JP6035245B2 - 電界効果トランジスタデバイスを製造する方法 - Google Patents
電界効果トランジスタデバイスを製造する方法 Download PDFInfo
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- JP6035245B2 JP6035245B2 JP2013540371A JP2013540371A JP6035245B2 JP 6035245 B2 JP6035245 B2 JP 6035245B2 JP 2013540371 A JP2013540371 A JP 2013540371A JP 2013540371 A JP2013540371 A JP 2013540371A JP 6035245 B2 JP6035245 B2 JP 6035245B2
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- Y10S977/938—Field effect transistors, FETS, with nanowire- or nanotube-channel region
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Description
Claims (6)
- 複数の基本トランジスタを含み、網目状に設けられた垂直ナノワイヤに実装された電界効果トランジスタデバイスを製造する方法であって、各前記基本トランジスタは、ソース電極およびドレイン電極を含み、網目状に設けられた各前記垂直ナノワイヤの一端に置かれて、チャネルによって接続されており、各前記基本トランジスタは、各前記垂直ナノワイヤを取り囲むゲート電極を含み、前記ナノワイヤ上に実装された前記基本トランジスタの前記ドレイン、ソース、およびゲートの電極は、前記トランジスタデバイスに共通のドレイン、ソース、およびゲート電極を形成するべくそれぞれ互いに接続されており、
前記製造方法は、
各前記垂直ナノワイヤを基板上に形成するステップと、
形成された各前記垂直ナノワイヤの各端部にソースおよびドレインの電極を作るステップであって、前記ソースおよびドレインの電極は、ナノワイヤ上に実装された各前記基本トランジスタの前記ゲート電極に関して、前記垂直ナノワイヤの伸長方向において、対称的に配置されている、ステップと、
形成された各ナノワイヤの部分を取り囲む誘電材料の層を堆積させることと、形成された各ナノワイヤの前記部分を取り囲む誘電材料の各層のまわりに導電性材料の層を堆積させることと、によってゲート電極を作るステップであって、前記導電性材料の層は、網目状に設けられて形成された前記ナノワイヤのすべてに対して共通であり、導電性材料の前記層の厚みは、前記トランジスタデバイスの前記ゲートの長さに対応する、ステップと、
前記ナノワイヤ上に実装された各前記基本トランジスタの前記ソースと前記ゲートとの間、および前記ドレインと前記ゲートとの間を誘電材料の層を使って絶縁するステップと、
を備えることを特徴とする、製造方法。 - ナノワイヤのまわりに実装された各トランジスタの前記ゲート電極に前記ソースおよびドレインの電極をセルフアライメントさせる方法を使って、前記ソースおよびドレインの電極は、前記ゲート電極に対して対称的に配置されることを特徴とする、請求項1に記載の製造方法。
- 前記誘電体を使って各ソースおよびドレインの電極を絶縁する前記ステップは、誘電材料の第1の層と誘電材料の第2の層とを堆積させることによって実行され、ゲート電極を作っている導電性材料の前記層が、誘電材料の前記第1の層の上に堆積され、誘電材料の前記第2の層が、前記ゲート電極を作っている導電性材料の前記層の上に堆積され、誘電材料の前記第1および第2の層の厚みと、前記ゲート電極を作っている導電性材料の前記層の位置とは、前記ソースおよびドレインの電極が、ナノワイヤ上に実装された各トランジスタの前記ゲート電極に対して対称的に配置されるように、選択されていることを特徴とする、請求項1に記載の製造方法。
- 誘電材料の前記第1の層の平坦度が、実質的に5nm以下の精度で画定されることを特徴とする、請求項3に記載の製造方法。
- 誘電材料の前記第1および第2の層の前記誘電材料は、流動性無機樹脂であることを特徴とする、請求項3または4に記載の製造方法。
- 前記ゲート電極を作っている導電性材料の前記層の厚みが、20nm未満であり、前記層の前記厚みが、前記ゲートの長さを画定することを特徴とする、請求項1から5のいずれか一項に記載の製造方法。
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PCT/EP2011/070979 WO2012069606A2 (fr) | 2010-11-26 | 2011-11-24 | Procede de fabrication d'un dispositif de transistor a effet de champ implemente sur un reseau de nanofils verticaux, dispositif de transistor resultant, dispositif electronique comprenant de tels dispositifs de transistors, et processeur comprenant au moins un tel dispositif electronique. |
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Families Citing this family (54)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102050561B1 (ko) * | 2012-12-18 | 2020-01-09 | 삼성디스플레이 주식회사 | 수직형 박막트랜지스터 및 이의 제조 방법 |
US8890119B2 (en) | 2012-12-18 | 2014-11-18 | Intel Corporation | Vertical nanowire transistor with axially engineered semiconductor and gate metallization |
US9054215B2 (en) | 2012-12-18 | 2015-06-09 | Intel Corporation | Patterning of vertical nanowire transistor channel and gate with directed self assembly |
US8896101B2 (en) * | 2012-12-21 | 2014-11-25 | Intel Corporation | Nonplanar III-N transistors with compositionally graded semiconductor channels |
US9041095B2 (en) * | 2013-01-24 | 2015-05-26 | Unisantis Electronics Singapore Pte. Ltd. | Vertical transistor with surrounding gate and work-function metal around upper sidewall, and method for manufacturing the same |
US9024376B2 (en) * | 2013-01-25 | 2015-05-05 | Unisantis Electronics Singapore Pte. Ltd. | Vertical transistor with dielectrically-isolated work-function metal electrodes surrounding the semiconductor pillar |
US20150053929A1 (en) * | 2013-08-22 | 2015-02-26 | Board Of Regents. The University Of Texas System | Vertical iii-v nanowire field-effect transistor using nanosphere lithography |
US10361270B2 (en) * | 2013-11-20 | 2019-07-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Nanowire MOSFET with different silicides on source and drain |
US9976913B2 (en) * | 2013-11-26 | 2018-05-22 | King Abdullah University Of Science And Technology | Thermal history devices, systems for thermal history detection, and methods for thermal history detection |
US9281363B2 (en) | 2014-04-18 | 2016-03-08 | Taiwan Semiconductor Manufacturing Company Ltd. | Circuits using gate-all-around technology |
US9653563B2 (en) * | 2014-04-18 | 2017-05-16 | Taiwan Semiconductor Manufacturing Company Limited | Connection structure for vertical gate all around (VGAA) devices on semiconductor on insulator (SOI) substrate |
EP2947045B1 (en) | 2014-05-19 | 2019-08-28 | IMEC vzw | Low defect-density vertical nanowire semiconductor structures and method for making such structures |
EP3158577A4 (en) * | 2014-06-23 | 2018-07-11 | Synopsys, Inc. | Memory cells and logic cells having transistors with different numbers of nanowires or 2d material strips |
WO2015199644A1 (en) * | 2014-06-23 | 2015-12-30 | Intel Corporation | Techniques for forming vertical transistor architectures |
US9400862B2 (en) | 2014-06-23 | 2016-07-26 | Synopsys, Inc. | Cells having transistors and interconnects including nanowires or 2D material strips |
US9698261B2 (en) * | 2014-06-30 | 2017-07-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Vertical device architecture |
US9917240B2 (en) | 2014-07-24 | 2018-03-13 | Samsung Electronics Co., Ltd. | Thermoelectric element, method of manufacturing the same and semiconductor device including the same |
US9397159B2 (en) * | 2014-09-12 | 2016-07-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Silicide region of gate-all-around transistor |
US9871111B2 (en) * | 2014-09-18 | 2018-01-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method |
JP6121386B2 (ja) * | 2014-11-14 | 2017-04-26 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッドUnisantis Electronics Singapore Pte Ltd. | 半導体装置の製造方法、及び、半導体装置 |
US9515179B2 (en) | 2015-04-20 | 2016-12-06 | Semiconductor Components Industries, Llc | Electronic devices including a III-V transistor having a homostructure and a process of forming the same |
JP5890053B2 (ja) * | 2015-04-27 | 2016-03-22 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッドUnisantis Electronics Singapore Pte Ltd. | 半導体装置の製造方法、及び、半導体装置 |
SE1530097A1 (en) | 2015-06-22 | 2016-12-23 | Method for Vertical Gate-Last Process | |
KR101765387B1 (ko) * | 2015-06-24 | 2017-08-23 | 서강대학교산학협력단 | 금속 코아 간 초미세 보이드를 가지는 나노 갭 구조체 및 이를 이용한 분자 검출 장치 및 방법, 선택적 에칭을 통한 상기 나노 갭 구조체의 제조 방법 |
US9997463B2 (en) * | 2015-07-01 | 2018-06-12 | Stmicroelectronics, Inc. | Modular interconnects for gate-all-around transistors |
JP6055883B2 (ja) * | 2015-08-20 | 2016-12-27 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッドUnisantis Electronics Singapore Pte Ltd. | 半導体装置の製造方法、及び、半導体装置 |
DE102015223524A1 (de) * | 2015-11-27 | 2017-06-01 | Robert Bosch Gmbh | Verfahren zum Herstellen von Nanostrukturen in mikromechanischen Bauteilen und mikromechanisches Bauteil |
US9761694B2 (en) | 2016-01-27 | 2017-09-12 | International Business Machines Corporation | Vertical FET with selective atomic layer deposition gate |
US9882047B2 (en) | 2016-02-01 | 2018-01-30 | International Business Machines Corporation | Self-aligned replacement metal gate spacerless vertical field effect transistor |
JP6082489B2 (ja) * | 2016-03-30 | 2017-02-15 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッドUnisantis Electronics Singapore Pte Ltd. | 半導体装置 |
JP6527835B2 (ja) * | 2016-04-06 | 2019-06-05 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッドUnisantis Electronics Singapore Pte Ltd. | 半導体装置 |
US11088033B2 (en) | 2016-09-08 | 2021-08-10 | International Business Machines Corporation | Low resistance source-drain contacts using high temperature silicides |
US10312229B2 (en) | 2016-10-28 | 2019-06-04 | Synopsys, Inc. | Memory cells including vertical nanowire transistors |
US10361128B2 (en) | 2017-01-11 | 2019-07-23 | International Business Machines Corporation | 3D vertical FET with top and bottom gate contacts |
US9935195B1 (en) | 2017-01-12 | 2018-04-03 | International Business Machines Corporation | Reduced resistance source and drain extensions in vertical field effect transistors |
CN108695382B (zh) * | 2017-04-07 | 2021-07-06 | 中芯国际集成电路制造(上海)有限公司 | 半导体装置及其制造方法 |
JP6250210B2 (ja) * | 2017-04-11 | 2017-12-20 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッドUnisantis Electronics Singapore Pte Ltd. | 半導体装置 |
US9960272B1 (en) | 2017-05-16 | 2018-05-01 | International Business Machines Corporation | Bottom contact resistance reduction on VFET |
US10020381B1 (en) | 2017-05-17 | 2018-07-10 | International Business Machines Corporation | Embedded bottom metal contact formed by a self-aligned contact process for vertical transistors |
CN110730984B (zh) * | 2017-06-08 | 2021-12-03 | 夏普株式会社 | 有源矩阵基板和显示装置 |
JP6970338B2 (ja) * | 2017-10-03 | 2021-11-24 | 富士通株式会社 | 半導体装置及び半導体装置の製造方法 |
JP6978902B2 (ja) * | 2017-11-10 | 2021-12-08 | 富士通株式会社 | 化合物半導体装置、受信機、及び化合物半導体装置の製造方法。 |
FR3074489B1 (fr) * | 2017-12-05 | 2023-04-21 | Centre Nat Rech Scient | Plateforme de nanostructures pour l’interfacage cellulaire et procede de fabrication correspondant |
JPWO2019130965A1 (ja) * | 2017-12-25 | 2021-01-14 | 株式会社ソシオネクスト | 出力回路 |
JP6954184B2 (ja) * | 2018-03-01 | 2021-10-27 | 富士通株式会社 | 半導体デバイス、受信機及び半導体デバイスの製造方法 |
WO2019175921A1 (ja) | 2018-03-12 | 2019-09-19 | 富士通株式会社 | 半導体装置及び半導体装置の製造方法 |
US11043598B2 (en) | 2018-11-30 | 2021-06-22 | International Business Machines Corporation | Vertical field effect transistor with low-resistance bottom source-drain contact |
US10892339B2 (en) | 2019-03-13 | 2021-01-12 | International Business Machines Corporation | Gate first technique in vertical transport FET using doped silicon gates with silicide |
CN110176489A (zh) * | 2019-05-14 | 2019-08-27 | 中国科学院微电子研究所 | 纳米级晶体管及其制备方法 |
US11769831B2 (en) * | 2020-09-30 | 2023-09-26 | Tokyo Electron Limited | High performance floating body VFET with dielectric core |
JPWO2022153676A1 (ja) * | 2021-01-15 | 2022-07-21 | ||
KR20220166604A (ko) * | 2021-06-10 | 2022-12-19 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 |
US11942536B2 (en) * | 2022-02-14 | 2024-03-26 | Tokyo Electron Limited | Semiconductor device having channel structure with 2D material |
JP2024114315A (ja) | 2023-02-13 | 2024-08-23 | セイコーエプソン株式会社 | 半導体装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030189202A1 (en) | 2002-04-05 | 2003-10-09 | Jun Li | Nanowire devices and methods of fabrication |
DE10250829B4 (de) * | 2002-10-31 | 2006-11-02 | Infineon Technologies Ag | Nichtflüchtige Speicherzelle, Speicherzellen-Anordnung und Verfahren zum Herstellen einer nichtflüchtigen Speicherzelle |
JP4108537B2 (ja) | 2003-05-28 | 2008-06-25 | 富士雄 舛岡 | 半導体装置 |
KR20060109956A (ko) | 2003-12-23 | 2006-10-23 | 코닌클리즈케 필립스 일렉트로닉스 엔.브이. | 이종접합을 포함하는 반도체 장치 |
JP2005197612A (ja) * | 2004-01-09 | 2005-07-21 | Sony Corp | 集積型量子細線トランジスタおよびその製造方法ならびに集積型細線トランジスタおよびその製造方法ならびに電子応用装置 |
US7230286B2 (en) * | 2005-05-23 | 2007-06-12 | International Business Machines Corporation | Vertical FET with nanowire channels and a silicided bottom contact |
EP1804286A1 (en) * | 2005-12-27 | 2007-07-04 | Interuniversitair Microelektronica Centrum | Elongate nanostructure semiconductor device |
FR2897204B1 (fr) * | 2006-02-07 | 2008-05-30 | Ecole Polytechnique Etablissem | Structure de transistor vertical et procede de fabrication |
JP2007036267A (ja) * | 2006-09-04 | 2007-02-08 | Elpida Memory Inc | Sog膜の形成方法 |
SE532485C2 (sv) * | 2007-03-27 | 2010-02-02 | Qunano Ab | Nanostruktur för laddningslagring |
US8546863B2 (en) * | 2007-04-19 | 2013-10-01 | Nxp B.V. | Nonvolatile memory cell comprising a nanowire and manufacturing method thereof |
US7892956B2 (en) * | 2007-09-24 | 2011-02-22 | International Business Machines Corporation | Methods of manufacture of vertical nanowire FET devices |
JP5252740B2 (ja) * | 2007-12-05 | 2013-07-31 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体装置 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |