JP6683987B2 - 超低抵抗率銅配線を有する半導体集積回路装置 - Google Patents
超低抵抗率銅配線を有する半導体集積回路装置 Download PDFInfo
- Publication number
- JP6683987B2 JP6683987B2 JP2015183828A JP2015183828A JP6683987B2 JP 6683987 B2 JP6683987 B2 JP 6683987B2 JP 2015183828 A JP2015183828 A JP 2015183828A JP 2015183828 A JP2015183828 A JP 2015183828A JP 6683987 B2 JP6683987 B2 JP 6683987B2
- Authority
- JP
- Japan
- Prior art keywords
- copper
- ppm
- copper wiring
- impurities
- additive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000010949 copper Substances 0.000 title claims description 202
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims description 176
- 229910052802 copper Inorganic materials 0.000 title claims description 172
- 239000004065 semiconductor Substances 0.000 title claims description 34
- 239000012535 impurity Substances 0.000 claims description 102
- 239000013078 crystal Substances 0.000 claims description 64
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 28
- 230000000694 effects Effects 0.000 claims description 24
- 239000010936 titanium Substances 0.000 claims description 24
- 239000011575 calcium Substances 0.000 claims description 19
- 239000011669 selenium Substances 0.000 claims description 17
- 239000011734 sodium Substances 0.000 claims description 17
- 239000011651 chromium Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 16
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 15
- 229910052719 titanium Inorganic materials 0.000 claims description 15
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 11
- 229910052791 calcium Inorganic materials 0.000 claims description 11
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 10
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 10
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 10
- 229910052785 arsenic Inorganic materials 0.000 claims description 10
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 10
- 239000011591 potassium Substances 0.000 claims description 10
- 229910052700 potassium Inorganic materials 0.000 claims description 10
- 229910052711 selenium Inorganic materials 0.000 claims description 10
- 229910052708 sodium Inorganic materials 0.000 claims description 10
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 9
- 229910001902 chlorine oxide Inorganic materials 0.000 claims description 9
- MAYPHUUCLRDEAZ-UHFFFAOYSA-N chlorine peroxide Chemical compound ClOOCl MAYPHUUCLRDEAZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052804 chromium Inorganic materials 0.000 claims description 9
- 238000009713 electroplating Methods 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 8
- 229910052742 iron Inorganic materials 0.000 claims description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 5
- 239000011701 zinc Substances 0.000 claims description 5
- 229910052725 zinc Inorganic materials 0.000 claims description 5
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 239000000654 additive Substances 0.000 description 73
- 230000000996 additive effect Effects 0.000 description 73
- 239000000460 chlorine Substances 0.000 description 15
- 239000008151 electrolyte solution Substances 0.000 description 15
- 238000007747 plating Methods 0.000 description 14
- 238000004458 analytical method Methods 0.000 description 13
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 229910052801 chlorine Inorganic materials 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 9
- NHYCGSASNAIGLD-UHFFFAOYSA-N Chlorine monoxide Chemical compound Cl[O] NHYCGSASNAIGLD-UHFFFAOYSA-N 0.000 description 8
- 230000007423 decrease Effects 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 8
- 238000005259 measurement Methods 0.000 description 7
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 3
- 229910001385 heavy metal Inorganic materials 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000013507 mapping Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000002050 diffraction method Methods 0.000 description 2
- 230000007717 exclusion Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- JZCCFEFSEZPSOG-UHFFFAOYSA-L copper(II) sulfate pentahydrate Chemical compound O.O.O.O.O.[Cu+2].[O-]S([O-])(=O)=O JZCCFEFSEZPSOG-UHFFFAOYSA-L 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000001887 electron backscatter diffraction Methods 0.000 description 1
- 238000002524 electron diffraction data Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- -1 potassium (K) Chemical class 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
Images
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electroplating Methods And Accessories (AREA)
Description
110:結晶粒界
111:結晶粒界
200:不純物
201:不純物
210:不純物
211:不純物
212:不純物
213:不純物
300:クラスター
400:銅配線メッキ
401:電解メッキ装置
410:基板
420:絶縁体
430:薄膜
431:薄膜
440:シード層
450:配線溝
460:アノード
470:電解液
480:回転電極
490:回転子
500:コントローラ
510:電流制御装置
520:パルス発生器
550:化学的機械研磨
600:電子線後方散乱回折法
610:電子線
620:検出器
650:方位マッピング像
660:逆極点図
670:座標系
680:高さ
Claims (4)
- 半導体集積回路装置において電気メッキ及び熱処理によって銅配線における銅結晶粒を成長させるにあたり、銅との親和性が高く、かつ、塩素酸化物との親和性も高い元素を、銅の結晶粒界の移動をピン止め効果によって阻害する不純物として特定し、
特定された前記不純物が混入しないプロセスで前記電気メッキ及び前記熱処理を行い、
前記不純物の濃度が、鉄について0.03ppm以下、クロムについて0.009ppm以下、チタンについて0.019ppm以下、砒素について0.04ppm以下、及びジルコニウムについて0.2ppm以下となるように前記銅配線を形成する、
ことを特徴とする銅配線の形成方法。 - 前記銅との親和性を、銅と不純物とが結合している状態と結合しないで独立でいる状態との差を示す凝集エネルギーを算出することにより判断し、
前記塩素酸化物との親和性を、塩素酸化物と不純物とが結合している状態と結合しないで独立でいる状態との差を示す凝集エネルギーを算出することにより判断する、
ことを特徴とする請求項1に記載の銅配線の形成方法。 - さらに前記不純物の濃度が、カリウムについて0.057ppm以下、ナトリウムについて0.23ppm以下、及びカルシウムについて0.56ppm以下となるように前記銅配線を形成する、
ことを特徴とする請求項1又は2に記載の銅配線の形成方法。 - さらに前記不純物の濃度が、セレンについて0.25ppm以下、及び亜鉛について2.1ppm以下となるように前記銅配線を形成する、
ことを特徴とする請求項3に記載の銅配線の形成方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015038589 | 2015-02-27 | ||
JP2015038589 | 2015-02-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016164965A JP2016164965A (ja) | 2016-09-08 |
JP6683987B2 true JP6683987B2 (ja) | 2020-04-22 |
Family
ID=56876739
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015183828A Active JP6683987B2 (ja) | 2015-02-27 | 2015-09-17 | 超低抵抗率銅配線を有する半導体集積回路装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP6683987B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110168706B (zh) * | 2017-01-20 | 2023-04-04 | 凸版印刷株式会社 | 显示装置以及显示装置基板 |
-
2015
- 2015-09-17 JP JP2015183828A patent/JP6683987B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JP2016164965A (ja) | 2016-09-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI432613B (zh) | 電鍍沉積之奈米雙晶銅金屬層及其製備方法 | |
Lee et al. | Influence of additives on electroplated copper films and their solder joints | |
JP5740052B2 (ja) | 電解銅箔及びその製造方法 | |
Lee et al. | Development of nanotwins in electroplated copper and its effect on shear strength of tin/copper joint | |
Zheng et al. | Study of grain size effect of Cu metallization on interfacial microstructures of solder joints | |
TWI522497B (zh) | 電鍍銅用含磷銅陽極,其製造方法及電鍍銅之方法 | |
JP6683987B2 (ja) | 超低抵抗率銅配線を有する半導体集積回路装置 | |
Yang et al. | Atomic locations of minor dopants and their roles in the stabilization of η-C u 6 S n 5 | |
Strehle et al. | Electroplating of Cu (Ag) thin films for interconnect applications | |
JP6649303B2 (ja) | 銅配線及びその製造方法 | |
CN107354482B (zh) | 精炼铜的制造方法和精炼铜以及电线的制造方法和电线 | |
JP2006052441A (ja) | 銅箔及びその製造方法、並びにtabテープ | |
Fang et al. | Atomic layer deposition of copper and copper silver films using an electrochemical process | |
US10329681B2 (en) | Copper-silver dual-component metal electroplating solution and electroplating method for semiconductor wire | |
JP6080009B2 (ja) | 半導体集積回路装置及びその製造方法、並びに該半導体集積回路装置に使用する低抵抗率銅配線の探索方法 | |
Chakraborty et al. | Nucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers | |
Ganjkhanlou et al. | Effect of pH on the electrodeposition of Cu (In, Al) Se 2 from aqueous solution in presence of citric acid as complexing agent | |
Inami et al. | Impact of Electroplating at Lower Leveler Content on the Formation of Low Resistivity Narrow Cu Interconnects | |
Moon et al. | Electrical Resistivity Modification of Electrodeposited Mo and Mo–Co Nanowires for Interconnect Applications | |
JP6960363B2 (ja) | Coアノード、Coアノードを用いた電気Coめっき方法及びCoアノードの評価方法 | |
JP5626582B2 (ja) | 電気銅めっき用含リン銅アノードおよびそれを用いた電気銅めっき方法 | |
Nagano et al. | Screening of Undesirable Elements Raising the Electrical Resistivity in Very Narrow Cu Wires by Ab Initio Calculation | |
JP2006291289A (ja) | 半導体装置の製造装置及び製造方法 | |
TW201719836A (zh) | 線路結構及其製備方法 | |
Inami et al. | Grain Size Distribution at the Bottom Region in Very Narrow Cu Interconnects |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AA64 | Notification of invalidation of claim of internal priority (with term) |
Free format text: JAPANESE INTERMEDIATE CODE: A241764 Effective date: 20151020 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180827 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20190524 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190625 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190724 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20191210 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200124 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20200124 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20200213 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20200303 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200319 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6683987 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |