JP6025722B2 - 電気的な偏りを調整するためのプラズマ処理装置及びライナーアセンブリ、プラズマ処理方法 - Google Patents
電気的な偏りを調整するためのプラズマ処理装置及びライナーアセンブリ、プラズマ処理方法 Download PDFInfo
- Publication number
- JP6025722B2 JP6025722B2 JP2013520730A JP2013520730A JP6025722B2 JP 6025722 B2 JP6025722 B2 JP 6025722B2 JP 2013520730 A JP2013520730 A JP 2013520730A JP 2013520730 A JP2013520730 A JP 2013520730A JP 6025722 B2 JP6025722 B2 JP 6025722B2
- Authority
- JP
- Japan
- Prior art keywords
- plasma processing
- processing apparatus
- liner assembly
- slots
- liner
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32495—Means for protecting the vessel against plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical Vapour Deposition (AREA)
- Electromagnetism (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US36646210P | 2010-07-21 | 2010-07-21 | |
| US61/366,462 | 2010-07-21 | ||
| PCT/US2011/043083 WO2012012200A1 (en) | 2010-07-21 | 2011-07-06 | Plasma processing apparatus and liner assembly for tuning electrical skews |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013539159A JP2013539159A (ja) | 2013-10-17 |
| JP2013539159A5 JP2013539159A5 (enExample) | 2016-02-18 |
| JP6025722B2 true JP6025722B2 (ja) | 2016-11-16 |
Family
ID=45492720
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013520730A Expired - Fee Related JP6025722B2 (ja) | 2010-07-21 | 2011-07-06 | 電気的な偏りを調整するためのプラズマ処理装置及びライナーアセンブリ、プラズマ処理方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US20120018402A1 (enExample) |
| JP (1) | JP6025722B2 (enExample) |
| KR (2) | KR20130092387A (enExample) |
| CN (2) | CN102860138A (enExample) |
| TW (1) | TWI502617B (enExample) |
| WO (1) | WO2012012200A1 (enExample) |
Families Citing this family (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201325326A (zh) | 2011-10-05 | 2013-06-16 | Applied Materials Inc | 電漿處理設備及其基板支撐組件 |
| US9653267B2 (en) | 2011-10-06 | 2017-05-16 | Applied Materials, Inc. | Temperature controlled chamber liner |
| SG10201604037TA (en) * | 2011-11-24 | 2016-07-28 | Lam Res Corp | Symmetric rf return path liner |
| US20140053984A1 (en) * | 2012-08-27 | 2014-02-27 | Hyun Ho Doh | Symmetric return liner for modulating azimuthal non-uniformity in a plasma processing system |
| KR20210003959A (ko) * | 2013-03-15 | 2021-01-12 | 어플라이드 머티어리얼스, 인코포레이티드 | 반도체 프로세싱을 위한 챔버 디자인 |
| SG11201508512PA (en) * | 2013-05-23 | 2015-12-30 | Applied Materials Inc | A coated liner assembly for a semiconductor processing chamber |
| JP6307825B2 (ja) * | 2013-09-25 | 2018-04-11 | 日新イオン機器株式会社 | 防着板支持部材、プラズマ源およびイオンビーム照射装置 |
| US11939477B2 (en) | 2014-01-30 | 2024-03-26 | Monolith Materials, Inc. | High temperature heat integration method of making carbon black |
| US10100200B2 (en) | 2014-01-30 | 2018-10-16 | Monolith Materials, Inc. | Use of feedstock in carbon black plasma process |
| US10138378B2 (en) | 2014-01-30 | 2018-11-27 | Monolith Materials, Inc. | Plasma gas throat assembly and method |
| US10370539B2 (en) | 2014-01-30 | 2019-08-06 | Monolith Materials, Inc. | System for high temperature chemical processing |
| KR102497660B1 (ko) | 2014-01-31 | 2023-02-07 | 모놀리스 머티어리얼스 인코포레이티드 | 플라즈마 토치 설계 |
| EP3146368A1 (en) | 2014-05-23 | 2017-03-29 | Corning Incorporated | Low contrast anti-reflection articles with reduced scratch and fingerprint visibility |
| KR102705340B1 (ko) | 2015-02-03 | 2024-09-09 | 모놀리스 머티어리얼스 인코포레이티드 | 카본 블랙 생성 시스템 |
| WO2016126600A1 (en) * | 2015-02-03 | 2016-08-11 | Monolith Materials, Inc. | Regenerative cooling method and apparatus |
| JP1546799S (enExample) * | 2015-06-12 | 2016-03-28 | ||
| CA3032246C (en) | 2015-07-29 | 2023-12-12 | Monolith Materials, Inc. | Dc plasma torch electrical power design method and apparatus |
| EP3347306A4 (en) | 2015-09-09 | 2019-04-17 | Monolith Materials, Inc. | CIRCULAR SINGLE-LAYER GRAPH |
| CA3034212C (en) | 2015-09-14 | 2023-08-01 | Monolith Materials, Inc. | Carbon black from natural gas |
| JP1564934S (enExample) * | 2016-02-26 | 2016-12-05 | ||
| MX2018013162A (es) | 2016-04-29 | 2019-07-04 | Monolith Mat Inc | Adicion de calor secundario para el proceso y aparato de produccion de particulas. |
| ES2983689T3 (es) | 2016-04-29 | 2024-10-24 | Monolith Mat Inc | Método y aparato del aguijón de la antorcha |
| WO2017215806A1 (en) * | 2016-06-15 | 2017-12-21 | Evatec Ag | Vacuum treatment chamber and method of manufacturing a vacuum treated plate-shaped substrate |
| WO2018165483A1 (en) | 2017-03-08 | 2018-09-13 | Monolith Materials, Inc. | Systems and methods of making carbon particles with thermal transfer gas |
| CN115746586A (zh) | 2017-04-20 | 2023-03-07 | 巨石材料公司 | 颗粒系统和方法 |
| USD875054S1 (en) * | 2017-04-28 | 2020-02-11 | Applied Materials, Inc. | Plasma connector liner |
| USD875055S1 (en) * | 2017-04-28 | 2020-02-11 | Applied Materials, Inc. | Plasma connector liner |
| USD875053S1 (en) * | 2017-04-28 | 2020-02-11 | Applied Materials, Inc. | Plasma connector liner |
| CA3074220A1 (en) | 2017-08-28 | 2019-03-07 | Monolith Materials, Inc. | Systems and methods for particle generation |
| CA3074216A1 (en) | 2017-08-28 | 2019-03-07 | Monolith Materials, Inc. | Particle systems and methods |
| WO2019084200A1 (en) | 2017-10-24 | 2019-05-02 | Monolith Materials, Inc. | PARTICULAR SYSTEMS AND METHODS |
| JP7089987B2 (ja) * | 2018-08-22 | 2022-06-23 | 株式会社日本製鋼所 | 原子層堆積装置 |
| CN208835019U (zh) * | 2018-11-12 | 2019-05-07 | 江苏鲁汶仪器有限公司 | 一种反应腔内衬 |
| CN111312575B (zh) * | 2018-12-12 | 2022-09-16 | 北京北方华创微电子装备有限公司 | 内衬组件及反应腔室 |
| US20220223383A1 (en) * | 2019-04-05 | 2022-07-14 | Applied Materials, Inc. | Process system with variable flow valve |
| KR102746083B1 (ko) | 2019-06-21 | 2024-12-26 | 삼성전자주식회사 | 플라즈마 처리 장치 및 이를 이용한 반도체 소자 제조 방법 |
| KR102262026B1 (ko) * | 2019-07-18 | 2021-06-07 | 세메스 주식회사 | 기판 처리 장치 |
| JP7699600B2 (ja) * | 2020-02-10 | 2025-06-27 | ラム リサーチ コーポレーション | 傾斜制御のためのエッジプラズマ密度の調整可能性 |
| US12100576B2 (en) * | 2020-04-30 | 2024-09-24 | Applied Materials, Inc. | Metal oxide preclean chamber with improved selectivity and flow conductance |
| US11499223B2 (en) | 2020-12-10 | 2022-11-15 | Applied Materials, Inc. | Continuous liner for use in a processing chamber |
Family Cites Families (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5401319A (en) * | 1992-08-27 | 1995-03-28 | Applied Materials, Inc. | Lid and door for a vacuum chamber and pretreatment therefor |
| US5460684A (en) * | 1992-12-04 | 1995-10-24 | Tokyo Electron Limited | Stage having electrostatic chuck and plasma processing apparatus using same |
| US5366585A (en) * | 1993-01-28 | 1994-11-22 | Applied Materials, Inc. | Method and apparatus for protection of conductive surfaces in a plasma processing reactor |
| EP0624896B1 (en) * | 1993-05-13 | 1999-09-22 | Applied Materials, Inc. | Contamination control in plasma contouring the plasma sheath using materials of differing rf impedances |
| US5641375A (en) * | 1994-08-15 | 1997-06-24 | Applied Materials, Inc. | Plasma etching reactor with surface protection means against erosion of walls |
| US5891350A (en) * | 1994-12-15 | 1999-04-06 | Applied Materials, Inc. | Adjusting DC bias voltage in plasma chambers |
| JP3257328B2 (ja) * | 1995-03-16 | 2002-02-18 | 株式会社日立製作所 | プラズマ処理装置及びプラズマ処理方法 |
| US5763851A (en) * | 1995-11-27 | 1998-06-09 | Applied Materials, Inc. | Slotted RF coil shield for plasma deposition system |
| JP2954028B2 (ja) * | 1996-08-16 | 1999-09-27 | 山形日本電気株式会社 | スパッタリング装置 |
| US6251216B1 (en) * | 1997-12-17 | 2001-06-26 | Matsushita Electronics Corporation | Apparatus and method for plasma processing |
| US6129808A (en) * | 1998-03-31 | 2000-10-10 | Lam Research Corporation | Low contamination high density plasma etch chambers and methods for making the same |
| US6074953A (en) * | 1998-08-28 | 2000-06-13 | Micron Technology, Inc. | Dual-source plasma etchers, dual-source plasma etching methods, and methods of forming planar coil dual-source plasma etchers |
| JP4437351B2 (ja) * | 2000-01-14 | 2010-03-24 | キヤノンアネルバ株式会社 | プラズマエッチング装置 |
| US20020069970A1 (en) * | 2000-03-07 | 2002-06-13 | Applied Materials, Inc. | Temperature controlled semiconductor processing chamber liner |
| JP2002151473A (ja) * | 2000-11-13 | 2002-05-24 | Tokyo Electron Ltd | プラズマ処理装置及びその組立方法 |
| US7374636B2 (en) * | 2001-07-06 | 2008-05-20 | Applied Materials, Inc. | Method and apparatus for providing uniform plasma in a magnetic field enhanced plasma reactor |
| JP4030766B2 (ja) * | 2002-01-30 | 2008-01-09 | アルプス電気株式会社 | プラズマ処理装置 |
| JP2004079557A (ja) * | 2002-08-09 | 2004-03-11 | Hitachi High-Technologies Corp | プラズマ処理装置及びプラズマ処理方法 |
| USD491963S1 (en) * | 2002-11-20 | 2004-06-22 | Tokyo Electron Limited | Inner wall shield for a process chamber for manufacturing semiconductors |
| JP4079834B2 (ja) * | 2003-06-04 | 2008-04-23 | 東京エレクトロン株式会社 | プラズマ処理方法 |
| WO2005015613A2 (en) * | 2003-08-07 | 2005-02-17 | Sundew Technologies, Llc | Perimeter partition-valve with protected seals |
| JP4149427B2 (ja) * | 2004-10-07 | 2008-09-10 | 東京エレクトロン株式会社 | マイクロ波プラズマ処理装置 |
| JP4460418B2 (ja) * | 2004-10-13 | 2010-05-12 | 東京エレクトロン株式会社 | シールド体および真空処理装置 |
| US20060086458A1 (en) * | 2004-10-25 | 2006-04-27 | Kim Hong J | Ceramic materials in plasma tool environments |
| KR101247198B1 (ko) * | 2005-09-09 | 2013-03-25 | 가부시키가이샤 알박 | 이온원 및 플라스마 처리장치 |
| JP2007234770A (ja) * | 2006-02-28 | 2007-09-13 | Tokyo Electron Ltd | プラズマエッチング方法およびコンピュータ読み取り可能な記憶媒体 |
| CN100573816C (zh) * | 2006-12-06 | 2009-12-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 反应腔室内衬及包含该内衬的反应腔室 |
| CN100587904C (zh) * | 2006-12-11 | 2010-02-03 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 反应腔室内衬及包含该内衬的反应腔室 |
| US8444926B2 (en) * | 2007-01-30 | 2013-05-21 | Applied Materials, Inc. | Processing chamber with heated chamber liner |
| JP4874870B2 (ja) * | 2007-05-29 | 2012-02-15 | 東京エレクトロン株式会社 | 基板処理システム及び基板処理装置 |
| US9184072B2 (en) * | 2007-07-27 | 2015-11-10 | Mattson Technology, Inc. | Advanced multi-workpiece processing chamber |
| JP5329072B2 (ja) * | 2007-12-03 | 2013-10-30 | 東京エレクトロン株式会社 | 処理容器およびプラズマ処理装置 |
| JP5317509B2 (ja) * | 2008-03-27 | 2013-10-16 | 東京エレクトロン株式会社 | プラズマ処理装置および方法 |
| US7987814B2 (en) * | 2008-04-07 | 2011-08-02 | Applied Materials, Inc. | Lower liner with integrated flow equalizer and improved conductance |
| KR101013511B1 (ko) * | 2008-08-12 | 2011-02-10 | 주식회사 맥시스 | 라이너 어셈블리 및 이를 구비하는 플라즈마 처리 장치 |
| TW201325326A (zh) * | 2011-10-05 | 2013-06-16 | Applied Materials Inc | 電漿處理設備及其基板支撐組件 |
| US9653267B2 (en) * | 2011-10-06 | 2017-05-16 | Applied Materials, Inc. | Temperature controlled chamber liner |
-
2011
- 2011-06-27 TW TW100122473A patent/TWI502617B/zh not_active IP Right Cessation
- 2011-07-06 JP JP2013520730A patent/JP6025722B2/ja not_active Expired - Fee Related
- 2011-07-06 KR KR1020127027857A patent/KR20130092387A/ko not_active Ceased
- 2011-07-06 CN CN2011800212014A patent/CN102860138A/zh active Pending
- 2011-07-06 WO PCT/US2011/043083 patent/WO2012012200A1/en not_active Ceased
- 2011-07-06 KR KR1020187007230A patent/KR101970615B1/ko not_active Expired - Fee Related
- 2011-07-06 CN CN201810343864.1A patent/CN108538695B/zh not_active Expired - Fee Related
- 2011-07-17 US US13/184,562 patent/US20120018402A1/en not_active Abandoned
-
2015
- 2015-06-12 US US14/738,324 patent/US10242847B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US10242847B2 (en) | 2019-03-26 |
| TW201205639A (en) | 2012-02-01 |
| TWI502617B (zh) | 2015-10-01 |
| KR20180030729A (ko) | 2018-03-23 |
| US20120018402A1 (en) | 2012-01-26 |
| JP2013539159A (ja) | 2013-10-17 |
| KR101970615B1 (ko) | 2019-04-19 |
| US20150279633A1 (en) | 2015-10-01 |
| KR20130092387A (ko) | 2013-08-20 |
| WO2012012200A1 (en) | 2012-01-26 |
| CN108538695A (zh) | 2018-09-14 |
| CN102860138A (zh) | 2013-01-02 |
| CN108538695B (zh) | 2021-01-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6025722B2 (ja) | 電気的な偏りを調整するためのプラズマ処理装置及びライナーアセンブリ、プラズマ処理方法 | |
| JP7328280B2 (ja) | 改良されたフロー均一性/ガスコンダクタンスを備えた可変処理容積に対処するための対称チャンバ本体設計アーキテクチャ | |
| US20180142354A1 (en) | Recursive pumping for symmetrical gas exhaust to control critical dimension uniformity in plasma reactors | |
| JP2025069202A (ja) | 対称プラズマ処理チャンバ | |
| US8778813B2 (en) | Confined process volume PECVD chamber | |
| US8038834B2 (en) | Method and system for controlling radical distribution | |
| TWI840341B (zh) | 用於基板支撐件的處理套組 | |
| US20190148121A1 (en) | Inline dps chamber hardware design to enable axis symmetry for improved flow conductance and uniformity | |
| CN103069560A (zh) | 用于控制工艺腔室中的气体流动的设备 | |
| US7880392B2 (en) | Plasma producing method and apparatus as well as plasma processing apparatus | |
| JP6643950B2 (ja) | プラズマ処理方法 | |
| TW202312221A (zh) | 混合電漿源陣列 | |
| TW201338012A (zh) | 用於等離子體處理裝置的可調節約束裝置 | |
| TWI770144B (zh) | 電漿處理裝置 | |
| KR101173643B1 (ko) | 다중 플라즈마 발생 영역을 갖는 플라즈마 반응기 | |
| US20100224128A1 (en) | Semiconductor manufacturing apparatus | |
| KR20070090470A (ko) | 균일한 가스분사를 위한 가스분배판 | |
| KR101798376B1 (ko) | 유도결합 플라즈마 처리장치의 유전체창 | |
| KR20160069546A (ko) | 기판처리장치 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20140702 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20150605 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150609 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20150907 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20151008 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20151105 |
|
| A524 | Written submission of copy of amendment under article 19 pct |
Free format text: JAPANESE INTERMEDIATE CODE: A524 Effective date: 20151208 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20151222 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160405 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20160704 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160707 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160913 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20161011 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 6025722 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |