JP5889760B2 - 基板の研磨異常検出方法および研磨装置 - Google Patents

基板の研磨異常検出方法および研磨装置 Download PDF

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Publication number
JP5889760B2
JP5889760B2 JP2012209499A JP2012209499A JP5889760B2 JP 5889760 B2 JP5889760 B2 JP 5889760B2 JP 2012209499 A JP2012209499 A JP 2012209499A JP 2012209499 A JP2012209499 A JP 2012209499A JP 5889760 B2 JP5889760 B2 JP 5889760B2
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Japan
Prior art keywords
polishing
wafer
substrate
tape
detection method
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Active
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JP2012209499A
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English (en)
Japanese (ja)
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JP2014061580A (ja
JP2014061580A5 (https=
Inventor
哲二 戸川
哲二 戸川
関　正也
正也 関
宏行 竹中
宏行 竹中
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Ebara Corp
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Ebara Corp
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Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Priority to JP2012209499A priority Critical patent/JP5889760B2/ja
Priority to KR1020130110994A priority patent/KR101664532B1/ko
Priority to US14/034,488 priority patent/US9248543B2/en
Priority to TW106112213A priority patent/TWI611871B/zh
Priority to TW102134256A priority patent/TWI584915B/zh
Publication of JP2014061580A publication Critical patent/JP2014061580A/ja
Priority to US14/987,434 priority patent/US9782869B2/en
Publication of JP2014061580A5 publication Critical patent/JP2014061580A5/ja
Priority to JP2016027608A priority patent/JP6077152B2/ja
Application granted granted Critical
Publication of JP5889760B2 publication Critical patent/JP5889760B2/ja
Priority to KR1020160126049A priority patent/KR101810331B1/ko
Priority to US15/654,594 priority patent/US10343252B2/en
Active legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B21/00—Machines or devices using grinding or polishing belts; Accessories therefor
    • B24B21/002—Machines or devices using grinding or polishing belts; Accessories therefor for grinding edges or bevels
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
    • B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
    • B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
    • B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
JP2012209499A 2012-09-24 2012-09-24 基板の研磨異常検出方法および研磨装置 Active JP5889760B2 (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP2012209499A JP5889760B2 (ja) 2012-09-24 2012-09-24 基板の研磨異常検出方法および研磨装置
KR1020130110994A KR101664532B1 (ko) 2012-09-24 2013-09-16 기판의 연마 이상 검출 방법 및 연마 장치
US14/034,488 US9248543B2 (en) 2012-09-24 2013-09-23 Method of detecting abnormality in polishing of a substrate and polishing apparatus
TW106112213A TWI611871B (zh) 2012-09-24 2013-09-24 基板的研磨異常檢測方法及研磨裝置
TW102134256A TWI584915B (zh) 2012-09-24 2013-09-24 Method for detecting abrasive anomaly of substrate and grinding device
US14/987,434 US9782869B2 (en) 2012-09-24 2016-01-04 Apparatus for detecting abnormality in polishing of a substrate
JP2016027608A JP6077152B2 (ja) 2012-09-24 2016-02-17 研磨装置
KR1020160126049A KR101810331B1 (ko) 2012-09-24 2016-09-30 연마 장치
US15/654,594 US10343252B2 (en) 2012-09-24 2017-07-19 Polishing apparatus for detecting abnormality in polishing of a substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012209499A JP5889760B2 (ja) 2012-09-24 2012-09-24 基板の研磨異常検出方法および研磨装置

Related Child Applications (1)

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JP2016027608A Division JP6077152B2 (ja) 2012-09-24 2016-02-17 研磨装置

Publications (3)

Publication Number Publication Date
JP2014061580A JP2014061580A (ja) 2014-04-10
JP2014061580A5 JP2014061580A5 (https=) 2016-01-28
JP5889760B2 true JP5889760B2 (ja) 2016-03-22

Family

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JP2012209499A Active JP5889760B2 (ja) 2012-09-24 2012-09-24 基板の研磨異常検出方法および研磨装置
JP2016027608A Active JP6077152B2 (ja) 2012-09-24 2016-02-17 研磨装置

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JP2016027608A Active JP6077152B2 (ja) 2012-09-24 2016-02-17 研磨装置

Country Status (4)

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US (3) US9248543B2 (https=)
JP (2) JP5889760B2 (https=)
KR (2) KR101664532B1 (https=)
TW (2) TWI584915B (https=)

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JP2015006709A (ja) * 2013-06-25 2015-01-15 株式会社ディスコ ウエーハの研削方法及び研削装置
JP2016058675A (ja) 2014-09-12 2016-04-21 株式会社東芝 研磨装置および半導体ウェハの研磨方法
JP6532884B2 (ja) * 2014-10-31 2019-06-19 株式会社荏原製作所 ワークピースを研磨するための化学機械研磨装置
JP2017148931A (ja) * 2016-02-19 2017-08-31 株式会社荏原製作所 研磨装置および研磨方法
JP2018114580A (ja) * 2017-01-17 2018-07-26 株式会社ディスコ ウエーハの加工方法及び切削装置
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CN108255129B (zh) * 2018-01-15 2020-08-28 中国工程物理研究院机械制造工艺研究所 一种工件抛光检测方法
US11131541B2 (en) * 2018-06-29 2021-09-28 Taiwan Semiconductor Manufacturing Co., Ltd. Shutter monitoring system
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JP7047797B2 (ja) * 2019-02-25 2022-04-05 株式会社Sumco 貼り合わせウェーハのテラス加工方法及びテラス加工装置
IT201900003011A1 (it) * 2019-03-01 2020-09-01 Soltek S R L Macchina per la rettifica di elementi lastriformi e relativo metodo
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JP7278153B2 (ja) * 2019-06-04 2023-05-19 東京エレクトロン株式会社 基板加工装置、および基板加工方法
CN111761420B (zh) * 2020-06-16 2021-10-15 上海中欣晶圆半导体科技有限公司 一种提高硅片倒角宽幅精度的方法
US20250178149A1 (en) * 2022-02-25 2025-06-05 Ebara Corporation Substrate polishing apparatus
US12519020B2 (en) * 2022-06-17 2026-01-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor processing tool and methods of operation
JP2024070925A (ja) * 2022-11-14 2024-05-24 株式会社荏原製作所 研磨装置
CN119369244B (zh) * 2024-12-30 2025-04-15 华海清科股份有限公司 晶圆边缘抛光方法和抛光装置

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Also Published As

Publication number Publication date
TW201726322A (zh) 2017-08-01
TWI584915B (zh) 2017-06-01
US20160114455A1 (en) 2016-04-28
KR101810331B1 (ko) 2017-12-18
US20170312879A1 (en) 2017-11-02
US9782869B2 (en) 2017-10-10
US9248543B2 (en) 2016-02-02
JP6077152B2 (ja) 2017-02-08
US20140087627A1 (en) 2014-03-27
KR20160119019A (ko) 2016-10-12
KR20140040012A (ko) 2014-04-02
TWI611871B (zh) 2018-01-21
KR101664532B1 (ko) 2016-10-10
JP2014061580A (ja) 2014-04-10
JP2016112683A (ja) 2016-06-23
US10343252B2 (en) 2019-07-09
TW201417952A (zh) 2014-05-16

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