |
KR20130027484A (ko) * | 2010-03-01 | 2013-03-15 | 후루카와 덴키 고교 가부시키가이샤 | 동박의 표면처리방법, 표면처리된 동박, 및 리튬 이온 2차 전지의 음극 컬렉터용 동박 |
JP5901066B2 (ja) * | 2012-04-27 | 2016-04-06 | 三井金属鉱業株式会社 | 樹脂組成物、樹脂層付金属箔、金属張積層板及びプリント配線板 |
CN105102678B (zh) * | 2013-02-14 | 2018-06-12 | 三井金属矿业株式会社 | 表面处理铜箔及用表面处理铜箔得到的覆铜层压板 |
WO2015040998A1 (ja) * | 2013-09-20 | 2015-03-26 | 三井金属鉱業株式会社 | 銅箔、キャリア箔付銅箔及び銅張積層板 |
KR101734795B1 (ko) * | 2014-01-27 | 2017-05-11 | 미쓰이금속광업주식회사 | 조화 처리 구리박, 동장 적층판 및 프린트 배선판 |
-
2015
- 2015-12-04 KR KR1020177014837A patent/KR101931895B1/ko active IP Right Grant
- 2015-12-04 JP JP2016562598A patent/JP6110581B2/ja active Active
- 2015-12-04 CN CN201580065711.XA patent/CN107109663B/zh active Active
- 2015-12-04 WO PCT/JP2015/084186 patent/WO2016088884A1/ja active Application Filing
- 2015-12-07 TW TW104140916A patent/TWI611738B/zh active
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019187558A1 (ja) * | 2018-03-30 | 2019-10-03 | 住友大阪セメント株式会社 | 光導波路素子 |
JP2019179122A (ja) * | 2018-03-30 | 2019-10-17 | 住友大阪セメント株式会社 | 光導波路素子 |
US11327347B2 (en) | 2018-03-30 | 2022-05-10 | Sumitomo Osaka Cement Co., Ltd. | Optical waveguide element |
JP7135384B2 (ja) | 2018-03-30 | 2022-09-13 | 住友大阪セメント株式会社 | 光導波路素子 |
US11770904B2 (en) | 2019-02-04 | 2023-09-26 | Panasonic Intellectual Property Management Co., Ltd. | Surface-treated copper foil, and copper-clad laminate plate, resin-attached copper foil and circuit board each using same |
US11866536B2 (en) | 2019-02-04 | 2024-01-09 | Panasonic Intellectual Property Management Co., Ltd. | Copper-clad laminate plate, resin-attached copper foil, and circuit board using same |
Also Published As
Publication number | Publication date |
---|---|
TW201640964A (zh) | 2016-11-16 |
JPWO2016088884A1 (ja) | 2017-04-27 |
WO2016088884A1 (ja) | 2016-06-09 |
CN107109663B (zh) | 2020-03-10 |
KR101931895B1 (ko) | 2018-12-21 |
CN107109663A (zh) | 2017-08-29 |
TWI611738B (zh) | 2018-01-11 |
KR20170078798A (ko) | 2017-07-07 |
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