JP6080009B2 - 半導体集積回路装置及びその製造方法、並びに該半導体集積回路装置に使用する低抵抗率銅配線の探索方法 - Google Patents
半導体集積回路装置及びその製造方法、並びに該半導体集積回路装置に使用する低抵抗率銅配線の探索方法 Download PDFInfo
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- 239000010949 copper Substances 0.000 title claims description 233
- 229910052802 copper Inorganic materials 0.000 title claims description 209
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims description 205
- 239000004065 semiconductor Substances 0.000 title claims description 76
- 238000000034 method Methods 0.000 title claims description 62
- 238000004519 manufacturing process Methods 0.000 title claims description 33
- 239000012535 impurity Substances 0.000 claims description 95
- 238000007747 plating Methods 0.000 claims description 62
- 239000000460 chlorine Substances 0.000 claims description 59
- 239000013078 crystal Substances 0.000 claims description 58
- 150000001875 compounds Chemical class 0.000 claims description 57
- 229910000365 copper sulfate Inorganic materials 0.000 claims description 38
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 claims description 38
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 35
- 229910052801 chlorine Inorganic materials 0.000 claims description 30
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 229910052760 oxygen Inorganic materials 0.000 claims description 23
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 14
- 239000000654 additive Substances 0.000 claims description 11
- 239000001257 hydrogen Substances 0.000 claims description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims description 10
- 238000009713 electroplating Methods 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 238000000746 purification Methods 0.000 claims description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 7
- 238000004090 dissolution Methods 0.000 claims description 5
- 238000010575 fractional recrystallization Methods 0.000 claims description 5
- 230000000694 effects Effects 0.000 description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 20
- 229910052814 silicon oxide Inorganic materials 0.000 description 20
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 18
- 230000004888 barrier function Effects 0.000 description 17
- 229910052581 Si3N4 Inorganic materials 0.000 description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 16
- 238000000137 annealing Methods 0.000 description 12
- 230000008569 process Effects 0.000 description 12
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- 238000005516 engineering process Methods 0.000 description 10
- 238000011156 evaluation Methods 0.000 description 10
- 230000007423 decrease Effects 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 9
- 229910052742 iron Inorganic materials 0.000 description 9
- -1 chlorine ions Chemical class 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 238000000921 elemental analysis Methods 0.000 description 7
- 229910052736 halogen Inorganic materials 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 238000001036 glow-discharge mass spectrometry Methods 0.000 description 6
- 230000010354 integration Effects 0.000 description 6
- 229910052715 tantalum Inorganic materials 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 229910052725 zinc Inorganic materials 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 238000013508 migration Methods 0.000 description 5
- 230000005012 migration Effects 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 230000000996 additive effect Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 229910020366 ClO 4 Inorganic materials 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 238000003917 TEM image Methods 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 150000001879 copper Chemical class 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001803 electron scattering Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000003050 experimental design method Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- LHOWRPZTCLUDOI-UHFFFAOYSA-K iron(3+);triperchlorate Chemical compound [Fe+3].[O-]Cl(=O)(=O)=O.[O-]Cl(=O)(=O)=O.[O-]Cl(=O)(=O)=O LHOWRPZTCLUDOI-UHFFFAOYSA-K 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NGMTUCFCIUGWAG-UHFFFAOYSA-L [Cu+2].[O-]Cl=O.[O-]Cl=O Chemical compound [Cu+2].[O-]Cl=O.[O-]Cl=O NGMTUCFCIUGWAG-UHFFFAOYSA-L 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- YRNNKGFMTBWUGL-UHFFFAOYSA-L copper(ii) perchlorate Chemical compound [Cu+2].[O-]Cl(=O)(=O)=O.[O-]Cl(=O)(=O)=O YRNNKGFMTBWUGL-UHFFFAOYSA-L 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- WIYCQLLGDNXIBA-UHFFFAOYSA-L disodium;3-(3-sulfonatopropyldisulfanyl)propane-1-sulfonate Chemical compound [Na+].[Na+].[O-]S(=O)(=O)CCCSSCCCS([O-])(=O)=O WIYCQLLGDNXIBA-UHFFFAOYSA-L 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000010191 image analysis Methods 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 159000000014 iron salts Chemical class 0.000 description 1
- CKFMJXZQTNRXGX-UHFFFAOYSA-L iron(2+);diperchlorate Chemical compound [Fe+2].[O-]Cl(=O)(=O)=O.[O-]Cl(=O)(=O)=O CKFMJXZQTNRXGX-UHFFFAOYSA-L 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 239000006259 organic additive Substances 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76883—Post-treatment or after-treatment of the conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Description
[1]本発明は、回路素子が形成された半導体基体と、前記半導体基体の主表面上に形成された絶縁層と、少なくとも前記絶縁層を利用して形成されたトレンチと、電解銅めっきによって前記トレンチ内に形成された銅配線とを備え、前記銅配線の線幅が100nm以下で、前記銅配線の結晶粒界に不純物として存在する金属元素、塩素(Cl)及び酸素(O)からなる化合物の濃度が、該化合物に含まれる塩素濃度で換算したときに2.0原子%以下であることを特徴とする半導体集積回路装置を提供する。
[2]本発明は、前記の金属元素、Cl及びOからなる化合物に含まれる金属元素が、銅(Cu)又は鉄(Fe)であることを特徴とする前記[1]に記載の半導体集積回路装置を提供する。
[3]本発明は、前記化合物がFe、Cl及びOからなる化合物であり、前記化合物の濃度が、前記化合物に含まれるFe濃度で換算したときに1.1原子%以下であることを特徴とする前記[1]又は[2]に記載の半体集積回路装置を提供する。
[4]本発明は、前記[1]〜[3]の何れかに記載の半導体集積回路装置の製造方法であって、純度が99.9999質量%を超える硫酸銅結晶体を溶解した硫酸銅めっき浴と、アノードに純度が99.9999質量%を超える銅電極とを用いた電解めっきによって前記トレンチ内に銅めっき層からなる前記銅配線を形成することを特徴とする半導体集積回路装置の製造方法を提供する。
[5]本発明は、前記硫酸銅結晶及び前記銅電極が、それぞれ分別再結晶及び水素プラズマ溶解精製によって得られることを特徴とする前記[4]に記載の半導体集積回路装置の製造方法を提供する。
[6]本発明は、前記硫酸銅めっき浴が、さらに添加剤としてアクセラレータ、サプレッサ及びレベラーを有し、前記銅配線の結晶粒界に存在する不純物の濃度を低減するために、前記レベラーの添加量を、前記硫酸銅めっき浴中のめっき液1l(リットル)に対して1ml未満及び0.1ml以上にすることを特徴とする前記[5]又は[6]に記載の半導体集積回路の製造方法を提供する。
[7]本発明は、回路素子が形成された半導体基体と、前記半導体基体の主表面上に形成された絶縁層と、少なくとも前記絶縁層を利用して形成されたトレンチと、電解銅めっきによって前記トレンチ内に形成された銅配線とを備える半導体集積回路装置において、前記銅配線の結晶粒界に不純物として存在する金属元素、塩素(Cl)及び酸素(O)からなる化合物に含まれる塩素濃度を測定し、該塩素濃度が2.0原子%以下であるときの銅配線を前記半導体集積回路装置に適用することを特徴とする低抵抗率銅配線の探索方法を提供する。
[8]本発明は、前記の金属元素、Cl及びOからなる化合物に含まれる金属元素が、銅(Cu)又は鉄(Fe)であることを特徴とする前記[7]に記載の低抵抗率銅配線の探索方法を提供する。
[9]本発明は、前記化合物がFe、Cl及びOからなる化合物であり、前記化合物に含まれるFe濃度が1.1原子%以下であるときの銅配線を前記半導体集積回路装置に適用することを特徴とする前記[7]又は[8]に記載の低抵抗率銅配線の探索方法を提供する。
[発明の効果]
本実施形態によって、本発明の銅配線の結晶粒界に偏析して存在する不純物の同定方法とその結果について説明する。なお、本発明の銅配線の形成方法については、後に銅配線の抵抗率と対比させながら具体的に述べる。
次に、結晶粒界に不純物として存在する化合物の濃度と銅配線の抵抗率との関係を第2の実施形態として説明する。
第3の実施形態として、本発明による銅配線の製造方法について説明する。
本発明の半導体集積回路装置及びその製造方法の好ましい実施形態を図面を用いて説明する。
Claims (9)
- 回路素子が形成された半導体基体と、前記半導体基体の主表面上に形成された絶縁層と、少なくとも前記絶縁層を利用して形成されたトレンチと、電解銅めっきによって前記トレンチ内に形成された銅配線とを備え、前記銅配線の線幅が100nm以下で、前記銅配線の結晶粒界に不純物として存在する金属元素、塩素(Cl)及び酸素(O)からなる化合物の濃度が、該化合物に含まれる塩素濃度で換算したときに2.0原子%以下であることを特徴とする半導体集積回路装置。
- 前記の金属元素、Cl及びOからなる化合物に含まれる金属元素が、銅(Cu)又は鉄(Fe)であることを特徴とする請求項1に記載の半導体集積回路装置。
- 前記化合物がFe、Cl及びOからなる化合物であり、前記化合物の濃度が、前記化合物に含まれるFe濃度で換算したときに1.1原子%以下であることを特徴とする請求項1又は2に記載の半導体集積回路装置。
- 請求項1〜3の何れかに記載の半導体集積回路装置の製造方法であって、純度が99.9999質量%を超える硫酸銅結晶体を溶解した硫酸銅めっき浴と、アノードに純度が99.9999質量%を超える銅電極とを用いた電解めっきによって前記トレンチ内に銅めっき層からなる前記銅配線を形成することを特徴とする半導体集積回路装置の製造方法。
- 前記硫酸銅結晶及び前記銅電極は、それぞれ分別再結晶及び水素プラズマ溶解精製によって得られることを特徴とする請求項4に記載の半導体集積回路装置の製造方法。
- 前記硫酸銅めっき浴は添加剤としてアクセラレータ、サプレッサ及びレベラーを有し、前記銅配線の結晶粒界に存在する不純物の濃度を低減するために、前記レベラーの添加量を前記硫酸銅めっき浴中のめっき液1l(リットル)に対して1ml未満及び0.1ml以上にすることを特徴とする請求項5又は6に記載の半導体集積回路の製造方法。
- 回路素子が形成された半導体基体と、前記半導体基体の主表面上に形成された絶縁層と、少なくとも前記絶縁層を利用して形成されたトレンチと、電解銅めっきによって前記トレンチ内に形成された銅配線とを備える半導体集積回路装置において、前記銅配線の結晶粒界に不純物として存在する金属元素、塩素(Cl)及び酸素(O)からなる化合物に含まれる塩素濃度を測定し、該塩素濃度が2.0原子%以下であるときの銅配線を前記半導体集積回路装置に適用することを特徴とする低抵抗率銅配線の探索方法。
- 前記の金属元素、Cl及びOからなる化合物に含まれる金属元素が、銅(Cu)又は鉄(Fe)であることを特徴とする請求項7に記載の低抵抗率銅配線の探索方法。
- 前記化合物がFe、Cl及びOからなる化合物であり、前記化合物に含まれるFe濃度が1.1原子%以下であるときの銅配線を前記半導体集積回路装置に適用することを特徴とする請求項7又は8に記載の低抵抗率銅配線の探索方法。
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