JP6078694B2 - 成膜装置、有機膜の膜厚測定方法および有機膜用膜厚センサ - Google Patents

成膜装置、有機膜の膜厚測定方法および有機膜用膜厚センサ Download PDF

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Publication number
JP6078694B2
JP6078694B2 JP2016523133A JP2016523133A JP6078694B2 JP 6078694 B2 JP6078694 B2 JP 6078694B2 JP 2016523133 A JP2016523133 A JP 2016523133A JP 2016523133 A JP2016523133 A JP 2016523133A JP 6078694 B2 JP6078694 B2 JP 6078694B2
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film
frequency
organic
film thickness
organic material
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JPWO2015182090A1 (ja
Inventor
伊藤　敦
敦 伊藤
万里 深尾
万里 深尾
小林　義和
義和 小林
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Ulvac Inc
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Ulvac Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
    • C23C14/546—Controlling the film thickness or evaporation rate using measurement on deposited material using crystal oscillators
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/02—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
    • G01B7/06—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Length Measuring Devices Characterised By Use Of Acoustic Means (AREA)
  • Physical Vapour Deposition (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
  • Electroluminescent Light Sources (AREA)
JP2016523133A 2014-05-26 2015-05-22 成膜装置、有機膜の膜厚測定方法および有機膜用膜厚センサ Active JP6078694B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014107816 2014-05-26
JP2014107816 2014-05-26
PCT/JP2015/002580 WO2015182090A1 (ja) 2014-05-26 2015-05-22 成膜装置、有機膜の膜厚測定方法および有機膜用膜厚センサ

Publications (2)

Publication Number Publication Date
JP6078694B2 true JP6078694B2 (ja) 2017-02-08
JPWO2015182090A1 JPWO2015182090A1 (ja) 2017-04-20

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JP2016523133A Active JP6078694B2 (ja) 2014-05-26 2015-05-22 成膜装置、有機膜の膜厚測定方法および有機膜用膜厚センサ

Country Status (5)

Country Link
JP (1) JP6078694B2 (zh)
KR (2) KR102035146B1 (zh)
CN (1) CN106232858A (zh)
SG (1) SG11201608133PA (zh)
WO (1) WO2015182090A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220115978A (ko) 2019-12-17 2022-08-19 가부시키가이샤 알박 측정 이상 검출 장치 및 측정 이상 검출 방법

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10818564B2 (en) 2016-03-11 2020-10-27 Applied Materials, Inc. Wafer processing tool having a micro sensor
WO2017191796A1 (ja) 2016-05-06 2017-11-09 株式会社アルバック 薄膜製造装置、薄膜製造方法
WO2017195674A1 (ja) 2016-05-13 2017-11-16 株式会社アルバック 有機薄膜製造装置、有機薄膜製造方法
US10100410B2 (en) 2016-08-05 2018-10-16 Industrial Technology Research Institute Film thickness monitoring system and method using the same
JP6564745B2 (ja) 2016-09-06 2019-08-21 株式会社アルバック 膜厚センサ
US10763143B2 (en) 2017-08-18 2020-09-01 Applied Materials, Inc. Processing tool having a monitoring device
CN110257791B (zh) * 2019-04-29 2021-07-20 昆山国显光电有限公司 速率监控装置、蒸镀设备及蒸镀方法
TWI701641B (zh) * 2019-10-01 2020-08-11 龍翩真空科技股份有限公司 無線傳輸薄膜厚度監控裝置
CN111188020A (zh) * 2020-03-03 2020-05-22 成都晶砂科技有限公司 真空蒸馍设备
CN111206232A (zh) * 2020-03-03 2020-05-29 成都晶砂科技有限公司 真空蒸馍设备
CN111829428B (zh) * 2020-06-17 2022-02-15 华中科技大学 一种双石英晶振膜厚控制仪及误差校正方法

Citations (9)

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JPH08261743A (ja) * 1995-03-20 1996-10-11 Ulvac Japan Ltd 圧電結晶発振式膜厚計用発振回路
JPH09250918A (ja) * 1996-03-13 1997-09-22 Miyota Kk 電極成膜装置用モニター
JP2003240697A (ja) * 2002-02-14 2003-08-27 Semiconductor Leading Edge Technologies Inc 膜特性の解析方法及び膜特性の解析装置
JP2006118009A (ja) * 2004-10-22 2006-05-11 Canon Inc 薄膜の形成方法
JP2008245243A (ja) * 2007-02-26 2008-10-09 Epson Toyocom Corp 輪郭振動子、輪郭振動子の調整方法
JP2009185344A (ja) * 2008-02-07 2009-08-20 Sony Corp 蒸着方法、蒸着装置、および表示装置の製造方法
WO2010032328A1 (ja) * 2008-09-22 2010-03-25 パイオニア株式会社 Ｐｌｌ回路およびこれを用いた膜厚測定器
JP2010077469A (ja) * 2008-09-25 2010-04-08 Hitachi Zosen Corp 真空蒸着設備の膜厚検出装置
JP2010196082A (ja) * 2009-02-23 2010-09-09 Canon Inc 真空蒸着装置

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JPS605619A (ja) * 1983-06-23 1985-01-12 Seikosha Co Ltd 厚みすべり圧電振動子
JPH09326668A (ja) * 1996-04-02 1997-12-16 Seiko Epson Corp 圧電素子とその製造方法
JP3953301B2 (ja) 2001-11-05 2007-08-08 株式会社アルバック 水晶発振式膜厚モニタ用センサヘッド
JP4001296B2 (ja) * 2005-08-25 2007-10-31 トッキ株式会社 有機材料の真空蒸着方法およびその装置
WO2009038085A1 (ja) * 2007-09-21 2009-03-26 Ulvac, Inc. 薄膜形成装置、膜厚測定方法、膜厚センサー
KR101379646B1 (ko) * 2009-12-09 2014-03-28 가부시키가이샤 알박 유기 박막의 성막 장치 및 유기 재료 성막 방법
JP2014062310A (ja) * 2012-09-24 2014-04-10 Hitachi High-Technologies Corp 膜厚センサ並びにそれを用いた真空蒸着装置及び真空蒸着方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08261743A (ja) * 1995-03-20 1996-10-11 Ulvac Japan Ltd 圧電結晶発振式膜厚計用発振回路
JPH09250918A (ja) * 1996-03-13 1997-09-22 Miyota Kk 電極成膜装置用モニター
JP2003240697A (ja) * 2002-02-14 2003-08-27 Semiconductor Leading Edge Technologies Inc 膜特性の解析方法及び膜特性の解析装置
JP2006118009A (ja) * 2004-10-22 2006-05-11 Canon Inc 薄膜の形成方法
JP2008245243A (ja) * 2007-02-26 2008-10-09 Epson Toyocom Corp 輪郭振動子、輪郭振動子の調整方法
JP2009185344A (ja) * 2008-02-07 2009-08-20 Sony Corp 蒸着方法、蒸着装置、および表示装置の製造方法
WO2010032328A1 (ja) * 2008-09-22 2010-03-25 パイオニア株式会社 Ｐｌｌ回路およびこれを用いた膜厚測定器
JP2010077469A (ja) * 2008-09-25 2010-04-08 Hitachi Zosen Corp 真空蒸着設備の膜厚検出装置
JP2010196082A (ja) * 2009-02-23 2010-09-09 Canon Inc 真空蒸着装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220115978A (ko) 2019-12-17 2022-08-19 가부시키가이샤 알박 측정 이상 검출 장치 및 측정 이상 검출 방법

Also Published As

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JPWO2015182090A1 (ja) 2017-04-20
KR102035146B1 (ko) 2019-10-22
WO2015182090A1 (ja) 2015-12-03
KR20160127078A (ko) 2016-11-02
CN106232858A (zh) 2016-12-14
KR20180063369A (ko) 2018-06-11
SG11201608133PA (en) 2016-11-29

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