JP5863050B2 - ガスシャワーヘッド、その製造方法及び薄膜成長反応装置 - Google Patents
ガスシャワーヘッド、その製造方法及び薄膜成長反応装置 Download PDFInfo
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- 238000006243 chemical reaction Methods 0.000 title claims description 62
- 239000010409 thin film Substances 0.000 title claims description 11
- 238000004519 manufacturing process Methods 0.000 title description 20
- 239000007789 gas Substances 0.000 claims description 525
- 238000009792 diffusion process Methods 0.000 claims description 207
- 238000009826 distribution Methods 0.000 claims description 103
- 239000012495 reaction gas Substances 0.000 claims description 89
- 238000001816 cooling Methods 0.000 claims description 84
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 73
- 239000000110 cooling liquid Substances 0.000 claims description 32
- 238000004891 communication Methods 0.000 claims description 8
- 238000013459 approach Methods 0.000 claims description 6
- 239000007787 solid Substances 0.000 description 16
- 238000000034 method Methods 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 238000005553 drilling Methods 0.000 description 6
- 238000007689 inspection Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000000376 reactant Substances 0.000 description 3
- 238000000927 vapour-phase epitaxy Methods 0.000 description 3
- 230000003139 buffering effect Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
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- Manufacturing & Machinery (AREA)
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Description
2 第2のガス拡散流路
6 ワークピース
7 支持部
8 反応チャンバー
10 第1の反応ガス領域
20 第2の反応ガス領域
30 ガス流路
100 ガス分配拡散板
101 ガス導管、ドリル穴
102 第1のガス放出流路、第1のガス放出溝
110 上部平板
110a 上部平板の上面
110b 上部平板の下面
112 穴
120 下部平板
120a 下部平板の上面
120b 下部平板の下面
122 ガス放出溝
130 第1の分配領域
140 断面
150 接触領域の溶接点
200 水冷板
201 ガス導管、ドリル穴
202 第2のガス放出流路、第2のガス放出溝
211 上部導管開口
212 穴
222 ガス放出溝
230 第2の分配領域
240 ガス放出溝の断面
250 突出部
250a 突出部の上面
300 冷却液体流路
312 貫通孔
322 ガス放出流路
340 固体構成要素
400 ガス緩衝開口
401 穴
412 貫通孔
422 ガス放出流路
500 反応領域
501 穴
512 第1のグループの穴
513 第2のグループの穴
1220 第1のガス放出流路
1222 第2のガス放出流路
Claims (14)
- 第1の反応ガス源に接続する第1のガス拡散流路の複数の列及び第2の反応ガス源に接続する第2のガス拡散流路の複数の列を含み、前記第1のガス拡散流路の複数の列及び前記第2のガス拡散流路の複数の列が交互に配置され、前記第1のガス拡散流路のそれぞれの列及び前記第2のガス拡散流路のそれぞれの列が共に複数の離隔されたガス拡散経路を含む、ガス分配拡散板;及び
前記ガス分配拡散板の下部に位置し、ある厚さを有する平板であり、上面及び加工されるワークピースに近接する下面を含む水冷板であって、前記水冷板が冷却液体流路の複数の列、前記第1のガス拡散流路内に反応ガスを流出させるように提供された複数の第1のガス放出流路、及び前記第2のガス拡散流路内に反応ガスを流出させるように提供された複数の第2のガス放出流路を含み、複数の前記第1のガス放出流路及び複数の前記第2のガス放出流路が前記水冷板の上面及び下面を貫通して延設し、前記第1のガス放出流路及び前記第2のガス放出流路のそれぞれが、前記水冷板の前記下面における溝であり、前記溝の、加工される前記ワークピースに近い方の一端部における断面積が、加工される前記ワークピースに近づくにつれて次第に増大する、水冷板;
を含む、反応チャンバー内に少なくとも第1の反応ガス及び第2の反応ガスを個別に供給するためのガスシャワーヘッドであって、
前記ガス分配拡散板及び前記水冷板が、2つの分離された構成要素であり、取り外し可能に機械的に一体として組み立てられており、前記第1の反応ガス及び前記第2の反応ガスが、前記ガスシャワーヘッドから放出され前記反応チャンバーに入る前は互いに分離され、
複数のガス緩衝開口部が、前記水冷板上に選択的に配置され、
前記複数のガス緩衝開口部が、前記複数の第1のガス放出流路の少なくとも一部に対応するように、または前記複数の第2のガス放出流路の少なくとも一部に対応するように連通される、ガスシャワーヘッド。 - 前記ガス分配拡散板が、上部平板及び下部平板を含み、
前記第1のガス拡散流路が、前記上部平板及び前記下部平板を貫通して延設する第1の導管の複数の列であり、
前記第2のガス拡散流路が、前記下部平板を貫通して延設する第2の導管の複数の列であり、
前記第2の導管の上部導管開口部が、前記上部平板の下面よりも低く、
前記第1の導管の上部導管開口部が、前記上部平板の上面よりも高いかまたは同一平面である、請求項1に記載のガスシャワーヘッド。 - 前記ガス分配拡散板が、上部平板及び下部平板を含み、
前記第1のガス拡散流路が、前記上部平板及び前記下部平板を貫通して延設する導管の複数の列であり、前記第2のガス拡散流路が、前記下部平板を貫通して延設する穴の複数の列である、請求項1に記載のガスシャワーヘッド。 - 前記ガス分配拡散板が、上部平板及び下部平板を含み、
前記第1のガス拡散流路が、前記上部平板及び前記下部平板を貫通して延設する導管の複数の列であり、
突出部の複数の列が、前記下部平板上に均一に配置され、
前記突出部の上面が、前記下部平板の上面よりも高く、
前記第2のガス拡散流路が、前記突出部及び前記下部平板を貫通して延設する穴の複数の列である、請求項1に記載のガスシャワーヘッド。 - 前記ガス分配拡散流路が、ある厚さを有する平板であり、
前記ガス拡散流路が、前記平板の上面及び下面を貫通して延設する複数の離隔された第1のドリル穴であり、前記平板の前記上面及び前記下面に対してほぼ平行なガス流路の複数の列が、前記平板内に配置され、前記第2のガス拡散流路が、前記ガス流路から前記平板の下面を貫通して延設する複数の離隔された第2のドリル穴である、請求項1に記載のガスシャワーヘッド。 - 前記第1のガス放出流路及び前記第2のガス放出流路のそれぞれが、前記水冷板の上面及び下面を貫通して延設する長い溝であり、
前記冷却液体流路が、前記第1のガス放出流路と前記第2のガス放出流路との間にある、請求項1から5のいずれか一項に記載のガスシャワーヘッド。 - 前記第1のガス放出流路及び前記第2のガス放出流路が、それぞれある深さを有し前記水冷板の上面を貫通して延設する穴及び前記下面を貫通して延設し前記穴と連通する長い溝を含み、
前記冷却液体流路が、前記第1のガス放出流路と前記第2のガス放出流路との間にある、請求項1から5のいずれか一項に記載のガスシャワーヘッド。 - 前記第1のガス放出流路が、前記水冷板の下面において第1のループ構造を構成し、それらのそれぞれが相互連通し、
前記第2のガス放出流路が、前記水冷板の下面において第2のループ構造を構成し、それらのそれぞれが相互連通し、
前記第1のループ構造及び前記第2のループ構造が交互に配置され、または互いの内側に入れ子構造に配置される、請求項1に記載のガスシャワーヘッド。 - 前記第1のループ構造及び前記第2のループ構造が共に、正多角形構造または円形構造からなる、請求項8に記載のガスシャワーヘッド。
- 前記水冷板が、前記水冷板の上面からある深さだけ下方に延設する穴の複数の列をさらに含み、
前記複数の穴が、前記第1のループ構造及び前記第2のループ構造に対応するように連通される、請求項8または9に記載のガスシャワーヘッド。 - 前記ガス緩衝開口部が、段差形状、スロープ形状又は円弧形状からなる、請求項1に記載のガスシャワーヘッド。
- 前記複数の離隔されたガス拡散経路が、複数の導管または穴を含み、
前記複数の離隔されたガス拡散経路が、前記ガス分配拡散板上に均一にまたは不均一であるが一定間隔で分布される、請求項1に記載のガスシャワーヘッド。 - 前記ガス分配拡散板が、第1の分配領域及び第2の分配領域を含み、
前記第1の分配領域が、反応ガス源のガス流入口に近接し、
前記第2の分配領域と前記反応ガス源の前記ガス流入口との間の距離が、前記第1の分配領域と前記反応ガス源の前記ガス流入口との間の距離よりも大きく、
前記第1の分配領域における前記第1のガス拡散流路の内径が、対応する前記第2のガス分配領域における前記第1のガス拡散流路の内径よりも小さく、
前記第1の拡散領域における前記第2のガス拡散流路の内径が、対応する前記第2の分配領域における前記第2のガス拡散流路の内径よりも小さい、請求項1に記載のガスシャワーヘッド。 - 反応チャンバー、及び支持部を含み、
前記支持部上に提供された加工されるワークピースが、前記反応チャンバー内に提供され、
前記支持部が、ほぼ水平方向に回転可能であり、
請求項1から5、8、9及び11から13のいずれか一項に記載のガスシャワーヘッドを含む、薄膜成長反応装置。
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KR20130126477A (ko) | 2013-11-20 |
CN105274498A (zh) | 2016-01-27 |
CN103388132A (zh) | 2013-11-13 |
US9534724B2 (en) | 2017-01-03 |
US20130299009A1 (en) | 2013-11-14 |
CN103388132B (zh) | 2015-11-25 |
TWI484064B (ja) | 2015-05-11 |
KR101523633B1 (ko) | 2015-05-28 |
CN105274498B (zh) | 2017-10-27 |
JP2013239707A (ja) | 2013-11-28 |
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