JP5983236B2 - 半導体記憶装置 - Google Patents

半導体記憶装置 Download PDF

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Publication number
JP5983236B2
JP5983236B2 JP2012210399A JP2012210399A JP5983236B2 JP 5983236 B2 JP5983236 B2 JP 5983236B2 JP 2012210399 A JP2012210399 A JP 2012210399A JP 2012210399 A JP2012210399 A JP 2012210399A JP 5983236 B2 JP5983236 B2 JP 5983236B2
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Japan
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memory
voltage
signal
line
source
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JP2012210399A
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English (en)
Japanese (ja)
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JP2014067461A (ja
JP2014067461A5 (enExample
Inventor
竹内　淳
淳 竹内
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Socionext Inc
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Socionext Inc
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Application filed by Socionext Inc filed Critical Socionext Inc
Priority to JP2012210399A priority Critical patent/JP5983236B2/ja
Priority to US14/031,911 priority patent/US9417818B2/en
Publication of JP2014067461A publication Critical patent/JP2014067461A/ja
Publication of JP2014067461A5 publication Critical patent/JP2014067461A5/ja
Application granted granted Critical
Publication of JP5983236B2 publication Critical patent/JP5983236B2/ja
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
    • G06F3/0671—In-line storage system
    • G06F3/0673—Single storage device
    • G06F3/0679—Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
    • G06F3/061—Improving I/O performance
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0638—Organizing or formatting or addressing of data
    • G06F3/064—Management of blocks
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G11C16/3427—Circuits or methods to prevent or reduce disturbance of the state of a memory cell when neighbouring cells are read or written

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Human Computer Interaction (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Read Only Memory (AREA)
JP2012210399A 2012-09-25 2012-09-25 半導体記憶装置 Active JP5983236B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2012210399A JP5983236B2 (ja) 2012-09-25 2012-09-25 半導体記憶装置
US14/031,911 US9417818B2 (en) 2012-09-25 2013-09-19 Semiconductor memory for capacitively biasing multiple source lines

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012210399A JP5983236B2 (ja) 2012-09-25 2012-09-25 半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2014067461A JP2014067461A (ja) 2014-04-17
JP2014067461A5 JP2014067461A5 (enExample) 2015-07-16
JP5983236B2 true JP5983236B2 (ja) 2016-08-31

Family

ID=50340073

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012210399A Active JP5983236B2 (ja) 2012-09-25 2012-09-25 半導体記憶装置

Country Status (2)

Country Link
US (1) US9417818B2 (enExample)
JP (1) JP5983236B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6102146B2 (ja) * 2012-09-25 2017-03-29 株式会社ソシオネクスト 半導体記憶装置
US9997253B1 (en) * 2016-12-08 2018-06-12 Cypress Semiconductor Corporation Non-volatile memory array with memory gate line and source line scrambling
US10062440B1 (en) 2017-06-20 2018-08-28 Winbond Electronics Corp. Non-volatile semiconductor memory device and reading method thereof
CN112614533B (zh) * 2021-01-06 2021-11-02 长江存储科技有限责任公司 用于半导体器件的编程方法及半导体器件

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5687345A (en) 1992-03-17 1997-11-11 Hitachi, Ltd. Microcomputer having CPU and built-in flash memory that is rewritable under control of the CPU analyzing a command supplied from an external device
JP3534781B2 (ja) 1992-03-19 2004-06-07 株式会社ルネサステクノロジ マイクロコンピュータ、及びフラッシュメモリ
JPH06314495A (ja) 1993-04-28 1994-11-08 Hitachi Ltd 半導体記憶装置
US5657268A (en) * 1995-11-20 1997-08-12 Texas Instruments Incorporated Array-source line, bitline and wordline sequence in flash operations
US6300183B1 (en) * 1999-03-19 2001-10-09 Microchip Technology Incorporated Independently programmable memory segments within a PMOS electrically erasable programmable read only memory array achieved by N-well separation and method therefor
JP2001291392A (ja) 2000-04-10 2001-10-19 Matsushita Electric Ind Co Ltd 不揮発性半導体記憶装置
JP2003123493A (ja) 2001-10-12 2003-04-25 Fujitsu Ltd ソース電位を制御してプログラム動作を最適化した不揮発性メモリ
JP4240925B2 (ja) 2002-07-03 2009-03-18 パナソニック株式会社 半導体記憶装置及びその書き込み方法
JP3962769B2 (ja) * 2004-11-01 2007-08-22 株式会社Ｇｅｎｕｓｉｏｎ 不揮発性半導体記憶装置およびその書込方法
JP4764142B2 (ja) * 2005-11-11 2011-08-31 株式会社東芝 半導体記憶装置
JP5059437B2 (ja) 2007-02-06 2012-10-24 株式会社Ｇｅｎｕｓｉｏｎ 不揮発性半導体記憶装置
US7894263B2 (en) * 2007-09-28 2011-02-22 Sandisk Corporation High voltage generation and control in source-side injection programming of non-volatile memory
JP5483826B2 (ja) * 2008-03-04 2014-05-07 株式会社Ｇｅｎｕｓｉｏｎ 不揮発性半導体記憶装置及びその書き込み方法
JP5174493B2 (ja) 2008-03-06 2013-04-03 株式会社日立製作所 半導体集積回路装置及びアイ開口マージン評価方法
KR101644979B1 (ko) * 2010-02-01 2016-08-03 삼성전자주식회사 불휘발성 메모리 장치 및 그것의 읽기 방법
JP2013004123A (ja) * 2011-06-14 2013-01-07 Toshiba Corp 不揮発性半導体記憶装置
JP6102146B2 (ja) * 2012-09-25 2017-03-29 株式会社ソシオネクスト 半導体記憶装置

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Publication number Publication date
US9417818B2 (en) 2016-08-16
JP2014067461A (ja) 2014-04-17
US20140089570A1 (en) 2014-03-27

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