US20100224128A1 - Semiconductor manufacturing apparatus - Google Patents
Semiconductor manufacturing apparatus Download PDFInfo
- Publication number
- US20100224128A1 US20100224128A1 US12/717,420 US71742010A US2010224128A1 US 20100224128 A1 US20100224128 A1 US 20100224128A1 US 71742010 A US71742010 A US 71742010A US 2010224128 A1 US2010224128 A1 US 2010224128A1
- Authority
- US
- United States
- Prior art keywords
- plasma
- manufacturing apparatus
- semiconductor manufacturing
- density
- boat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 74
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 235000012431 wafers Nutrition 0.000 description 29
- 238000012546 transfer Methods 0.000 description 18
- 230000002093 peripheral effect Effects 0.000 description 12
- 238000013459 approach Methods 0.000 description 10
- 239000007789 gas Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 230000003028 elevating effect Effects 0.000 description 6
- 239000010453 quartz Substances 0.000 description 6
- 238000009616 inductively coupled plasma Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
- H01J37/32761—Continuous moving
- H01J37/32779—Continuous moving of batches of workpieces
Definitions
- the present invention relates to a semiconductor manufacturing apparatus.
- the density of capacity coupled plasma (CCP), about 10 10 cm ⁇ 3 ( ⁇ 10 10 cm 3 ), is lower than the density of inductively coupled plasma (ICP), about 10 12 cm ⁇ 3 ( ⁇ 10 12 cm ⁇ 3 ).
- ICP inductively coupled plasma
- the density uniformity of CCP cannot be adjusted in the vertical direction of a substrate, the flowrate of gas or the process temperature is adjusted for obtaining desired thickness uniformity of a film formed on the substrate. However, this varies the quality of films and becomes one of yield reducing factors.
- a plasma excitation method using CCP is disadvantageous because plasma density is low as compared with those obtained by using other methods and it is difficult to improve the manufacturing yield.
- CCP ions of plasma that have a high temperature and high energy may collide with a quartz wall or a film formed on the quartz wall so that the quartz wall or the film may be damaged by sputtering. If high-frequency power is increased to generate high-density plasma, plasma density (ion density) increases at a region close to a quartz wall of a reaction chamber, and thus the possibility of sputtering of the quartz wall of the reaction chamber increases.
- ICP sources that can produce high-density plasma and have a simple structure are suitable for a vertical semiconductor manufacturing apparatus.
- RF radio frequency
- a plurality of lines of antennas are installed, and the impedance of each bus bar section and the impedance of each power supply line are adjusted so that the same voltage can be applied to the antennas. In this way, uniform high-frequency power is supplied to the antennas to generate ICP.
- An object of the present invention is to provide a semiconductor manufacturing apparatus in which the density of plasma generating in a reaction chamber can be uniformly maintained.
- a semiconductor manufacturing apparatus comprising: a process chamber configured to process a substrate; a plurality of electrodes installed outside the process chamber for generating plasma; and an adjusting unit disposed between the process chamber and the electrodes for adjusting density of plasma generating in the process chamber.
- FIG. 1 is a perspective view illustrating a semiconductor manufacturing apparatus according to an embodiment of the present invention.
- FIG. 2 is a side sectional view illustrating a process furnace of the semiconductor manufacturing apparatus according to an embodiment of the present invention.
- FIG. 3 is a cross sectional view illustrating the process furnace of the semiconductor manufacturing apparatus according to an embodiment of the present invention.
- FIG. 4A and FIG. 4B are views illustrating the peripheral structure of high-frequency antennas of the semiconductor manufacturing apparatus according to an embodiment of the present invention, FIG. 4A being a schematic front view illustrating the high-frequency antennas, FIG. 4B being a side sectional view illustrating the peripheral structure of the high-frequency antennas.
- FIG. 5A and FIG. 5B are views illustrating the peripheral structure of high-frequency antennas of a semiconductor manufacturing apparatus according to another embodiment of the present invention, FIG. 5A being a schematic front view illustrating the high-frequency antennas, FIG. 5B being a side sectional view illustrating the peripheral structure of the high-frequency antennas.
- FIG. 6A and FIG. 6B are views illustrating the peripheral structure of high-frequency antennas of a semiconductor manufacturing apparatus according to another embodiment of the present invention, FIG. 6A being a schematic front view illustrating the high-frequency antennas, FIG. 6B being a side sectional view illustrating the peripheral structure of the high-frequency antennas.
- FIG. 1 is a perspective view illustrating a semiconductor manufacturing apparatus 10 according to an embodiment of the present invention.
- the semiconductor manufacturing apparatus 10 is a batch type vertical semiconductor manufacturing apparatus, and the semiconductor manufacturing apparatus 10 includes a case 12 in which main parts are disposed.
- a cassette stage 16 is installed as a substrate container stage member so that substrate containers such as cassettes 14 can be delivered between the cassette stage 16 and an external carrying device (not shown).
- a cassette elevator 18 is installed as an elevating unit, and a transfer machine 20 is installed on the cassette elevator 18 as a carrying unit.
- a cassette shelf 22 is installed as a cassette placement unit.
- a transfer shelf 24 is installed so that cassettes 14 can be accommodated on the transfer shelf 24 and carried by a wafer transfer machine 44 (described later).
- a standby cassette shelf 26 is installed, and at the upper side of the standby cassette shelf 26 , a cleaning unit 28 is installed to circulate clean air through the inside of the case 12 .
