CN102860138A - 用于调整电偏斜的等离子体处理装置与衬管组件 - Google Patents

用于调整电偏斜的等离子体处理装置与衬管组件 Download PDF

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Publication number
CN102860138A
CN102860138A CN2011800212014A CN201180021201A CN102860138A CN 102860138 A CN102860138 A CN 102860138A CN 2011800212014 A CN2011800212014 A CN 2011800212014A CN 201180021201 A CN201180021201 A CN 201180021201A CN 102860138 A CN102860138 A CN 102860138A
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China
Prior art keywords
slots
liner assembly
plasma processing
chamber
plasma
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CN2011800212014A
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English (en)
Chinese (zh)
Inventor
詹姆斯·D·卡达希
陈智刚
沙希德·劳夫
肯尼思·S·柯林斯
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Applied Materials Inc
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Applied Materials Inc
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Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to CN201810343864.1A priority Critical patent/CN108538695B/zh
Publication of CN102860138A publication Critical patent/CN102860138A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electromagnetism (AREA)
  • Plasma Technology (AREA)
CN2011800212014A 2010-07-21 2011-07-06 用于调整电偏斜的等离子体处理装置与衬管组件 Pending CN102860138A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201810343864.1A CN108538695B (zh) 2010-07-21 2011-07-06 衬管组件、等离子体处理装置和等离子体处理基板的方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US36646210P 2010-07-21 2010-07-21
US61/366,462 2010-07-21
PCT/US2011/043083 WO2012012200A1 (en) 2010-07-21 2011-07-06 Plasma processing apparatus and liner assembly for tuning electrical skews

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201810343864.1A Division CN108538695B (zh) 2010-07-21 2011-07-06 衬管组件、等离子体处理装置和等离子体处理基板的方法

Publications (1)

Publication Number Publication Date
CN102860138A true CN102860138A (zh) 2013-01-02

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
CN2011800212014A Pending CN102860138A (zh) 2010-07-21 2011-07-06 用于调整电偏斜的等离子体处理装置与衬管组件
CN201810343864.1A Expired - Fee Related CN108538695B (zh) 2010-07-21 2011-07-06 衬管组件、等离子体处理装置和等离子体处理基板的方法

Family Applications After (1)

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CN201810343864.1A Expired - Fee Related CN108538695B (zh) 2010-07-21 2011-07-06 衬管组件、等离子体处理装置和等离子体处理基板的方法

Country Status (6)

Country Link
US (2) US20120018402A1 (enExample)
JP (1) JP6025722B2 (enExample)
KR (2) KR20130092387A (enExample)
CN (2) CN102860138A (enExample)
TW (1) TWI502617B (enExample)
WO (1) WO2012012200A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111312575A (zh) * 2018-12-12 2020-06-19 北京北方华创微电子装备有限公司 内衬组件及反应腔室
CN114946009A (zh) * 2020-04-30 2022-08-26 应用材料公司 具有改进的选择性和流导性的金属氧化物预清洁腔室

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201325326A (zh) 2011-10-05 2013-06-16 Applied Materials Inc 電漿處理設備及其基板支撐組件
US9653267B2 (en) 2011-10-06 2017-05-16 Applied Materials, Inc. Temperature controlled chamber liner
SG10201604037TA (en) * 2011-11-24 2016-07-28 Lam Res Corp Symmetric rf return path liner
US20140053984A1 (en) * 2012-08-27 2014-02-27 Hyun Ho Doh Symmetric return liner for modulating azimuthal non-uniformity in a plasma processing system
KR20210003959A (ko) * 2013-03-15 2021-01-12 어플라이드 머티어리얼스, 인코포레이티드 반도체 프로세싱을 위한 챔버 디자인
SG11201508512PA (en) * 2013-05-23 2015-12-30 Applied Materials Inc A coated liner assembly for a semiconductor processing chamber
JP6307825B2 (ja) * 2013-09-25 2018-04-11 日新イオン機器株式会社 防着板支持部材、プラズマ源およびイオンビーム照射装置
US11939477B2 (en) 2014-01-30 2024-03-26 Monolith Materials, Inc. High temperature heat integration method of making carbon black
US10100200B2 (en) 2014-01-30 2018-10-16 Monolith Materials, Inc. Use of feedstock in carbon black plasma process
US10138378B2 (en) 2014-01-30 2018-11-27 Monolith Materials, Inc. Plasma gas throat assembly and method
US10370539B2 (en) 2014-01-30 2019-08-06 Monolith Materials, Inc. System for high temperature chemical processing
KR102497660B1 (ko) 2014-01-31 2023-02-07 모놀리스 머티어리얼스 인코포레이티드 플라즈마 토치 설계
EP3146368A1 (en) 2014-05-23 2017-03-29 Corning Incorporated Low contrast anti-reflection articles with reduced scratch and fingerprint visibility
KR102705340B1 (ko) 2015-02-03 2024-09-09 모놀리스 머티어리얼스 인코포레이티드 카본 블랙 생성 시스템
WO2016126600A1 (en) * 2015-02-03 2016-08-11 Monolith Materials, Inc. Regenerative cooling method and apparatus
JP1546799S (enExample) * 2015-06-12 2016-03-28
CA3032246C (en) 2015-07-29 2023-12-12 Monolith Materials, Inc. Dc plasma torch electrical power design method and apparatus
EP3347306A4 (en) 2015-09-09 2019-04-17 Monolith Materials, Inc. CIRCULAR SINGLE-LAYER GRAPH
CA3034212C (en) 2015-09-14 2023-08-01 Monolith Materials, Inc. Carbon black from natural gas
JP1564934S (enExample) * 2016-02-26 2016-12-05
MX2018013162A (es) 2016-04-29 2019-07-04 Monolith Mat Inc Adicion de calor secundario para el proceso y aparato de produccion de particulas.
ES2983689T3 (es) 2016-04-29 2024-10-24 Monolith Mat Inc Método y aparato del aguijón de la antorcha
WO2017215806A1 (en) * 2016-06-15 2017-12-21 Evatec Ag Vacuum treatment chamber and method of manufacturing a vacuum treated plate-shaped substrate
WO2018165483A1 (en) 2017-03-08 2018-09-13 Monolith Materials, Inc. Systems and methods of making carbon particles with thermal transfer gas
CN115746586A (zh) 2017-04-20 2023-03-07 巨石材料公司 颗粒系统和方法
USD875054S1 (en) * 2017-04-28 2020-02-11 Applied Materials, Inc. Plasma connector liner
USD875055S1 (en) * 2017-04-28 2020-02-11 Applied Materials, Inc. Plasma connector liner
USD875053S1 (en) * 2017-04-28 2020-02-11 Applied Materials, Inc. Plasma connector liner
CA3074220A1 (en) 2017-08-28 2019-03-07 Monolith Materials, Inc. Systems and methods for particle generation
CA3074216A1 (en) 2017-08-28 2019-03-07 Monolith Materials, Inc. Particle systems and methods
WO2019084200A1 (en) 2017-10-24 2019-05-02 Monolith Materials, Inc. PARTICULAR SYSTEMS AND METHODS
JP7089987B2 (ja) * 2018-08-22 2022-06-23 株式会社日本製鋼所 原子層堆積装置
CN208835019U (zh) * 2018-11-12 2019-05-07 江苏鲁汶仪器有限公司 一种反应腔内衬
US20220223383A1 (en) * 2019-04-05 2022-07-14 Applied Materials, Inc. Process system with variable flow valve
KR102746083B1 (ko) 2019-06-21 2024-12-26 삼성전자주식회사 플라즈마 처리 장치 및 이를 이용한 반도체 소자 제조 방법
KR102262026B1 (ko) * 2019-07-18 2021-06-07 세메스 주식회사 기판 처리 장치
JP7699600B2 (ja) * 2020-02-10 2025-06-27 ラム リサーチ コーポレーション 傾斜制御のためのエッジプラズマ密度の調整可能性
US11499223B2 (en) 2020-12-10 2022-11-15 Applied Materials, Inc. Continuous liner for use in a processing chamber

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5366585A (en) * 1993-01-28 1994-11-22 Applied Materials, Inc. Method and apparatus for protection of conductive surfaces in a plasma processing reactor
US5460684A (en) * 1992-12-04 1995-10-24 Tokyo Electron Limited Stage having electrostatic chuck and plasma processing apparatus using same
US5494523A (en) * 1993-05-13 1996-02-27 Applied Materials, Inc. Controlling plasma particulates by contouring the plasma sheath using materials of differing RF impedances
CN1319247A (zh) * 1998-09-25 2001-10-24 兰姆研究公司 低污染、高密度等离子蚀刻腔体及其加工方法
US20070051312A1 (en) * 2003-08-07 2007-03-08 Ofer Sneh Perimeter partition-valve with protected seals and associated small size process chambers and multiple chamber systems
CN101036420A (zh) * 2004-10-07 2007-09-12 东京毅力科创株式会社 微波等离子体处理装置
CN101197249A (zh) * 2006-12-06 2008-06-11 北京北方微电子基地设备工艺研究中心有限责任公司 反应腔室内衬及包含该内衬的反应腔室
CN101202206A (zh) * 2006-12-11 2008-06-18 北京北方微电子基地设备工艺研究中心有限责任公司 反应腔室内衬及包含该内衬的反应腔室
CN101315877A (zh) * 2007-05-29 2008-12-03 东京毅力科创株式会社 基板处理系统以及基板处理装置
CN101452805A (zh) * 2007-12-03 2009-06-10 东京毅力科创株式会社 处理容器以及等离子体处理装置
US20090250169A1 (en) * 2008-04-07 2009-10-08 Carducci James D Lower liner with integrated flow equalizer and improved conductance

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5401319A (en) * 1992-08-27 1995-03-28 Applied Materials, Inc. Lid and door for a vacuum chamber and pretreatment therefor
US5641375A (en) * 1994-08-15 1997-06-24 Applied Materials, Inc. Plasma etching reactor with surface protection means against erosion of walls
US5891350A (en) * 1994-12-15 1999-04-06 Applied Materials, Inc. Adjusting DC bias voltage in plasma chambers
JP3257328B2 (ja) * 1995-03-16 2002-02-18 株式会社日立製作所 プラズマ処理装置及びプラズマ処理方法
US5763851A (en) * 1995-11-27 1998-06-09 Applied Materials, Inc. Slotted RF coil shield for plasma deposition system
JP2954028B2 (ja) * 1996-08-16 1999-09-27 山形日本電気株式会社 スパッタリング装置
US6251216B1 (en) * 1997-12-17 2001-06-26 Matsushita Electronics Corporation Apparatus and method for plasma processing
US6074953A (en) * 1998-08-28 2000-06-13 Micron Technology, Inc. Dual-source plasma etchers, dual-source plasma etching methods, and methods of forming planar coil dual-source plasma etchers
JP4437351B2 (ja) * 2000-01-14 2010-03-24 キヤノンアネルバ株式会社 プラズマエッチング装置
US20020069970A1 (en) * 2000-03-07 2002-06-13 Applied Materials, Inc. Temperature controlled semiconductor processing chamber liner
JP2002151473A (ja) * 2000-11-13 2002-05-24 Tokyo Electron Ltd プラズマ処理装置及びその組立方法
US7374636B2 (en) * 2001-07-06 2008-05-20 Applied Materials, Inc. Method and apparatus for providing uniform plasma in a magnetic field enhanced plasma reactor
JP4030766B2 (ja) * 2002-01-30 2008-01-09 アルプス電気株式会社 プラズマ処理装置
JP2004079557A (ja) * 2002-08-09 2004-03-11 Hitachi High-Technologies Corp プラズマ処理装置及びプラズマ処理方法
USD491963S1 (en) * 2002-11-20 2004-06-22 Tokyo Electron Limited Inner wall shield for a process chamber for manufacturing semiconductors
JP4079834B2 (ja) * 2003-06-04 2008-04-23 東京エレクトロン株式会社 プラズマ処理方法
JP4460418B2 (ja) * 2004-10-13 2010-05-12 東京エレクトロン株式会社 シールド体および真空処理装置
US20060086458A1 (en) * 2004-10-25 2006-04-27 Kim Hong J Ceramic materials in plasma tool environments
KR101247198B1 (ko) * 2005-09-09 2013-03-25 가부시키가이샤 알박 이온원 및 플라스마 처리장치
JP2007234770A (ja) * 2006-02-28 2007-09-13 Tokyo Electron Ltd プラズマエッチング方法およびコンピュータ読み取り可能な記憶媒体
US8444926B2 (en) * 2007-01-30 2013-05-21 Applied Materials, Inc. Processing chamber with heated chamber liner
US9184072B2 (en) * 2007-07-27 2015-11-10 Mattson Technology, Inc. Advanced multi-workpiece processing chamber
JP5317509B2 (ja) * 2008-03-27 2013-10-16 東京エレクトロン株式会社 プラズマ処理装置および方法
KR101013511B1 (ko) * 2008-08-12 2011-02-10 주식회사 맥시스 라이너 어셈블리 및 이를 구비하는 플라즈마 처리 장치
TW201325326A (zh) * 2011-10-05 2013-06-16 Applied Materials Inc 電漿處理設備及其基板支撐組件
US9653267B2 (en) * 2011-10-06 2017-05-16 Applied Materials, Inc. Temperature controlled chamber liner

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5460684A (en) * 1992-12-04 1995-10-24 Tokyo Electron Limited Stage having electrostatic chuck and plasma processing apparatus using same
US5366585A (en) * 1993-01-28 1994-11-22 Applied Materials, Inc. Method and apparatus for protection of conductive surfaces in a plasma processing reactor
US5494523A (en) * 1993-05-13 1996-02-27 Applied Materials, Inc. Controlling plasma particulates by contouring the plasma sheath using materials of differing RF impedances
CN1319247A (zh) * 1998-09-25 2001-10-24 兰姆研究公司 低污染、高密度等离子蚀刻腔体及其加工方法
US20070051312A1 (en) * 2003-08-07 2007-03-08 Ofer Sneh Perimeter partition-valve with protected seals and associated small size process chambers and multiple chamber systems
CN101036420A (zh) * 2004-10-07 2007-09-12 东京毅力科创株式会社 微波等离子体处理装置
CN101197249A (zh) * 2006-12-06 2008-06-11 北京北方微电子基地设备工艺研究中心有限责任公司 反应腔室内衬及包含该内衬的反应腔室
CN101202206A (zh) * 2006-12-11 2008-06-18 北京北方微电子基地设备工艺研究中心有限责任公司 反应腔室内衬及包含该内衬的反应腔室
CN101315877A (zh) * 2007-05-29 2008-12-03 东京毅力科创株式会社 基板处理系统以及基板处理装置
CN101452805A (zh) * 2007-12-03 2009-06-10 东京毅力科创株式会社 处理容器以及等离子体处理装置
US20090250169A1 (en) * 2008-04-07 2009-10-08 Carducci James D Lower liner with integrated flow equalizer and improved conductance

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111312575A (zh) * 2018-12-12 2020-06-19 北京北方华创微电子装备有限公司 内衬组件及反应腔室
CN111312575B (zh) * 2018-12-12 2022-09-16 北京北方华创微电子装备有限公司 内衬组件及反应腔室
CN114946009A (zh) * 2020-04-30 2022-08-26 应用材料公司 具有改进的选择性和流导性的金属氧化物预清洁腔室

Also Published As

Publication number Publication date
JP6025722B2 (ja) 2016-11-16
US10242847B2 (en) 2019-03-26
TW201205639A (en) 2012-02-01
TWI502617B (zh) 2015-10-01
KR20180030729A (ko) 2018-03-23
US20120018402A1 (en) 2012-01-26
JP2013539159A (ja) 2013-10-17
KR101970615B1 (ko) 2019-04-19
US20150279633A1 (en) 2015-10-01
KR20130092387A (ko) 2013-08-20
WO2012012200A1 (en) 2012-01-26
CN108538695A (zh) 2018-09-14
CN108538695B (zh) 2021-01-29

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Application publication date: 20130102