JP6088493B2 - プラズマエッチングリアクタのセラミックシャワーヘッドのためのガス分配システム - Google Patents

プラズマエッチングリアクタのセラミックシャワーヘッドのためのガス分配システム Download PDF

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JP6088493B2
JP6088493B2 JP2014513540A JP2014513540A JP6088493B2 JP 6088493 B2 JP6088493 B2 JP 6088493B2 JP 2014513540 A JP2014513540 A JP 2014513540A JP 2014513540 A JP2014513540 A JP 2014513540A JP 6088493 B2 JP6088493 B2 JP 6088493B2
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gas
ring
supply system
gas supply
flow paths
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JP2014515561A (ja
JP2014515561A5 (enExample
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カン・マイケル
パターソン・アレックス
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Lam Research Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F35/00—Accessories for mixers; Auxiliary operations or auxiliary devices; Parts or details of general application
    • B01F35/71—Feed mechanisms
    • B01F35/717—Feed mechanisms characterised by the means for feeding the components to the mixer
    • B01F35/7182—Feed mechanisms characterised by the means for feeding the components to the mixer with means for feeding the material with a fractal or tree-type distribution in a surface
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4558—Perforated rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/0318—Processes
    • Y10T137/0402—Cleaning, repairing, or assembling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/85938—Non-valved flow dividers

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
JP2014513540A 2011-05-31 2012-05-16 プラズマエッチングリアクタのセラミックシャワーヘッドのためのガス分配システム Active JP6088493B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/118,933 2011-05-31
US13/118,933 US9245717B2 (en) 2011-05-31 2011-05-31 Gas distribution system for ceramic showerhead of plasma etch reactor
PCT/US2012/038085 WO2012166362A1 (en) 2011-05-31 2012-05-16 Gas distribution system for ceramic showerhead of plasma etch reactor

Publications (3)

Publication Number Publication Date
JP2014515561A JP2014515561A (ja) 2014-06-30
JP2014515561A5 JP2014515561A5 (enExample) 2015-06-25
JP6088493B2 true JP6088493B2 (ja) 2017-03-01

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US (2) US9245717B2 (enExample)
JP (1) JP6088493B2 (enExample)
KR (1) KR101947846B1 (enExample)
WO (1) WO2012166362A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019199822A3 (en) * 2018-04-10 2020-10-22 Applied Materials, Inc. Resolving spontaneous arcing during thick film deposition of high temperature amorphous carbon deposition

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8673080B2 (en) 2007-10-16 2014-03-18 Novellus Systems, Inc. Temperature controlled showerhead
SG192967A1 (en) 2011-03-04 2013-09-30 Novellus Systems Inc Hybrid ceramic showerhead
US9245717B2 (en) 2011-05-31 2016-01-26 Lam Research Corporation Gas distribution system for ceramic showerhead of plasma etch reactor
US8562785B2 (en) * 2011-05-31 2013-10-22 Lam Research Corporation Gas distribution showerhead for inductively coupled plasma etch reactor
US8900364B2 (en) * 2011-11-29 2014-12-02 Intermolecular, Inc. High productivity vapor processing system
US10316409B2 (en) 2012-12-21 2019-06-11 Novellus Systems, Inc. Radical source design for remote plasma atomic layer deposition
KR102104018B1 (ko) * 2013-03-12 2020-04-23 어플라이드 머티어리얼스, 인코포레이티드 방위각 및 방사상 분배 제어되는 다중-구역 가스 주입 조립체
US20140335679A1 (en) * 2013-05-09 2014-11-13 Applied Materials, Inc. Methods for etching a substrate
JP2015032597A (ja) * 2013-07-31 2015-02-16 日本ゼオン株式会社 プラズマエッチング方法
US11414759B2 (en) 2013-11-29 2022-08-16 Taiwan Semiconductor Manufacturing Co., Ltd Mechanisms for supplying process gas into wafer process apparatus
US9873940B2 (en) 2013-12-31 2018-01-23 Lam Research Corporation Coating system and method for coating interior fluid wetted surfaces of a component of a semiconductor substrate processing apparatus
US10032601B2 (en) * 2014-02-21 2018-07-24 Varian Semiconductor Equipment Associates, Inc. Platen support structure
US10741365B2 (en) * 2014-05-05 2020-08-11 Lam Research Corporation Low volume showerhead with porous baffle
US10249511B2 (en) * 2014-06-27 2019-04-02 Lam Research Corporation Ceramic showerhead including central gas injector for tunable convective-diffusive gas flow in semiconductor substrate processing apparatus
CN105986245A (zh) * 2015-02-16 2016-10-05 中微半导体设备(上海)有限公司 改善mocvd反应工艺的部件及改善方法
US10378107B2 (en) 2015-05-22 2019-08-13 Lam Research Corporation Low volume showerhead with faceplate holes for improved flow uniformity
US10023959B2 (en) * 2015-05-26 2018-07-17 Lam Research Corporation Anti-transient showerhead
CN108140550B (zh) * 2015-10-08 2022-10-14 应用材料公司 具有减少的背侧等离子体点火的喷淋头
USD819580S1 (en) * 2016-04-01 2018-06-05 Veeco Instruments, Inc. Self-centering wafer carrier for chemical vapor deposition
US10497542B2 (en) * 2016-01-04 2019-12-03 Daniel T. Mudd Flow control showerhead with integrated flow restrictors for improved gas delivery to a semiconductor process
TWI677593B (zh) * 2016-04-01 2019-11-21 美商應用材料股份有限公司 用於提供均勻流動的氣體的設備及方法
US9997336B2 (en) 2016-04-26 2018-06-12 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-zone gas distribution plate (GDP) and a method for designing the multi-zone GDP
US10403476B2 (en) 2016-11-09 2019-09-03 Lam Research Corporation Active showerhead
US10607817B2 (en) 2016-11-18 2020-03-31 Applied Materials, Inc. Thermal repeatability and in-situ showerhead temperature monitoring
US10604841B2 (en) 2016-12-14 2020-03-31 Lam Research Corporation Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition
US11694911B2 (en) * 2016-12-20 2023-07-04 Lam Research Corporation Systems and methods for metastable activated radical selective strip and etch using dual plenum showerhead
EP3568504A4 (en) * 2017-01-16 2021-01-06 Sustainable Energy Solutions, LLC METHOD AND DEVICE FOR PREVENTING DESUBLIMATION IN A DIRECT CONTACT HEAT EXCHANGER
DE202017105481U1 (de) * 2017-09-11 2018-12-12 Aixtron Se Gaseinlassorgan für einen CVD- oder PVD-Reaktor
US11670490B2 (en) 2017-09-29 2023-06-06 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit fabrication system with adjustable gas injector
CN111433902A (zh) 2017-12-08 2020-07-17 朗姆研究公司 向下游室传送自由基和前体气体以实现远程等离子体膜沉积的有改进的孔图案的集成喷头
US10840066B2 (en) 2018-06-13 2020-11-17 Taiwan Semiconductor Manufacturing Co., Ltd. Adjustable fastening device for plasma gas injectors
CN110858530B (zh) * 2018-08-24 2023-04-14 北京北方华创微电子装备有限公司 匹配网络、阻抗匹配器以及阻抗匹配方法
US12486574B2 (en) 2019-08-23 2025-12-02 Lam Research Corporation Thermally controlled chandelier showerhead
CN119980191A (zh) 2019-08-28 2025-05-13 朗姆研究公司 金属沉积
US12080522B2 (en) * 2020-04-22 2024-09-03 Applied Materials, Inc. Preclean chamber upper shield with showerhead
USD973609S1 (en) 2020-04-22 2022-12-27 Applied Materials, Inc. Upper shield with showerhead for a process chamber
CN113707524B (zh) * 2020-05-20 2022-06-10 江苏鲁汶仪器有限公司 一种阻挡等离子体反流的进气结构
US12340981B2 (en) * 2020-12-31 2025-06-24 Beijing E-town Semiconductor Technology Co., Ltd. Workpiece processing apparatus with outer gas channel insert
CN116688782B (zh) * 2023-08-04 2023-10-03 河北农业大学 一种农业用水肥农药混合装置

Family Cites Families (112)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2603382A (en) * 1952-07-15 Clamping ring for metal drum
DE2303474C3 (de) * 1973-01-25 1980-08-21 Wabco Fahrzeugbremsen Gmbh, 3000 Hannover Druckmittel-Verteilerblock
DE4241045C1 (de) 1992-12-05 1994-05-26 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silicium
CH687258A5 (de) * 1993-04-22 1996-10-31 Balzers Hochvakuum Gaseinlassanordnung.
US5680013A (en) 1994-03-15 1997-10-21 Applied Materials, Inc. Ceramic protection for heated metal surfaces of plasma processing chamber exposed to chemically aggressive gaseous environment therein and method of protecting such heated metal surfaces
US5597439A (en) 1994-10-26 1997-01-28 Applied Materials, Inc. Process gas inlet and distribution passages
US5895530A (en) 1996-02-26 1999-04-20 Applied Materials, Inc. Method and apparatus for directing fluid through a semiconductor processing chamber
US6440221B2 (en) 1996-05-13 2002-08-27 Applied Materials, Inc. Process chamber having improved temperature control
JP2000514136A (ja) 1996-06-28 2000-10-24 ラム リサーチ コーポレイション 高密度プラズマ化学蒸着装置および方法
US6013155A (en) 1996-06-28 2000-01-11 Lam Research Corporation Gas injection system for plasma processing
US5996528A (en) * 1996-07-02 1999-12-07 Novellus Systems, Inc. Method and apparatus for flowing gases into a manifold at high potential
US6152070A (en) 1996-11-18 2000-11-28 Applied Materials, Inc. Tandem process chamber
US5836355A (en) * 1996-12-03 1998-11-17 Insync Systems, Inc. Building blocks for integrated gas panel
EP0854210B1 (en) 1996-12-19 2002-03-27 Toshiba Ceramics Co., Ltd. Vapor deposition apparatus for forming thin film
US6286451B1 (en) 1997-05-29 2001-09-11 Applied Materials, Inc. Dome: shape and temperature controlled surfaces
US5968276A (en) 1997-07-11 1999-10-19 Applied Materials, Inc. Heat exchange passage connection
US6110556A (en) 1997-10-17 2000-08-29 Applied Materials, Inc. Lid assembly for a process chamber employing asymmetric flow geometries
US6106625A (en) 1997-12-02 2000-08-22 Applied Materials, Inc. Reactor useful for chemical vapor deposition of titanium nitride
US5971190A (en) * 1998-01-28 1999-10-26 Mannino; Anthony Split ring closure for cylindrical drum
EP1066107B1 (en) * 1998-03-23 2004-06-02 Amalgamated Research, Inc. Fractal stack for scaling and distribution of fluids
US6129808A (en) 1998-03-31 2000-10-10 Lam Research Corporation Low contamination high density plasma etch chambers and methods for making the same
US6230651B1 (en) 1998-12-30 2001-05-15 Lam Research Corporation Gas injection system for plasma processing
JP2000277509A (ja) * 1999-03-29 2000-10-06 Kokusai Electric Co Ltd 基板処理装置
US7515264B2 (en) 1999-06-15 2009-04-07 Tokyo Electron Limited Particle-measuring system and particle-measuring method
US6245192B1 (en) 1999-06-30 2001-06-12 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6415736B1 (en) 1999-06-30 2002-07-09 Lam Research Corporation Gas distribution apparatus for semiconductor processing
JP3485505B2 (ja) * 1999-09-17 2004-01-13 松下電器産業株式会社 処理装置
ATE542584T1 (de) * 2000-01-27 2012-02-15 Amalgamated Res Inc Vorrichtung zur behandlung von fluiden in einem flachen bett
US6635117B1 (en) 2000-04-26 2003-10-21 Axcelis Technologies, Inc. Actively-cooled distribution plate for reducing reactive gas temperature in a plasma processing system
JP2002064104A (ja) * 2000-08-16 2002-02-28 Tokyo Electron Ltd ガス処理装置
AU2002211730A1 (en) 2000-10-16 2002-04-29 Tokyo Electron Limited Plasma reactor with reduced reaction chamber
US6417626B1 (en) 2001-03-01 2002-07-09 Tokyo Electron Limited Immersed inductively—coupled plasma source
US6761796B2 (en) 2001-04-06 2004-07-13 Axcelis Technologies, Inc. Method and apparatus for micro-jet enabled, low-energy ion generation transport in plasma processing
DK1392419T3 (da) * 2001-05-17 2012-03-12 Amalgamated Res Inc Fraktal anordning til blanding og reaktorapplikationer
KR100400044B1 (ko) 2001-07-16 2003-09-29 삼성전자주식회사 간격 조절 장치를 가지는 웨이퍼 처리 장치의 샤워 헤드
JP4608827B2 (ja) * 2001-08-15 2011-01-12 ソニー株式会社 プラズマ処理装置及びプラズマ処理方法
US20030070620A1 (en) 2001-10-15 2003-04-17 Cooperberg David J. Tunable multi-zone gas injection system
US6998014B2 (en) 2002-01-26 2006-02-14 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
TWI283899B (en) 2002-07-09 2007-07-11 Applied Materials Inc Capacitively coupled plasma reactor with magnetic plasma control
JP4260450B2 (ja) 2002-09-20 2009-04-30 東京エレクトロン株式会社 真空処理装置における静電チャックの製造方法
KR100862658B1 (ko) * 2002-11-15 2008-10-10 삼성전자주식회사 반도체 처리 시스템의 가스 주입 장치
US20040142558A1 (en) * 2002-12-05 2004-07-22 Granneman Ernst H. A. Apparatus and method for atomic layer deposition on substrates
US7270713B2 (en) 2003-01-07 2007-09-18 Applied Materials, Inc. Tunable gas distribution plate assembly
CN100418187C (zh) 2003-02-07 2008-09-10 东京毅力科创株式会社 等离子体处理装置、环形部件和等离子体处理方法
US7070833B2 (en) 2003-03-05 2006-07-04 Restek Corporation Method for chemical vapor deposition of silicon on to substrates for use in corrosive and vacuum environments
KR100505367B1 (ko) * 2003-03-27 2005-08-04 주식회사 아이피에스 박막증착용 반응용기
WO2004097919A1 (ja) 2003-05-02 2004-11-11 Tokyo Electron Limited 処理ガス導入機構およびプラズマ処理装置
US8580076B2 (en) 2003-05-22 2013-11-12 Lam Research Corporation Plasma apparatus, gas distribution assembly for a plasma apparatus and processes therewith
US7581511B2 (en) * 2003-10-10 2009-09-01 Micron Technology, Inc. Apparatus and methods for manufacturing microfeatures on workpieces using plasma vapor processes
JP4273932B2 (ja) * 2003-11-07 2009-06-03 株式会社島津製作所 表面波励起プラズマｃｖｄ装置
US7771562B2 (en) 2003-11-19 2010-08-10 Tokyo Electron Limited Etch system with integrated inductive coupling
KR100550342B1 (ko) 2004-02-24 2006-02-08 삼성전자주식회사 가스 산포 방법, 및 샤워 헤드, 및 샤워 헤드를 구비하는반도체 기판 가공 장치
US20050230350A1 (en) 2004-02-26 2005-10-20 Applied Materials, Inc. In-situ dry clean chamber for front end of line fabrication
US20050223986A1 (en) 2004-04-12 2005-10-13 Choi Soo Y Gas diffusion shower head design for large area plasma enhanced chemical vapor deposition
US7048008B2 (en) * 2004-04-13 2006-05-23 Ultra Clean Holdings, Inc. Gas-panel assembly
US7785672B2 (en) 2004-04-20 2010-08-31 Applied Materials, Inc. Method of controlling the film properties of PECVD-deposited thin films
US20070066038A1 (en) 2004-04-30 2007-03-22 Lam Research Corporation Fast gas switching plasma processing apparatus
US7708859B2 (en) 2004-04-30 2010-05-04 Lam Research Corporation Gas distribution system having fast gas switching capabilities
US8317968B2 (en) * 2004-04-30 2012-11-27 Lam Research Corporation Apparatus including gas distribution member supplying process gas and radio frequency (RF) power for plasma processing
US8074599B2 (en) 2004-05-12 2011-12-13 Applied Materials, Inc. Plasma uniformity control by gas diffuser curvature
US20050284573A1 (en) 2004-06-24 2005-12-29 Egley Fred D Bare aluminum baffles for resist stripping chambers
JP4845385B2 (ja) * 2004-08-13 2011-12-28 東京エレクトロン株式会社 成膜装置
JP4701691B2 (ja) 2004-11-29 2011-06-15 東京エレクトロン株式会社 エッチング方法
US7722737B2 (en) * 2004-11-29 2010-05-25 Applied Materials, Inc. Gas distribution system for improved transient phase deposition
US7459100B2 (en) 2004-12-22 2008-12-02 Lam Research Corporation Methods and apparatus for sequentially alternating among plasma processes in order to optimize a substrate
US20060162661A1 (en) 2005-01-22 2006-07-27 Applied Materials, Inc. Mixing energized and non-energized gases for silicon nitride deposition
US7480974B2 (en) * 2005-02-15 2009-01-27 Lam Research Corporation Methods of making gas distribution members for plasma processing apparatuses
KR100915722B1 (ko) * 2005-06-23 2009-09-04 도쿄엘렉트론가부시키가이샤 반도체 처리 장치용의 구성 부재 및 그 제조 방법, 및반도체 처리 장치
JP2007123766A (ja) 2005-10-31 2007-05-17 Tokyo Electron Ltd エッチング方法、プラズマ処理装置及び記憶媒体
TWI409873B (zh) 2005-11-02 2013-09-21 松下電器產業股份有限公司 電漿處理裝置
TWI329135B (en) 2005-11-04 2010-08-21 Applied Materials Inc Apparatus and process for plasma-enhanced atomic layer deposition
US8088248B2 (en) 2006-01-11 2012-01-03 Lam Research Corporation Gas switching section including valves having different flow coefficients for gas distribution system
US20070227659A1 (en) 2006-03-31 2007-10-04 Tokyo Electron Limited Plasma etching apparatus
US8440049B2 (en) * 2006-05-03 2013-05-14 Applied Materials, Inc. Apparatus for etching high aspect ratio features
US8475625B2 (en) 2006-05-03 2013-07-02 Applied Materials, Inc. Apparatus for etching high aspect ratio features
JP5463536B2 (ja) * 2006-07-20 2014-04-09 北陸成型工業株式会社 シャワープレート及びその製造方法、並びにそのシャワープレートを用いたプラズマ処理装置、プラズマ処理方法及び電子装置の製造方法
JP5010234B2 (ja) * 2006-10-23 2012-08-29 北陸成型工業株式会社 ガス放出孔部材を一体焼結したシャワープレートおよびその製造方法
US7976671B2 (en) * 2006-10-30 2011-07-12 Applied Materials, Inc. Mask etch plasma reactor with variable process gas distribution
US20080193673A1 (en) * 2006-12-05 2008-08-14 Applied Materials, Inc. Method of processing a workpiece using a mid-chamber gas distribution plate, tuned plasma flow control grid and electrode
CN101583736A (zh) 2007-01-19 2009-11-18 应用材料股份有限公司 浸没式等离子体室
US8906249B2 (en) 2007-03-22 2014-12-09 Panasonic Corporation Plasma processing apparatus and plasma processing method
TW200849344A (en) * 2007-03-23 2008-12-16 Matsushita Electric Industrial Co Ltd Apparatus and method for plasma doping
US20080236490A1 (en) * 2007-03-29 2008-10-02 Alexander Paterson Plasma reactor with an overhead inductive antenna and an overhead gas distribution showerhead
JP5058727B2 (ja) * 2007-09-06 2012-10-24 東京エレクトロン株式会社 天板構造及びこれを用いたプラズマ処理装置
US20090159213A1 (en) * 2007-12-19 2009-06-25 Applied Materials, Inc. Plasma reactor gas distribution plate having a path splitting manifold immersed within a showerhead
US8512509B2 (en) * 2007-12-19 2013-08-20 Applied Materials, Inc. Plasma reactor gas distribution plate with radially distributed path splitting manifold
US20090162262A1 (en) * 2007-12-19 2009-06-25 Applied Material, Inc. Plasma reactor gas distribution plate having path splitting manifold side-by-side with showerhead
JP2011508436A (ja) 2007-12-21 2011-03-10 アプライド マテリアルズ インコーポレイテッド 基板の温度を制御するための方法及び装置
CN102027574B (zh) 2008-02-08 2014-09-10 朗姆研究公司 等离子体处理室部件的保护性涂层及其使用方法
US20090221149A1 (en) * 2008-02-28 2009-09-03 Hammond Iv Edward P Multiple port gas injection system utilized in a semiconductor processing system
US8236133B2 (en) * 2008-05-05 2012-08-07 Applied Materials, Inc. Plasma reactor with center-fed multiple zone gas distribution for improved uniformity of critical dimension bias
JP2009302324A (ja) * 2008-06-13 2009-12-24 Tokyo Electron Ltd ガスリング、半導体基板処理装置および半導体基板処理方法
US8221582B2 (en) 2008-07-07 2012-07-17 Lam Research Corporation Clamped monolithic showerhead electrode
US8291935B1 (en) * 2009-04-07 2012-10-23 Novellus Systems, Inc. Flexible gas mixing manifold
US8272346B2 (en) * 2009-04-10 2012-09-25 Lam Research Corporation Gasket with positioning feature for clamped monolithic showerhead electrode
KR101071937B1 (ko) * 2009-08-10 2011-10-11 이승룡 질소가스 분사장치
DE212010000009U1 (de) * 2009-09-10 2011-05-26 LAM RESEARCH CORPORATION (Delaware Corporation), California Auswechselbare obere Kammerteile einer Plasmaverarbeitungsvorrichtung
US8419959B2 (en) 2009-09-18 2013-04-16 Lam Research Corporation Clamped monolithic showerhead electrode
JP3160877U (ja) 2009-10-13 2010-07-15 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ シャワーヘッド電極アセンブリの端部クランプ留めおよび機械固定される内側電極
US9540731B2 (en) * 2009-12-04 2017-01-10 Applied Materials, Inc. Reconfigurable multi-zone gas delivery hardware for substrate processing showerheads
US9034142B2 (en) 2009-12-18 2015-05-19 Novellus Systems, Inc. Temperature controlled showerhead for high temperature operations
US20110206833A1 (en) 2010-02-22 2011-08-25 Lam Research Corporation Extension electrode of plasma bevel etching apparatus and method of manufacture thereof
JP5740203B2 (ja) * 2010-05-26 2015-06-24 東京エレクトロン株式会社 プラズマ処理装置及びその処理ガス供給構造
US9523155B2 (en) 2012-12-12 2016-12-20 Novellus Systems, Inc. Enhancement of electrolyte hydrodynamics for efficient mass transfer during electroplating
US8573152B2 (en) 2010-09-03 2013-11-05 Lam Research Corporation Showerhead electrode
US8562785B2 (en) * 2011-05-31 2013-10-22 Lam Research Corporation Gas distribution showerhead for inductively coupled plasma etch reactor
US9245717B2 (en) 2011-05-31 2016-01-26 Lam Research Corporation Gas distribution system for ceramic showerhead of plasma etch reactor
US9394615B2 (en) 2012-04-27 2016-07-19 Applied Materials, Inc. Plasma resistant ceramic coated conductive article
JP6157061B2 (ja) 2012-05-11 2017-07-05 東京エレクトロン株式会社 ガス供給装置及び基板処理装置
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
JP6007143B2 (ja) 2013-03-26 2016-10-12 東京エレクトロン株式会社 シャワーヘッド、プラズマ処理装置、及びプラズマ処理方法
US20150348755A1 (en) 2014-05-29 2015-12-03 Charm Engineering Co., Ltd. Gas distribution apparatus and substrate processing apparatus including same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019199822A3 (en) * 2018-04-10 2020-10-22 Applied Materials, Inc. Resolving spontaneous arcing during thick film deposition of high temperature amorphous carbon deposition

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