- a process furnace 30 is installed.
- a boat 34 is installed as a substrate holding unit configured to hold substrates such as wafers 32 in a state where the wafers 32 are horizontally oriented and arranged in multiple stages
- a boat elevator 36 is installed as an elevating unit configured to move the boat 34 upward and downward with respect to the process furnace 30 .
- a seal cap 40 is installed as a cover configured to support the boat 34 vertically.
- a transfer elevator 42 is installed as an elevating unit, and at the transfer elevator 42 , the wafer transfer machine 44 is installed as a substrate carrying unit.
- the wafer transfer machine 44 includes an arm (tweezers) 46 capable of picking up, for example, five wafers 32 .
- a furnace port shutter 48 is installed as a shield member for closing the bottom side of the process furnace 30 having an opening/closing mechanism.
- FIG. 2 is a schematic view illustrating the vertical process furnace 30 according to an embodiment of the present invention
- FIG. 3 is a sectional view taken along line A-A of FIG. 2
- the process furnace 30 includes a process tube 50 , which is made of a highly heat resistant material such as quartz glass and has a cylindrical shape of which one end is opened and the other end is closed, and the process tube 50 is vertically disposed and fixedly supported so that the centerline of the process tube 50 can be vertical.
- a process chamber 52 is formed to accommodate the boat 34 holding a plurality of wafers 32
- the opened bottom side of the process tube 50 forms a furnace port 54 through which the boat 34 is loaded and unloaded.
- the inner diameter of the process tube 50 is set greater than the largest outer diameter of wafers 32 to be processed.
- a heater 56 is installed to surround the process tube 50 and be coaxial with the process tube 50 so as to heat the entire region of the process chamber 52 uniformly, and the heater 56 is vertically fixed.
- a manifold 58 is installed to make contact with the process tube 50 , and the manifold 58 is made of a metal and has a cylindrical shape of which both ends extends outward as flanges.
- the manifold 58 is detachably attached to the process tube 50 for maintenance or cleaning works of the process tube 50 .
- An end of an exhaust pipe 60 is connected to a part of the sidewall of the manifold 58 , and the other end of the exhaust pipe 60 is connected to an exhaust device (not shown), so that the process chamber 52 can be exhausted.
- the seal cap 40 is brought into contact with the bottom side of the manifold 58 in a vertical direction from the lower side of the manifold 58 with a seal ring 62 being disposed therebetween, so as to close the opened bottom side of the manifold 58 .
- the seal cap 40 is disk-shaped and has approximately the same outer diameter as the outer diameter of the manifold 58 , and the seal cap 40 is configured to be vertically moved by the boat elevator 36 (refer to FIG. 1 ).
- a rotation shaft 64 is inserted through the center of the seal cap 40 and is configured to be vertically moved together with the seal cap 40 and be rotated by a rotary driving device (not shown). On the top end of the rotation shaft 64 , the boat 34 is vertically based and supported.
- the boat 34 includes a pair of plates 66 and 68 at upper and lower sides, and holding members 70 (for example, three holding members 70 ) vertically installed between the plates 66 and 68 .
- holding members 70 for example, three holding members 70
- a plurality of holding grooves 72 are arranged at regular intervals in the longitudinal direction of the holding member 70 in a manner such that the holding grooves 72 of the holding members 70 face each other.
- the wafers 32 can be held by the boat 34 in a state where the wafers 32 are horizontally oriented and vertically arranged with the centers of the wafers 32 being aligned with each other.
- an insulating cap part 74 is formed, and the bottom surface of the insulating cap part 74 is supported on the rotation shaft 64 .
- a gutter-shaped barrier wall 78 is disposed to form a plasma chamber 76 , and a plurality of injection holes 80 are arranged to face the wafers 32 .
- a gas supply pipe 82 is installed at a lateral lower side of the process tube 50 to supply gas to the plasma chamber 76 .
- high-frequency antennas 84 are vertically installed in two stages as plasma generating electrodes.
- a high-frequency circuit matching unit 86 is installed so that the high-frequency antennas 84 can be individually matched.
- Plasma can be generated by applying high-frequency power to the high-frequency antennas 84 from high-frequency power sources 88 , respectively.
- high-frequency antennas 84 are installed in two stages; however, the present invention is not limited thereto.
- a plurality of high-frequency antennas can be vertically installed in multiple stages for precisely controlling generation of plasma and the vertical density uniformity of the plasma.
- a shield 90 is installed at the outer side of the process tube 50 between the high-frequency antennas 84 and the plasma chamber 76 .
- the inner wall of the process tube 50 is negatively charged due to electrons accelerated by the high voltage, and ions are attracted to a static electric field formed by the negatively charged inner wall of the process tube 50 , which causes atoms are sputtered from the inner wall of the process tube 50 . Due to the sputtering of the inner wall of the process tube 50 , impurities such as oxygen can be generated.
- the shield 90 is installed to block an electric field so that plasma cannot be affected by electric fields of the high-frequency antennas 84 .
- FIG. 4A and FIG. 4B illustrate the peripheral structures of the high-frequency antennas 84 and the shield 90 .
- FIG. 4A is a schematic front view illustrating the high-frequency antennas 84
- FIG. 4B is a side view illustrating the peripheral structure of the high-frequency antennas 84 .
- the shield 90 has a comb shape, and the teeth of the shield 90 are more densely arranged at an approach region (position P) between the two high-frequency antennas 84 as compared with the other part of the shield 90 .
- a cassette 14 in which wafers 32 are charged is carried from the external carrying device (not shown) in a state where the wafers 32 charged in the cassette 14 face upward, and then the cassette 14 is placed on the cassette stage 16 in a manner such that the wafers 32 are horizontally oriented.
- the cassette 14 is carried from the cassette stage 16 to the cassette shelf 22 or the standby cassette shelf 26 by combination of elevating and transversely moving operations of the cassette elevator 18 and reciprocating and rotating operations of the transfer machine 20 .
- the cassette 14 in which the wafers 32 to be transferred to the process furnace 30 is accommodated, is carried to and accommodated on the transfer shelf 24 by the cassette elevator 18 and the transfer machine 20 . After the cassette 14 is carried to the transfer shelf 24 , wafers 32 are charged from the transfer shelf 24 to the boat 34 which is in a down position by combination of reciprocating and rotating operations of the wafer transfer machine 44 and elevating operations of the transfer elevator 42 .
- the boat 34 After a predetermined number of wafers 32 are charged into the boat 34 , the boat 34 is inserted into the process furnace 30 by the boat elevator 36 , and the seal cap 40 is closed so that the process furnace 30 can be hermetically closed.
- the process chamber 52 is exhausted to a pressure equal to or lower than a predetermined value by the exhaust device connected to the exhaust pipe 60 , and more power is supplied to the heater 56 to heat the process chamber 52 to a predetermined temperature. Since the heater 56 is hot-wall type, the inside temperature of the process chamber 52 can be uniformly maintained. Therefore, the temperature of the wafers 32 held in the boat 34 can be uniform along the entire length of the boat 34 , and the in-surface temperature distribution of each of the wafers 32 can also be uniform.
- a process gas is supplied through the gas supply pipe 82 .
- the boat 34 is rotated by the rotation shaft 64 , and high-frequency power is applied to the high-frequency antennas 84 from the high-frequency power sources 88 through the high-frequency circuit matching units 86 .
- plasma is generated in the plasma chamber 76 , and the process gas is activated into a reactive state.
- the teeth of the shield 90 are densely arranged at the position P so as to adjust plasma power. Owing to this structure, the density of plasma is not locally increased at the approach region (position P) but can be uniform throughout the inside of the plasma chamber 76 .
- An activated species of the activated process gas is blown into the process chamber 52 through the injection holes 80 of the barrier wall 78 .
- the activated species can be blown to the wafers 32 corresponding to the injection holes 80 for bringing the activated species into contact with the wafers 32 , so that the wafers 32 held at the boat 34 can make contact with the activated species uniformly along the entire length of the boat 34 .
- the boat 34 is rotated by the rotation shaft 64 , the in-surface contact distribution of the activated species can uniform for each wafer 32 .
- the wafers 32 can be uniformly processed.
- the wafers 32 are completely processed after a preset time, supply of the process gas, rotation of the rotation shaft 64 , power supply from the high-frequency power sources 88 , heating by the heater 56 , and exhausting by the exhaust device are stopped. Thereafter, the wafers 32 are carried from the boat 34 to the cassette 14 placed on the transfer shelf 24 in the reverse order.
- the cassette 14 is carried from the transfer shelf 24 to the cassette stage 16 by the transfer machine 20 , and then the cassette 14 is carried to the outside of the case 12 by the external carrying device (not shown).
- the bottom side of the process furnace 30 is closed by the furnace port shutter 48 so as to permeation of external air into the process furnace 30 .
- FIG. 5A and FIG. 5B are views illustrating the peripheral structure of high-frequency antennas 84 according to another embodiment of the present invention.
- FIG. 5A is a schematic front view illustrating the high-frequency antennas 84
- FIG. 5B is a side view illustrating the peripheral structure of the high-frequency antennas 84 .
- a shield 90 is not illustrated.
- the high-frequency antennas 84 are bent away from a plasma chamber 76 into an arc-shape.
- the high-frequency antennas 84 can be spaced away from the plasma chamber 76 at the approach region (position P) so as to adjust plasma power. Therefore, the density of plasma is not locally increased at the approach region (position P) but can be uniform throughout the inside of the plasma chamber 76 .
- FIG. 6A and FIG. 6B are views illustrating the peripheral structure of high-frequency antennas according to another embodiment of the present invention.
- FIG. 6A is a schematic front view illustrating the high-frequency antennas 84
- FIG. 6B is a side view illustrating the peripheral structure of the high-frequency antennas 84 .
- a shield 90 is not illustrated.
- antenna shields 92 are installed on the high-frequency antennas 84 at an approach region (position P) of the two high-frequency antennas 84 .
- antenna shields 92 are installed on the high-frequency antennas 84 .
- the antenna shields 92 may be cylindrical or spiral conductors which are independently earthed and provided on the high-frequency antennas 84 with insulators being disposed therebetween.
- the antenna shields 92 may be earthed to the shield 90 .
- shielding ability can be increased at the approach region (position P), so that plasma power can be adjusted. Therefore, the density of plasma is not locally increased at the approach region (position P) but can be uniform throughout the inside of the plasma chamber 76 .
- high-density ICP can be generated uniformly in a vertical direction, and since plasma is generated using low-voltage antennas and a shield is used for voltage cutting, sputtering of parts such as a part made of quartz can be prevented.
- the present invention can be used alone as a high-density, sputterless plasma source, and moreover, the present invention can be applied to high-density electron sources of electron beam excited plasma (EBEP) type.
- EBEP electron beam excited plasma
- the present invention provides a semiconductor manufacturing apparatus in which the density of plasma can be uniformly kept in a reaction chamber.
- the present invention also includes the following embodiments.
- a semiconductor manufacturing apparatus comprising: a process chamber configured to process a substrate; a plurality of electrodes installed outside the process chamber for generating plasma; and an adjusting unit disposed between the process chamber and the electrodes for adjusting density of plasma generating in the process chamber.
- the adjusting unit may comprise a shield, and the density of the plasma may be adjusted according to disposition or shape of the shield.
- the density of the plasma may be adjusted according to shapes of the electrodes.
Abstract
Provided is a semiconductor manufacturing apparatus in which the density of plasma generating in a reaction chamber can be uniformly maintained. The semiconductor manufacturing apparatus comprises a process chamber configured to process a substrate, a plurality of electrodes installed outside the process chamber for generating plasma, and an adjusting unit disposed between the process chamber and the electrodes for adjusting density of plasma generating in the process chamber.
Description
- This U.S. non-provisional patent application claims priority under 35 U.S.C. §119 of Japanese Patent Application No. 2009-054384, filed on Mar. 9, 2009, in the Japanese Patent Office, the entire contents of which are hereby incorporated by reference.
- 1. Field of the Invention
- The present invention relates to a semiconductor manufacturing apparatus.
- 2. Description of the Prior Art
- Generally, the density of capacity coupled plasma (CCP), about 1010 cm−3 (˜10 10 cm3), is lower than the density of inductively coupled plasma (ICP), about 1012 cm−3 (˜1012 cm−3). In addition, since the density uniformity of CCP cannot be adjusted in the vertical direction of a substrate, the flowrate of gas or the process temperature is adjusted for obtaining desired thickness uniformity of a film formed on the substrate. However, this varies the quality of films and becomes one of yield reducing factors.
- In a vertical semiconductor manufacturing apparatus, a plasma excitation method using CCP is disadvantageous because plasma density is low as compared with those obtained by using other methods and it is difficult to improve the manufacturing yield. In the case of CCP, ions of plasma that have a high temperature and high energy may collide with a quartz wall or a film formed on the quartz wall so that the quartz wall or the film may be damaged by sputtering. If high-frequency power is increased to generate high-density plasma, plasma density (ion density) increases at a region close to a quartz wall of a reaction chamber, and thus the possibility of sputtering of the quartz wall of the reaction chamber increases.
- Moreover, there is no permanent magnet that can resist temperature conditions of a film forming process, and magnets cannot be installed in a vertical type heater. Therefore, a device such as an electron cyclotron resonance (ECR) plasma source that uses magnets cannot be used in a vertical semiconductor manufacturing apparatus.
- Due to above-mentioned reasons, ICP sources that can produce high-density plasma and have a simple structure are suitable for a vertical semiconductor manufacturing apparatus. However, in the case of an ICP source, as the length of a radio frequency (RF) antenna increases, the voltage difference between both ends of the RF antenna increases. If a high voltage is applied to an RF antenna, CCP is generated between parts of the RF antenna or between the RF antenna and an earthed part (a lower metal part of a vertical apparatus). Such CCP incurs an RF power loss.
- To deal with this problem, a plurality of RF antennas are installed.
- In a plasma processing apparatus disclosed in
Patent Document 1 below, a plurality of lines of antennas are installed, and the impedance of each bus bar section and the impedance of each power supply line are adjusted so that the same voltage can be applied to the antennas. In this way, uniform high-frequency power is supplied to the antennas to generate ICP. - [Patent Document 1]
- Japanese Unexamined Patent Application Publication No. 2007-220594
- However, in the conventional art, the density of plasma generated in a reaction chamber cannot be made uniform.
- An object of the present invention is to provide a semiconductor manufacturing apparatus in which the density of plasma generating in a reaction chamber can be uniformly maintained.
- According to an aspect of the present invention, there is provided a semiconductor manufacturing apparatus comprising: a process chamber configured to process a substrate; a plurality of electrodes installed outside the process chamber for generating plasma; and an adjusting unit disposed between the process chamber and the electrodes for adjusting density of plasma generating in the process chamber.
-
FIG. 1 is a perspective view illustrating a semiconductor manufacturing apparatus according to an embodiment of the present invention. -
FIG. 2 is a side sectional view illustrating a process furnace of the semiconductor manufacturing apparatus according to an embodiment of the present invention. -
FIG. 3 is a cross sectional view illustrating the process furnace of the semiconductor manufacturing apparatus according to an embodiment of the present invention. -
FIG. 4A andFIG. 4B are views illustrating the peripheral structure of high-frequency antennas of the semiconductor manufacturing apparatus according to an embodiment of the present invention,FIG. 4A being a schematic front view illustrating the high-frequency antennas,FIG. 4B being a side sectional view illustrating the peripheral structure of the high-frequency antennas. -
FIG. 5A andFIG. 5B are views illustrating the peripheral structure of high-frequency antennas of a semiconductor manufacturing apparatus according to another embodiment of the present invention,FIG. 5A being a schematic front view illustrating the high-frequency antennas,FIG. 5B being a side sectional view illustrating the peripheral structure of the high-frequency antennas. -
FIG. 6A andFIG. 6B are views illustrating the peripheral structure of high-frequency antennas of a semiconductor manufacturing apparatus according to another embodiment of the present invention,FIG. 6A being a schematic front view illustrating the high-frequency antennas,FIG. 6B being a side sectional view illustrating the peripheral structure of the high-frequency antennas. - Embodiments of the present invention will be described hereinafter with reference to the attached drawings.
