JP5864126B2 - 発光素子パッケージ - Google Patents

発光素子パッケージ Download PDF

Info

Publication number
JP5864126B2
JP5864126B2 JP2011098371A JP2011098371A JP5864126B2 JP 5864126 B2 JP5864126 B2 JP 5864126B2 JP 2011098371 A JP2011098371 A JP 2011098371A JP 2011098371 A JP2011098371 A JP 2011098371A JP 5864126 B2 JP5864126 B2 JP 5864126B2
Authority
JP
Japan
Prior art keywords
layer
light emitting
emitting device
electrode
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2011098371A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011233899A5 (enExample
JP2011233899A (ja
Inventor
チョ，ブンチュル
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Innotek Co Ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Publication of JP2011233899A publication Critical patent/JP2011233899A/ja
Publication of JP2011233899A5 publication Critical patent/JP2011233899A5/ja
Application granted granted Critical
Publication of JP5864126B2 publication Critical patent/JP5864126B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8585—Means for heat extraction or cooling being an interconnection
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20—Light sources comprising attachment means
    • F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2105/00—Planar light sources
    • F21Y2105/10—Planar light sources comprising a two-dimensional array of point-like light-generating elements
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

Landscapes

  • Led Device Packages (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
  • Electroluminescent Light Sources (AREA)
JP2011098371A 2010-04-28 2011-04-26 発光素子パッケージ Expired - Fee Related JP5864126B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020100039396A KR101028329B1 (ko) 2010-04-28 2010-04-28 발광 소자 패키지 및 그 제조방법
KR10-2010-0039396 2010-04-28

Publications (3)

Publication Number Publication Date
JP2011233899A JP2011233899A (ja) 2011-11-17
JP2011233899A5 JP2011233899A5 (enExample) 2014-06-19
JP5864126B2 true JP5864126B2 (ja) 2016-02-17

Family

ID=44049915

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011098371A Expired - Fee Related JP5864126B2 (ja) 2010-04-28 2011-04-26 発光素子パッケージ

Country Status (6)

Country Link
US (1) US8680552B2 (enExample)
EP (1) EP2383805B1 (enExample)
JP (1) JP5864126B2 (enExample)
KR (1) KR101028329B1 (enExample)
CN (1) CN102237479B (enExample)
TW (1) TWI580083B (enExample)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100880638B1 (ko) * 2007-07-06 2009-01-30 엘지전자 주식회사 발광 소자 패키지
KR100999699B1 (ko) * 2008-09-01 2010-12-08 엘지이노텍 주식회사 발광 소자 패키지
KR101786089B1 (ko) * 2011-04-29 2017-11-15 엘지이노텍 주식회사 자외선 발광 다이오드를 이용한 발광소자 패키지 및 발광 모듈
US20120314419A1 (en) * 2011-06-08 2012-12-13 Wen-Kung Sung Heat dissipation structure of light-emitting diode
US20130032828A1 (en) * 2011-08-02 2013-02-07 Hsu Takeho Led light strip module structure
TW201318221A (zh) * 2011-10-26 2013-05-01 Episil Technologies Inc 發光二極體之矽支架及其製造方法
JP5873108B2 (ja) 2011-12-22 2016-03-01 京セラ株式会社 配線基板および電子装置
TW201338219A (zh) * 2012-03-12 2013-09-16 隆達電子股份有限公司 發光二極體元件
TWI469194B (zh) 2012-05-16 2015-01-11 友達光電股份有限公司 有機電致發光裝置之畫素結構
KR102042465B1 (ko) * 2013-06-13 2019-11-08 엘지이노텍 주식회사 광원모듈 및 이를 구비한 조명 시스템
CN104425694A (zh) * 2013-08-29 2015-03-18 展晶科技(深圳)有限公司 发光二极管封装结构及其制造方法
US9406654B2 (en) * 2014-01-27 2016-08-02 Ledengin, Inc. Package for high-power LED devices
JP6318004B2 (ja) 2014-05-27 2018-04-25 ローム株式会社 Ｌｅｄモジュール、ｌｅｄモジュールの実装構造
TW201614345A (en) * 2014-10-15 2016-04-16 Taiwan Green Point Entpr Co A method for manufacturing a light emitting assembly, the light emitting assembly and a backlight module comprising the light emitting assembly
WO2016086180A1 (en) 2014-11-26 2016-06-02 Ledengin, Inc. Compact emitter for warm dimming and color tunable lamp
JP6424738B2 (ja) 2015-05-26 2018-11-21 日亜化学工業株式会社 発光装置および発光装置の製造方法
CN114725264B (zh) * 2016-11-03 2025-03-25 苏州立琻半导体有限公司 半导体器件和包括该半导体器件的半导体器件封装
US11916096B2 (en) * 2017-02-09 2024-02-27 Vuereal Inc. Circuit and system integration onto a micro-device substrate
US12322732B2 (en) 2017-02-09 2025-06-03 Vuereal Inc. Circuit and system integration onto a microdevice substrate
US11391899B2 (en) 2018-02-07 2022-07-19 Lumentum Operations Llc Thermal interface for riding heatsink
US10575374B2 (en) 2018-03-09 2020-02-25 Ledengin, Inc. Package for flip-chip LEDs with close spacing of LED chips
US11271143B2 (en) 2019-01-29 2022-03-08 Osram Opto Semiconductors Gmbh μ-LED, μ-LED device, display and method for the same
US11538852B2 (en) 2019-04-23 2022-12-27 Osram Opto Semiconductors Gmbh μ-LED, μ-LED device, display and method for the same
JP7604394B2 (ja) 2019-04-23 2024-12-23 エイエムエス－オスラム インターナショナル ゲーエムベーハー Ｌｅｄモジュール、ｌｅｄディスプレイモジュール、および当該モジュールを製造する方法
KR20220060007A (ko) * 2020-11-02 2022-05-11 삼성디스플레이 주식회사 발광 소자 잉크, 표시 장치 및 그 제조 방법
CN116995170B (zh) * 2023-05-24 2024-11-15 佛山大学 一种电极封装结构和发光模组

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04364035A (ja) * 1991-06-11 1992-12-16 Nec Corp 電極配線
JP3895086B2 (ja) * 1999-12-08 2007-03-22 ローム株式会社 チップ型半導体発光装置
JP4897133B2 (ja) * 1999-12-09 2012-03-14 ソニー株式会社 半導体発光素子、その製造方法および配設基板
US6833566B2 (en) * 2001-03-28 2004-12-21 Toyoda Gosei Co., Ltd. Light emitting diode with heat sink
JP2003022983A (ja) * 2001-07-05 2003-01-24 Alps Electric Co Ltd ＩＩーＶＩ族化合物半導体のｎ型電極およびその製造方法、発光ダイオード、半導体レーザ、面発光装置並びに液晶表示装置
US20050073846A1 (en) * 2001-09-27 2005-04-07 Kenji Takine Lightemitting device and method of manufacturing the same
JP4281363B2 (ja) * 2003-01-20 2009-06-17 パナソニック電工株式会社 配線板及び発光装置
EP1605524B1 (en) * 2003-03-18 2010-06-30 Sumitomo Electric Industries, Ltd. Light emitting element mounting member, and semiconductor device using the same
JP3904210B2 (ja) * 2003-04-28 2007-04-11 株式会社リコー 光学電子デバイスの接合方法及び接合構造
WO2005068584A1 (ja) * 2004-01-16 2005-07-28 Mitsubishi Chemical Corporation 蛍光体、及びそれを用いた発光装置、照明装置ならびに画像表示装置
JP4572312B2 (ja) * 2004-02-23 2010-11-04 スタンレー電気株式会社 Ｌｅｄ及びその製造方法
JP4062358B2 (ja) * 2004-09-16 2008-03-19 日立エーアイシー株式会社 Ｌｅｄ装置
US8318519B2 (en) * 2005-01-11 2012-11-27 SemiLEDs Optoelectronics Co., Ltd. Method for handling a semiconductor wafer assembly
JPWO2006090834A1 (ja) * 2005-02-24 2008-07-24 京セラ株式会社 発光装置および照明装置
JP2007027433A (ja) * 2005-07-15 2007-02-01 Mitsubishi Cable Ind Ltd 発光装置
JP4889974B2 (ja) * 2005-08-01 2012-03-07 新光電気工業株式会社 電子部品実装構造体及びその製造方法
TWI302758B (en) * 2006-04-21 2008-11-01 Silicon Base Dev Inc Package base structure of photo diode and manufacturing method of the same
EP1848042A1 (en) * 2006-04-21 2007-10-24 LEXEDIS Lighting GmbH LED package with submount
KR100854328B1 (ko) 2006-07-07 2008-08-28 엘지전자 주식회사 발광 소자 패키지 및 그 제조방법
JP2008053290A (ja) 2006-08-22 2008-03-06 Rohm Co Ltd 光半導体装置およびその製造方法
KR100851183B1 (ko) * 2006-12-27 2008-08-08 엘지이노텍 주식회사 반도체 발광소자 패키지
US7964888B2 (en) * 2007-04-18 2011-06-21 Cree, Inc. Semiconductor light emitting device packages and methods
JP2008294071A (ja) * 2007-05-22 2008-12-04 Toshiba Corp 光半導体装置と、照明装置および表示装置
KR100869530B1 (ko) 2007-06-13 2008-11-19 서울반도체 주식회사 백라이트용 ｌｅｄ 패키지 및 이를 포함하는 백라이트 유닛
KR101283282B1 (ko) * 2007-07-25 2013-07-11 엘지이노텍 주식회사 발광 소자 패키지 및 그 제조방법
KR100877881B1 (ko) * 2007-09-06 2009-01-08 엘지이노텍 주식회사 발광다이오드 패키지 및 그 제조방법
KR20090005228U (ko) * 2007-11-27 2009-06-01 엘지이노텍 주식회사 발광 다이오드 패키지
JP2009206187A (ja) * 2008-02-26 2009-09-10 Panasonic Electric Works Co Ltd 発光装置およびその製造方法
KR100992778B1 (ko) * 2008-05-23 2010-11-05 엘지이노텍 주식회사 발광소자 패키지 및 그 제조방법
KR100972982B1 (ko) * 2008-10-08 2010-08-03 삼성엘이디 주식회사 Ｌｅｄ 패키지용 리드프레임
JP2009260395A (ja) * 2009-08-07 2009-11-05 Hitachi Aic Inc 配線基板及びその製造方法
KR101091304B1 (ko) * 2010-01-20 2011-12-07 엘지이노텍 주식회사 발광 소자 패키지 및 그 제조방법

Also Published As

Publication number Publication date
TW201203637A (en) 2012-01-16
EP2383805B1 (en) 2016-02-17
US8680552B2 (en) 2014-03-25
CN102237479B (zh) 2014-09-24
TWI580083B (zh) 2017-04-21
KR101028329B1 (ko) 2011-04-12
US20110198653A1 (en) 2011-08-18
EP2383805A2 (en) 2011-11-02
EP2383805A3 (en) 2012-07-04
CN102237479A (zh) 2011-11-09
JP2011233899A (ja) 2011-11-17

Similar Documents

Publication Publication Date Title
JP5864126B2 (ja) 発光素子パッケージ
JP5864514B2 (ja) 発光素子
JP4325412B2 (ja) 発光装置及び発光装置の製造方法
CN102214648B (zh) 发光器件封装和照明系统
EP2362455B1 (en) Light emitting device
KR101916131B1 (ko) 발광 소자, 발광 소자 제조방법 및 조명 시스템
KR20130014256A (ko) 발광 소자 패키지 및 이를 이용한 조명 시스템
TWI440230B (zh) 發光器具
KR20120136814A (ko) 발광 소자 패키지
KR101976436B1 (ko) 기판, 발광 모듈 및 조명 시스템
KR101836368B1 (ko) 발광 소자, 발광 소자 제조방법 및 조명 시스템
KR20120006257A (ko) 전극, 발광 소자, 발광 소자 패키지, 및 조명 시스템
KR20130088556A (ko) 발광소자 및 발광 소자 패키지
EP2860773B1 (en) Light-emitting device, and light-emitting device package
KR101830950B1 (ko) 발광소자
KR101734549B1 (ko) 발광 소자
KR20110139445A (ko) 발광 소자, 발광 소자 제조방법, 발광 소자 패키지 및 조명 시스템
KR101865932B1 (ko) 발광소자 패키지 및 조명 장치
KR101896683B1 (ko) 발광 모듈 및 이를 구비한 조명 시스템
KR101896676B1 (ko) 발광소자 및 발광 소자 패키지
KR20130060638A (ko) 발광 소자, 이를 포함하는 발광 소자 패키지, 및 이를 포함하는 조명 시스템

Legal Events

Date Code Title Description
RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20130802

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140422

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20140422

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150224

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20150225

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150522

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150714

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20151006

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20151215

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20151224

R150 Certificate of patent or registration of utility model

Ref document number: 5864126

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees