TWI584915B - Method for detecting abrasive anomaly of substrate and grinding device - Google Patents

Method for detecting abrasive anomaly of substrate and grinding device Download PDF

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Publication number
TWI584915B
TWI584915B TW102134256A TW102134256A TWI584915B TW I584915 B TWI584915 B TW I584915B TW 102134256 A TW102134256 A TW 102134256A TW 102134256 A TW102134256 A TW 102134256A TW I584915 B TWI584915 B TW I584915B
Authority
TW
Taiwan
Prior art keywords
polishing
substrate
wafer
grinding
edge portion
Prior art date
Application number
TW102134256A
Other languages
English (en)
Chinese (zh)
Other versions
TW201417952A (zh
Inventor
戶川哲二
関正也
竹中宏行
Original Assignee
荏原製作所股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 荏原製作所股份有限公司 filed Critical 荏原製作所股份有限公司
Publication of TW201417952A publication Critical patent/TW201417952A/zh
Application granted granted Critical
Publication of TWI584915B publication Critical patent/TWI584915B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B21/00—Machines or devices using grinding or polishing belts; Accessories therefor
    • B24B21/002—Machines or devices using grinding or polishing belts; Accessories therefor for grinding edges or bevels
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
    • B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
    • B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
    • B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
TW102134256A 2012-09-24 2013-09-24 Method for detecting abrasive anomaly of substrate and grinding device TWI584915B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012209499A JP5889760B2 (ja) 2012-09-24 2012-09-24 基板の研磨異常検出方法および研磨装置

Publications (2)

Publication Number Publication Date
TW201417952A TW201417952A (zh) 2014-05-16
TWI584915B true TWI584915B (zh) 2017-06-01

Family

ID=50339280

Family Applications (2)

Application Number Title Priority Date Filing Date
TW102134256A TWI584915B (zh) 2012-09-24 2013-09-24 Method for detecting abrasive anomaly of substrate and grinding device
TW106112213A TWI611871B (zh) 2012-09-24 2013-09-24 基板的研磨異常檢測方法及研磨裝置

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW106112213A TWI611871B (zh) 2012-09-24 2013-09-24 基板的研磨異常檢測方法及研磨裝置

Country Status (4)

Country Link
US (3) US9248543B2 (https=)
JP (2) JP5889760B2 (https=)
KR (2) KR101664532B1 (https=)
TW (2) TWI584915B (https=)

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JP2015006709A (ja) * 2013-06-25 2015-01-15 株式会社ディスコ ウエーハの研削方法及び研削装置
JP2016058675A (ja) 2014-09-12 2016-04-21 株式会社東芝 研磨装置および半導体ウェハの研磨方法
JP6532884B2 (ja) * 2014-10-31 2019-06-19 株式会社荏原製作所 ワークピースを研磨するための化学機械研磨装置
JP2017148931A (ja) * 2016-02-19 2017-08-31 株式会社荏原製作所 研磨装置および研磨方法
JP2018114580A (ja) * 2017-01-17 2018-07-26 株式会社ディスコ ウエーハの加工方法及び切削装置
JP6920849B2 (ja) * 2017-03-27 2021-08-18 株式会社荏原製作所 基板処理方法および装置
CN108255129B (zh) * 2018-01-15 2020-08-28 中国工程物理研究院机械制造工艺研究所 一种工件抛光检测方法
US11131541B2 (en) * 2018-06-29 2021-09-28 Taiwan Semiconductor Manufacturing Co., Ltd. Shutter monitoring system
JP7121572B2 (ja) * 2018-07-20 2022-08-18 株式会社荏原製作所 研磨装置および研磨方法
JP7047797B2 (ja) * 2019-02-25 2022-04-05 株式会社Sumco 貼り合わせウェーハのテラス加工方法及びテラス加工装置
IT201900003011A1 (it) * 2019-03-01 2020-09-01 Soltek S R L Macchina per la rettifica di elementi lastriformi e relativo metodo
IT201900003001A1 (it) * 2019-03-01 2020-09-01 Soltek S R L Macchina per la rettifica di elementi lastriformi e relativo metodo
JP7278153B2 (ja) * 2019-06-04 2023-05-19 東京エレクトロン株式会社 基板加工装置、および基板加工方法
CN111761420B (zh) * 2020-06-16 2021-10-15 上海中欣晶圆半导体科技有限公司 一种提高硅片倒角宽幅精度的方法
US20250178149A1 (en) * 2022-02-25 2025-06-05 Ebara Corporation Substrate polishing apparatus
US12519020B2 (en) * 2022-06-17 2026-01-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor processing tool and methods of operation
JP2024070925A (ja) * 2022-11-14 2024-05-24 株式会社荏原製作所 研磨装置
CN119369244B (zh) * 2024-12-30 2025-04-15 华海清科股份有限公司 晶圆边缘抛光方法和抛光装置

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JP5889760B2 (ja) * 2012-09-24 2016-03-22 株式会社荏原製作所 基板の研磨異常検出方法および研磨装置
JP6013849B2 (ja) 2012-09-24 2016-10-25 株式会社荏原製作所 研磨方法
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Publication number Priority date Publication date Assignee Title
TW466153B (en) * 1999-06-22 2001-12-01 Applied Materials Inc Method and apparatus for measuring a pad profile and closed loop control of a pad conditioning process
US6402596B1 (en) * 2000-01-25 2002-06-11 Speedfam-Ipec Co., Ltd. Single-side polishing method for substrate edge, and apparatus therefor
JP2003285266A (ja) * 2002-03-27 2003-10-07 Toshiba Corp 研磨方法および研磨装置
US20120252320A1 (en) * 2011-03-28 2012-10-04 Masaya Seki Polishing apparatus and polishing method

Also Published As

Publication number Publication date
TW201726322A (zh) 2017-08-01
US20160114455A1 (en) 2016-04-28
KR101810331B1 (ko) 2017-12-18
US20170312879A1 (en) 2017-11-02
US9782869B2 (en) 2017-10-10
US9248543B2 (en) 2016-02-02
JP6077152B2 (ja) 2017-02-08
US20140087627A1 (en) 2014-03-27
KR20160119019A (ko) 2016-10-12
JP5889760B2 (ja) 2016-03-22
KR20140040012A (ko) 2014-04-02
TWI611871B (zh) 2018-01-21
KR101664532B1 (ko) 2016-10-10
JP2014061580A (ja) 2014-04-10
JP2016112683A (ja) 2016-06-23
US10343252B2 (en) 2019-07-09
TW201417952A (zh) 2014-05-16

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