JP2014067461A5 - - Google Patents

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Publication number
JP2014067461A5
JP2014067461A5 JP2012210399A JP2012210399A JP2014067461A5 JP 2014067461 A5 JP2014067461 A5 JP 2014067461A5 JP 2012210399 A JP2012210399 A JP 2012210399A JP 2012210399 A JP2012210399 A JP 2012210399A JP 2014067461 A5 JP2014067461 A5 JP 2014067461A5
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JP
Japan
Prior art keywords
signal
input
gate
source line
nmos
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JP2012210399A
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English (en)
Japanese (ja)
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JP2014067461A (ja
JP5983236B2 (ja
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Priority to JP2012210399A priority Critical patent/JP5983236B2/ja
Priority claimed from JP2012210399A external-priority patent/JP5983236B2/ja
Priority to US14/031,911 priority patent/US9417818B2/en
Publication of JP2014067461A publication Critical patent/JP2014067461A/ja
Publication of JP2014067461A5 publication Critical patent/JP2014067461A5/ja
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JP2012210399A 2012-09-25 2012-09-25 半導体記憶装置 Active JP5983236B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2012210399A JP5983236B2 (ja) 2012-09-25 2012-09-25 半導体記憶装置
US14/031,911 US9417818B2 (en) 2012-09-25 2013-09-19 Semiconductor memory for capacitively biasing multiple source lines

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012210399A JP5983236B2 (ja) 2012-09-25 2012-09-25 半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2014067461A JP2014067461A (ja) 2014-04-17
JP2014067461A5 true JP2014067461A5 (enExample) 2015-07-16
JP5983236B2 JP5983236B2 (ja) 2016-08-31

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JP2012210399A Active JP5983236B2 (ja) 2012-09-25 2012-09-25 半導体記憶装置

Country Status (2)

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US (1) US9417818B2 (enExample)
JP (1) JP5983236B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6102146B2 (ja) * 2012-09-25 2017-03-29 株式会社ソシオネクスト 半導体記憶装置
US9997253B1 (en) * 2016-12-08 2018-06-12 Cypress Semiconductor Corporation Non-volatile memory array with memory gate line and source line scrambling
US10062440B1 (en) 2017-06-20 2018-08-28 Winbond Electronics Corp. Non-volatile semiconductor memory device and reading method thereof
CN112614533B (zh) * 2021-01-06 2021-11-02 长江存储科技有限责任公司 用于半导体器件的编程方法及半导体器件

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5687345A (en) 1992-03-17 1997-11-11 Hitachi, Ltd. Microcomputer having CPU and built-in flash memory that is rewritable under control of the CPU analyzing a command supplied from an external device
JP3534781B2 (ja) 1992-03-19 2004-06-07 株式会社ルネサステクノロジ マイクロコンピュータ、及びフラッシュメモリ
JPH06314495A (ja) 1993-04-28 1994-11-08 Hitachi Ltd 半導体記憶装置
US5657268A (en) * 1995-11-20 1997-08-12 Texas Instruments Incorporated Array-source line, bitline and wordline sequence in flash operations
US6300183B1 (en) * 1999-03-19 2001-10-09 Microchip Technology Incorporated Independently programmable memory segments within a PMOS electrically erasable programmable read only memory array achieved by N-well separation and method therefor
JP2001291392A (ja) 2000-04-10 2001-10-19 Matsushita Electric Ind Co Ltd 不揮発性半導体記憶装置
JP2003123493A (ja) 2001-10-12 2003-04-25 Fujitsu Ltd ソース電位を制御してプログラム動作を最適化した不揮発性メモリ
JP4240925B2 (ja) 2002-07-03 2009-03-18 パナソニック株式会社 半導体記憶装置及びその書き込み方法
JP3962769B2 (ja) * 2004-11-01 2007-08-22 株式会社Ｇｅｎｕｓｉｏｎ 不揮発性半導体記憶装置およびその書込方法
JP4764142B2 (ja) * 2005-11-11 2011-08-31 株式会社東芝 半導体記憶装置
JP5059437B2 (ja) 2007-02-06 2012-10-24 株式会社Ｇｅｎｕｓｉｏｎ 不揮発性半導体記憶装置
US7894263B2 (en) * 2007-09-28 2011-02-22 Sandisk Corporation High voltage generation and control in source-side injection programming of non-volatile memory
JP5483826B2 (ja) * 2008-03-04 2014-05-07 株式会社Ｇｅｎｕｓｉｏｎ 不揮発性半導体記憶装置及びその書き込み方法
JP5174493B2 (ja) 2008-03-06 2013-04-03 株式会社日立製作所 半導体集積回路装置及びアイ開口マージン評価方法
KR101644979B1 (ko) * 2010-02-01 2016-08-03 삼성전자주식회사 불휘발성 메모리 장치 및 그것의 읽기 방법
JP2013004123A (ja) * 2011-06-14 2013-01-07 Toshiba Corp 不揮発性半導体記憶装置
JP6102146B2 (ja) * 2012-09-25 2017-03-29 株式会社ソシオネクスト 半導体記憶装置

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