JP6047289B2 - 表示装置 - Google Patents

表示装置 Download PDF

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Publication number
JP6047289B2
JP6047289B2 JP2012025917A JP2012025917A JP6047289B2 JP 6047289 B2 JP6047289 B2 JP 6047289B2 JP 2012025917 A JP2012025917 A JP 2012025917A JP 2012025917 A JP2012025917 A JP 2012025917A JP 6047289 B2 JP6047289 B2 JP 6047289B2
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JP
Japan
Prior art keywords
display
light
region
panel
optical shutter
Prior art date
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JP2012025917A
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English (en)
Japanese (ja)
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JP2013020224A5 (enExample
JP2013020224A (ja
Inventor
平形　吉晴
吉晴 平形
小山　潤
潤 小山
山崎　舜平
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2012025917A priority Critical patent/JP6047289B2/ja
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Publication of JP2013020224A5 publication Critical patent/JP2013020224A5/ja
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N13/00—Stereoscopic video systems; Multi-view video systems; Details thereof
    • H04N13/30—Image reproducers
    • H04N13/302—Image reproducers for viewing without the aid of special glasses, i.e. using autostereoscopic displays
    • H04N13/31—Image reproducers for viewing without the aid of special glasses, i.e. using autostereoscopic displays using parallax barriers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B30/00—Optical systems or apparatus for producing three-dimensional [3D] effects, e.g. stereoscopic images
    • G02B30/20—Optical systems or apparatus for producing three-dimensional [3D] effects, e.g. stereoscopic images by providing first and second parallax images to an observer's left and right eyes
    • G02B30/26—Optical systems or apparatus for producing three-dimensional [3D] effects, e.g. stereoscopic images by providing first and second parallax images to an observer's left and right eyes of the autostereoscopic type
    • G02B30/30—Optical systems or apparatus for producing three-dimensional [3D] effects, e.g. stereoscopic images by providing first and second parallax images to an observer's left and right eyes of the autostereoscopic type involving parallax barriers
    • G02B30/31—Optical systems or apparatus for producing three-dimensional [3D] effects, e.g. stereoscopic images by providing first and second parallax images to an observer's left and right eyes of the autostereoscopic type involving parallax barriers involving active parallax barriers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/001—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes using specific devices not provided for in groups G09G3/02 - G09G3/36, e.g. using an intermediate record carrier such as a film slide; Projection systems; Display of non-alphanumerical information, solely or in combination with alphanumerical information, e.g. digital display on projected diapositive as background
    • G09G3/003—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes using specific devices not provided for in groups G09G3/02 - G09G3/36, e.g. using an intermediate record carrier such as a film slide; Projection systems; Display of non-alphanumerical information, solely or in combination with alphanumerical information, e.g. digital display on projected diapositive as background to produce spatial visual effects
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N13/00—Stereoscopic video systems; Multi-view video systems; Details thereof
    • H04N13/30—Image reproducers
    • H04N13/324—Colour aspects
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N13/00—Stereoscopic video systems; Multi-view video systems; Details thereof
    • H04N13/30—Image reproducers
    • H04N13/356—Image reproducers having separate monoscopic and stereoscopic modes
    • H04N13/359—Switching between monoscopic and stereoscopic modes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N13/00—Stereoscopic video systems; Multi-view video systems; Details thereof
    • H04N13/30—Image reproducers
    • H04N13/361—Reproducing mixed stereoscopic images; Reproducing mixed monoscopic and stereoscopic images, e.g. a stereoscopic image overlay window on a monoscopic image background
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1347—Arrangement of liquid crystal layers or cells in which the final condition of one light beam is achieved by the addition of the effects of two or more layers or cells
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N2213/00—Details of stereoscopic systems
    • H04N2213/001—Constructional or mechanical details

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Liquid Crystal (AREA)
  • Computer Hardware Design (AREA)
  • Theoretical Computer Science (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Testing, Inspecting, Measuring Of Stereoscopic Televisions And Televisions (AREA)
  • Liquid Crystal Display Device Control (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
JP2012025917A 2011-02-14 2012-02-09 表示装置 Active JP6047289B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012025917A JP6047289B2 (ja) 2011-02-14 2012-02-09 表示装置

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2011029203 2011-02-14
JP2011029203 2011-02-14
JP2011030566 2011-02-16
JP2011030566 2011-02-16
JP2011133336 2011-06-15
JP2011133336 2011-06-15
JP2012025917A JP6047289B2 (ja) 2011-02-14 2012-02-09 表示装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2016225625A Division JP2017076131A (ja) 2011-02-14 2016-11-21 表示装置

Publications (3)

Publication Number Publication Date
JP2013020224A JP2013020224A (ja) 2013-01-31
JP2013020224A5 JP2013020224A5 (enExample) 2015-03-12
JP6047289B2 true JP6047289B2 (ja) 2016-12-21

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Family Applications (3)

Application Number Title Priority Date Filing Date
JP2012025917A Active JP6047289B2 (ja) 2011-02-14 2012-02-09 表示装置
JP2016225625A Withdrawn JP2017076131A (ja) 2011-02-14 2016-11-21 表示装置
JP2019022299A Withdrawn JP2019082728A (ja) 2011-02-14 2019-02-12 表示装置

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2016225625A Withdrawn JP2017076131A (ja) 2011-02-14 2016-11-21 表示装置
JP2019022299A Withdrawn JP2019082728A (ja) 2011-02-14 2019-02-12 表示装置

Country Status (4)

Country Link
US (2) US9167234B2 (enExample)
JP (3) JP6047289B2 (enExample)
TW (1) TWI569041B (enExample)
WO (1) WO2012111578A1 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI569041B (zh) 2011-02-14 2017-02-01 半導體能源研究所股份有限公司 顯示裝置
US9035860B2 (en) 2011-02-16 2015-05-19 Semiconductor Energy Laboratory Co., Ltd. Display device
US9443455B2 (en) 2011-02-25 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Display device having a plurality of pixels
US8994763B2 (en) 2011-03-25 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method of the same
US8988411B2 (en) 2011-07-08 2015-03-24 Semiconductor Energy Laboratory Co., Ltd. Display device
JP6178050B2 (ja) 2011-07-15 2017-08-09 株式会社半導体エネルギー研究所 表示装置
JP2013051660A (ja) * 2011-08-04 2013-03-14 Sony Corp 送信装置、送信方法および受信装置
US9225972B2 (en) 2012-08-10 2015-12-29 Pixtronix, Inc. Three dimensional (3D) image generation using electromechanical display elements
CN104058363B (zh) * 2013-03-22 2016-01-20 上海丽恒光微电子科技有限公司 基于mems透射光阀的显示装置及其形成方法
CN104023223B (zh) * 2014-05-29 2016-03-02 京东方科技集团股份有限公司 显示控制方法、装置及系统
WO2016161161A1 (en) * 2015-03-31 2016-10-06 Cree, Inc. Light emitting diodes and methods with encapsulation
US12364074B2 (en) 2015-03-31 2025-07-15 Creeled, Inc. Light emitting diodes and methods
CN105093550A (zh) * 2015-09-02 2015-11-25 京东方科技集团股份有限公司 一种3d显示装置及其驱动方法
CN105425405B (zh) * 2015-12-09 2019-02-12 京东方科技集团股份有限公司 一种3d显示面板组件、3d显示装置及其驱动方法
WO2017122595A1 (ja) * 2016-01-13 2017-07-20 シャープ株式会社 表示装置、液晶パネルの駆動方法
CN105467604B (zh) * 2016-02-16 2018-01-12 京东方科技集团股份有限公司 一种3d显示装置及其驱动方法
CN205645818U (zh) * 2016-05-18 2016-10-12 武汉华星光电技术有限公司 一种oled显示面板
CN106774324B (zh) * 2016-12-22 2020-06-09 以恒激光科技（北京）有限公司 一种双摄像头三维识别巡逻机器人
US10690986B2 (en) 2017-09-13 2020-06-23 Apple Inc. Electronic devices having electrically adjustable optical shutters
KR102366760B1 (ko) * 2017-09-14 2022-02-22 엘지디스플레이 주식회사 표시장치
KR102436564B1 (ko) * 2017-12-29 2022-08-26 엘지디스플레이 주식회사 배리어 패널을 포함하는 입체 영상 표시 장치
CN108469682A (zh) * 2018-03-30 2018-08-31 京东方科技集团股份有限公司 一种三维显示装置及其三维显示方法
TWI761048B (zh) * 2021-01-25 2022-04-11 友達光電股份有限公司 顯示裝置
WO2025023738A1 (ko) * 2023-07-24 2025-01-30 삼성전자주식회사 3d 컨텐트를 표시하는 전자 장치 및 이의 제어 방법

Family Cites Families (180)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60198861A (ja) 1984-03-23 1985-10-08 Fujitsu Ltd 薄膜トランジスタ
JPH0244256B2 (ja) 1987-01-28 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244260B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPS63210023A (ja) 1987-02-24 1988-08-31 Natl Inst For Res In Inorg Mater ＩｎＧａＺｎ↓４Ｏ↓７で示される六方晶系の層状構造を有する化合物およびその製造法
JPH0244258B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244262B2 (ja) 1987-02-27 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244263B2 (ja) 1987-04-22 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JP2857429B2 (ja) * 1989-10-02 1999-02-17 日本放送協会 ３次元画像表示装置および方法
JP3487594B2 (ja) * 1990-03-23 2004-01-19 松下電器産業株式会社 液晶表示素子
JPH05122733A (ja) 1991-10-28 1993-05-18 Nippon Hoso Kyokai <Nhk> ３次元画像表示装置
JPH05251705A (ja) 1992-03-04 1993-09-28 Fuji Xerox Co Ltd 薄膜トランジスタ
JP2919759B2 (ja) 1994-05-18 1999-07-19 三洋電機株式会社 光学フィルタ及びこれを用いる立体表示装置
CN1095090C (zh) 1994-05-31 2002-11-27 株式会社半导体能源研究所 一种有源矩阵型液晶显示器
JPH0876058A (ja) * 1994-06-30 1996-03-22 Sanyo Electric Co Ltd 光シャッター及び３次元画像表示装置
GB2296617A (en) 1994-12-29 1996-07-03 Sharp Kk Observer tracking autosteroscopic display
JP3479375B2 (ja) 1995-03-27 2003-12-15 科学技術振興事業団 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとｐｎ接合を形成した金属酸化物半導体装置およびそれらの製造方法
JP3459721B2 (ja) 1995-05-22 2003-10-27 キヤノン株式会社 立体画像表示方法及びそれを用いた立体画像表示装置
JPH0973049A (ja) * 1995-06-29 1997-03-18 Canon Inc 画像表示方法及びそれを用いた画像表示装置
WO1997006554A2 (en) 1995-08-03 1997-02-20 Philips Electronics N.V. Semiconductor device provided with transparent switching element
US6377230B1 (en) 1995-10-05 2002-04-23 Semiconductor Energy Laboratory Co., Ltd. Three dimensional display unit and display method
JP3625598B2 (ja) 1995-12-30 2005-03-02 三星電子株式会社 液晶表示装置の製造方法
GB2317710A (en) 1996-09-27 1998-04-01 Sharp Kk Spatial light modulator and directional display
DE19640936C2 (de) 1996-10-04 1999-06-10 Siegbert Prof Dr Ing Hentschke Positionsadaptiver Autostereoskoper Monitor (PAM)
JPH10232626A (ja) 1997-02-20 1998-09-02 Canon Inc 立体画像表示装置
JPH11285030A (ja) 1998-03-26 1999-10-15 Mr System Kenkyusho:Kk 立体画像表示方法及び立体画像表示装置
JP4170454B2 (ja) 1998-07-24 2008-10-22 Ｈｏｙａ株式会社 透明導電性酸化物薄膜を有する物品及びその製造方法
US7317438B2 (en) 1998-10-30 2008-01-08 Semiconductor Energy Laboratory Co., Ltd. Field sequential liquid crystal display device and driving method thereof, and head mounted display
JP2000150861A (ja) 1998-11-16 2000-05-30 Tdk Corp 酸化物薄膜
JP3276930B2 (ja) 1998-11-17 2002-04-22 科学技術振興事業団 トランジスタ及び半導体装置
US6597348B1 (en) 1998-12-28 2003-07-22 Semiconductor Energy Laboratory Co., Ltd. Information-processing device
US7145536B1 (en) 1999-03-26 2006-12-05 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
TW460731B (en) 1999-09-03 2001-10-21 Ind Tech Res Inst Electrode structure and production method of wide viewing angle LCD
EP1087627A3 (en) 1999-09-24 2004-02-18 SANYO ELECTRIC Co., Ltd. Autostereoscopic image display device
US6882012B2 (en) 2000-02-28 2005-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and a method of manufacturing the same
TW518552B (en) 2000-08-18 2003-01-21 Semiconductor Energy Lab Liquid crystal display device, method of driving the same, and method of driving a portable information device having the liquid crystal display device
JP4089858B2 (ja) 2000-09-01 2008-05-28 国立大学法人東北大学 半導体デバイス
US7385579B2 (en) 2000-09-29 2008-06-10 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method of driving the same
KR20020038482A (ko) 2000-11-15 2002-05-23 모리시타 요이찌 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널
JP2002207462A (ja) * 2001-01-11 2002-07-26 Toshiba Corp 液晶表示素子の駆動方法
JP3997731B2 (ja) 2001-03-19 2007-10-24 富士ゼロックス株式会社 基材上に結晶性半導体薄膜を形成する方法
JP2002289859A (ja) 2001-03-23 2002-10-04 Minolta Co Ltd 薄膜トランジスタ
GB0119176D0 (en) 2001-08-06 2001-09-26 Ocuity Ltd Optical switching apparatus
JP3925839B2 (ja) 2001-09-10 2007-06-06 シャープ株式会社 半導体記憶装置およびその試験方法
JP4090716B2 (ja) 2001-09-10 2008-05-28 雅司 川崎 薄膜トランジスタおよびマトリクス表示装置
WO2003038518A1 (en) * 2001-10-30 2003-05-08 Pixelligent Technologies Llc Advanced exposure techniques for programmable lithography
JP4164562B2 (ja) 2002-09-11 2008-10-15 独立行政法人科学技術振興機構 ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ
US7061014B2 (en) 2001-11-05 2006-06-13 Japan Science And Technology Agency Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
JP4083486B2 (ja) 2002-02-21 2008-04-30 独立行政法人科学技術振興機構 ＬｎＣｕＯ（Ｓ，Ｓｅ，Ｔｅ）単結晶薄膜の製造方法
JP2003259395A (ja) 2002-03-06 2003-09-12 Matsushita Electric Ind Co Ltd 立体表示方法及び立体表示装置
US7049190B2 (en) 2002-03-15 2006-05-23 Sanyo Electric Co., Ltd. Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device
JP3933591B2 (ja) 2002-03-26 2007-06-20 淳二 城戸 有機エレクトロルミネッセント素子
US7339187B2 (en) 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
JP2004022625A (ja) 2002-06-13 2004-01-22 Murata Mfg Co Ltd 半導体デバイス及び該半導体デバイスの製造方法
US7105868B2 (en) 2002-06-24 2006-09-12 Cermet, Inc. High-electron mobility transistor with zinc oxide
JP2004077567A (ja) 2002-08-09 2004-03-11 Semiconductor Energy Lab Co Ltd 表示装置及びその駆動方法
JP2004094058A (ja) 2002-09-02 2004-03-25 Semiconductor Energy Lab Co Ltd 液晶表示装置および液晶表示装置の駆動方法
US7193593B2 (en) 2002-09-02 2007-03-20 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method of driving a liquid crystal display device
US7067843B2 (en) 2002-10-11 2006-06-27 E. I. Du Pont De Nemours And Company Transparent oxide semiconductor thin film transistors
CN1329765C (zh) 2002-10-30 2007-08-01 株式会社半导体能源研究所 显示装置和电子设备
KR100490416B1 (ko) * 2002-11-23 2005-05-17 삼성전자주식회사 2차원 영상 및 3차원 영상의 선택적 디스플레이 가능한 디스플레이장치
JP4166105B2 (ja) 2003-03-06 2008-10-15 シャープ株式会社 半導体装置およびその製造方法
JP2004273732A (ja) 2003-03-07 2004-09-30 Sharp Corp アクティブマトリクス基板およびその製造方法
JP2004294914A (ja) * 2003-03-27 2004-10-21 Sanyo Electric Co Ltd 立体映像表示装置
JP4108633B2 (ja) 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
GB2403367A (en) 2003-06-28 2004-12-29 Sharp Kk Multiple view display
TWI395996B (zh) 2003-07-14 2013-05-11 半導體能源研究所股份有限公司 半導體裝置及顯示裝置
US7262463B2 (en) 2003-07-25 2007-08-28 Hewlett-Packard Development Company, L.P. Transistor including a deposited channel region having a doped portion
JP2005092103A (ja) 2003-09-19 2005-04-07 Sharp Corp 立体映像表示装置
GB0326005D0 (en) 2003-11-07 2003-12-10 Koninkl Philips Electronics Nv Waveguide for autostereoscopic display
JP2005258013A (ja) 2004-03-11 2005-09-22 Sharp Corp 表示パネルおよび表示装置
EP1737044B1 (en) 2004-03-12 2014-12-10 Japan Science and Technology Agency Amorphous oxide and thin film transistor
US7145174B2 (en) 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
US7297977B2 (en) 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
US7282782B2 (en) 2004-03-12 2007-10-16 Hewlett-Packard Development Company, L.P. Combined binary oxide semiconductor device
JP2005293916A (ja) * 2004-03-31 2005-10-20 Seiko Epson Corp 電気光学装置及び電子機器
US7573491B2 (en) * 2004-04-02 2009-08-11 David Hartkop Method for formatting images for angle-specific viewing in a scanning aperture display device
KR100728777B1 (ko) * 2004-04-07 2007-06-19 삼성에스디아이 주식회사 패럴랙스 베리어 및 이를 구비한 입체 영상 표시장치
KR101089199B1 (ko) 2004-04-22 2011-12-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광장치 및 그 구동방법
US7211825B2 (en) 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
JP2006100760A (ja) 2004-09-02 2006-04-13 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
US7285501B2 (en) 2004-09-17 2007-10-23 Hewlett-Packard Development Company, L.P. Method of forming a solution processed device
GB2418315A (en) 2004-09-21 2006-03-22 Sharp Kk Multiple view display
US7298084B2 (en) 2004-11-02 2007-11-20 3M Innovative Properties Company Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes
US7453065B2 (en) 2004-11-10 2008-11-18 Canon Kabushiki Kaisha Sensor and image pickup device
KR20070085879A (ko) 2004-11-10 2007-08-27 캐논 가부시끼가이샤 발광 장치
US7829444B2 (en) 2004-11-10 2010-11-09 Canon Kabushiki Kaisha Field effect transistor manufacturing method
US7863611B2 (en) 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
JP5118812B2 (ja) 2004-11-10 2013-01-16 キヤノン株式会社 電界効果型トランジスタ
EP2455975B1 (en) 2004-11-10 2015-10-28 Canon Kabushiki Kaisha Field effect transistor with amorphous oxide
US7791072B2 (en) 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
KR100786862B1 (ko) * 2004-11-30 2007-12-20 삼성에스디아이 주식회사 배리어 장치, 이를 이용한 입체영상 표시장치 및 그구동방법
US7579224B2 (en) 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
TWI412138B (zh) 2005-01-28 2013-10-11 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
TWI569441B (zh) 2005-01-28 2017-02-01 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
US7858451B2 (en) 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
US7948171B2 (en) 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US20060197092A1 (en) 2005-03-03 2006-09-07 Randy Hoffman System and method for forming conductive material on a substrate
JP4934974B2 (ja) 2005-03-17 2012-05-23 エプソンイメージングデバイス株式会社 画像表示装置
US8681077B2 (en) 2005-03-18 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device, driving method and electronic apparatus thereof
US7544967B2 (en) 2005-03-28 2009-06-09 Massachusetts Institute Of Technology Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications
US7645478B2 (en) 2005-03-31 2010-01-12 3M Innovative Properties Company Methods of making displays
US8300031B2 (en) 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
JP2006344849A (ja) 2005-06-10 2006-12-21 Casio Comput Co Ltd 薄膜トランジスタ
US7691666B2 (en) 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7402506B2 (en) 2005-06-16 2008-07-22 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7507618B2 (en) 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
KR100711890B1 (ko) 2005-07-28 2007-04-25 삼성에스디아이 주식회사 유기 발광표시장치 및 그의 제조방법
JP2007036127A (ja) * 2005-07-29 2007-02-08 Sanyo Electric Co Ltd 有機エレクトロルミネッセンス素子
JP2007059128A (ja) 2005-08-23 2007-03-08 Canon Inc 有機ｅｌ表示装置およびその製造方法
JP5116225B2 (ja) 2005-09-06 2013-01-09 キヤノン株式会社 酸化物半導体デバイスの製造方法
JP2007073705A (ja) 2005-09-06 2007-03-22 Canon Inc 酸化物半導体チャネル薄膜トランジスタおよびその製造方法
JP4850457B2 (ja) 2005-09-06 2012-01-11 キヤノン株式会社 薄膜トランジスタ及び薄膜ダイオード
JP4280736B2 (ja) 2005-09-06 2009-06-17 キヤノン株式会社 半導体素子
EP1998375A3 (en) 2005-09-29 2012-01-18 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method
EP1777689B1 (en) * 2005-10-18 2016-08-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device and electronic equipment each having the same
JP5037808B2 (ja) 2005-10-20 2012-10-03 キヤノン株式会社 アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置
KR101050767B1 (ko) 2005-11-15 2011-07-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 제조방법
TWI292281B (en) 2005-12-29 2008-01-01 Ind Tech Res Inst Pixel structure of active organic light emitting diode and method of fabricating the same
US7867636B2 (en) 2006-01-11 2011-01-11 Murata Manufacturing Co., Ltd. Transparent conductive film and method for manufacturing the same
JP4977478B2 (ja) 2006-01-21 2012-07-18 三星電子株式会社 ＺｎＯフィルム及びこれを用いたＴＦＴの製造方法
US7576394B2 (en) 2006-02-02 2009-08-18 Kochi Industrial Promotion Center Thin film transistor including low resistance conductive thin films and manufacturing method thereof
US7977169B2 (en) 2006-02-15 2011-07-12 Kochi Industrial Promotion Center Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
JP2007250982A (ja) 2006-03-17 2007-09-27 Canon Inc 酸化物半導体を用いた薄膜トランジスタ及び表示装置
KR20070101595A (ko) 2006-04-11 2007-10-17 삼성전자주식회사 ＺｎＯ ＴＦＴ
US20070252928A1 (en) 2006-04-28 2007-11-01 Toppan Printing Co., Ltd. Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof
US8154493B2 (en) 2006-06-02 2012-04-10 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device, driving method of the same, and electronic device using the same
US8106865B2 (en) 2006-06-02 2012-01-31 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method thereof
JP5028033B2 (ja) 2006-06-13 2012-09-19 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4999400B2 (ja) 2006-08-09 2012-08-15 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4609797B2 (ja) 2006-08-09 2011-01-12 Ｎｅｃ液晶テクノロジー株式会社 薄膜デバイス及びその製造方法
JP4332545B2 (ja) 2006-09-15 2009-09-16 キヤノン株式会社 電界効果型トランジスタ及びその製造方法
JP4274219B2 (ja) 2006-09-27 2009-06-03 セイコーエプソン株式会社 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置
JP5164357B2 (ja) 2006-09-27 2013-03-21 キヤノン株式会社 半導体装置及び半導体装置の製造方法
US7622371B2 (en) 2006-10-10 2009-11-24 Hewlett-Packard Development Company, L.P. Fused nanocrystal thin film semiconductor and method
US7772021B2 (en) 2006-11-29 2010-08-10 Samsung Electronics Co., Ltd. Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays
JP2008140684A (ja) 2006-12-04 2008-06-19 Toppan Printing Co Ltd カラーｅｌディスプレイおよびその製造方法
KR101303578B1 (ko) 2007-01-05 2013-09-09 삼성전자주식회사 박막 식각 방법
US8207063B2 (en) 2007-01-26 2012-06-26 Eastman Kodak Company Process for atomic layer deposition
JP2008223066A (ja) * 2007-03-12 2008-09-25 Seiko Epson Corp 蒸着装置
KR100851215B1 (ko) 2007-03-14 2008-08-07 삼성에스디아이 주식회사 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치
US7795613B2 (en) 2007-04-17 2010-09-14 Toppan Printing Co., Ltd. Structure with transistor
KR101325053B1 (ko) 2007-04-18 2013-11-05 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
KR20080094300A (ko) 2007-04-19 2008-10-23 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이
