CN107429396B - 用于使基底表面经受连续表面反应的装置 - Google Patents
用于使基底表面经受连续表面反应的装置 Download PDFInfo
- Publication number
- CN107429396B CN107429396B CN201680011789.8A CN201680011789A CN107429396B CN 107429396 B CN107429396 B CN 107429396B CN 201680011789 A CN201680011789 A CN 201680011789A CN 107429396 B CN107429396 B CN 107429396B
- Authority
- CN
- China
- Prior art keywords
- substrate
- presoma
- gas distributor
- gas
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (11)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI20155125 | 2015-02-25 | ||
FI20155125 | 2015-02-25 | ||
PCT/FI2016/050095 WO2016135377A1 (en) | 2015-02-25 | 2016-02-16 | Apparatus for subjecting a surface of a substrate to successive surface reactions |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107429396A CN107429396A (zh) | 2017-12-01 |
CN107429396B true CN107429396B (zh) | 2019-06-14 |
Family
ID=56787951
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201680011789.8A Active CN107429396B (zh) | 2015-02-25 | 2016-02-16 | 用于使基底表面经受连续表面反应的装置 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN107429396B (zh) |
WO (1) | WO2016135377A1 (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102020103946A1 (de) | 2020-02-14 | 2021-08-19 | AIXTRON Ltd. | Gaseinlasseinrichtung für einen CVD-Reaktor |
DE102020103947A1 (de) | 2020-02-14 | 2021-08-19 | AIXTRON Ltd. | CVD-Reaktor und Verfahren zum Handhaben einer Prozesskammer-Deckenplatte |
FI129868B (en) * | 2021-03-30 | 2022-10-14 | Beneq Oy | Gas supply cup and gas manifold assembly |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7270713B2 (en) * | 2003-01-07 | 2007-09-18 | Applied Materials, Inc. | Tunable gas distribution plate assembly |
GB0510051D0 (en) * | 2005-05-17 | 2005-06-22 | Forticrete Ltd | Interlocking roof tiles |
KR20110093476A (ko) * | 2010-02-12 | 2011-08-18 | 삼성엘이디 주식회사 | 기상 증착 시스템, 발광소자 제조방법 및 발광소자 |
EP2481832A1 (en) * | 2011-01-31 | 2012-08-01 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Apparatus for atomic layer deposition |
CN103388132B (zh) * | 2012-05-11 | 2015-11-25 | 中微半导体设备(上海)有限公司 | 气体喷淋头、其制造方法及薄膜生长反应器 |
DE102012110125A1 (de) * | 2012-10-24 | 2014-04-24 | Aixtron Se | Vorrichtung zum Behandeln von Substraten mit einer auswechselbaren Deckenplatte sowie Verfahren zum Auswechseln einer derartigen Deckenplatte |
KR102017744B1 (ko) * | 2012-12-12 | 2019-10-15 | 삼성디스플레이 주식회사 | 증착 장치, 이를 이용한 박막 형성 방법 및 유기 발광 표시 장치 제조 방법 |
-
2016
- 2016-02-16 WO PCT/FI2016/050095 patent/WO2016135377A1/en active Application Filing
- 2016-02-16 CN CN201680011789.8A patent/CN107429396B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
WO2016135377A1 (en) | 2016-09-01 |
CN107429396A (zh) | 2017-12-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10190214B2 (en) | Deposition apparatus and deposition system having the same | |
JP6432507B2 (ja) | 成膜装置 | |
CN107429396B (zh) | 用于使基底表面经受连续表面反应的装置 | |
US10745806B2 (en) | Showerhead with air-gapped plenums and overhead isolation gas distributor | |
US20070028838A1 (en) | Gas manifold valve cluster | |
CN109075024A (zh) | 微体积沉积腔室 | |
US20170159179A1 (en) | Nozzle Head, Apparatus and Method for Subjecting Surface of Substrate to Successive Surface Reactions | |
US20130220222A1 (en) | Gas Distribution Apparatus with Heat Exchanging Channels | |
CN108495950A (zh) | 用于原子层沉积的装置 | |
JP6997727B2 (ja) | コーティング装置およびコーティング方法 | |
KR101321331B1 (ko) | 태양전지용 박막 증착 시스템 | |
KR101619308B1 (ko) | 원자층 증착 시스템 | |
KR101573689B1 (ko) | 원자층 증착장치 | |
KR101661097B1 (ko) | 고생산성 박막증착이 가능한 원자층 증착장치 | |
KR20190023560A (ko) | 기판처리장치 및 그 세정방법 | |
KR20140140462A (ko) | 원자층 증착 장치 | |
KR101430657B1 (ko) | 원자층 증착장치 | |
KR101926985B1 (ko) | 고밀도 박막증착을 위한 증착장치 | |
KR20130085962A (ko) | 가스 공급 헤드 및 기판 처리 장치 | |
US20230141281A1 (en) | Substrate processing device and method | |
RU100518U1 (ru) | Установка для нанесения тонких пленок поверхностных диффузантов на кремниевые пластины | |
TW201740499A (zh) | 基板支架以及使用該基板支架之基板處理設備 | |
KR20180017676A (ko) | 박막증착장치 | |
TW202313207A (zh) | 基板處理裝置 | |
KR102556024B1 (ko) | 기판 홀더 및 이를 구비한 증착 장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Espoo, Finland Patentee after: BENEQ Group Ltd. Address before: Espoo, Finland Patentee before: BENEQ OY |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20220826 Address after: Espoo, Finland Patentee after: BENEQ OY Address before: Espoo, Finland Patentee before: BENEQ Group Ltd. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20230516 Address after: Room 205-5-7, 2nd Floor, East Office Building, No. 45 Beijing Road, Qianwan Bonded Port Area, Qingdao, Shandong Province, China (Shandong) Pilot Free Trade Zone (A) Patentee after: QINGDAO SIFANG SRI INTELLIGENT TECHNOLOGY Co.,Ltd. Address before: Espoo, Finland Patentee before: BENEQ OY |