JP6000390B2 - 発光モジュール、発光モジュールの製造方法、および灯具ユニット - Google Patents
発光モジュール、発光モジュールの製造方法、および灯具ユニット Download PDFInfo
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- JP6000390B2 JP6000390B2 JP2015046315A JP2015046315A JP6000390B2 JP 6000390 B2 JP6000390 B2 JP 6000390B2 JP 2015046315 A JP2015046315 A JP 2015046315A JP 2015046315 A JP2015046315 A JP 2015046315A JP 6000390 B2 JP6000390 B2 JP 6000390B2
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- light
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- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 2
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910007948 ZrB2 Inorganic materials 0.000 description 1
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- VWZIXVXBCBBRGP-UHFFFAOYSA-N boron;zirconium Chemical compound B#[Zr]#B VWZIXVXBCBBRGP-UHFFFAOYSA-N 0.000 description 1
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
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- 229910001887 tin oxide Inorganic materials 0.000 description 1
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- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- F21S41/00—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps
- F21S41/10—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source
- F21S41/14—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source characterised by the type of light source
- F21S41/141—Light emitting diodes [LED]
- F21S41/147—Light emitting diodes [LED] the main emission direction of the LED being angled to the optical axis of the illuminating device
- F21S41/148—Light emitting diodes [LED] the main emission direction of the LED being angled to the optical axis of the illuminating device the main emission direction of the LED being perpendicular to the optical axis
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
- F21S41/00—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps
- F21S41/20—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by refractors, transparent cover plates, light guides or filters
- F21S41/29—Attachment thereof
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
- F21S41/00—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps
- F21S41/40—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by screens, non-reflecting members, light-shielding members or fixed shades
- F21S41/43—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by screens, non-reflecting members, light-shielding members or fixed shades characterised by the shape thereof
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
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- F21S41/00—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps
- F21S41/40—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by screens, non-reflecting members, light-shielding members or fixed shades
- F21S41/47—Attachment thereof
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Led Device Packages (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Description
図1は、第1の実施形態に係る車両用前照灯10の構成を示す断面図である。車両用前照灯10は、灯具ボディ12、前面カバー14、および灯具ユニット16を有する。以下、図1において左側を灯具前方、右側を灯具後方として説明する。また、灯具前方にみて右側を灯具右側、左側を灯具左側という。図1は、灯具ユニット16の光軸を含む鉛直平面によって切断された車両用前照灯10を灯具左側から見た断面を示している。なお、車両用前照灯10が車両に装着される場合、車両には互いに左右対称に形成された車両用前照灯10が車両左前方および右前方のそれぞれに設けられる。図1は、左右いずれかの車両用前照灯10の構成を示している。
図4は、第2の実施形態に係る発光素子ユニット80の断面図である。以下、特に言及しない限り、車両用前照灯10および発光モジュール40の構成は第1の実施形態と同様である。以下、第1の実施形態と同様の個所については同一の符号を付して説明を省略する。
図5は、第3の実施形態に係る発光素子ユニット100の断面図である。以下、特に言及しない限り、車両用前照灯10および発光モジュール40の構成は第1の実施形態と同様である。以下、上述の実施形態と同様の個所については同一の符号を付して説明を省略する。
図6は、第4の実施形態に係る発光素子ユニット120の断面図である。以下、特に言及しない限り、車両用前照灯10および発光モジュール40の構成は第1の実施形態と同様である。また、上述の実施形態と同様の個所については同一の符号を付して説明を省略する。
図7は、第5の実施形態に係る発光素子ユニット140の断面図である。以下、特に言及しない限り、車両用前照灯10および発光モジュール40の構成は第1の実施形態と同様である。また、上述の実施形態と同様の個所については同一の符号を付して説明を省略する。
図8は、第6の実施形態に係る発光素子ユニット160の断面図である。以下、特に言及しない限り、車両用前照灯10および発光モジュール40の構成は第1の実施形態と同様である。以下、上述の実施形態と同様の個所については同一の符号を付して説明を省略する。
図9は、第7の実施形態に係る発光モジュール基板170の構成を示す図である。以下、特に言及しない限り、車両用前照灯の構成は第1の実施形態と同様である。また、上述の実施形態と同様の個所については同一の符号を付して説明を省略する。
図11は、第8の実施形態に係る発光素子ユニット200の断面図である。以下、上述の実施形態と同様の個所については同一の符号を付して説明を省略する。
図12は、第9の実施形態に係る発光素子ユニット220の断面図である。以下、上述の実施形態と同様の個所については同一の符号を付して説明を省略する。
図13は、第10の実施形態に係る発光素子ユニット240の断面図である。以下、上述の実施形態と同様の個所については同一の符号を付して説明を省略する。
図14は、第11の実施形態に係る発光素子ユニット260の断面図である。以下、上述の実施形態と同様の個所については同一の符号を付して説明を省略する。
図15は、第12の実施形態に係る発光素子ユニット280の断面図である。以下、上述の実施形態と同様の個所については同一の符号を付して説明を省略する。
Claims (3)
- ある波長範囲の光を波長変換して出射する板状の光波長変換部材と、
前記光波長変換部材の両面のうち一方の面側に設けられている透光性を有する透明電極と、
前記透明電極の両面のうち前記光波長変換部材が設けられている側と反対側の面に設けられているバッファ層と、
前記バッファ層上に結晶成長し、電圧が印加されることにより前記波長範囲の少なくとも一部を含む光を発するよう設けられている半導体層と、
前記透明電極の両面のうち前記光波長変換部材が設けられている側と同じ側の面に設けられた第1電極と、
前記半導体層の両面のうち前記バッファ層が設けられている側と反対側の面に設けられ、前記第1電極との間に電圧が印加されることにより前記半導体層を発光させる第2電極と、を備え、
前記バッファ層は、
GaN、AlN、ZnO、SiC、ZrB 2 からなる群より選択される少なくとも一つの導電性材料により前記透明電極上に形成されており、発光のための電圧を前記半導体層に印加可能に設けられており、
前記第1電極は、前記光波長変換部材を貫通するように設けられていることを特徴とする発光モジュール。 - ある波長範囲の光を波長変換して出射する板状の光波長変換部材の両面のうち一方の面側に透光性を有する透明電極を形成させる工程と、
前記透明電極の両面のうち前記光波長変換部材が設けられている側と反対側の面にバッファ層を形成させる工程と、
前記バッファ層上に、電圧が印加されることにより前記波長範囲の少なくとも一部を含む光を発する半導体層を結晶成長させる工程と、
前記光波長変換部材を貫通するよう第1電極を設ける工程と、
前記半導体層の両面のうち前記バッファ層が設けられている側と反対側の面に、前記第1電極との間に電圧が印加されることにより前記半導体層を発光させる第2電極を形成させる工程と、を備え、
前記バッファ層を形成させる工程は、前記透明電極上にバッファ層を形成させる工程を含み、
前記バッファ層は、GaN、AlN、ZnO、SiC、ZrB 2 からなる群より選択される少なくとも一つの導電性材料によって形成され、発光のための電圧を前記半導体層に印加可能に設けられており、
前記第1電極は、前記透明電極と接していることを特徴とする発光モジュールの製造方法。 - ある波長範囲の光を波長変換して出射する板状の光波長変換部材と、前記光波長変換部材の両面のうち一方の面側に設けられている透光性を有する透明電極と、前記透明電極の両面のうち前記光波長変換部材が設けられている側と反対側の面に設けられているバッファ層と、前記バッファ層上に結晶成長し、電圧が印加されることにより前記波長範囲の少なくとも一部を含む光を発するよう設けられている半導体層と、前記透明電極の両面のうち前記光波長変換部材が設けられている側と同じ側の面に設けられた第1電極と、前記半導体層の両面のうち前記バッファ層が設けられている側と反対側の面に設けられ、前記第1電極との間に電圧が印加されることにより前記半導体層を発光させる第2電極と、を有する発光モジュールと、
前記発光モジュールから出射された光を集光する光学部材と、を備え、
前記バッファ層は、
GaN、AlN、ZnO、SiC、ZrB 2 からなる群より選択される少なくとも一つの導電性材料により前記透明電極上に形成されており、発光のための電圧を前記半導体層に印加可能に設けられており、
前記第1電極は、前記光波長変換部材を貫通するように設けられていることを特徴とする灯具ユニット。
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