KR101334181B1 (ko) 2007-04-20 2013-11-28 삼성전자주식회사 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법
CN101663762B (zh) 2007-04-25 2011-09-21 佳能株式会社 氧氮化物半导体
KR101345376B1 (ko) 2007-05-29 2013-12-24 삼성전자주식회사 ＺｎＯ 계 박막 트랜지스터 및 그 제조방법
US8648782B2 (en) 2007-10-22 2014-02-11 Semiconductor Energy Laboratory Co., Ltd. Display device
JP5213422B2 (ja) * 2007-12-04 2013-06-19 キヤノン株式会社 絶縁層を有する酸化物半導体素子およびそれを用いた表示装置
JP5215158B2 (ja) 2007-12-17 2013-06-19 富士フイルム株式会社 無機結晶性配向膜及びその製造方法、半導体デバイス
CN101911303B (zh) * 2007-12-25 2013-03-27 出光兴产株式会社 氧化物半导体场效应晶体管及其制造方法
JP2009267399A (ja) 2008-04-04 2009-11-12 Fujifilm Corp 半導体装置，半導体装置の製造方法，表示装置及び表示装置の製造方法
KR20090124527A (ko) * 2008-05-30 2009-12-03 삼성모바일디스플레이주식회사 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치
JP5510767B2 (ja) * 2008-06-19 2014-06-04 出光興産株式会社 薄膜トランジスタおよびその製造方法
EP2291856A4 (en) 2008-06-27 2015-09-23 Semiconductor Energy Lab THIN FILM TRANSISTOR
JP5644071B2 (ja) 2008-08-20 2014-12-24 株式会社リコー 電界効果型トランジスタ、表示素子、画像表示装置及びシステム
JP4623179B2 (ja) 2008-09-18 2011-02-02 ソニー株式会社 薄膜トランジスタおよびその製造方法
JP5345359B2 (ja) * 2008-09-18 2013-11-20 富士フイルム株式会社 薄膜電界効果型トランジスタおよびそれを用いた表示装置
JP5451280B2 (ja) 2008-10-09 2014-03-26 キヤノン株式会社 ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置
JP5442234B2 (ja) 2008-10-24 2014-03-12 株式会社半導体エネルギー研究所 半導体装置及び表示装置
JP2010128306A (ja) 2008-11-28 2010-06-10 Dainippon Printing Co Ltd カラーフィルタおよび有機エレクトロルミネッセンス表示装置
US8530897B2 (en) 2008-12-11 2013-09-10 Semiconductor Energy Laboratory Co., Ltd. Display device including an inverter circuit having a microcrystalline layer
JP5396944B2 (ja) 2008-12-22 2014-01-22 ソニー株式会社 レンズアレイ素子および画像表示装置
JP5100670B2 (ja) 2009-01-21 2012-12-19 株式会社半導体エネルギー研究所 タッチパネル、電子機器
US8367486B2 (en) 2009-02-05 2013-02-05 Semiconductor Energy Laboratory Co., Ltd. Transistor and method for manufacturing the transistor
JP5521380B2 (ja) 2009-04-13 2014-06-11 ソニー株式会社 立体表示装置
JP2010251156A (ja) * 2009-04-16 2010-11-04 Panasonic Corp カラー有機エレクトロルミネッセンス表示装置およびその製造方法
KR101354329B1 (ko) 2009-04-17 2014-01-22 엘지디스플레이 주식회사 영상표시장치
JP2010256815A (ja) * 2009-04-28 2010-11-11 Nikon Corp 画像提示装置、プログラムおよび画像提示方法
JP5563250B2 (ja) 2009-06-30 2014-07-30 株式会社ジャパンディスプレイ 立体画像表示装置
KR101476817B1 (ko) * 2009-07-03 2014-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터를 갖는 표시 장치 및 그 제작 방법
JP5356952B2 (ja) 2009-08-31 2013-12-04 レムセン イノベーション、リミティッド ライアビリティー カンパニー 表示装置
KR101801538B1 (ko) * 2009-10-16 2017-11-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 논리 회로 및 반도체 장치
US8964013B2 (en) 2009-12-31 2015-02-24 Broadcom Corporation Display with elastic light manipulator
JP5615136B2 (ja) * 2010-01-12 2014-10-29 三菱電機株式会社 立体画像補正方法、立体表示装置、および立体画像生成装置
US8427626B2 (en) 2010-01-27 2013-04-23 Sony Corporation Lens array element and image display device
WO2011122299A1 (en) 2010-03-31 2011-10-06 Semiconductor Energy Laboratory Co., Ltd. Driving method of liquid crystal display device
US8730416B2 (en) 2010-12-17 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
TWI569041B (zh) 2011-02-14 2017-02-01 半導體能源研究所股份有限公司 顯示裝置
KR101899178B1 (ko) 2011-02-16 2018-09-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
US9443455B2 (en) 2011-02-25 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Display device having a plurality of pixels

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