JP6032254B2 - パワーモジュール用金属配線付基板、パワーモジュール及びパワーモジュール用基板、並びにパワーモジュール用金属配線付基板の製造方法 - Google Patents

パワーモジュール用金属配線付基板、パワーモジュール及びパワーモジュール用基板、並びにパワーモジュール用金属配線付基板の製造方法 Download PDF

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JP6032254B2
JP6032254B2 JP2014194674A JP2014194674A JP6032254B2 JP 6032254 B2 JP6032254 B2 JP 6032254B2 JP 2014194674 A JP2014194674 A JP 2014194674A JP 2014194674 A JP2014194674 A JP 2014194674A JP 6032254 B2 JP6032254 B2 JP 6032254B2
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Japan
Prior art keywords
polyimide resin
resin layer
substrate
layer
metal wiring
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JP2014194674A
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Japanese (ja)
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JP2015097258A5 (enrdf_load_stackoverflow
JP2015097258A (ja
Inventor
保則 長塚
保則 長塚
勝哉 坂寄
勝哉 坂寄
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Dai Nippon Printing Co Ltd
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Dai Nippon Printing Co Ltd
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Priority to JP2014194674A priority Critical patent/JP6032254B2/ja
Priority to PCT/JP2015/060515 priority patent/WO2016047181A1/ja
Publication of JP2015097258A publication Critical patent/JP2015097258A/ja
Publication of JP2015097258A5 publication Critical patent/JP2015097258A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/18—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of the types provided for in two or more different main groups of the same subclass of H10B, H10D, H10F, H10H, H10K or H10N
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/44—Manufacturing insulated metal core circuits or other insulated electrically conductive core circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Insulated Metal Substrates For Printed Circuits (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
JP2014194674A 2013-10-11 2014-09-25 パワーモジュール用金属配線付基板、パワーモジュール及びパワーモジュール用基板、並びにパワーモジュール用金属配線付基板の製造方法 Active JP6032254B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2014194674A JP6032254B2 (ja) 2013-10-11 2014-09-25 パワーモジュール用金属配線付基板、パワーモジュール及びパワーモジュール用基板、並びにパワーモジュール用金属配線付基板の製造方法
PCT/JP2015/060515 WO2016047181A1 (ja) 2014-09-25 2015-04-02 パワーモジュール用金属配線付基板、パワーモジュール及びパワーモジュール用基板、並びにパワーモジュール用金属配線付基板の製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013213524 2013-10-11
JP2013213524 2013-10-11
JP2014194674A JP6032254B2 (ja) 2013-10-11 2014-09-25 パワーモジュール用金属配線付基板、パワーモジュール及びパワーモジュール用基板、並びにパワーモジュール用金属配線付基板の製造方法

Publications (3)

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JP2015097258A JP2015097258A (ja) 2015-05-21
JP2015097258A5 JP2015097258A5 (enrdf_load_stackoverflow) 2016-06-02
JP6032254B2 true JP6032254B2 (ja) 2016-11-24

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JP (1) JP6032254B2 (enrdf_load_stackoverflow)
WO (1) WO2016047181A1 (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6734531B2 (ja) * 2016-03-09 2020-08-05 富士通株式会社 電子部品の製造方法、半導体装置の製造方法、及び半導体装置
WO2018115408A1 (en) * 2016-12-23 2018-06-28 Atotech Deutschland Gmbh Method of forming a solderable solder deposit on a contact pad
JP7248394B2 (ja) * 2017-09-29 2023-03-29 日鉄ケミカル＆マテリアル株式会社 ポリイミドフィルム及び金属張積層体
JP7115868B2 (ja) * 2018-02-23 2022-08-09 三井化学株式会社 装置
JP7633666B2 (ja) 2021-06-21 2025-02-20 株式会社ピーアイ技術研究所 感光性ポリイミド樹脂組成物

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3255315B2 (ja) * 1992-04-20 2002-02-12 電気化学工業株式会社 電気絶縁材及びそれを用いた回路基板
JP3544757B2 (ja) * 1995-08-28 2004-07-21 株式会社ルネサステクノロジ 半導体装置及びその製造方法
JP2007288054A (ja) * 2006-04-19 2007-11-01 Toyota Motor Corp パワーモジュール
WO2012029165A1 (ja) * 2010-09-02 2012-03-08 トヨタ自動車株式会社 半導体モジュール
JP6094044B2 (ja) * 2011-03-23 2017-03-15 大日本印刷株式会社 放熱基板およびそれを用いた素子
JP5961970B2 (ja) * 2011-10-06 2016-08-03 大日本印刷株式会社 積層体およびそれを用いた素子
JP5970865B2 (ja) * 2012-03-05 2016-08-17 大日本印刷株式会社 薄膜素子用基板、薄膜素子、有機エレクトロルミネッセンス表示装置、および電子ペーパー
JP2014154718A (ja) * 2013-02-08 2014-08-25 Nitto Denko Corp 半導体装置の製造方法

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WO2016047181A1 (ja) 2016-03-31

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