JP6073020B2 - 高品質で安定した出力ビーム、および長寿命高変換効率の非線形結晶を備えたレーザ - Google Patents
高品質で安定した出力ビーム、および長寿命高変換効率の非線形結晶を備えたレーザ Download PDFInfo
- Publication number
- JP6073020B2 JP6073020B2 JP2014522837A JP2014522837A JP6073020B2 JP 6073020 B2 JP6073020 B2 JP 6073020B2 JP 2014522837 A JP2014522837 A JP 2014522837A JP 2014522837 A JP2014522837 A JP 2014522837A JP 6073020 B2 JP6073020 B2 JP 6073020B2
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- laser system
- mode
- laser
- locked laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000013078 crystal Substances 0.000 title claims description 171
- 238000006243 chemical reaction Methods 0.000 title claims description 50
- 238000000034 method Methods 0.000 claims description 43
- 230000003287 optical effect Effects 0.000 claims description 32
- 238000007493 shaping process Methods 0.000 claims description 23
- 238000000926 separation method Methods 0.000 claims description 20
- 238000005452 bending Methods 0.000 claims description 6
- 235000019796 monopotassium phosphate Nutrition 0.000 claims description 5
- NNAZVIPNYDXXPF-UHFFFAOYSA-N [Li+].[Cs+].OB([O-])[O-] Chemical compound [Li+].[Cs+].OB([O-])[O-] NNAZVIPNYDXXPF-UHFFFAOYSA-N 0.000 claims description 4
- VCZFPTGOQQOZGI-UHFFFAOYSA-N lithium bis(oxoboranyloxy)borinate Chemical compound [Li+].[O-]B(OB=O)OB=O VCZFPTGOQQOZGI-UHFFFAOYSA-N 0.000 claims description 3
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 3
- JDLDTRXYGQMDRV-UHFFFAOYSA-N tricesium;borate Chemical compound [Cs+].[Cs+].[Cs+].[O-]B([O-])[O-] JDLDTRXYGQMDRV-UHFFFAOYSA-N 0.000 claims description 3
- XBJJRSFLZVLCSE-UHFFFAOYSA-N barium(2+);diborate Chemical compound [Ba+2].[Ba+2].[Ba+2].[O-]B([O-])[O-].[O-]B([O-])[O-] XBJJRSFLZVLCSE-UHFFFAOYSA-N 0.000 claims description 2
- 229910000402 monopotassium phosphate Inorganic materials 0.000 claims description 2
- PJNZPQUBCPKICU-UHFFFAOYSA-N phosphoric acid;potassium Chemical compound [K].OP(O)(O)=O PJNZPQUBCPKICU-UHFFFAOYSA-N 0.000 claims description 2
- 238000007689 inspection Methods 0.000 description 25
- 230000010287 polarization Effects 0.000 description 25
- 230000008569 process Effects 0.000 description 23
- 238000005286 illumination Methods 0.000 description 22
- 230000007547 defect Effects 0.000 description 20
- 238000000137 annealing Methods 0.000 description 17
- 239000012535 impurity Substances 0.000 description 14
- 238000010521 absorption reaction Methods 0.000 description 13
- 239000002245 particle Substances 0.000 description 12
- 201000009310 astigmatism Diseases 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- 238000001514 detection method Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000006731 degradation reaction Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000005728 strengthening Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 239000007858 starting material Substances 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 2
- 238000002329 infrared spectrum Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000000116 mitigating effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000003230 hygroscopic agent Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0092—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for nonlinear frequency conversion, e.g. second harmonic generation [SHG] or sum- or difference-frequency generation outside the laser cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
- H01S3/0092—Nonlinear frequency conversion, e.g. second harmonic generation [SHG] or sum- or difference-frequency generation outside the laser cavity
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B33/00—Severing cooled glass
- C03B33/02—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/14—Phosphates
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/30—Niobates; Vanadates; Tantalates
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/94—Investigating contamination, e.g. dust
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/355—Non-linear optics characterised by the materials used
- G02F1/3551—Crystals
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/37—Non-linear optics for second-harmonic generation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/10038—Amplitude control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/10038—Amplitude control
- H01S3/10046—Pulse repetition rate control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/06—Illumination; Optics
- G01N2201/061—Sources
- G01N2201/06113—Coherent sources; lasers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/06—Illumination; Optics
- G01N2201/063—Illuminating optical parts
- G01N2201/0636—Reflectors
- G01N2201/0637—Elliptic
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/06—Illumination; Optics
- G01N2201/068—Optics, miscellaneous
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/3501—Constructional details or arrangements of non-linear optical devices, e.g. shape of non-linear crystals
- G02F1/3505—Coatings; Housings; Supports
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/3501—Constructional details or arrangements of non-linear optical devices, e.g. shape of non-linear crystals
- G02F1/3507—Arrangements comprising two or more nonlinear optical devices
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/353—Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/353—Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams
- G02F1/354—Third or higher harmonic generation
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/355—Non-linear optics characterised by the materials used
- G02F1/3551—Crystals
- G02F1/3553—Crystals having the formula MTiOYO4, where M=K, Rb, TI, NH4 or Cs and Y=P or As, e.g. KTP
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/20—LiNbO3, LiTaO3
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Nonlinear Science (AREA)
- Pathology (AREA)
- Immunology (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- Thermal Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Lasers (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Description
本願は、「Mode−Locked UV Laser With High Quality,Stable Output Beam, Long−Life High Conversion Efficiency Non−Linear Crystal And A Wafer Inspection Using A Mode−Locked UVLaser」と題し、2011年7月22日に出願された米国仮出願第61/510,633号の優先権を主張する。
の因数で縮小されることになる。さらに、ビーム成形光学部品106を実装するための光学部品も出力ビームのより短い波長の主原因となるはずである。特に、より高いレーザ出力および/またはより短いレーザ波長が、より高速でのより小さな欠陥の検出を可能にする。M2=1.0に近い高品質ビームを小さなスポットまたは狭い線にぴったりと集束し、それによって小さい欠陥の検出を容易にすることができる。1.0のM2値が理想的なガウス断面のあるレーザビームに相当することに留意されたい。好ましい一実施形態では、ビーム成形光学部品106は約1.2未満であるM2値の出力ビームを生じさせることができる。
Claims (12)
- 低温で動作可能なモードロックレーザシステムであって、
光源と、
アニールされた周波数変換結晶と、
前記低温での標準動作中に前記結晶のアニール状態を維持するためのハウジングと、
前記光源からビームを受光し、前記結晶内にまたは前記結晶に近接して位置するビームウエストでの楕円断面に前記ビームを集束するように構成された第1のビーム成形光学部品と、
前記結晶からの出力を、空間で分離された異なる周波数のビームに分割するための高調波分離ブロックと、
を備え、
前記結晶が、非ウォークオフ方向でのレイリー領域の2倍、およびラジアン単位のウォークオフ角で除算されたウォークオフ方向でのビームウエスト半径の2倍の長さの小さい方にほぼ等しい長さを有する、
モードロックレーザシステム。 - 前記結晶が、約266nmの高調波を生じさせ、前記長さが少なくとも12.5mmであるセシウムホウ酸リチウム(CLBO)結晶である、請求項1に記載のモードロックレーザシステム。
- 所望される周波数ビームの楕円断面を所望されるアスペクト比に変換するように構成された第2のビーム成形光学部品をさらに含む、請求項1に記載のモードロックレーザシステム。
- 前記結晶の前記楕円断面が2:1と6:1との間のアスペクト比を有する、請求項1に記載のモードロックレーザシステム。
- 前記第1のビーム成形光学部品が、プリズム、円筒形湾曲素子、放射状‐対称湾曲素子、および屈折素子の内の少なくとも1つを含む、請求項1に記載のモードロックレーザシステム。
- 前記高調波分離ブロックがプリズムを含む、請求項1に記載のモードロックレーザシステム。
- 前記プリズムがペラン‐ブロカプリズムである、請求項6に記載のモードロックレーザシステム。
- 前記結晶が、CLBO(セシウムホウ酸リチウム)結晶、CBO(ホウ酸セシウム)結晶、BBO(βホウ酸バリウム)結晶、LBO(三ホウ酸リチウム)結晶、ニオブ酸リチウム結晶、KDP(リン酸二水素カリウム)結晶、または別の非線形光学結晶の内の1つである、請求項1に記載のモードロックレーザシステム。
- 前記光源の光周波数高調波を生成するための第2のアニールされた周波数変換結晶をさらに含む、請求項1に記載のモードロックレーザシステム。
- 低温でレーザシステムを操作する方法であって、
光源から、アニールされた周波数変換結晶内にまたはアニールされた周波数変換結晶に近接して位置するビームウエストでの楕円断面の中にビームを集束すること、
前記結晶の出力から、任意の望ましくない周波数ビームから所望される周波数ビームを分離すること、
を含み、
前記結晶が、非ウォークオフ方向でのレイリー領域の2倍、およびラジアン単位のウォークオフ角で除算されたウォークオフ方向でのビームウエスト半径の2倍の長さの小さい方にほぼ等しい長さを有する、
方法。 - 前記低温での標準動作中に前記結晶のアニール状態を維持することをさらに含む、請求項10に記載の方法。
- 前記楕円断面を円形断面に変換することをさらに含む、請求項10に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161510633P | 2011-07-22 | 2011-07-22 | |
US61/510,633 | 2011-07-22 | ||
US13/412,564 US8873596B2 (en) | 2011-07-22 | 2012-03-05 | Laser with high quality, stable output beam, and long life high conversion efficiency non-linear crystal |
US13/412,564 | 2012-03-05 | ||
PCT/US2012/044661 WO2013015940A2 (en) | 2011-07-22 | 2012-06-28 | Laser with high quality, stable output beam, and long life high conversion efficiency non-linear crystal |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016257173A Division JP6254673B2 (ja) | 2011-07-22 | 2016-12-29 | 高品質で安定した出力ビーム、および長寿命高変換効率の非線形結晶を備えたレーザ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014523551A JP2014523551A (ja) | 2014-09-11 |
JP6073020B2 true JP6073020B2 (ja) | 2017-02-01 |
Family
ID=47555563
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014522837A Active JP6073020B2 (ja) | 2011-07-22 | 2012-06-28 | 高品質で安定した出力ビーム、および長寿命高変換効率の非線形結晶を備えたレーザ |
JP2016257173A Active JP6254673B2 (ja) | 2011-07-22 | 2016-12-29 | 高品質で安定した出力ビーム、および長寿命高変換効率の非線形結晶を備えたレーザ |
JP2017229902A Active JP6546979B2 (ja) | 2011-07-22 | 2017-11-30 | 周波数変換結晶アニール方法 |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016257173A Active JP6254673B2 (ja) | 2011-07-22 | 2016-12-29 | 高品質で安定した出力ビーム、および長寿命高変換効率の非線形結晶を備えたレーザ |
JP2017229902A Active JP6546979B2 (ja) | 2011-07-22 | 2017-11-30 | 周波数変換結晶アニール方法 |
Country Status (7)
Country | Link |
---|---|
US (3) | US8873596B2 (ja) |
EP (1) | EP2742570B1 (ja) |
JP (3) | JP6073020B2 (ja) |
KR (3) | KR102028102B1 (ja) |
CN (3) | CN103782458B (ja) |
TW (2) | TWI606291B (ja) |
WO (1) | WO2013015940A2 (ja) |
Families Citing this family (53)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9793673B2 (en) | 2011-06-13 | 2017-10-17 | Kla-Tencor Corporation | Semiconductor inspection and metrology system using laser pulse multiplier |
US8873596B2 (en) | 2011-07-22 | 2014-10-28 | Kla-Tencor Corporation | Laser with high quality, stable output beam, and long life high conversion efficiency non-linear crystal |
US9250178B2 (en) | 2011-10-07 | 2016-02-02 | Kla-Tencor Corporation | Passivation of nonlinear optical crystals |
US9496425B2 (en) | 2012-04-10 | 2016-11-15 | Kla-Tencor Corporation | Back-illuminated sensor with boron layer |
US9042006B2 (en) | 2012-09-11 | 2015-05-26 | Kla-Tencor Corporation | Solid state illumination source and inspection system |
US9151940B2 (en) | 2012-12-05 | 2015-10-06 | Kla-Tencor Corporation | Semiconductor inspection and metrology system using laser pulse multiplier |
US8929406B2 (en) | 2013-01-24 | 2015-01-06 | Kla-Tencor Corporation | 193NM laser and inspection system |
US9529182B2 (en) | 2013-02-13 | 2016-12-27 | KLA—Tencor Corporation | 193nm laser and inspection system |
US9608399B2 (en) | 2013-03-18 | 2017-03-28 | Kla-Tencor Corporation | 193 nm laser and an inspection system using a 193 nm laser |
US9478402B2 (en) | 2013-04-01 | 2016-10-25 | Kla-Tencor Corporation | Photomultiplier tube, image sensor, and an inspection system using a PMT or image sensor |
US11180866B2 (en) * | 2013-04-10 | 2021-11-23 | Kla Corporation | Passivation of nonlinear optical crystals |
US9293882B2 (en) | 2013-09-10 | 2016-03-22 | Kla-Tencor Corporation | Low noise, high stability, deep ultra-violet, continuous wave laser |
US9310664B2 (en) | 2013-12-20 | 2016-04-12 | Sharp Kabushiki Kaisha | Frequency-converted light source |
US9410901B2 (en) | 2014-03-17 | 2016-08-09 | Kla-Tencor Corporation | Image sensor, an inspection system and a method of inspecting an article |
US9804101B2 (en) | 2014-03-20 | 2017-10-31 | Kla-Tencor Corporation | System and method for reducing the bandwidth of a laser and an inspection system and method using a laser |
US9429813B2 (en) * | 2014-05-15 | 2016-08-30 | Oxide Corporation | Deep ultraviolet laser generation device and light source device |
US9525265B2 (en) | 2014-06-20 | 2016-12-20 | Kla-Tencor Corporation | Laser repetition rate multiplier and flat-top beam profile generators using mirrors and/or prisms |
US9419407B2 (en) | 2014-09-25 | 2016-08-16 | Kla-Tencor Corporation | Laser assembly and inspection system using monolithic bandwidth narrowing apparatus |
US9748729B2 (en) | 2014-10-03 | 2017-08-29 | Kla-Tencor Corporation | 183NM laser and inspection system |
KR101620594B1 (ko) * | 2014-10-30 | 2016-05-24 | 한국생산기술연구원 | 다기능 분광장치 |
JP2016133473A (ja) * | 2015-01-22 | 2016-07-25 | 株式会社トプコン | 光学分析装置 |
US10185303B2 (en) | 2015-02-21 | 2019-01-22 | Kla-Tencor Corporation | Optimizing computational efficiency by multiple truncation of spatial harmonics |
US9860466B2 (en) | 2015-05-14 | 2018-01-02 | Kla-Tencor Corporation | Sensor with electrically controllable aperture for inspection and metrology systems |
US10748730B2 (en) | 2015-05-21 | 2020-08-18 | Kla-Tencor Corporation | Photocathode including field emitter array on a silicon substrate with boron layer |
US10887974B2 (en) * | 2015-06-22 | 2021-01-05 | Kla Corporation | High efficiency laser-sustained plasma light source |
US10042324B2 (en) * | 2015-06-30 | 2018-08-07 | Synaptics Incorporated | Optical fingerprint imaging using holography |
US9841655B2 (en) | 2015-07-01 | 2017-12-12 | Kla-Tencor Corporation | Power scalable nonlinear optical wavelength converter |
WO2017005758A1 (en) | 2015-07-09 | 2017-01-12 | Koninklijke Philips N.V. | Radiation therapy system using plural treatment plans |
US10462391B2 (en) | 2015-08-14 | 2019-10-29 | Kla-Tencor Corporation | Dark-field inspection using a low-noise sensor |
US10494290B2 (en) * | 2016-01-14 | 2019-12-03 | Corning Incorporated | Dual-airy-beam systems and methods for processing glass substrates |
US10313622B2 (en) | 2016-04-06 | 2019-06-04 | Kla-Tencor Corporation | Dual-column-parallel CCD sensor and inspection systems using a sensor |
US10778925B2 (en) | 2016-04-06 | 2020-09-15 | Kla-Tencor Corporation | Multiple column per channel CCD sensor architecture for inspection and metrology |
US10153215B2 (en) | 2016-08-04 | 2018-12-11 | Kla-Tencor Corporation | Oven enclosure for optical components with integrated purge gas pre-heater |
US10324045B2 (en) * | 2016-08-05 | 2019-06-18 | Kla-Tencor Corporation | Surface defect inspection with large particle monitoring and laser power control |
US10775323B2 (en) * | 2016-10-18 | 2020-09-15 | Kla-Tencor Corporation | Full beam metrology for X-ray scatterometry systems |
CN106770311B (zh) * | 2016-11-22 | 2019-05-07 | 山东大学 | 一种晶体激光预处理与点对点损伤测试装置及测试方法 |
RU2019120098A (ru) * | 2016-12-29 | 2021-01-29 | Айпиджи Фотоникс Корпорэйшн | Высокотемпературная оптическая молекулярная геттерная система, предохраняющая от загрязнений |
US10175555B2 (en) | 2017-01-03 | 2019-01-08 | KLA—Tencor Corporation | 183 nm CW laser and inspection system |
TWI626432B (zh) * | 2017-06-15 | 2018-06-11 | 明新科技大學 | 光束品質量測裝置 |
US11156548B2 (en) * | 2017-12-08 | 2021-10-26 | Kla-Tencor Corporation | Measurement methodology of advanced nanostructures |
DE102018001667B4 (de) | 2018-03-04 | 2023-09-28 | Edgewave Gmbh | Anordnungen zur Erzeugung von frequenzkonvertierten Strahlen mit Top-hat-Intensitätsprofil |
CN118068655A (zh) * | 2018-06-13 | 2024-05-24 | Asml荷兰有限公司 | 量测设备 |
US11114489B2 (en) | 2018-06-18 | 2021-09-07 | Kla-Tencor Corporation | Back-illuminated sensor and a method of manufacturing a sensor |
US10943760B2 (en) | 2018-10-12 | 2021-03-09 | Kla Corporation | Electron gun and electron microscope |
US11114491B2 (en) | 2018-12-12 | 2021-09-07 | Kla Corporation | Back-illuminated sensor and a method of manufacturing a sensor |
JP2020140822A (ja) * | 2019-02-27 | 2020-09-03 | 株式会社小糸製作所 | 車両用灯具 |
JP7247077B2 (ja) * | 2019-11-21 | 2023-03-28 | 株式会社東芝 | 受信用レーザ光受信装置、レーザ超音波計測装置およびレーザ超音波計測方法 |
WO2021151076A1 (en) * | 2020-01-24 | 2021-07-29 | Deuve Photonics, Inc. | Laser system for harmonic generation without intracavity astigmatism |
US11848350B2 (en) | 2020-04-08 | 2023-12-19 | Kla Corporation | Back-illuminated sensor and a method of manufacturing a sensor using a silicon on insulator wafer |
US11644419B2 (en) | 2021-01-28 | 2023-05-09 | Kla Corporation | Measurement of properties of patterned photoresist |
US20230034635A1 (en) | 2021-07-30 | 2023-02-02 | Kla Corporation | Protective coating for nonlinear optical crystal |
CN114509242B (zh) * | 2022-02-18 | 2024-05-14 | 重庆邮电大学 | 一种测量激光晶体热透镜焦距方法及装置 |
CN115963443B (zh) * | 2023-03-13 | 2023-06-16 | 国网江西省电力有限公司电力科学研究院 | 一种全光纤电流互感器异常处理方法及系统 |
Family Cites Families (179)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4178561A (en) | 1978-10-02 | 1979-12-11 | Hughes Aircraft Company | Scanning arrangements for optical frequency converters |
JPS58146B2 (ja) | 1980-10-14 | 1983-01-05 | 浜松テレビ株式会社 | フレ−ミング管 |
JPH01128484A (ja) * | 1987-11-12 | 1989-05-22 | Asukaru:Kk | 高効率第二高調波発生レーザ発振器 |
CH681495A5 (ja) | 1990-03-05 | 1993-03-31 | Tet Techno Investment Trust | |
TW207588B (ja) * | 1990-09-19 | 1993-06-11 | Hitachi Seisakusyo Kk | |
US5120949A (en) | 1991-01-17 | 1992-06-09 | Burle Technologies, Inc. | Semiconductor anode photomultiplier tube |
JP2828221B2 (ja) * | 1991-06-04 | 1998-11-25 | インターナショナル・ビジネス・マシーンズ・コーポレイション | レーザー光波長変換装置 |
US5377002A (en) | 1991-07-20 | 1994-12-27 | Tet Techno Trust Investment Settlement | Apparatus for surface inspections |
US5377001A (en) | 1991-07-20 | 1994-12-27 | Tet Techno Trust Investment Settlement | Apparatus for surface inspection |
US5189481A (en) | 1991-07-26 | 1993-02-23 | Tencor Instruments | Particle detector for rough surfaces |
US5144630A (en) * | 1991-07-29 | 1992-09-01 | Jtt International, Inc. | Multiwavelength solid state laser using frequency conversion techniques |
US5563702A (en) | 1991-08-22 | 1996-10-08 | Kla Instruments Corporation | Automated photomask inspection apparatus and method |
DE69208413T2 (de) | 1991-08-22 | 1996-11-14 | Kla Instr Corp | Gerät zur automatischen Prüfung von Photomaske |
EP0532927B1 (en) | 1991-08-22 | 1996-02-21 | Kla Instruments Corporation | Automated photomask inspection apparatus |
CN1032072C (zh) * | 1992-11-04 | 1996-06-19 | 中国科学院福建物质结构研究所 | 用改进的熔盐籽晶法生长低温相偏硼酸钡单晶 |
US5475227A (en) | 1992-12-17 | 1995-12-12 | Intevac, Inc. | Hybrid photomultiplier tube with ion deflector |
US5326978A (en) | 1992-12-17 | 1994-07-05 | Intevac, Inc. | Focused electron-bombarded detector |
FI940740A0 (fi) | 1994-02-17 | 1994-02-17 | Arto Salokatve | Detektor foer paovisning av fotoner eller partiklar, foerfarande foer framstaellning av detektorn och maetningsfoerfarande |
US6271916B1 (en) | 1994-03-24 | 2001-08-07 | Kla-Tencor Corporation | Process and assembly for non-destructive surface inspections |
US5493176A (en) | 1994-05-23 | 1996-02-20 | Siemens Medical Systems, Inc. | Photomultiplier tube with an avalanche photodiode, a flat input end and conductors which simulate the potential distribution in a photomultiplier tube having a spherical-type input end |
US6118525A (en) | 1995-03-06 | 2000-09-12 | Ade Optical Systems Corporation | Wafer inspection system for distinguishing pits and particles |
US5712701A (en) | 1995-03-06 | 1998-01-27 | Ade Optical Systems Corporation | Surface inspection system and method of inspecting surface of workpiece |
CN1305184C (zh) * | 1995-06-02 | 2007-03-14 | 松下电器产业株式会社 | 激光装置 |
US6512631B2 (en) | 1996-07-22 | 2003-01-28 | Kla-Tencor Corporation | Broad-band deep ultraviolet/vacuum ultraviolet catadioptric imaging system |
US5998313A (en) * | 1996-01-26 | 1999-12-07 | Japan Science And Technology Corporation | Cesium-lithium borate crystal |
US6002695A (en) * | 1996-05-31 | 1999-12-14 | Dpss Lasers, Inc. | High efficiency high repetition rate, intra-cavity tripled diode pumped solid state laser |
US5999310A (en) | 1996-07-22 | 1999-12-07 | Shafer; David Ross | Ultra-broadband UV microscope imaging system with wide range zoom capability |
US5742626A (en) | 1996-08-14 | 1998-04-21 | Aculight Corporation | Ultraviolet solid state laser, method of using same and laser surgery apparatus |
US5760899A (en) | 1996-09-04 | 1998-06-02 | Erim International, Inc. | High-sensitivity multispectral sensor |
US6212310B1 (en) | 1996-10-22 | 2001-04-03 | Sdl, Inc. | High power fiber gain media system achieved through power scaling via multiplexing |
AT1859U1 (de) * | 1996-11-29 | 1997-12-29 | Stingl Andreas Dipl Ing | Kurzpuls-laservorrichtung |
WO2005022705A2 (en) | 1997-03-21 | 2005-03-10 | Imra America, Inc. | High energy optical fiber amplifier for picosecond-nanosecond pulses for advanced material processing applications |
US6608676B1 (en) | 1997-08-01 | 2003-08-19 | Kla-Tencor Corporation | System for detecting anomalies and/or features of a surface |
US5825562A (en) | 1997-08-18 | 1998-10-20 | Novatec Corporation | Method of continuous motion for prolong usage of optical elements under the irradiation of intensive laser beams |
US6201601B1 (en) | 1997-09-19 | 2001-03-13 | Kla-Tencor Corporation | Sample inspection system |
US6956644B2 (en) * | 1997-09-19 | 2005-10-18 | Kla-Tencor Technologies Corporation | Systems and methods for a wafer inspection system using multiple angles and multiple wavelength illumination |
KR100841147B1 (ko) | 1998-03-11 | 2008-06-24 | 가부시키가이샤 니콘 | 레이저 장치, 자외광 조사 장치 및 방법, 물체의 패턴 검출장치 및 방법 |
JP3997450B2 (ja) | 1998-03-13 | 2007-10-24 | ソニー株式会社 | 波長変換装置 |
US6002697A (en) * | 1998-04-03 | 1999-12-14 | Lambda Physik Gmbh | Diode pumped laser with frequency conversion into UV and DUV range |
US6373869B1 (en) | 1998-07-30 | 2002-04-16 | Actinix | System and method for generating coherent radiation at ultraviolet wavelengths |
US6888855B1 (en) * | 1999-06-11 | 2005-05-03 | Daniel Kopf | Optical system for lasers |
DE60004237T2 (de) | 1999-06-11 | 2004-04-15 | Daniel Dr. Kopf | LASER-Generatorsystem |
JP2001042369A (ja) * | 1999-07-27 | 2001-02-16 | Ushio Sogo Gijutsu Kenkyusho:Kk | 波長変換ユニット |
US6498801B1 (en) | 1999-08-05 | 2002-12-24 | Alexander E. Dudelzak | Solid state laser for microlithography |
AU6875100A (en) | 1999-09-10 | 2001-04-17 | Nikon Corporation | Laser device and exposure method |
AU6865300A (en) | 1999-09-10 | 2001-04-17 | Nikon Corporation | Light source and wavelength stabilization control method, exposure apparatus andexposure method, method for producing exposure apparatus, and device manufactur ing method and device |
US6369888B1 (en) | 1999-11-17 | 2002-04-09 | Applied Materials, Inc. | Method and apparatus for article inspection including speckle reduction |
US7838794B2 (en) | 1999-12-28 | 2010-11-23 | Gsi Group Corporation | Laser-based method and system for removing one or more target link structures |
US6549647B1 (en) | 2000-01-07 | 2003-04-15 | Cyberoptics Corporation | Inspection system with vibration resistant video capture |
JP4032162B2 (ja) * | 2000-04-25 | 2008-01-16 | Jfeスチール株式会社 | 方向性電磁鋼板およびその製造方法 |
US6879390B1 (en) | 2000-08-10 | 2005-04-12 | Kla-Tencor Technologies Corporation | Multiple beam inspection apparatus and method |
US6650819B1 (en) * | 2000-10-20 | 2003-11-18 | Konstantin P. Petrov | Methods for forming separately optimized waveguide structures in optical materials |
US7184616B2 (en) | 2000-11-20 | 2007-02-27 | Aculight Corporation | Method and apparatus for fiber Bragg grating production |
US8208505B2 (en) | 2001-01-30 | 2012-06-26 | Board Of Trustees Of Michigan State University | Laser system employing harmonic generation |
US6791099B2 (en) | 2001-02-14 | 2004-09-14 | Applied Materials, Inc. | Laser scanning wafer inspection using nonlinear optical phenomena |
JP3939928B2 (ja) | 2001-02-28 | 2007-07-04 | サイバーレーザー株式会社 | 波長変換装置 |
JP2003043533A (ja) * | 2001-08-03 | 2003-02-13 | Kitakyushu Foundation For The Advancement Of Industry Science & Technology | レーザーの第二高調波の方向を一定に保つための自動追尾装置 |
US20030161374A1 (en) | 2001-11-21 | 2003-08-28 | Lambda Physik Ag | High-resolution confocal Fabry-Perot interferometer for absolute spectral parameter detection of excimer laser used in lithography applications |
US6816520B1 (en) | 2001-11-30 | 2004-11-09 | Positive Light | Solid state system and method for generating ultraviolet light |
US7088443B2 (en) | 2002-02-11 | 2006-08-08 | Kla-Tencor Technologies Corporation | System for detecting anomalies and/or features of a surface |
US7130039B2 (en) | 2002-04-18 | 2006-10-31 | Kla-Tencor Technologies Corporation | Simultaneous multi-spot inspection and imaging |
US6859335B1 (en) | 2002-11-20 | 2005-02-22 | Ming Lai | Method of programmed displacement for prolong usage of optical elements under the irradiation of intensive laser beams |
CN100362144C (zh) * | 2003-02-13 | 2008-01-16 | 独立行政法人科学技术振兴机构 | 硼酸盐系结晶的制造方法和激光振荡器 |
US7957066B2 (en) | 2003-02-21 | 2011-06-07 | Kla-Tencor Corporation | Split field inspection system using small catadioptric objectives |
WO2004079058A1 (en) * | 2003-02-28 | 2004-09-16 | Saint-Gobain Ceramics & Plastics Inc. | Annealing method for halide crystal |
JP4784930B2 (ja) | 2003-09-11 | 2011-10-05 | 株式会社ニコン | 高分子結晶の加工方法、高分子結晶の加工装置、及び高分子結晶の観察装置 |
US7463657B2 (en) | 2003-10-09 | 2008-12-09 | Coherent, Inc. | Intracavity frequency-tripled CW laser |
US7813406B1 (en) | 2003-10-15 | 2010-10-12 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Temporal laser pulse manipulation using multiple optical ring-cavities |
JP2005156516A (ja) | 2003-11-05 | 2005-06-16 | Hitachi Ltd | パターン欠陥検査方法及びその装置 |
US7288150B2 (en) * | 2003-12-19 | 2007-10-30 | Agfa Gevaert | Homogeneous incorporation of activator element in a storage phosphor |
TWI232965B (en) * | 2003-12-23 | 2005-05-21 | Univ Tsinghua | A high-efficiency multiple-pass nonlinear optical frequency converter and amplitude modulator with a built-in electro-optic phase compensator |
US20050157382A1 (en) | 2004-01-07 | 2005-07-21 | Kafka James D. | Industrial directly diode-pumped ultrafast amplifier system |
US7313155B1 (en) * | 2004-02-12 | 2007-12-25 | Liyue Mu | High power Q-switched laser for soft tissue ablation |
WO2005085947A1 (ja) | 2004-03-08 | 2005-09-15 | Nikon Corporation | レーザ光源装置、このレーザ光源装置を用いた露光装置及びマスク検査装置 |
US7715451B2 (en) | 2004-03-31 | 2010-05-11 | Customvis Plc | Housing for harmonic generation crystals in solid state laser systems |
JP4365255B2 (ja) | 2004-04-08 | 2009-11-18 | 浜松ホトニクス株式会社 | 発光体と、これを用いた電子線検出器、走査型電子顕微鏡及び質量分析装置 |
US20050254065A1 (en) | 2004-05-12 | 2005-11-17 | Stokowski Stanley E | Method and apparatus for detecting surface characteristics on a mask blank |
JP2005326522A (ja) * | 2004-05-13 | 2005-11-24 | Nikon Corp | 偏光ビームスプリッタ、光分離装置、露光装置、レーザ装置、マスク検査装置、及び高分子結晶の加工装置 |
US7349079B2 (en) | 2004-05-14 | 2008-03-25 | Kla-Tencor Technologies Corp. | Methods for measurement or analysis of a nitrogen concentration of a specimen |
WO2005116751A1 (ja) | 2004-05-26 | 2005-12-08 | Nikon Corporation | 波長変換光学系、レーザ光源、露光装置、マスク検査装置、及び高分子結晶の加工装置 |
JP2006060162A (ja) | 2004-08-24 | 2006-03-02 | Nikon Corp | レーザ光源装置の励起光の制御方法及びレーザ光源装置 |
US7627007B1 (en) | 2004-08-25 | 2009-12-01 | Kla-Tencor Technologies Corporation | Non-critical phase matching in CLBO to generate sub-213nm wavelengths |
JP2006071855A (ja) * | 2004-09-01 | 2006-03-16 | Sumitomo Heavy Ind Ltd | 光学装置 |
JP2006250845A (ja) | 2005-03-14 | 2006-09-21 | Topcon Corp | パターン欠陥検査方法とその装置 |
US7593440B2 (en) | 2005-03-29 | 2009-09-22 | Coherent, Inc. | MOPA laser apparatus with two master oscillators for generating ultraviolet radiation |
EP1716964B1 (en) | 2005-04-28 | 2009-01-21 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device and laser irradiation apparatus |
US7345825B2 (en) | 2005-06-30 | 2008-03-18 | Kla-Tencor Technologies Corporation | Beam delivery system for laser dark-field illumination in a catadioptric optical system |
JP4640029B2 (ja) | 2005-08-08 | 2011-03-02 | 株式会社ニコン | 波長変換光学系、レーザ光源、露光装置、被検物検査装置、及び高分子結晶の加工装置 |
US7535938B2 (en) | 2005-08-15 | 2009-05-19 | Pavilion Integration Corporation | Low-noise monolithic microchip lasers capable of producing wavelengths ranging from IR to UV based on efficient and cost-effective frequency conversion |
US7864425B2 (en) | 2005-09-16 | 2011-01-04 | Panasonic Corporation | Composite material and optical component using the same |
JP4925085B2 (ja) | 2005-09-20 | 2012-04-25 | 株式会社メガオプト | 深紫外レーザー光の発生方法および深紫外レーザー装置 |
KR101238739B1 (ko) | 2005-11-01 | 2013-03-04 | 사이머 인코포레이티드 | 레이저 시스템 |
US7920616B2 (en) | 2005-11-01 | 2011-04-05 | Cymer, Inc. | Laser system |
US7643529B2 (en) | 2005-11-01 | 2010-01-05 | Cymer, Inc. | Laser system |
US7715459B2 (en) | 2005-11-01 | 2010-05-11 | Cymer, Inc. | Laser system |
US20090296755A1 (en) | 2005-11-01 | 2009-12-03 | Cymer, Inc. | Laser system |
US7471705B2 (en) | 2005-11-09 | 2008-12-30 | Lockheed Martin Corporation | Ultraviolet laser system and method having wavelength in the 200-nm range |
JP2007133102A (ja) | 2005-11-09 | 2007-05-31 | Canon Inc | 反射防止膜を有する光学素子及びそれを有する露光装置 |
US7519253B2 (en) | 2005-11-18 | 2009-04-14 | Omni Sciences, Inc. | Broadband or mid-infrared fiber light sources |
US7528943B2 (en) | 2005-12-27 | 2009-05-05 | Kla-Tencor Technologies Corporation | Method and apparatus for simultaneous high-speed acquisition of multiple images |
JP2007206452A (ja) | 2006-02-02 | 2007-08-16 | Lasertec Corp | 深紫外光源及び、その深紫外光源を用いたマスク検査装置及び露光装置 |
JP4911494B2 (ja) * | 2006-03-18 | 2012-04-04 | 国立大学法人大阪大学 | 波長変換光学素子、波長変換光学素子の製造方法、波長変換装置、紫外線レーザ照射装置およびレーザ加工装置 |
EP2013951A4 (en) | 2006-04-28 | 2011-08-03 | Corning Inc | PULSED RAMAN LASER SYSTEMS IN ULTRAVIOLET AND VISIBLE LIGHT |
US7113325B1 (en) * | 2006-05-03 | 2006-09-26 | Mitsubishi Materials Corporation | Wavelength conversion method with improved conversion efficiency |
US7593437B2 (en) | 2006-05-15 | 2009-09-22 | Coherent, Inc. | MOPA laser apparatus with two master oscillators for generating ultraviolet radiation |
US20070263680A1 (en) | 2006-05-15 | 2007-11-15 | Andrei Starodoumov | MOPA laser apparatus with two master oscillators for generating ultraviolet radiation |
JP2009540538A (ja) | 2006-06-02 | 2009-11-19 | コーニング インコーポレイテッド | Uv及び可視レーザシステム |
US7457330B2 (en) | 2006-06-15 | 2008-11-25 | Pavilion Integration Corporation | Low speckle noise monolithic microchip RGB lasers |
US7970201B2 (en) | 2006-07-31 | 2011-06-28 | Applied Materials Israel, Ltd. | Method and system for defect detection |
DE102007004235B3 (de) | 2006-12-21 | 2008-01-03 | Coherent Gmbh | Verfahren zur Frequenzkonversion eines Lichtstrahls mittels eines CLBO-Kristalls |
JP5342769B2 (ja) | 2006-12-28 | 2013-11-13 | 浜松ホトニクス株式会社 | 光電陰極、電子管及び光電子増倍管 |
CN107059116B (zh) * | 2007-01-17 | 2019-12-31 | 晶体公司 | 引晶的氮化铝晶体生长中的缺陷减少 |
US9771666B2 (en) * | 2007-01-17 | 2017-09-26 | Crystal Is, Inc. | Defect reduction in seeded aluminum nitride crystal growth |
JP4224863B2 (ja) | 2007-02-02 | 2009-02-18 | レーザーテック株式会社 | 検査装置及び検査方法、並びにパターン基板の製造方法 |
JP2008209664A (ja) | 2007-02-27 | 2008-09-11 | Advanced Mask Inspection Technology Kk | パターン検査装置 |
JP5290958B2 (ja) * | 2007-03-22 | 2013-09-18 | パナソニック株式会社 | レーザ波長変換装置 |
JP2008261790A (ja) | 2007-04-13 | 2008-10-30 | Hitachi High-Technologies Corp | 欠陥検査装置 |
US8755417B1 (en) | 2007-04-16 | 2014-06-17 | Kla-Tencor Corporation | Coherent light generation below about two-hundred nanometers |
US20110073982A1 (en) | 2007-05-25 | 2011-03-31 | Armstrong J Joseph | Inspection system using back side illuminated linear sensor |
US8665536B2 (en) | 2007-06-19 | 2014-03-04 | Kla-Tencor Corporation | External beam delivery system for laser dark-field illumination in a catadioptric optical system |
US7999342B2 (en) | 2007-09-24 | 2011-08-16 | Taiwan Semiconductor Manufacturing Company, Ltd | Image sensor element for backside-illuminated sensor |
JP4634427B2 (ja) | 2007-09-27 | 2011-02-16 | 株式会社東芝 | 照明装置及びパターン検査装置 |
US7525649B1 (en) | 2007-10-19 | 2009-04-28 | Kla-Tencor Technologies Corporation | Surface inspection system using laser line illumination with two dimensional imaging |
US8298335B2 (en) | 2007-12-18 | 2012-10-30 | Kla-Tencor Technologies Corporation | Enclosure for controlling the environment of optical crystals |
JP2009145791A (ja) | 2007-12-18 | 2009-07-02 | Lasertec Corp | 波長変換装置、検査装置及び波長変換方法 |
US7885298B2 (en) | 2008-01-16 | 2011-02-08 | Deep Photonics Corporation | Method and apparatus for producing arbitrary pulsetrains from a harmonic fiber laser |
CN101514489B (zh) * | 2008-02-22 | 2012-03-07 | 中国科学院理化技术研究所 | 含稀土离子的氟硼酸盐、晶体及晶体的生长方法和用途 |
WO2009154731A2 (en) | 2008-06-17 | 2009-12-23 | Kla-Tencor Corporation | External beam delivery system using catadioptric objective with aspheric surfaces |
JP2010054547A (ja) | 2008-08-26 | 2010-03-11 | Lasertec Corp | 紫外レーザ装置 |
US9080991B2 (en) | 2008-09-29 | 2015-07-14 | Kla-Tencor Corp. | Illuminating a specimen for metrology or inspection |
WO2010037106A2 (en) | 2008-09-29 | 2010-04-01 | Kla-Tencor Corporation | Illumination subsystems of a metrology system, metrology systems, and methods for illuminating a specimen for metrology measurements |
FR2938935B1 (fr) | 2008-11-21 | 2011-05-06 | Eolite Systems | Dispositif d'allongement de la duree de vie d'un systeme optique non lineaire soumis au rayonnement d'un faisceau laser intense et source optique non lineaire comprenant ce dispositif |
US8146498B2 (en) | 2008-12-03 | 2012-04-03 | Eastman Kodak Company | Printing plate registration |
US8624971B2 (en) | 2009-01-23 | 2014-01-07 | Kla-Tencor Corporation | TDI sensor modules with localized driving and signal processing circuitry for high speed inspection |
JP5237874B2 (ja) | 2009-04-24 | 2013-07-17 | 株式会社日立ハイテクノロジーズ | 欠陥検査方法および欠陥検査装置 |
JP4565207B1 (ja) | 2009-04-28 | 2010-10-20 | レーザーテック株式会社 | 波長変換装置及び波長変換方法並びに半導体装置の製造方法 |
US20100278200A1 (en) * | 2009-05-04 | 2010-11-04 | Coherent, Inc. | External frequency-quadruped 1064 nm mode-locked laser |
CN101572380B (zh) * | 2009-06-03 | 2010-11-17 | 南京大学 | 2.12微米锁模激光器 |
JP2011023532A (ja) | 2009-07-15 | 2011-02-03 | Nikon Corp | 光増幅器、レーザ装置及び光源装置 |
US9023152B2 (en) | 2009-09-17 | 2015-05-05 | Kla-Tencor Corporation | CLBO crystal growth |
US8798104B2 (en) | 2009-10-13 | 2014-08-05 | Nanda Nathan | Pulsed high-power laser apparatus and methods |
US8629384B1 (en) | 2009-10-26 | 2014-01-14 | Kla-Tencor Corporation | Photomultiplier tube optimized for surface inspection in the ultraviolet |
CN101702490B (zh) | 2009-10-29 | 2011-02-09 | 长春理工大学 | 一种采用阱中量子点(dwell)的中红外锑化物激光器结构 |
US8189981B2 (en) | 2009-11-23 | 2012-05-29 | The Aerospace Corporation | Stable lithium niobate waveguides, and methods of making and using same |
DE102009047098A1 (de) * | 2009-11-25 | 2011-05-26 | Carl Zeiss Smt Gmbh | Optische Anordnung zur Homogenisierung eines Laserpulses |
US20110134944A1 (en) | 2009-12-08 | 2011-06-09 | The Arizona Board Of Regents On Behalf Of The University Of Arizona | Efficient pulse laser light generation and devices using the same |
JP2011128330A (ja) | 2009-12-17 | 2011-06-30 | Nikon Corp | レーザ装置 |
CN101768780A (zh) * | 2010-02-11 | 2010-07-07 | 燕山大学 | 铟铈铁三掺铌酸锂晶体及其制备方法 |
JP4590578B1 (ja) | 2010-04-01 | 2010-12-01 | レーザーテック株式会社 | 光源装置、マスク検査装置、及びコヒーレント光発生方法 |
WO2011148895A1 (ja) | 2010-05-24 | 2011-12-01 | ギガフォトン株式会社 | 固体レーザ装置およびレーザシステム |
US8686331B2 (en) | 2010-08-08 | 2014-04-01 | Kla-Tencor Corporation | Dynamic wavefront control of a frequency converted laser system |
US8482846B2 (en) | 2010-08-09 | 2013-07-09 | Coherent Gmbh | Advanced shifting algorithm for prolonging the life of an optically nonlinear crystal |
CN101962810B (zh) * | 2010-09-27 | 2012-10-17 | 山东大学 | 一种LiGa3Te5单晶体及其制备方法和应用 |
US8824514B2 (en) | 2010-11-09 | 2014-09-02 | Kla-Tencor Corporation | Measuring crystal site lifetime in a non-linear optical crystal |
US8711470B2 (en) | 2010-11-14 | 2014-04-29 | Kla-Tencor Corporation | High damage threshold frequency conversion system |
WO2012154468A2 (en) | 2011-05-06 | 2012-11-15 | Kla-Tencor Corporation | Deep ultra-violet light sources for wafer and reticle inspection systems |
US9793673B2 (en) | 2011-06-13 | 2017-10-17 | Kla-Tencor Corporation | Semiconductor inspection and metrology system using laser pulse multiplier |
US9279774B2 (en) | 2011-07-12 | 2016-03-08 | Kla-Tencor Corp. | Wafer inspection |
US8873596B2 (en) | 2011-07-22 | 2014-10-28 | Kla-Tencor Corporation | Laser with high quality, stable output beam, and long life high conversion efficiency non-linear crystal |
US8817827B2 (en) | 2011-08-17 | 2014-08-26 | Veralas, Inc. | Ultraviolet fiber laser system |
US8748828B2 (en) | 2011-09-21 | 2014-06-10 | Kla-Tencor Corporation | Interposer based imaging sensor for high-speed image acquisition and inspection systems |
US20130077086A1 (en) | 2011-09-23 | 2013-03-28 | Kla-Tencor Corporation | Solid-State Laser And Inspection System Using 193nm Laser |
US9250178B2 (en) * | 2011-10-07 | 2016-02-02 | Kla-Tencor Corporation | Passivation of nonlinear optical crystals |
US8754972B2 (en) | 2012-02-01 | 2014-06-17 | Kla-Tencor Corporation | Integrated multi-channel analog front end and digitizer for high speed imaging applications |
US9496425B2 (en) | 2012-04-10 | 2016-11-15 | Kla-Tencor Corporation | Back-illuminated sensor with boron layer |
US20130313440A1 (en) | 2012-05-22 | 2013-11-28 | Kla-Tencor Corporation | Solid-State Laser And Inspection System Using 193nm Laser |
US8976343B2 (en) | 2012-06-21 | 2015-03-10 | Kla-Tencor Corporation | Laser crystal degradation compensation |
US8964798B2 (en) | 2012-07-12 | 2015-02-24 | Kla-Tencor Corporation | Reducing the spectral bandwidth of lasers |
US9042006B2 (en) | 2012-09-11 | 2015-05-26 | Kla-Tencor Corporation | Solid state illumination source and inspection system |
NL2011568A (en) | 2012-10-31 | 2014-05-06 | Asml Netherlands Bv | Sensor and lithographic apparatus. |
US9151940B2 (en) | 2012-12-05 | 2015-10-06 | Kla-Tencor Corporation | Semiconductor inspection and metrology system using laser pulse multiplier |
US9426400B2 (en) | 2012-12-10 | 2016-08-23 | Kla-Tencor Corporation | Method and apparatus for high speed acquisition of moving images using pulsed illumination |
US8929406B2 (en) | 2013-01-24 | 2015-01-06 | Kla-Tencor Corporation | 193NM laser and inspection system |
US9529182B2 (en) | 2013-02-13 | 2016-12-27 | KLA—Tencor Corporation | 193nm laser and inspection system |
US9478402B2 (en) | 2013-04-01 | 2016-10-25 | Kla-Tencor Corporation | Photomultiplier tube, image sensor, and an inspection system using a PMT or image sensor |
US11180866B2 (en) | 2013-04-10 | 2021-11-23 | Kla Corporation | Passivation of nonlinear optical crystals |
US9347890B2 (en) | 2013-12-19 | 2016-05-24 | Kla-Tencor Corporation | Low-noise sensor and an inspection system using a low-noise sensor |
US9748294B2 (en) | 2014-01-10 | 2017-08-29 | Hamamatsu Photonics K.K. | Anti-reflection layer for back-illuminated sensor |
US9804101B2 (en) | 2014-03-20 | 2017-10-31 | Kla-Tencor Corporation | System and method for reducing the bandwidth of a laser and an inspection system and method using a laser |
-
2012
- 2012-03-05 US US13/412,564 patent/US8873596B2/en active Active
- 2012-06-28 WO PCT/US2012/044661 patent/WO2013015940A2/en active Application Filing
- 2012-06-28 JP JP2014522837A patent/JP6073020B2/ja active Active
- 2012-06-28 KR KR1020147004506A patent/KR102028102B1/ko active IP Right Grant
- 2012-06-28 EP EP12816820.0A patent/EP2742570B1/en active Active
- 2012-06-28 CN CN201280044059.XA patent/CN103782458B/zh active Active
- 2012-06-28 CN CN201710397661.6A patent/CN107342526B/zh active Active
- 2012-06-28 KR KR1020197004335A patent/KR102050699B1/ko active IP Right Grant
- 2012-06-28 KR KR1020197004336A patent/KR102057427B1/ko active IP Right Grant
- 2012-06-28 CN CN201811389243.3A patent/CN110071410B/zh active Active
- 2012-07-17 TW TW106107276A patent/TWI606291B/zh active
- 2012-07-17 TW TW101125731A patent/TWI582512B/zh active
-
2014
- 2014-10-06 US US14/507,758 patent/US9097683B2/en active Active
-
2015
- 2015-06-29 US US14/753,275 patent/US9413134B2/en active Active
-
2016
- 2016-12-29 JP JP2016257173A patent/JP6254673B2/ja active Active
-
2017
- 2017-11-30 JP JP2017229902A patent/JP6546979B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
TW201312246A (zh) | 2013-03-16 |
US8873596B2 (en) | 2014-10-28 |
JP2014523551A (ja) | 2014-09-11 |
JP2017090467A (ja) | 2017-05-25 |
KR102028102B1 (ko) | 2019-10-04 |
TW201721266A (zh) | 2017-06-16 |
TWI582512B (zh) | 2017-05-11 |
KR20190020347A (ko) | 2019-02-28 |
JP6546979B2 (ja) | 2019-07-17 |
US20150299893A1 (en) | 2015-10-22 |
KR20140049011A (ko) | 2014-04-24 |
CN107342526A (zh) | 2017-11-10 |
JP6254673B2 (ja) | 2017-12-27 |
KR20190020346A (ko) | 2019-02-28 |
US9413134B2 (en) | 2016-08-09 |
EP2742570A4 (en) | 2015-06-03 |
EP2742570A2 (en) | 2014-06-18 |
WO2013015940A3 (en) | 2013-05-10 |
US20150022805A1 (en) | 2015-01-22 |
KR102057427B1 (ko) | 2019-12-19 |
TWI606291B (zh) | 2017-11-21 |
EP2742570B1 (en) | 2018-08-08 |
US9097683B2 (en) | 2015-08-04 |
JP2018041103A (ja) | 2018-03-15 |
WO2013015940A2 (en) | 2013-01-31 |
CN107342526B (zh) | 2018-12-14 |
CN110071410A (zh) | 2019-07-30 |
CN110071410B (zh) | 2022-02-01 |
CN103782458A (zh) | 2014-05-07 |
US20130021602A1 (en) | 2013-01-24 |
KR102050699B1 (ko) | 2019-12-02 |
CN103782458B (zh) | 2017-06-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6254673B2 (ja) | 高品質で安定した出力ビーム、および長寿命高変換効率の非線形結晶を備えたレーザ | |
JP6954980B2 (ja) | 光学検査システム、光学検査方法、及びレーザー | |
JP6775494B2 (ja) | 単体の帯域幅制限装置を使用するレーザー組立体および検査システム | |
JP2014530380A (ja) | 193nmレーザを用いた固体レーザおよび検査システム | |
TW201349688A (zh) | 使用193奈米雷射之固態雷射及檢測系統 | |
JP2016519782A (ja) | 193nmレーザ及び193nmレーザを用いた検査システム | |
JP2017535806A (ja) | 183nmのレーザーおよび検査システム | |
TWI623784B (zh) | 固態照明源及檢查系統 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20150626 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20160325 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160405 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160705 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20161206 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20161229 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6073020 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |