JP5953884B2 - サファイア単結晶の製造方法 - Google Patents

サファイア単結晶の製造方法 Download PDF

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Publication number
JP5953884B2
JP5953884B2 JP2012081574A JP2012081574A JP5953884B2 JP 5953884 B2 JP5953884 B2 JP 5953884B2 JP 2012081574 A JP2012081574 A JP 2012081574A JP 2012081574 A JP2012081574 A JP 2012081574A JP 5953884 B2 JP5953884 B2 JP 5953884B2
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JP
Japan
Prior art keywords
crystal
single crystal
sapphire single
sapphire
crucible
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Expired - Fee Related
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JP2012081574A
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English (en)
Japanese (ja)
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JP2013209257A5 (enExample
JP2013209257A (ja
Inventor
渉 杉村
渉 杉村
光二 松本
光二 松本
藤原　俊幸
俊幸 藤原
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Sumco Corp
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Sumco Corp
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Priority to JP2012081574A priority Critical patent/JP5953884B2/ja
Priority to KR1020130003851A priority patent/KR101501036B1/ko
Priority to CN2013101069673A priority patent/CN103361727A/zh
Publication of JP2013209257A publication Critical patent/JP2013209257A/ja
Publication of JP2013209257A5 publication Critical patent/JP2013209257A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2012081574A 2012-03-30 2012-03-30 サファイア単結晶の製造方法 Expired - Fee Related JP5953884B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2012081574A JP5953884B2 (ja) 2012-03-30 2012-03-30 サファイア単結晶の製造方法
KR1020130003851A KR101501036B1 (ko) 2012-03-30 2013-01-14 사파이어 단결정 및 그의 제조 방법
CN2013101069673A CN103361727A (zh) 2012-03-30 2013-03-29 蓝宝石单晶及其制备方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012081574A JP5953884B2 (ja) 2012-03-30 2012-03-30 サファイア単結晶の製造方法

Publications (3)

Publication Number Publication Date
JP2013209257A JP2013209257A (ja) 2013-10-10
JP2013209257A5 JP2013209257A5 (enExample) 2015-04-09
JP5953884B2 true JP5953884B2 (ja) 2016-07-20

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JP2012081574A Expired - Fee Related JP5953884B2 (ja) 2012-03-30 2012-03-30 サファイア単結晶の製造方法

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JP (1) JP5953884B2 (enExample)
KR (1) KR101501036B1 (enExample)
CN (1) CN103361727A (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5650869B1 (ja) * 2013-03-21 2015-01-07 株式会社アライドマテリアル サファイア単結晶育成用坩堝およびサファイア単結晶育成方法
KR101532265B1 (ko) 2013-12-03 2015-06-29 주식회사 엘지실트론 단결정 성장 장치
CN104651935B (zh) * 2014-10-17 2017-06-13 洛阳西格马炉业股份有限公司 一种坩埚上升法制备高品质蓝宝石晶体的方法
CN109112631B (zh) * 2018-10-29 2021-01-01 浙江昀丰新材料科技股份有限公司 一种蓝宝石c向长晶方法
CN111394786A (zh) * 2020-03-25 2020-07-10 哈尔滨奥瑞德光电技术有限公司 一种用于泡生法生长蓝宝石单晶的异形籽晶结构及其生长方法
CN115233299A (zh) * 2022-07-14 2022-10-25 露笑新能源技术有限公司 一种泡生法生长蓝宝石的引晶方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09278592A (ja) * 1996-04-18 1997-10-28 Mitsubishi Heavy Ind Ltd チタンを含む酸化アルミニウム単結晶の製造方法
JP2006151745A (ja) * 2004-11-29 2006-06-15 Kyocera Corp 単結晶の製造方法及びそれらを用いた酸化物単結晶
JP4940610B2 (ja) * 2005-09-29 2012-05-30 住友金属鉱山株式会社 サファイア単結晶の育成方法
JP2008007353A (ja) * 2006-06-28 2008-01-17 Sumitomo Metal Mining Co Ltd サファイア単結晶育成装置およびそれを用いた育成方法
JP4810346B2 (ja) * 2006-07-31 2011-11-09 株式会社信光社 サファイア単結晶の製造方法
JP4905171B2 (ja) * 2007-02-14 2012-03-28 住友金属鉱山株式会社 酸化アルミニウム単結晶の製造方法及びこの方法を用いて得られる酸化アルミニウム単結晶
JP4844429B2 (ja) * 2007-02-26 2011-12-28 日立化成工業株式会社 サファイア単結晶の製造方法
JP2008266078A (ja) * 2007-04-23 2008-11-06 Shin Etsu Chem Co Ltd サファイア単結晶の製造方法
JP4835582B2 (ja) * 2007-11-16 2011-12-14 住友金属鉱山株式会社 酸化アルミニウム単結晶の製造方法
JP5004881B2 (ja) * 2008-06-27 2012-08-22 京セラ株式会社 単結晶育成装置用坩堝、単結晶育成方法、および単結晶育成装置
JP2010143781A (ja) * 2008-12-17 2010-07-01 Showa Denko Kk サファイア単結晶の製造方法
JP2010150056A (ja) * 2008-12-24 2010-07-08 Showa Denko Kk サファイア単結晶の製造方法
JP2010189242A (ja) * 2009-02-20 2010-09-02 Showa Denko Kk サファイア単結晶の製造方法およびサファイア単結晶引き上げ装置
JP2011032104A (ja) * 2009-07-29 2011-02-17 Showa Denko Kk サファイア単結晶およびサファイア単結晶の製造方法

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Publication number Publication date
JP2013209257A (ja) 2013-10-10
KR101501036B1 (ko) 2015-03-10
KR20130111253A (ko) 2013-10-10
CN103361727A (zh) 2013-10-23

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