JP6041139B2 - 異なる半導体材料の半導体相互接続層及び半導体チャネル層を備えたトランジスタ - Google Patents
異なる半導体材料の半導体相互接続層及び半導体チャネル層を備えたトランジスタ Download PDFInfo
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- JP6041139B2 JP6041139B2 JP2012534236A JP2012534236A JP6041139B2 JP 6041139 B2 JP6041139 B2 JP 6041139B2 JP 2012534236 A JP2012534236 A JP 2012534236A JP 2012534236 A JP2012534236 A JP 2012534236A JP 6041139 B2 JP6041139 B2 JP 6041139B2
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- 239000004065 semiconductor Substances 0.000 title claims description 460
- 239000000463 material Substances 0.000 title claims description 85
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 93
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 92
- 230000000903 blocking effect Effects 0.000 claims description 49
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 45
- 150000004767 nitrides Chemical class 0.000 claims description 26
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 20
- 239000002019 doping agent Substances 0.000 claims description 18
- 230000004044 response Effects 0.000 claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 239000013078 crystal Substances 0.000 claims description 9
- 239000010410 layer Substances 0.000 description 482
- 108091006146 Channels Proteins 0.000 description 109
- 229920005591 polysilicon Polymers 0.000 description 41
- 229910002601 GaN Inorganic materials 0.000 description 33
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 28
- 239000000758 substrate Substances 0.000 description 28
- 230000005669 field effect Effects 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 10
- 238000002513 implantation Methods 0.000 description 8
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 7
- 230000002441 reversible effect Effects 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- -1 GaN) Chemical class 0.000 description 3
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
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- H01L29/66409—Unipolar field-effect transistors
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Description
101a コンタクト領域
103 半導体チャネル層
103a 半導体層
103b 半導体層
103c 半導体層
103d コンタクト領域
105 半導体相互接続層
107 半導体遮断領域
109 ゲート電極
111 絶縁層
115 ソース/ドレイン電極
117 コンタクト領域
119 ソース/ドレイン電極
121 コンタクト層
Claims (13)
- 第1の半導体材料の半導体ドリフト層と、
前記半導体ドリフト層上の、前記第1の半導体材料とは異なる第2の半導体材料を含む半導体チャネル層と、
前記半導体ドリフト層と前記半導体チャネル層の間に電気的に結合された、前記第1及び第2の半導体材料とは異なる第3の半導体材料を含む相互接続層と、
前記半導体チャネル層の前記相互接続層から離れた部分に電気的に結合された第1の被制御電極と、
前記半導体ドリフト層の前記半導体チャネル層とは反対側に電気的に結合されて、前記半導体ドリフト層を前記第1の被制御電極との間に挟むようにする第2の被制御電極と、
前記第1の被制御電極と前記相互接続層との間の前記半導体チャネル層の一部上の制御電極と、
を備え、
前記相互接続層は前記半導体ドリフト層の上にあり、前記半導体チャネル層は前記相互接続層の側面側にあり、前記相互接続層は前記半導体ドリフト層及び前記半導体チャネル層とオーム接触し、
前記第3の半導体材料が、多結晶半導体材料を含み、
前記第1の半導体材料がシリコンカーバイドを含み、前記第2の半導体材料がIII族窒化物を含み、前記第3の半導体材料がシリコンを含む、
ことを特徴とするトランジスタ。 - 前記第1及び第2の半導体材料が、単結晶の半導体材料を含む、
ことを特徴とする請求項1に記載のトランジスタ。 - 前記相互接続層が半導体相互接続層を含み、前記半導体ドリフト層及び前記半導体相互接続層が第1の導電型を有し、前記トランジスタが、前記半導体チャネル層と前記半導体ドリフト層の間に、前記第1の導電型とは異なる第2の導電型を有する半導体遮断領域をさらに備え、
前記半導体遮断領域がシリコンカーバイドを含む、
ことを特徴とする請求項1に記載のトランジスタ。 - 前記半導体ドリフト層及び前記半導体遮断領域が、前記第1の半導体材料を含む、
ことを特徴とする請求項3に記載のトランジスタ。 - 前記半導体チャネル層が、ヘテロ接合を形成して二次元電子ガス(2DEG)を提供する半導体層のスタックを含み、前記半導体チャネル層が、前記制御電極と前記半導体ドリフト層の間に存在し、前記制御電極が、該制御電極に印加される電気信号に応答して前記二次元電子ガスの導電率を調整するように構成される、
ことを特徴とする請求項1に記載のトランジスタ。 - 前記半導体ドリフト層が第1の導電型を有し、前記半導体チャネル層が、第1、第2、
及び第3の半導体層を含み、前記第1及び第3の半導体層が第1の導電型を有し、前記第2の半導体層が、前記第1の導電型とは異なる第2の導電型を有し、前記第2の半導体層が、前記第1の半導体層と前記第3の半導体層の間に存在し、前記第1の半導体層が、前記第2の半導体層と前記半導体ドリフト層の間に存在し、前記第1の半導体層が、前記相互接続層に電気的に結合され、前記制御電極が、絶縁層を介して前記第2の半導体層の端部に隣接し、前記制御電極が、該制御電極に印加される電気信号に応答して前記第2の半導体層の導電率を調整するように構成される、
ことを特徴とする請求項1に記載のトランジスタ。 - 前記半導体ドリフト層が第1の導電型を有し、前記半導体チャネル層が、前記第1の導電型とは異なる第2の導電型を有するバルク領域と、前記第1の導電型を有する第1及び第2の離間したコンタクト領域とを含み、前記第2のコンタクト領域が、前記相互接続層に電気的に結合され、前記制御電極が、絶縁層を介して前記第1のコンタクト領域と前記第2のコンタクト領域の間の前記バルク領域に隣接し、前記制御電極が、該制御電極に印加される電気信号に応答して前記バルク領域の導電率を調整するように構成される、
ことを特徴とする請求項1に記載のトランジスタ。 - 前記相互接続層が半導体相互接続層を含み、前記半導体チャネル層が、前記半導体相互接続層に電気的に結合された高ドープコンタクト領域を含み、前記高ドープコンタクト領域、前記半導体相互接続層、及び半導体ドリフト層が同じ導電型を有し、前記高ドープコンタクト領域は、前記半導体相互接続層と前記半導体チャネル層との間で電気的に結合されたことを特徴とする請求項1に記載のトランジスタ。
- 前記半導体ドリフト層と前記相互接続層の間に前記第1の半導体材料の半導体コンタクト領域をさらに備え、前記半導体ドリフト層及び前記半導体コンタクト領域が同じ導電型を有し、前記半導体コンタクト領域のドーパント濃度が、前記半導体ドリフト層のドーパント濃度よりも高く、
前記第1の半導体材料と前記第3の半導体材料は異なることを特徴とする請求項1に記載のトランジスタ。 - 前記半導体チャネル層の前記相互接続層から離れた部分に電気的に結合された第1の被制御電極と、
前記半導体ドリフト層の前記半導体チャネル層とは反対側に電気的に結合されて、前記半導体ドリフト層を前記第1の被制御電極との間に挟むようにする第2の被制御電極と、
をさらに備え、前記制御電極が、該制御電極に印加される電気信号に応答して前記半導体チャネル層の導電率を調整するように構成される、
ことを特徴とする請求項1に記載のトランジスタ。 - 第1の導電型を有する、第1の半導体材料の半導体ドリフト層と、
前記半導体ドリフト層上の、前記第1の導電型とは異なる第2の導電型を有する半導体遮断領域と、
前記半導体遮断領域上の、前記第1の半導体材料とは異なる第2の半導体材料を含む半導体チャネル層と、
を備え、
前記半導体遮断領域が、前記半導体ドリフト層と前記半導体チャネル層の間に存在し、
前記半導体ドリフト層と前記半導体チャネル層の間に電気的に接続された、前記第1及び第2の半導体材料とは異なる第3の半導体材料を含む相互接続層と、
前記半導体チャネル層の前記相互接続層から離れた部分に電気的に結合された第1の被制御電極と、
前記半導体ドリフト層の前記半導体チャネル層とは反対側に電気的に結合されて、前記半導体ドリフト層を前記第1の被制御電極との間に挟むようにする第2の被制御電極と、
前記第1の被制御電極と前記相互接続層の間の前記半導体チャネル層の一部上の制御電極と、
をさらに備え、
前記相互接続層は前記半導体ドリフト層の上にあり、前記半導体チャネル層は前記相互接続層の側面側にあり、前記相互接続層は前記半導体ドリフト層及び前記半導体チャネル層とオーム接触し、
前記制御電極が、該制御電極に印加される電気信号に応答して前記半導体チャネル層の導電率を調整するように構成され、
前記第3の半導体材料は、多結晶半導体材料を含み、
前記第1の半導体材料がシリコンカーバイドを含み、前記第2の半導体材料がIII族窒化物を含み、前記第3の半導体材料がシリコンを含み、
前記半導体遮断領域がシリコンカーバイドを含む、
ことを特徴とするトランジスタ。 - 第1の導電型を有するシリコンカーバイドドリフト層と、
前記シリコンカーバイドドリフト層上のIII族窒化物チャネル層と、
前記III族窒化物チャネル層の一部に電気的に結合された第1の被制御電極と、
前記シリコンカーバイドドリフト層の前記III族窒化物チャネル層とは反対側に電気的に結合されて、前記シリコンカーバイドドリフト層を前記第1の被制御電極との間に挟むようにする第2の被制御電極と、
前記III族窒化物チャネル層上の制御電極と、
前記シリコンカーバイドドリフト層と前記III族窒化物チャネル層の間の、前記第1の導電型とは異なる第2の導電型を有する半導体遮断領域と、
前記シリコンカーバイドドリフト層と前記III族窒化物チャネル層の間に電気的に接続された相互接続層と、
を備え、前記相互接続層が、前記III族窒化物チャネル層のIII族窒化物ともシリコンカーバイドとも異なる材料を含み、
前記第1の被制御電極は、前記III族窒化物チャネル層の前記相互接続層から離れた部分に電気的に結合され、
前記制御電極は、前記第1の被制御電極と前記相互接続層との間の前記III族窒化物チャネル層の一部上にあり、
前記相互接続層は前記シリコンカーバイドドリフト層の上にあり、前記III族窒化物チャネル層は前記相互接続層の側面側にあり、前記相互接続層は前記シリコンカーバイドドリフト層及び前記III族窒化物チャネル層とオーム接触し、
前記半導体遮断領域がシリコンカーバイドを含み、前記相互接続層は多結晶シリコン半導体材料を含むことを特徴とするトランジスタ。 - 半導体ドリフト層と、
前記半導体ドリフト層上の、ヘテロ接合を形成して二次元電子ガス(2DEG)を提供する半導体層のスタックを含む半導体チャネル層と、
前記半導体チャネル層の一部に電気的に結合された第1の被制御電極と、
前記半導体ドリフト層の前記半導体チャネル層とは反対側に電気的に結合されて、前記半導体ドリフト層を前記第1の被制御電極との間に挟むようにする第2の被制御電極と、
前記半導体チャネル層上の制御電極と、
を備え、前記制御電極が、該制御電極に印加される電気信号に応答して前記二次元電子ガスの導電率を調整するように構成され、
前記半導体ドリフト層がシリコンカーバイドドリフト層を含み、前記半導体チャネル層がIII族窒化物チャネル層を含み、
前記III族窒化物チャネル層と前記シリコンカーバイドドリフト層の間に電気的に接続されたシリコン相互接続層をさらに備え、
前記第1の被制御電極は、前記III族窒化物チャネル層の前記シリコン相互接続層から離れた部分に電気的に結合され、
前記制御電極は、前記第1の被制御電極と前記シリコン相互接続層との間の前記III族窒化物チャネル層の一部上にあり、
前記シリコン相互接続層は前記シリコンカーバイドドリフト層の上にあり、前記III族窒化物チャネル層は前記シリコン相互接続層の側面側にあり、前記シリコン相互接続層は前記シリコンカーバイドドリフト層及び前記III族窒化物チャネル層とオーム接触する、
ことを特徴とする縦型高電子移動度トランジスタ(HEMT)。
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DE112010004021T5 (de) | 2013-06-27 |
WO2011046799A1 (en) | 2011-04-21 |
US9312343B2 (en) | 2016-04-12 |
JP2013507789A (ja) | 2013-03-04 |
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