JP5884921B2 - 圧力センサ装置および圧力センサ装置の製造方法 - Google Patents
圧力センサ装置および圧力センサ装置の製造方法 Download PDFInfo
- Publication number
- JP5884921B2 JP5884921B2 JP2014550110A JP2014550110A JP5884921B2 JP 5884921 B2 JP5884921 B2 JP 5884921B2 JP 2014550110 A JP2014550110 A JP 2014550110A JP 2014550110 A JP2014550110 A JP 2014550110A JP 5884921 B2 JP5884921 B2 JP 5884921B2
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- Prior art keywords
- resin case
- sensor chip
- pressure sensor
- sensor device
- pressure
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Images
Classifications
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- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
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- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
- H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/85444—Gold (Au) as principal constituent
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- H—ELECTRICITY
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
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- H01—ELECTRIC ELEMENTS
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10T29/00—Metal working
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- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
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- Computer Hardware Design (AREA)
- Power Engineering (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
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- Measuring Fluid Pressure (AREA)
Description
実施の形態1にかかる圧力センサ装置の構成について説明する。図1A,1Bは、実施の形態1にかかる圧力センサ装置の構成を示す断面図である。図1Aは全体図であり、図1Bは要部拡大断面図である。図2は、図1A,1Bの保護膜の分子構造の繰り返し単位を示す図式である。図1A,1Bに記載の圧力センサ装置は、樹脂ケース1に形成された凹状のセンサマウント部2内にセンサユニット10を収納した構成となっている。樹脂ケース1は、例えば、ポリフェニレンサルファイド(PPS)や、ポリビニレンテレフタレート(PBT)、ポリアセテート(POM)など機械的強度の高い樹脂成型部材であってもよい。センサユニット10は、半導体圧力センサチップ11とガラス台座12の一方の側とが接合されてなり、接着剤13によってガラス台座12の他方の側がセンサマウント部2の底部にダイボンディングされている。
次に、実施の形態2にかかる圧力センサ装置について説明する。図4は、実施の形態2にかかる圧力センサ装置の構成を示す断面図である。実施の形態2にかかる圧力センサ装置が実施の形態1にかかる圧力センサ装置と異なる点は、樹脂ケース1の内部をゲル状保護部材6で充填した点である。すなわち、保護膜5に覆われたセンサユニット10、リード端子3の樹脂ケース1内部に露出された部分、ボンディングワイヤ4、および樹脂ケース1の内壁1aの露出部分は、さらにゲル状保護部材6で覆われている。
1a 樹脂ケースの内壁
2 樹脂ケースのセンサマウント部
3 リード端子
4 ボンディングワイヤ
5 保護膜
10 センサユニット
11 半導体圧力センサチップ
11a 半導体圧力センサチップの感圧部
12 ガラス台座
13 接着剤
14 電極パッド
15 アルミニウム電極
16 密着性確保・拡散防止層
17 金電極
18 シリコン窒化膜
19 母材
20 ニッケルめっき
21 金めっき
Claims (11)
- 圧力を電気信号に変換するセンサチップと、
前記センサチップを収納する樹脂ケースと、
前記樹脂ケースの内部に一端が露出し、ワイヤを介して前記センサチップに接続され、前記センサチップから出力された前記電気信号を外部に取り出す信号端子と、
前記センサチップの感圧部、前記センサチップの電極パッド、前記信号端子の前記樹脂ケースの内部に露出された部分、前記ワイヤおよび前記樹脂ケースの内壁を覆う、フッ素を含むポリパラキシリレン系ポリマーからなる保護膜と、
を備えることを特徴とする圧力センサ装置。 - 前記保護膜は、前記センサチップ、前記信号端子の前記樹脂ケースの内部に露出された部分、前記ワイヤ、および前記樹脂ケースの内壁の露出部分の全表面を覆うことを特徴とする請求項1に記載の圧力センサ装置。
- 前記保護膜は、フッ素系ゲルからなる保護部材で覆われていることを特徴とする請求項1に記載の圧力センサ装置。
- 前記保護部材は、前記樹脂ケースの内部に充填され、
前記センサチップ、前記信号端子の前記樹脂ケースの内部に露出された部分および前記ワイヤは、前記保護部材に埋設されていることを特徴とする請求項3に記載の圧力センサ装置。 - 前記センサチップが半導体センサチップであることを特徴とする請求項1〜4のいずれか一つに記載の圧力センサ装置。
- 圧力を電気信号に変換するセンサチップと、前記センサチップを収納する樹脂ケースと、前記樹脂ケースの内部に一端が露出し、ワイヤを介して前記センサチップに接続され、前記センサチップから出力された前記電気信号を外部に取り出す信号端子と、を備えた圧力センサ装置の製造方法であって、
前記センサチップを前記樹脂ケースに収納する収納工程と、
前記センサチップと前記信号端子とをワイヤによって接続する接続工程と、
前記センサチップの感圧部、前記センサチップの電極パッド、前記信号端子の前記樹脂ケースの内部に露出された部分、前記ワイヤおよび前記樹脂ケースの内壁を、フッ素を含むポリパラキシリレン系ポリマーからなる保護膜で覆う被覆工程と、
を含むことを特徴とする圧力センサ装置の製造方法。 - 前記被覆工程では、フッ素を含むポリパラキシリレン系ポリマーを気化したガスに含まれるモノマー分子を減圧雰囲気において常温で蒸着し前記保護膜を形成することを特徴とする請求項6に記載の圧力センサ装置の製造方法。
- 前記被覆工程では、前記センサチップ、前記信号端子の前記樹脂ケースの内部に露出された部分、前記ワイヤ、および前記樹脂ケースの内壁の露出部分の全表面を前記保護膜で覆うことを特徴とする請求項6に記載の圧力センサ装置の製造方法。
- 前記被覆工程後、前記樹脂ケースの内部にフッ素系ゲルからなる保護部材を充填し、前記センサチップ、前記信号端子の前記樹脂ケースの内部に露出された部分および前記ワイヤを前記保護部材に埋設させることを特徴とする請求項6に記載の圧力センサ装置の製造方法。
- 前記被覆工程後で前記保護部材を充填する前に、前記保護膜に対して、前記保護膜表面の前記保護部材に対する濡れ性を向上させる改質処理をおこなうことを特徴とする請求項9に記載の圧力センサ装置の製造方法。
- 前記センサチップが半導体センサチップであることを特徴とする請求項6〜10のいずれか一つに記載の圧力センサ装置の製造方法。
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JP2014550110A JP5884921B2 (ja) | 2012-11-30 | 2013-11-11 | 圧力センサ装置および圧力センサ装置の製造方法 |
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JPH0873569A (ja) * | 1994-09-01 | 1996-03-19 | Fuji Electric Co Ltd | ポリパラキシリレンの被覆方法 |
JP3858577B2 (ja) * | 1999-09-17 | 2006-12-13 | 株式会社デンソー | 半導体圧力センサ装置 |
JP3858927B2 (ja) * | 1999-09-17 | 2006-12-20 | 株式会社デンソー | 半導体圧力センサ装置 |
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EP2927656B1 (en) | 2019-01-16 |
JPWO2014084033A1 (ja) | 2017-01-05 |
EP2927656A4 (en) | 2016-06-29 |
US10330552B2 (en) | 2019-06-25 |
CN104736984A (zh) | 2015-06-24 |
EP2927656A1 (en) | 2015-10-07 |
WO2014084033A1 (ja) | 2014-06-05 |
US20150219513A1 (en) | 2015-08-06 |
CN104736984B (zh) | 2017-09-08 |
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