CN113659057A - 一种半导体封装方法及其半导体结构 - Google Patents
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- 239000003292 glue Substances 0.000 claims abstract description 11
- 238000000576 coating method Methods 0.000 claims abstract description 10
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- 239000013078 crystal Substances 0.000 claims abstract description 4
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- 239000000853 adhesive Substances 0.000 claims description 8
- 230000001070 adhesive effect Effects 0.000 claims description 8
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- 229920000052 poly(p-xylylene) Polymers 0.000 claims description 5
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- 239000011521 glass Substances 0.000 claims description 4
- 238000003848 UV Light-Curing Methods 0.000 claims description 3
- 239000007888 film coating Substances 0.000 claims description 3
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- 238000007711 solidification Methods 0.000 claims description 3
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- 239000003822 epoxy resin Substances 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- URLKBWYHVLBVBO-UHFFFAOYSA-N Para-Xylene Chemical group CC1=CC=C(C)C=C1 URLKBWYHVLBVBO-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000008602 contraction Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002897 polymer film coating Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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Abstract
本发明公开了一种半导体封装方法其及半导体结构,半导体封装方法包括有半导体芯片、支架和连接线,半导体芯片的封装步骤如下:A、固晶;B、打线;C、镀膜;D、加盖。半导体结构包括有半导体芯片、支架和连接线,所述的半导体芯片固定在支架上,连接线的一端与半导体芯片的电极焊接,连接线的另一端与支架焊接,支架上通过UV光固化胶固定有透明碗状外壳,透明碗状外壳倒扣在支架上,透明碗状外壳完全覆盖包裹住半导体芯片及连接线。本发明封装方法简便,封装后的半导体结构的结构简单、透光性好,能够很好的维持半导体结构的性能及寿命。
Description
技术领域
本发明涉及一种半导体领域,尤其涉及了一种半导体封装方法。
本发明还涉及了由半导体封闭方法制得的半导体结构。
背景技术
LED灯的基本结构是一种固态的半导体器件,传统的LED的半导体芯片安装在一个具有正极和负极的支架上,并通过环氧树脂封装起来,但是环氧树脂在热胀冷缩的环境下,会在其内部产生水蒸气并附着在半导体芯片及连接线上,在电流过大时,水蒸气的水分子会产生电迁移及氧化电子材料(如半导体芯片及连接线),从而导致半导体芯片的功能性及可靠性降低,甚至损坏半导体芯片。
发明内容
本发明的目的是为了克服上面所述的技术缺陷,提供一种半导体封装方法,同时也提供了一种半导体结构。
为了解决上面所述的技术问题,本发明采取以下技术方案:
本发明提供了一种半导体封装方法,包括有半导体芯片、支架和连接线,半导体芯片的封装步骤如下:
A、固晶:通过固晶胶将半导体芯片粘贴固定在支架的指定区域,形成热通路或电通路,得到第一半成品;
B、打线:在第一半成品上,将连接线的一端焊接在半导体芯片的电极上,连接线的另一端焊接在支架上,得到第二半成品;
C、镀膜:将第二半成品在真空环境下进行镀膜处理,在连接线外层周边镀上纳米防潮导热材料,形成防潮导热膜,得到第三半成品;
D、加盖:在第三半成品的支架上方通过UV光固化胶加装倒扣的透明碗状外壳,使透明碗状外壳能够完全覆盖包裹住半导体芯片及连接线,并对透明碗状外壳内部空间进行抽真空处理,得到成品。
优选的,所述的步骤A中,固晶进一步包括有步骤:
A1、点胶:将支架上点入固晶胶;
A2、装片:在已点胶的支架上放入半导体芯片;
A3、烘烤:将装片后带有半导体芯片的支架放置于烤箱里烘烤,使半导体芯片通过固晶胶牢固粘贴在支架上。
优选的,步骤D中,对透明碗状外壳内部空间进行除湿和抽真空处理后得到成品。
优选的,纳米防潮导热材料为parylene纳米涂层材料。
优选的,所述的透明碗状外壳为碗状的透明玻璃壳。
优选的,步骤A中,半导体芯片固定在支架的正极或负极。
本发明还提供了一种由上面所述的半导体封装方法制得的半导体结构,包括有半导体芯片、支架和连接线,所述的半导体芯片固定在支架上,连接线的一端与半导体芯片的电极焊接,连接线的另一端与支架焊接,支架上通过UV光固化胶固定有透明碗状外壳,透明碗状外壳倒扣在支架上,透明碗状外壳完全覆盖包裹住半导体芯片及连接线。
优选的,所述的连接线外层周边镀覆有防潮导热膜。
本发明克服了传统的采用环氧树脂进行封装的技术偏见,通过加盖透明碗状外壳且采用碗状的透明玻璃壳,从而避免了由于电流过大而产生的水蒸气,进而影响半导体芯片的功能性及可靠性,延长半导体芯片的使用寿命。
本发明还通过在连接线外层周边镀覆一层防潮导热膜,能够起到良好的导热和防潮效果。
本发明封装方法简便,封装后的半导体结构的结构简单、透光性好,能够很好的维持半导体结构的性能及寿命。
附图说明
图1为本发明的半导体结构的结构示意图。
图中,1.支架、2.固晶胶、3.半导体芯片、4.透明碗状外壳、5.电极、6.连接线、7.UV光固化胶。
具体实施方式
一种半导体封装方法,包括有半导体芯片、支架和连接线,半导体芯片的封装步骤如下:
A、固晶:通过固晶胶将半导体芯片粘贴固定在支架的指定区域,形成热通路或电通路,得到第一半成品;
B、打线:在第一半成品上,将连接线的一端焊接在半导体芯片的电极上,连接线的另一端焊接在支架上,得到第二半成品;
C、镀膜:将第二半成品在真空环境下进行镀膜处理,在连接线外层周边镀上纳米防潮导热材料,形成防潮导热膜,得到第三半成品;
D、加盖:在第三半成品的支架上方通过UV光固化胶加装倒扣的透明碗状外壳,使透明碗状外壳能够完全覆盖包裹住半导体芯片及连接线,并对透明碗状外壳内部空间进行抽真空处理,得到成品。
作为优选实施例,步骤A中,固晶进一步包括有步骤:
A1、点胶:将支架上点入固晶胶;
A2、装片:在已点胶的支架上放入半导体芯片;
A3、烘烤:将装片后带有半导体芯片的支架放置于烤箱里烘烤,使半导体芯片通过固晶胶牢固粘贴在支架上。
作为优选实施例,步骤D中,对透明碗状外壳内部空间进行除湿和抽真空处理后得到成品。
作为优选实施例,纳米防潮导热材料为parylene纳米涂层材料。
parylene是一种新型覆形涂层材料,它是一种对二甲苯的聚合物,根据分子结构不同,parylene可分为n型,c型,d型,f型,ht型等多种类型。parylene用独特的真空气相沉积工艺,由活性小分子在基材表面“生长”出完全覆形的聚合物薄膜涂层,具有其它涂层难以比拟的性能优势,是当代最有效的防潮、防霉、防腐、防盐雾涂层材料。
作为优选实施例,透明碗状外壳为碗状的透明玻璃壳。
作为优选实施例,步骤A中,半导体芯片固定在支架的正极或负极。
请参阅图1,如图所示,一种由上面所述的半导体封装方法制得的半导体结构,包括有半导体芯片3、支架1和连接线6,半导体芯片3通过固晶胶2固定在支架1上,连接线6的一端与半导体芯片3的电极5焊接,连接线6的另一端与支架1焊接,支架1上通过UV光固化胶7固定有透明碗状外壳4,透明碗状外壳4倒扣在支架1,透明碗状外壳4完全覆盖包裹住半导体芯片3及连接线6。
作为优选实施例,连接线6外层周边镀覆有防潮导热膜。
虽然本发明已以较佳实施比例揭示如上,但以上实施比例并非用以限定本发明。任何熟悉本领域的技术人员,在不脱离本发明技术方案范围的情况下,均可利用上述技术内容对本发明技术方案做出多种可能的变动、修饰,或修改为等同变化的等效实施案例。因此,凡是未脱离本发明技术方案的内容,依据本发明技术实质对以上实施比例所作的任何简单修改、等同变化及修饰,均应落在本发明技术方案保护的范围内。
Claims (8)
1.一种半导体封装方法,包括有半导体芯片、支架和连接线,其特征在于:半导体芯片的封装步骤如下:
A、固晶:通过固晶胶将半导体芯片粘贴固定在支架的指定区域,形成热通路或电通路,得到第一半成品;
B、打线:在第一半成品上,将连接线的一端焊接在半导体芯片的电极上,连接线的另一端焊接在支架上,得到第二半成品;
C、镀膜:将第二半成品在真空环境下进行镀膜处理,在连接线外层周边镀上纳米防潮导热材料,形成防潮导热膜,得到第三半成品;
D、加盖:在第三半成品的支架上方通过UV光固化胶加装倒扣的透明碗状外壳,使透明碗状外壳能够完全覆盖包裹住半导体芯片及连接线,并对透明碗状外壳内部空间进行抽真空处理,得到成品。
2.根据权利要求1所述的半导体封装方法,其特征在于:所述的固晶步骤中,进一步包括有步骤:
A1、点胶:将支架上点入固晶胶;
A2、装片:在已点胶的支架上放入半导体芯片;
A3、烘烤:将装片后带有半导体芯片的支架放置于烤箱里烘烤,使半导体芯片通过固晶胶牢固粘贴在支架上。
3.根据权利要求1所述的半导体封装方法,其特征在于:步骤D中,对透明碗状外壳内部空间进行除湿和抽真空处理后得到成品。
4.根据权利要求1所述的半导体封装方法,其特征在于:纳米防潮导热材料为parylene纳米涂层材料。
5.根据权利要求1所述的半导体封装方法,其特征在于:所述的透明碗状外壳为碗状的透明玻璃壳。
6.根据权利要求1所述的半导体封装方法,其特征在于:步骤A中,半导体芯片固定在支架的正极或负极。
7.一种由权利要求1-6任一所述的半导体封装方法制得的半导体结构,包括有半导体芯片、支架和连接线,其特征在于:所述的半导体芯片固定在支架上,连接线的一端与半导体芯片的电极焊接,连接线的另一端与支架焊接,支架上通过UV光固化胶固定有透明碗状外壳,透明碗状外壳倒扣在支架上,透明碗状外壳完全覆盖包裹住半导体芯片及连接线。
8.根据权利要求7所述的半导体结构,其特征在于:所述的连接线外层周边镀覆有防潮导热膜。
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