TWI502617B - 用於調整電偏斜的方法、電漿處理裝置與襯管組件 - Google Patents
用於調整電偏斜的方法、電漿處理裝置與襯管組件 Download PDFInfo
- Publication number
- TWI502617B TWI502617B TW100122473A TW100122473A TWI502617B TW I502617 B TWI502617 B TW I502617B TW 100122473 A TW100122473 A TW 100122473A TW 100122473 A TW100122473 A TW 100122473A TW I502617 B TWI502617 B TW I502617B
- Authority
- TW
- Taiwan
- Prior art keywords
- liner assembly
- slots
- plasma
- liner
- processing apparatus
- Prior art date
Links
- 238000012545 processing Methods 0.000 title claims description 51
- 238000000034 method Methods 0.000 title claims description 42
- 239000000758 substrate Substances 0.000 claims description 43
- 239000007789 gas Substances 0.000 claims description 19
- 238000005240 physical vapour deposition Methods 0.000 claims description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 5
- 239000002826 coolant Substances 0.000 claims description 4
- 238000005468 ion implantation Methods 0.000 claims description 2
- 238000001020 plasma etching Methods 0.000 claims description 2
- 238000000429 assembly Methods 0.000 claims 1
- 230000000712 assembly Effects 0.000 claims 1
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 238000009826 distribution Methods 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 239000012212 insulator Substances 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000005672 electromagnetic field Effects 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32495—Means for protecting the vessel against plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical Vapour Deposition (AREA)
- Electromagnetism (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US36646210P | 2010-07-21 | 2010-07-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201205639A TW201205639A (en) | 2012-02-01 |
| TWI502617B true TWI502617B (zh) | 2015-10-01 |
Family
ID=45492720
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100122473A TWI502617B (zh) | 2010-07-21 | 2011-06-27 | 用於調整電偏斜的方法、電漿處理裝置與襯管組件 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US20120018402A1 (enExample) |
| JP (1) | JP6025722B2 (enExample) |
| KR (2) | KR20130092387A (enExample) |
| CN (2) | CN102860138A (enExample) |
| TW (1) | TWI502617B (enExample) |
| WO (1) | WO2012012200A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI762897B (zh) * | 2019-04-05 | 2022-05-01 | 美商應用材料股份有限公司 | 具有可變流量閥的處理系統 |
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| TW201325326A (zh) | 2011-10-05 | 2013-06-16 | Applied Materials Inc | 電漿處理設備及其基板支撐組件 |
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| SG10201604037TA (en) * | 2011-11-24 | 2016-07-28 | Lam Res Corp | Symmetric rf return path liner |
| US20140053984A1 (en) * | 2012-08-27 | 2014-02-27 | Hyun Ho Doh | Symmetric return liner for modulating azimuthal non-uniformity in a plasma processing system |
| KR20210003959A (ko) * | 2013-03-15 | 2021-01-12 | 어플라이드 머티어리얼스, 인코포레이티드 | 반도체 프로세싱을 위한 챔버 디자인 |
| SG11201508512PA (en) * | 2013-05-23 | 2015-12-30 | Applied Materials Inc | A coated liner assembly for a semiconductor processing chamber |
| JP6307825B2 (ja) * | 2013-09-25 | 2018-04-11 | 日新イオン機器株式会社 | 防着板支持部材、プラズマ源およびイオンビーム照射装置 |
| US11939477B2 (en) | 2014-01-30 | 2024-03-26 | Monolith Materials, Inc. | High temperature heat integration method of making carbon black |
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| US10138378B2 (en) | 2014-01-30 | 2018-11-27 | Monolith Materials, Inc. | Plasma gas throat assembly and method |
| US10370539B2 (en) | 2014-01-30 | 2019-08-06 | Monolith Materials, Inc. | System for high temperature chemical processing |
| KR102497660B1 (ko) | 2014-01-31 | 2023-02-07 | 모놀리스 머티어리얼스 인코포레이티드 | 플라즈마 토치 설계 |
| EP3146368A1 (en) | 2014-05-23 | 2017-03-29 | Corning Incorporated | Low contrast anti-reflection articles with reduced scratch and fingerprint visibility |
| KR102705340B1 (ko) | 2015-02-03 | 2024-09-09 | 모놀리스 머티어리얼스 인코포레이티드 | 카본 블랙 생성 시스템 |
| WO2016126600A1 (en) * | 2015-02-03 | 2016-08-11 | Monolith Materials, Inc. | Regenerative cooling method and apparatus |
| JP1546799S (enExample) * | 2015-06-12 | 2016-03-28 | ||
| CA3032246C (en) | 2015-07-29 | 2023-12-12 | Monolith Materials, Inc. | Dc plasma torch electrical power design method and apparatus |
| EP3347306A4 (en) | 2015-09-09 | 2019-04-17 | Monolith Materials, Inc. | CIRCULAR SINGLE-LAYER GRAPH |
| CA3034212C (en) | 2015-09-14 | 2023-08-01 | Monolith Materials, Inc. | Carbon black from natural gas |
| JP1564934S (enExample) * | 2016-02-26 | 2016-12-05 | ||
| MX2018013162A (es) | 2016-04-29 | 2019-07-04 | Monolith Mat Inc | Adicion de calor secundario para el proceso y aparato de produccion de particulas. |
| ES2983689T3 (es) | 2016-04-29 | 2024-10-24 | Monolith Mat Inc | Método y aparato del aguijón de la antorcha |
| WO2017215806A1 (en) * | 2016-06-15 | 2017-12-21 | Evatec Ag | Vacuum treatment chamber and method of manufacturing a vacuum treated plate-shaped substrate |
| WO2018165483A1 (en) | 2017-03-08 | 2018-09-13 | Monolith Materials, Inc. | Systems and methods of making carbon particles with thermal transfer gas |
| CN115746586A (zh) | 2017-04-20 | 2023-03-07 | 巨石材料公司 | 颗粒系统和方法 |
| USD875054S1 (en) * | 2017-04-28 | 2020-02-11 | Applied Materials, Inc. | Plasma connector liner |
| USD875055S1 (en) * | 2017-04-28 | 2020-02-11 | Applied Materials, Inc. | Plasma connector liner |
| USD875053S1 (en) * | 2017-04-28 | 2020-02-11 | Applied Materials, Inc. | Plasma connector liner |
| CA3074220A1 (en) | 2017-08-28 | 2019-03-07 | Monolith Materials, Inc. | Systems and methods for particle generation |
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| WO2019084200A1 (en) | 2017-10-24 | 2019-05-02 | Monolith Materials, Inc. | PARTICULAR SYSTEMS AND METHODS |
| JP7089987B2 (ja) * | 2018-08-22 | 2022-06-23 | 株式会社日本製鋼所 | 原子層堆積装置 |
| CN208835019U (zh) * | 2018-11-12 | 2019-05-07 | 江苏鲁汶仪器有限公司 | 一种反应腔内衬 |
| CN111312575B (zh) * | 2018-12-12 | 2022-09-16 | 北京北方华创微电子装备有限公司 | 内衬组件及反应腔室 |
| KR102746083B1 (ko) | 2019-06-21 | 2024-12-26 | 삼성전자주식회사 | 플라즈마 처리 장치 및 이를 이용한 반도체 소자 제조 방법 |
| KR102262026B1 (ko) * | 2019-07-18 | 2021-06-07 | 세메스 주식회사 | 기판 처리 장치 |
| JP7699600B2 (ja) * | 2020-02-10 | 2025-06-27 | ラム リサーチ コーポレーション | 傾斜制御のためのエッジプラズマ密度の調整可能性 |
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| US11499223B2 (en) | 2020-12-10 | 2022-11-15 | Applied Materials, Inc. | Continuous liner for use in a processing chamber |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200939378A (en) * | 2007-12-03 | 2009-09-16 | Tokyo Electron Ltd | Processing container an plasma processing device |
| TW200947592A (en) * | 2008-04-07 | 2009-11-16 | Applied Materials Inc | Lower liner with integrated flow equalizer and improved conductance |
| KR20100020126A (ko) * | 2008-08-12 | 2010-02-22 | 주식회사 맥시스 | 라이너 어셈블리 및 이를 구비하는 플라즈마 처리 장치 |
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| CN100573816C (zh) * | 2006-12-06 | 2009-12-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 反应腔室内衬及包含该内衬的反应腔室 |
| CN100587904C (zh) * | 2006-12-11 | 2010-02-03 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 反应腔室内衬及包含该内衬的反应腔室 |
| US8444926B2 (en) * | 2007-01-30 | 2013-05-21 | Applied Materials, Inc. | Processing chamber with heated chamber liner |
| JP4874870B2 (ja) * | 2007-05-29 | 2012-02-15 | 東京エレクトロン株式会社 | 基板処理システム及び基板処理装置 |
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| JP5317509B2 (ja) * | 2008-03-27 | 2013-10-16 | 東京エレクトロン株式会社 | プラズマ処理装置および方法 |
| TW201325326A (zh) * | 2011-10-05 | 2013-06-16 | Applied Materials Inc | 電漿處理設備及其基板支撐組件 |
| US9653267B2 (en) * | 2011-10-06 | 2017-05-16 | Applied Materials, Inc. | Temperature controlled chamber liner |
-
2011
- 2011-06-27 TW TW100122473A patent/TWI502617B/zh not_active IP Right Cessation
- 2011-07-06 JP JP2013520730A patent/JP6025722B2/ja not_active Expired - Fee Related
- 2011-07-06 KR KR1020127027857A patent/KR20130092387A/ko not_active Ceased
- 2011-07-06 CN CN2011800212014A patent/CN102860138A/zh active Pending
- 2011-07-06 WO PCT/US2011/043083 patent/WO2012012200A1/en not_active Ceased
- 2011-07-06 KR KR1020187007230A patent/KR101970615B1/ko not_active Expired - Fee Related
- 2011-07-06 CN CN201810343864.1A patent/CN108538695B/zh not_active Expired - Fee Related
- 2011-07-17 US US13/184,562 patent/US20120018402A1/en not_active Abandoned
-
2015
- 2015-06-12 US US14/738,324 patent/US10242847B2/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200939378A (en) * | 2007-12-03 | 2009-09-16 | Tokyo Electron Ltd | Processing container an plasma processing device |
| TW200947592A (en) * | 2008-04-07 | 2009-11-16 | Applied Materials Inc | Lower liner with integrated flow equalizer and improved conductance |
| KR20100020126A (ko) * | 2008-08-12 | 2010-02-22 | 주식회사 맥시스 | 라이너 어셈블리 및 이를 구비하는 플라즈마 처리 장치 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI762897B (zh) * | 2019-04-05 | 2022-05-01 | 美商應用材料股份有限公司 | 具有可變流量閥的處理系統 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6025722B2 (ja) | 2016-11-16 |
| US10242847B2 (en) | 2019-03-26 |
| TW201205639A (en) | 2012-02-01 |
| KR20180030729A (ko) | 2018-03-23 |
| US20120018402A1 (en) | 2012-01-26 |
| JP2013539159A (ja) | 2013-10-17 |
| KR101970615B1 (ko) | 2019-04-19 |
| US20150279633A1 (en) | 2015-10-01 |
| KR20130092387A (ko) | 2013-08-20 |
| WO2012012200A1 (en) | 2012-01-26 |
| CN108538695A (zh) | 2018-09-14 |
| CN102860138A (zh) | 2013-01-02 |
| CN108538695B (zh) | 2021-01-29 |
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