-
FIG. 1 is a perspective view illustrating asemiconductor manufacturing apparatus 10 according to an embodiment of the present invention. Thesemiconductor manufacturing apparatus 10 is a batch type vertical semiconductor manufacturing apparatus, and thesemiconductor manufacturing apparatus 10 includes acase 12 in which main parts are disposed. At the front side of thecase 12, acassette stage 16 is installed as a substrate container stage member so that substrate containers such ascassettes 14 can be delivered between thecassette stage 16 and an external carrying device (not shown). At the rear side of thecassette stage 16, acassette elevator 18 is installed as an elevating unit, and atransfer machine 20 is installed on thecassette elevator 18 as a carrying unit. In addition, at the rear side of thecassette elevator 18, acassette shelf 22 is installed as a cassette placement unit. At thecassette shelf 22, atransfer shelf 24 is installed so thatcassettes 14 can be accommodated on thetransfer shelf 24 and carried by a wafer transfer machine 44 (described later). At the upper side of thecassette stage 16, astandby cassette shelf 26 is installed, and at the upper side of thestandby cassette shelf 26, acleaning unit 28 is installed to circulate clean air through the inside of thecase 12. - At the rear upper part of the
case 12, aprocess furnace 30 is installed. Under theprocess furnace 30, aboat 34 is installed as a substrate holding unit configured to hold substrates such aswafers 32 in a state where thewafers 32 are horizontally oriented and arranged in multiple stages, and aboat elevator 36 is installed as an elevating unit configured to move theboat 34 upward and downward with respect to theprocess furnace 30. At the leading end of anelevating member 38 installed on theboat elevator 36, aseal cap 40 is installed as a cover configured to support theboat 34 vertically. Between theboat elevator 36 and thecassette shelf 22, atransfer elevator 42 is installed as an elevating unit, and at thetransfer elevator 42, thewafer transfer machine 44 is installed as a substrate carrying unit. Thewafer transfer machine 44 includes an arm (tweezers) 46 capable of picking up, for example, fivewafers 32. Near theboat elevator 36, afurnace port shutter 48 is installed as a shield member for closing the bottom side of theprocess furnace 30 having an opening/closing mechanism. - Next, the
process furnace 30 will be described in detail with reference toFIG. 2 andFIG. 3 . -
FIG. 2 is a schematic view illustrating thevertical process furnace 30 according to an embodiment of the present invention, andFIG. 3 is a sectional view taken along line A-A ofFIG. 2 . Theprocess furnace 30 includes aprocess tube 50, which is made of a highly heat resistant material such as quartz glass and has a cylindrical shape of which one end is opened and the other end is closed, and theprocess tube 50 is vertically disposed and fixedly supported so that the centerline of theprocess tube 50 can be vertical. At the hollow part of theprocess tube 50, aprocess chamber 52 is formed to accommodate theboat 34 holding a plurality ofwafers 32, and the opened bottom side of theprocess tube 50 forms a furnace port 54 through which theboat 34 is loaded and unloaded. The inner diameter of theprocess tube 50 is set greater than the largest outer diameter ofwafers 32 to be processed. - At the outside of the
process tube 50, aheater 56 is installed to surround theprocess tube 50 and be coaxial with theprocess tube 50 so as to heat the entire region of theprocess chamber 52 uniformly, and theheater 56 is vertically fixed. - At the bottom side of the
process tube 50, a manifold 58 is installed to make contact with theprocess tube 50, and the manifold 58 is made of a metal and has a cylindrical shape of which both ends extends outward as flanges. The manifold 58 is detachably attached to theprocess tube 50 for maintenance or cleaning works of theprocess tube 50. - An end of an
exhaust pipe 60 is connected to a part of the sidewall of the manifold 58, and the other end of theexhaust pipe 60 is connected to an exhaust device (not shown), so that theprocess chamber 52 can be exhausted. Theseal cap 40 is brought into contact with the bottom side of the manifold 58 in a vertical direction from the lower side of the manifold 58 with aseal ring 62 being disposed therebetween, so as to close the opened bottom side of the manifold 58. Theseal cap 40 is disk-shaped and has approximately the same outer diameter as the outer diameter of the manifold 58, and theseal cap 40 is configured to be vertically moved by the boat elevator 36 (refer toFIG. 1 ). Arotation shaft 64 is inserted through the center of theseal cap 40 and is configured to be vertically moved together with theseal cap 40 and be rotated by a rotary driving device (not shown). On the top end of therotation shaft 64, theboat 34 is vertically based and supported. - The
boat 34 includes a pair ofplates plates members 70, a plurality of holdinggrooves 72 are arranged at regular intervals in the longitudinal direction of the holdingmember 70 in a manner such that the holdinggrooves 72 of the holdingmembers 70 face each other. In a way of inserting the edge parts ofwafers 32 in the holdinggrooves 72 of the holdingmembers 70, thewafers 32 can be held by theboat 34 in a state where thewafers 32 are horizontally oriented and vertically arranged with the centers of thewafers 32 being aligned with each other. At the bottom surface of thelower plate 66 of theboat 34, an insulatingcap part 74 is formed, and the bottom surface of the insulatingcap part 74 is supported on therotation shaft 64. - At the inner surface of the
process tube 50, a gutter-shapedbarrier wall 78 is disposed to form aplasma chamber 76, and a plurality of injection holes 80 are arranged to face thewafers 32. Agas supply pipe 82 is installed at a lateral lower side of theprocess tube 50 to supply gas to theplasma chamber 76. - At a side opposite to the
plasma chamber 76 located between theprocess tube 50 and theheater 56, high-frequency antennas 84 are vertically installed in two stages as plasma generating electrodes. At each of the high-frequency antennas 84, a high-frequencycircuit matching unit 86 is installed so that the high-frequency antennas 84 can be individually matched. Plasma can be generated by applying high-frequency power to the high-frequency antennas 84 from high-frequency power sources 88, respectively. - In the current embodiment, high-
frequency antennas 84 are installed in two stages; however, the present invention is not limited thereto. For example, a plurality of high-frequency antennas can be vertically installed in multiple stages for precisely controlling generation of plasma and the vertical density uniformity of the plasma. - A
shield 90 is installed at the outer side of theprocess tube 50 between the high-frequency antennas 84 and theplasma chamber 76. When a high voltage is applied to the high-frequency antennas 84, the inner wall of theprocess tube 50 is negatively charged due to electrons accelerated by the high voltage, and ions are attracted to a static electric field formed by the negatively charged inner wall of theprocess tube 50, which causes atoms are sputtered from the inner wall of theprocess tube 50. Due to the sputtering of the inner wall of theprocess tube 50, impurities such as oxygen can be generated. To prevent this, theshield 90 is installed to block an electric field so that plasma cannot be affected by electric fields of the high-frequency antennas 84. - In this way, sputtering of the inner wall of the
process tube 50 can be prevented. -
FIG. 4A andFIG. 4B illustrate the peripheral structures of the high-frequency antennas 84 and theshield 90.FIG. 4A is a schematic front view illustrating the high-frequency antennas 84, andFIG. 4B is a side view illustrating the peripheral structure of the high-frequency antennas 84. In the current embodiment, theshield 90 has a comb shape, and the teeth of theshield 90 are more densely arranged at an approach region (position P) between the two high-frequency antennas 84 as compared with the other part of theshield 90. - Next, an operation of the
semiconductor manufacturing apparatus 10 will be explained. - A
cassette 14 in whichwafers 32 are charged is carried from the external carrying device (not shown) in a state where thewafers 32 charged in thecassette 14 face upward, and then thecassette 14 is placed on thecassette stage 16 in a manner such that thewafers 32 are horizontally oriented. Thecassette 14 is carried from thecassette stage 16 to thecassette shelf 22 or thestandby cassette shelf 26 by combination of elevating and transversely moving operations of thecassette elevator 18 and reciprocating and rotating operations of thetransfer machine 20. - The
cassette 14, in which thewafers 32 to be transferred to theprocess furnace 30 is accommodated, is carried to and accommodated on thetransfer shelf 24 by thecassette elevator 18 and thetransfer machine 20. After thecassette 14 is carried to thetransfer shelf 24,wafers 32 are charged from thetransfer shelf 24 to theboat 34 which is in a down position by combination of reciprocating and rotating operations of thewafer transfer machine 44 and elevating operations of thetransfer elevator 42. - After a predetermined number of
wafers 32 are charged into theboat 34, theboat 34 is inserted into theprocess furnace 30 by theboat elevator 36, and theseal cap 40 is closed so that theprocess furnace 30 can be hermetically closed. - After the
boat 34 is loaded in theprocess chamber 52, theprocess chamber 52 is exhausted to a pressure equal to or lower than a predetermined value by the exhaust device connected to theexhaust pipe 60, and more power is supplied to theheater 56 to heat theprocess chamber 52 to a predetermined temperature. Since theheater 56 is hot-wall type, the inside temperature of theprocess chamber 52 can be uniformly maintained. Therefore, the temperature of thewafers 32 held in theboat 34 can be uniform along the entire length of theboat 34, and the in-surface temperature distribution of each of thewafers 32 can also be uniform. - After the
process chamber 52 is heated to a predetermined temperature and stably kept at the predetermined temperature, a process gas is supplied through thegas supply pipe 82. When the pressure of theprocess chamber 52 reaches a preset pressure level, theboat 34 is rotated by therotation shaft 64, and high-frequency power is applied to the high-frequency antennas 84 from the high-frequency power sources 88 through the high-frequencycircuit matching units 86. Then, plasma is generated in theplasma chamber 76, and the process gas is activated into a reactive state. - Since an electric field is stronger at the approach region (position P) where the high-
frequency antennas 84 approach each other, the teeth of theshield 90 are densely arranged at the position P so as to adjust plasma power. Owing to this structure, the density of plasma is not locally increased at the approach region (position P) but can be uniform throughout the inside of theplasma chamber 76. - An activated species of the activated process gas is blown into the
process chamber 52 through the injection holes 80 of thebarrier wall 78. In this way, the activated species can be blown to thewafers 32 corresponding to the injection holes 80 for bringing the activated species into contact with thewafers 32, so that thewafers 32 held at theboat 34 can make contact with the activated species uniformly along the entire length of theboat 34. In addition, since theboat 34 is rotated by therotation shaft 64, the in-surface contact distribution of the activated species can uniform for eachwafer 32. - In this way, the
wafers 32 can be uniformly processed. - If the
wafers 32 are completely processed after a preset time, supply of the process gas, rotation of therotation shaft 64, power supply from the high-frequency power sources 88, heating by theheater 56, and exhausting by the exhaust device are stopped. Thereafter, thewafers 32 are carried from theboat 34 to thecassette 14 placed on thetransfer shelf 24 in the reverse order. Thecassette 14 is carried from thetransfer shelf 24 to thecassette stage 16 by thetransfer machine 20, and then thecassette 14 is carried to the outside of thecase 12 by the external carrying device (not shown). - In addition, when the
boat 34 is in a down position, the bottom side of theprocess furnace 30 is closed by thefurnace port shutter 48 so as to permeation of external air into theprocess furnace 30. -
FIG. 5A andFIG. 5B are views illustrating the peripheral structure of high-frequency antennas 84 according to another embodiment of the present invention.FIG. 5A is a schematic front view illustrating the high-frequency antennas 84, andFIG. 5B is a side view illustrating the peripheral structure of the high-frequency antennas 84. InFIG. 5A andFIG. 5B , ashield 90 is not illustrated. In the current embodiment, at an approach region (position P) of the two high-frequency antennas 84, the high-frequency antennas 84 are bent away from aplasma chamber 76 into an arc-shape. - Owing to this structure, the high-
frequency antennas 84 can be spaced away from theplasma chamber 76 at the approach region (position P) so as to adjust plasma power. Therefore, the density of plasma is not locally increased at the approach region (position P) but can be uniform throughout the inside of theplasma chamber 76. -
FIG. 6A andFIG. 6B are views illustrating the peripheral structure of high-frequency antennas according to another embodiment of the present invention.FIG. 6A is a schematic front view illustrating the high-frequency antennas 84, andFIG. 6B is a side view illustrating the peripheral structure of the high-frequency antennas 84. InFIG. 6A andFIG. 6B , ashield 90 is not illustrated. According to the current embodiment, at an approach region (position P) of the two high-frequency antennas 84, antenna shields 92 are installed on the high-frequency antennas 84. For example, the antenna shields 92 may be cylindrical or spiral conductors which are independently earthed and provided on the high-frequency antennas 84 with insulators being disposed therebetween. Alternatively, the antenna shields 92 may be earthed to theshield 90. - Owing to this structure, shielding ability can be increased at the approach region (position P), so that plasma power can be adjusted. Therefore, the density of plasma is not locally increased at the approach region (position P) but can be uniform throughout the inside of the
plasma chamber 76. - According to the present invention, high-density ICP can be generated uniformly in a vertical direction, and since plasma is generated using low-voltage antennas and a shield is used for voltage cutting, sputtering of parts such as a part made of quartz can be prevented.
- The present invention can be used alone as a high-density, sputterless plasma source, and moreover, the present invention can be applied to high-density electron sources of electron beam excited plasma (EBEP) type.
- As described above, the present invention provides a semiconductor manufacturing apparatus in which the density of plasma can be uniformly kept in a reaction chamber.
- (Supplementary Note)
- The present invention also includes the following embodiments.
- (Supplementary Note 1)
- According to an embodiment of the present invention, there is provided a semiconductor manufacturing apparatus comprising: a process chamber configured to process a substrate; a plurality of electrodes installed outside the process chamber for generating plasma; and an adjusting unit disposed between the process chamber and the electrodes for adjusting density of plasma generating in the process chamber.
- (Supplementary Note 2)
- In the semiconductor manufacturing apparatus of
Supplementary Note 1, the adjusting unit may comprise a shield, and the density of the plasma may be adjusted according to disposition or shape of the shield. - (Supplementary Note 3)
- In the semiconductor manufacturing apparatus of
Supplementary Note 1, the density of the plasma may be adjusted according to shapes of the electrodes.
Claims (3)
1. A semiconductor manufacturing apparatus comprising:
a process chamber configured to process a substrate;
a plurality of electrodes installed outside the process chamber for generating plasma; and
an adjusting unit disposed between the process chamber and the electrodes for adjusting density of plasma generating in the process chamber.
2. The semiconductor manufacturing apparatus of claim 1 , wherein the adjusting unit comprises a shield, and the density of the plasma is adjusted according to disposition or shape of the shield.
3. The semiconductor manufacturing apparatus of claim 1 , wherein the density of the plasma is adjusted according to shapes of the electrodes.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009-054384 | 2009-03-09 | ||
JP2009054384A JP2010212321A (en) | 2009-03-09 | 2009-03-09 | Semiconductor manufacturing apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
US20100224128A1 true US20100224128A1 (en) | 2010-09-09 |
Family
ID=42677113
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/717,420 Abandoned US20100224128A1 (en) | 2009-03-09 | 2010-03-04 | Semiconductor manufacturing apparatus |
Country Status (5)
Country | Link |
---|---|
US (1) | US20100224128A1 (en) |
JP (1) | JP2010212321A (en) |
KR (1) | KR20100101544A (en) |
CN (1) | CN101834109A (en) |
TW (1) | TW201104744A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10961626B2 (en) * | 2017-09-20 | 2021-03-30 | Eugene Technology Co., Ltd. | Plasma processing apparatus having injection ports at both sides of the ground electrode for batch processing of substrates |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6126475B2 (en) * | 2013-07-02 | 2017-05-10 | 東京エレクトロン株式会社 | Substrate processing equipment |
JP6515665B2 (en) * | 2015-05-07 | 2019-05-22 | 東京エレクトロン株式会社 | Substrate processing equipment |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6237526B1 (en) * | 1999-03-26 | 2001-05-29 | Tokyo Electron Limited | Process apparatus and method for improving plasma distribution and performance in an inductively coupled plasma |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5449433A (en) * | 1994-02-14 | 1995-09-12 | Micron Semiconductor, Inc. | Use of a high density plasma source having an electrostatic shield for anisotropic polysilicon etching over topography |
JPH07245195A (en) * | 1994-03-07 | 1995-09-19 | Matsushita Electric Ind Co Ltd | Method and device for plasma processing |
US5650032A (en) * | 1995-06-06 | 1997-07-22 | International Business Machines Corporation | Apparatus for producing an inductive plasma for plasma processes |
JP2000345351A (en) * | 1999-05-31 | 2000-12-12 | Anelva Corp | Plasma cvd device |
US20030164143A1 (en) * | 2002-01-10 | 2003-09-04 | Hitachi Kokusai Electric Inc. | Batch-type remote plasma processing apparatus |
KR100829327B1 (en) * | 2002-04-05 | 2008-05-13 | 가부시키가이샤 히다치 고쿠사이 덴키 | Substrate processing apparatus and reaction tube |
JP3618333B2 (en) * | 2002-12-16 | 2005-02-09 | 独立行政法人科学技術振興機構 | Plasma generator |
JP5098882B2 (en) * | 2007-08-31 | 2012-12-12 | 東京エレクトロン株式会社 | Plasma processing equipment |
-
2009
- 2009-03-09 JP JP2009054384A patent/JP2010212321A/en active Pending
-
2010
- 2010-03-04 US US12/717,420 patent/US20100224128A1/en not_active Abandoned
- 2010-03-08 CN CN201010128802A patent/CN101834109A/en active Pending
- 2010-03-09 KR KR1020100020930A patent/KR20100101544A/en not_active IP Right Cessation
- 2010-03-09 TW TW099106693A patent/TW201104744A/en unknown
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6237526B1 (en) * | 1999-03-26 | 2001-05-29 | Tokyo Electron Limited | Process apparatus and method for improving plasma distribution and performance in an inductively coupled plasma |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10961626B2 (en) * | 2017-09-20 | 2021-03-30 | Eugene Technology Co., Ltd. | Plasma processing apparatus having injection ports at both sides of the ground electrode for batch processing of substrates |
Also Published As
Publication number | Publication date |
---|---|
JP2010212321A (en) | 2010-09-24 |
CN101834109A (en) | 2010-09-15 |
KR20100101544A (en) | 2010-09-17 |
TW201104744A (en) | 2011-02-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6300227B1 (en) | Enhanced plasma mode and system for plasma immersion ion implantation | |
US6213050B1 (en) | Enhanced plasma mode and computer system for plasma immersion ion implantation | |
JP5698652B2 (en) | Coaxial microwave assisted deposition and etching system | |
US7880392B2 (en) | Plasma producing method and apparatus as well as plasma processing apparatus | |
EP0653775B1 (en) | Microwave plasma processing apparatus and method | |
US20060042755A1 (en) | Large surface area dry etcher | |
US9028191B2 (en) | Substrate processing apparatus and method of manufacturing semiconductor device | |
US8911602B2 (en) | Dual hexagonal shaped plasma source | |
KR20110010780A (en) | Microwave-assisted rotatable pvd | |
JP2009515292A (en) | Low voltage inductively coupled plasma generator for plasma processing | |
US20010002584A1 (en) | Enhanced plasma mode and system for plasma immersion ion implantation | |
KR101542270B1 (en) | Plasma treatment device | |
JP5969856B2 (en) | Sputtering equipment | |
US20100224128A1 (en) | Semiconductor manufacturing apparatus | |
JP4948088B2 (en) | Semiconductor manufacturing equipment | |
WO2000032839A1 (en) | Enhanced plasma mode, method, and system for plasma immersion ion implantation | |
JP2006278652A (en) | Board processor | |
JPH07273092A (en) | Plasma treatment apparatus and its cleaning method | |
US20090137128A1 (en) | Substrate Processing Apparatus and Semiconductor Device Producing Method | |
KR20110035146A (en) | High-speed consecutive substrate processing system | |
JP2006049367A (en) | Plasma processing apparatus | |
KR100921635B1 (en) | Appartus of plasma processing for substrate | |
JP2007059527A (en) | Substrate treatment device | |
WO2020239193A1 (en) | Apparatus for heat treatment, substrate processing system and method for processing a substrate | |
JP2010132955A (en) | Substrate treatment apparatus |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: HITACHI KOKUSAI ELECTRIC, INC., JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:YAMAGUCHI, TAKATOMO;SHIRAKO, KENJI;HIRAMATSU, HIROAKI;REEL/FRAME:024436/0412 Effective date: 20100210 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |