JP5923243B2 - 印刷回路基板の製造方法及びこれを含む半導体パッケージの製造方法 - Google Patents
印刷回路基板の製造方法及びこれを含む半導体パッケージの製造方法 Download PDFInfo
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- JP5923243B2 JP5923243B2 JP2011037985A JP2011037985A JP5923243B2 JP 5923243 B2 JP5923243 B2 JP 5923243B2 JP 2011037985 A JP2011037985 A JP 2011037985A JP 2011037985 A JP2011037985 A JP 2011037985A JP 5923243 B2 JP5923243 B2 JP 5923243B2
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- Condensed Matter Physics & Semiconductors (AREA)
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- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Wire Bonding (AREA)
Description
101 接着剤層
100P プリPCB
105,105a,105b 金属薄膜
110,110a,110b ボディ樹脂
120,120a,120b 配線パターン
122,122’,122a,122b 貫通コンタクト
130,130a,130b ソルダ・レジスト
140 金メッキパッド
200 半導体チップ
220 接着剤
230 ボンディング・ワイヤ
240 連結ワイヤ
250 バンプ
252 微細バンプ
254 バンプパッド
300 密封材
310 アンダーフィル
320 外部密封樹脂
400 ソルダボール
500 電気電子装置
510 制御部
520 入出力部
530 メモリ部
540 インターフェース部
550 バス
1000,1000a,1000b,1000c 半導体パッケージ
A,A’ ソルダボール・ランド
B,B’ バンプ・ランド
H 開口部
Claims (15)
- 少なくとも1層の金属薄膜を形成する段階と、
前記金属薄膜上に配線パターンを形成する段階と、
前記配線パターンの所定部分に少なくとも1つのスルーホール・コンタクトを形成する段階と、
前記少なくとも1つのスルーホール・コンタクト及び前記配線パターン上に、ボディ樹脂層を形成する段階と、
前記少なくとも1層の金属薄膜を除去する段階と、
前記ボディ樹脂層の上面上及び下面上にソルダ・レジストを塗布する段階と、
前記配線パターンに、ソルダボール・ランドを形成する段階と、を有し、
前記少なくとも1つのスルーホール・コンタクトの露出した表面は、バンプ・ランドに対応し、
前記スルーホール・コンタクトは、前記配線パターンのうちの選択された部分に所定の高さで形成されて前記バンプ・ランドに利用され、
前記少なくとも1つのスルーホール・コンタクトを形成する段階で、
前記スルーホール・コンタクトが前記ボディ樹脂層の外部に突出するように、前記配線パターン及び前記スルーホール・コンタクトの高さが、前記ボディ樹脂層の厚みよりさらに大きくなるように形成されることを特徴とする印刷回路基板の製造方法。 - 前記配線パターン及び前記少なくとも1つのスルーホール・コンタクトは、メッキを介して形成することを特徴とする請求項1に記載の印刷回路基板の製造方法。
- 前記少なくとも1層の金属薄膜を形成する段階は、
接着剤層両面に2層の金属薄膜を形成することを含むことを特徴とする請求項1に記載の印刷回路基板の製造方法。 - 前記ボディ樹脂層を形成する段階は、
前記少なくとも1つのスルーホール・コンタクトが前記ボディ樹脂層を貫通するように、前記ボディ樹脂層を、前記少なくとも1つのスルーホール・コンタクト及び前記配線パターンに圧着させることを含むことを特徴とする請求項1に記載の印刷回路基板の製造方法。 - 前記ソルダ・レジストを塗布する段階は、
前記ソルダボール・ランドまたはバンプ・ランドに対応する開口部を形成する段階を含むことを特徴とする請求項1に記載の印刷回路基板の製造方法。 - 前記ボディ樹脂層は、プリプレグ、熱硬化性エポキシ、熱可塑性エポキシ及びフィラを含有した樹脂のうちいずれか1つの樹脂から形成されたことを特徴とする請求項1に記載の印刷回路基板の製造方法。
- 少なくとも1層の金属薄膜を形成する段階、前記金属薄膜上に配線パターンを形成する段階、前記配線パターンの所定部分に少なくとも1つのスルーホール・コンタクトを形成する段階、前記少なくとも1つのスルーホール・コンタクト及び前記配線パターン上に、ボディ樹脂層を形成する段階、前記少なくとも1層の金属薄膜を除去する段階、前記ボディ樹脂層の上面上及び下面上にソルダ・レジストを塗布する段階、及び前記配線パターンにソルダボール・ランドを形成する段階を具備した印刷回路基板を製造する段階と、
前記印刷回路基板上にフリップチップ・ボンディングによって半導体チップを実装する段階と、
前記半導体チップを密封する密封材を形成する段階と、を有し、
前記少なくとも1つのスルーホール・コンタクトの露出した表面は、バンプ・ランドに対応し、
前記少なくとも1つのスルーホール・コンタクトは、前記配線パターンのうちの選択された部分に所定の高さで形成されて前記バンプ・ランドに利用され、
前記少なくとも1つのスルーホール・コンタクトを形成する段階で、
前記スルーホール・コンタクトが前記ボディ樹脂層の外部に突出するように、前記配線パターン及び前記スルーホール・コンタクトの高さが、前記ボディ樹脂層の厚みよりさらに大きくなるように形成され、
前記半導体チップを実装する段階は、
前記バンプ・ランドを利用して、前記半導体チップを前記少なくとも1つのスルーホール・コンタクトに結合させることを含むことを特徴とする半導体パッケージの製造方法。 - 前記密封材を形成する段階は、
MUF(molded underfill)工程を含むことを特徴とする請求項7に記載の半導体パッケージの製造方法。 - 前記密封材を形成する段階は、
前記半導体チップと前記印刷回路基板との間の空間に、アンダーフィルを充填する段階と、
前記半導体チップ外部を密封する外部密封樹脂を形成する段階と、を含むことを特徴とする請求項7に記載の半導体パッケージの製造方法。 - 前記密封材を形成する段階後に、ソルダボール・ランドにソルダボールを形成する段階を含むことを特徴とする請求項7に記載の半導体パッケージの製造方法。
- 前記配線パターンと前記少なくとも1つのスルーホール・コンタクトは、メッキを介して形成することを特徴とする請求項7に記載の半導体パッケージの製造方法。
- 前記少なくとも1層の金属薄膜を形成する段階は、接着剤層の両面に2層の金属薄膜を形成することを含むことを特徴とする請求項7に記載の半導体パッケージの製造方法。
- 前記ボディ樹脂層を形成する段階は、前記少なくとも1つのスルーホール・コンタクトが前記ボディ樹脂層を貫通するように、前記ボディ樹脂層を、前記少なくとも1つのスルーホール・コンタクト及び前記配線パターンに圧着させることを含むことを特徴とする請求項7に記載の半導体パッケージの製造方法。
- 接着剤薄膜の第1面に、第1金属薄膜を形成する段階と、
前記接着剤薄膜の第2面に、第2金属薄膜を形成する段階と、
それぞれの前記第1金属薄膜及び第2金属薄膜上に配線パターンを形成する段階と、
前記配線パターンの所定部分上に、スルーホール・コンタクトを形成する段階と、
それぞれの前記第1金属薄膜及び第2金属薄膜上に、圧着を介して、ボディ樹脂層を結合させる段階と、
前記接着剤薄膜を除去し、2個のプリ印刷回路基板に分離する段階と、
前記分離されたそれぞれのプリ印刷回路基板のボディ樹脂層の上面上及び下面上に、ソルダ・レジストを塗布する段階と、
前記それぞれのプリ印刷回路基板の配線パターンにソルダボール・ランドを形成する段階と、を有し、
前記少なくとも1つのスルーホール・コンタクトの露出した表面は、バンプ・ランドに対応し、
前記スルーホール・コンタクトは、前記配線パターンのうちの選択された部分に所定の高さで形成されて前記バンプ・ランドに利用され、
前記配線パターンの所定部分上に、スルーホール・コンタクトを形成する段階で
前記スルーホール・コンタクトが前記ボディ樹脂層の外部に突出するように、前記配線パターン及び前記スルーホール・コンタクトの高さが、前記ボディ樹脂層の厚みよりさらに大きくなるように形成されることを特徴とする少なくとも2枚の印刷回路基板の製造方法。 - 前記接着剤薄膜を除去する段階後に、第1金属薄膜及び第2金属薄膜を除去する段階をさらに含むことを特徴とする請求項14に記載の少なくとも2枚の印刷回路基板の製造方法。
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KR1020100017197A KR101678052B1 (ko) | 2010-02-25 | 2010-02-25 | 단층 배선 패턴을 포함한 인쇄회로기판(pcb), pcb를 포함한 반도체 패키지, 반도체 패키지를 포함한 전기전자장치, pcb제조방법, 및 반도체 패키지 제조방법 |
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-
2010
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- 2011-02-25 CN CN201110046014.3A patent/CN102196663B/zh active Active
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US20110207266A1 (en) | 2011-08-25 |
KR20110097382A (ko) | 2011-08-31 |
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US20120307445A1 (en) | 2012-12-06 |
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