JP6067532B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6067532B2
JP6067532B2 JP2013212623A JP2013212623A JP6067532B2 JP 6067532 B2 JP6067532 B2 JP 6067532B2 JP 2013212623 A JP2013212623 A JP 2013212623A JP 2013212623 A JP2013212623 A JP 2013212623A JP 6067532 B2 JP6067532 B2 JP 6067532B2
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film
insulating film
layer
semiconductor layer
crystal
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Japanese (ja)
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JP2014072533A5 (enrdf_load_stackoverflow
JP2014072533A (ja
Inventor
金子　健太郎
健太郎 金子
俊実 人羅
俊実 人羅
平尾　孝
孝 平尾
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Flosfia Inc
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Flosfia Inc
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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2013212623A 2013-10-10 2013-10-10 半導体装置 Active JP6067532B2 (ja)

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JP2013212623A JP6067532B2 (ja) 2013-10-10 2013-10-10 半導体装置

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JP2013212623A JP6067532B2 (ja) 2013-10-10 2013-10-10 半導体装置

Related Parent Applications (1)

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JP2013131172A Division JP5397795B1 (ja) 2013-06-21 2013-06-21 半導体装置及びその製造方法、結晶及びその製造方法

Related Child Applications (1)

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JP2016247779A Division JP6281145B2 (ja) 2016-12-21 2016-12-21 半導体装置

Publications (3)

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JP2014072533A JP2014072533A (ja) 2014-04-21
JP2014072533A5 JP2014072533A5 (enrdf_load_stackoverflow) 2015-10-08
JP6067532B2 true JP6067532B2 (ja) 2017-01-25

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Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9590050B2 (en) * 2014-05-08 2017-03-07 Flosfia, Inc. Crystalline multilayer structure and semiconductor device
JP6230196B2 (ja) * 2014-07-08 2017-11-15 株式会社Flosfia 結晶性半導体膜および半導体装置
KR102018329B1 (ko) 2014-07-22 2019-09-04 가부시키가이샤 플로스피아 결정성 반도체막 및 판상체 및 반도체장치
JP2016051824A (ja) * 2014-08-29 2016-04-11 高知県公立大学法人 エピタキシャル成長方法および成長装置ならびに量子井戸構造の作製方法
JP6390052B2 (ja) * 2014-08-29 2018-09-19 高知県公立大学法人 量子井戸構造および半導体装置
EP3783662B1 (en) 2014-09-02 2025-03-12 Flosfia Inc. Laminated structure and method for manufacturing same, semiconductor device, and crystalline film
JP6478425B2 (ja) * 2017-07-07 2019-03-06 株式会社Flosfia 結晶性半導体膜および半導体装置
CN109423694B (zh) 2017-08-21 2022-09-09 株式会社Flosfia 结晶膜、包括结晶膜的半导体装置以及制造结晶膜的方法
JPWO2020004250A1 (ja) 2018-06-26 2021-08-05 株式会社Flosfia 結晶性酸化物膜
WO2020004249A1 (ja) 2018-06-26 2020-01-02 株式会社Flosfia 成膜方法および結晶性積層構造体
JP7315137B2 (ja) 2018-12-26 2023-07-26 株式会社Flosfia 結晶性酸化物膜
JP7315136B2 (ja) 2018-12-26 2023-07-26 株式会社Flosfia 結晶性酸化物半導体
WO2020194802A1 (ja) 2019-03-28 2020-10-01 日本碍子株式会社 下地基板及びその製造方法
CN113614292B (zh) * 2019-03-28 2024-08-23 日本碍子株式会社 半导体膜
JP7124207B2 (ja) * 2019-03-28 2022-08-23 日本碍子株式会社 下地基板
CN113677834A (zh) 2019-04-24 2021-11-19 日本碍子株式会社 半导体膜
EP3960914A4 (en) 2019-04-24 2022-12-28 NGK Insulators, Ltd. Semiconductor film
WO2021044489A1 (ja) 2019-09-02 2021-03-11 日本碍子株式会社 半導体膜
WO2021044845A1 (ja) 2019-09-03 2021-03-11 株式会社Flosfia 結晶膜、結晶膜を含む半導体装置、及び結晶膜の製造方法
WO2021048950A1 (ja) 2019-09-11 2021-03-18 日本碍子株式会社 半導体膜
TWI850473B (zh) 2019-09-30 2024-08-01 日商Ｆｌｏｓｆｉａ股份有限公司 積層結構體及半導體裝置
WO2021064795A1 (ja) 2019-09-30 2021-04-08 日本碍子株式会社 α－Ｇａ２Ｏ３系半導体膜
CN114503285A (zh) * 2019-10-03 2022-05-13 株式会社Flosfia 半导体元件
CN114585776B (zh) 2019-11-05 2025-06-03 日本碍子株式会社 氧化镓结晶的制法
KR102777027B1 (ko) 2020-01-27 2025-03-05 가부시키가이샤 플로스피아 반도체 장치 및 반도체 장치의 제조 방법
US11804519B2 (en) 2020-04-24 2023-10-31 Flosfia Inc. Crystalline multilayer structure, semiconductor device, and method of manufacturing crystalline structure
US11694894B2 (en) 2020-04-24 2023-07-04 Flosfia Inc. Crystalline film containing a crystalline metal oxide and method for manufacturing the same under partial pressure
JP7061214B2 (ja) * 2020-08-06 2022-04-27 信越化学工業株式会社 半導体積層体、半導体素子および半導体素子の製造方法
WO2022030114A1 (ja) * 2020-08-06 2022-02-10 信越化学工業株式会社 半導体積層体、半導体素子および半導体素子の製造方法
WO2022075139A1 (ja) 2020-10-08 2022-04-14 日本碍子株式会社 酸化ガリウム単結晶粒子及びその製法
JP7731995B2 (ja) 2021-09-22 2025-09-01 信越化学工業株式会社 成膜方法及び成膜装置
US20240250185A1 (en) 2021-09-30 2024-07-25 Shin-Etsu Chemical Co., Ltd. Laminated structure, semiconductor device, and method of forming crystalline oxide film
CN119278505A (zh) 2022-06-08 2025-01-07 信越化学工业株式会社 成膜方法及成膜装置
US12402381B2 (en) 2022-07-12 2025-08-26 Flosfia, Inc. Semiconductor device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4083396B2 (ja) * 2000-07-10 2008-04-30 独立行政法人科学技術振興機構 紫外透明導電膜とその製造方法
US8569754B2 (en) * 2010-11-05 2013-10-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8809852B2 (en) * 2010-11-30 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor film, semiconductor element, semiconductor device, and method for manufacturing the same

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