CN108495950A - 用于原子层沉积的装置 - Google Patents
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- 238000000231 atomic layer deposition Methods 0.000 title claims abstract description 19
- 238000006243 chemical reaction Methods 0.000 claims abstract description 94
- 239000002243 precursor Substances 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 239000007789 gas Substances 0.000 claims abstract description 7
- 239000011521 glass Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000006557 surface reaction Methods 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
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- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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Abstract
本发明涉及一种用于根据原子层沉积原理使基底的表面经历至少第一前体和第二前体的表面反应的装置。所述装置包括反应腔室(1),所述反应腔室形成反应空间(2)以用于接收在所述基底的所述表面上反应的前体气体。所述装置还包括基底支撑件(3),所述基底支撑件用于固持所述基底;介电板(4);以及电极(7),所述电极耦合到电压源(8)以在所述电极(7)上感应出电压,从而向所述反应空间(2)产生放电。所述介电板(4)布置在所述基底支撑件(3)与所述电极(7)之间,并且使得所述反应空间(2)布置在所述基底支撑件(3)与所述介电板(4)之间。
Description
发明领域
本发明涉及一种用于根据原子层沉积原理使基底的表面经历至少第一前体和第二前体的表面反应的装置,并且更具体地涉及如独立权利要求1的前序部分中所定义的装置。
发明背景
原子层沉积(ALD)按照惯例是在处于真空条件下的反应腔室中进行。首先将一个或多个基底装载到反应腔室中,然后将反应腔室抽真空并将反应腔室内的反应空间加热到处理温度。然后通过将至少第一气体前体和第二气体前体交替并重复地供应到反应腔室中来进行原子层沉积,以便在基底的表面上提供具有所需厚度的涂层。将第一前体和第二前体供应到反应腔室中的一个完整ALD循环包括:将第一前体的脉冲流供应到反应腔室中,从反应腔室中吹扫掉第一前体,将第二前体的脉冲流供应到反应腔室中并从反应腔室中吹扫掉第二前体。吹扫前体可包括从反应腔室中排出前体材料,将吹扫气体如氮气供应到反应腔室中并排出吹扫气体。当达到所要的ALD循环次数并由此达到所要的涂层厚度时,将反应腔室中的真空排空并且将基底从反应腔室中卸载下来。然后对接下来的基底重复相同的过程。
可以通过将等离子体施加到沉积循环中来修改ALD涂覆,这称为等离子体增强的ALD。等离子体可电容性地耦合以使得两个电极被放置成彼此相距很小的距离,其中一个电极连接至RF电源而另一个电极接地。RF电源耦合到处理室中的电极以产生离子和/或自由基和反应性原子。等离子体也可电感性地耦合或通过ECR耦合。
在ALD过程中通常会出现的一个问题是,在ALD处理过程中在用前体涂覆基底表面的同时,反应腔室的其他表面也被涂覆。为了在处理中保持良好的质量,必须间隔地清洁反应腔室的表面。当ALD装置是群集工具的一部分时,装置的清洁就成为一个非常重要的问题,因为它也会影响连接至群集的其他处理工具。一般打开反应腔室,就可以清洁表面,或者可将部件拆去并在反应腔室外面进行清洁,但是为此同时将真空排出并且在可开始下一次ALD处理之前必须抽真空。抽真空和排气以及加热反应空间需要花费大量时间,并且在此期间无法操作处理模块,而且连接至群集的其他处理工具也无法使用,或仅可以在有限的操作中使用。
群集工具意味着存在有多个彼此连接的处理工具,使得基底可以在彼此靠近地定位的不同真空腔室之间移动。群集工具通常与群集工具机器人一起操作。等离子体-ALD装置中的问题也与上述污染有关,并且涂覆过程应该能够继续,而不因装置清洁相关事宜而中断,这起因于涂覆过程应该是有效的这一需求。
发明简述
本发明的目的是提供一种装置以减轻上述缺点。本发明的目的通过以独立权利要求中陈述的内容为特征的装置来实现。本发明的优选实施方案在从属权利要求中公开。
根据本发明的装置是用于根据原子层沉积的原理使基底的表面经历至少第一前体和第二前体的表面反应。该装置包括反应腔室,所述反应腔室形成反应空间以用于接收在基底表面上反应的前体气体。该装置还包括基底支撑件,所述基底支撑件用于固持基底;介电板;以及电极,所述电极耦合到电压源以在电极上感应出电压,从而向反应空间产生放电。介电板布置在基底支撑件与电极之间,这样使得反应空间布置在基底支撑件与介电板之间。
反应腔室由彼此连接的表面形成,使得存在底表面、顶表面和在顶表面与底表面之间的至少一个侧表面,并且介电板形成构成反应腔室的其中一个表面的至少一部分。
在本发明的优选实施方案中,反应腔室由至少部分由介电板(如玻璃、石英或玻璃陶瓷)制成的顶表面和作为基底支撑件的底表面形成。基底支撑件优选地可在竖直方向上移动,使得基底支撑件关闭反应腔室并且使得反应腔室可从底侧装载。在本发明的优选实施方案中,该至少一个侧表面是围绕反应空间且连接至顶表面和底表面的侧壁。顶表面和/或底表面之间的连接可在例如以下情况下打开:底表面可在竖直方向上移动;侧表面可与底表面一起移动;以及当底表面移动时,顶表面可维持其位置或侧表面可保持在其位置上。在本发明的另一个实施方案中,底表面、侧表面和顶表面都可在竖直方向上单独移动或一起移动或以组合方式移动。在本发明的一个实施方案中,顶表面和侧表面被制成为一体,而底表面(其为基座板)经过移动来打开和关闭腔室。
在本发明的另一个实施方案中,反应腔室形成为使得顶表面是基底支撑件并且底表面至少部分地由介电板形成。在这种情况下,顶表面优选地可在竖直方向上移动或者可以某种其他方式打开,使得基底可被装载到基底支撑件上并从基底支撑件卸载。
换句话说,反应腔室至少部分地在反应腔室的一侧由介电板限定。介电板使得,当RF电源耦合到布置在介电板一侧上的电极时,在介电板的另一侧上产生电子和反应原子,从而与供应到反应空间中的前体一起产生等离子体。基底支撑件用作接地的另一个电极。介电板优选地由玻璃或陶瓷或者玻璃和陶瓷的组合制成。
根据本发明的装置的优点是涂覆过程中的残留物留在反应腔室中并且装置本身保持洁净。另一个优点是当电极布置在反应空间外部时,可以利用机器人将RF信号耦合到电极。如果没有介电板,电极表面会留下残留物,将其从装置中移除会很困难。介电板充当牺牲保护器,同时也是绝缘体,但仍然传输RF信号。这样电极可以正常操作并仍然受到保护。可以很容易地将介电板移除并清洁,然后再放回或更换一个新的。
附图简述
下面将参考附图借助于优选实施方案更详细地描述本发明,其中:
图1示出处于处理位置的根据本发明的装置的一个实施方案;
图2示出处于装载位置的根据本发明的装置的一个实施方案;
图3示出处于处理位置的根据本发明的装置的另一个实施方案;并且
图4示出处于装载位置的图3所示装置的实施方案。
发明详述
图1示出本发明的一个实施方案,其中反应腔室1关闭,即处于处理位置。反应腔室1形成反应空间2的轮廓,在此处根据原子层沉积原理使基底10经历至少第一前体和第二前体的表面反应。在本发明的此实施方案中,反应腔室1包括基底支撑件3,其作为反应腔室1的底表面1a;以及介电板4,其作为反应腔室1的顶表面1b。虽然该图显示介电板4形成反应腔室1的整个顶表面1b,但介电板可选地可仅形成顶表面1b的一部分。电极7布置成与介电板4处于操作性连接,以便通过介电板4向反应空间2产生放电,从而与供应到反应空间2的前体一起产生等离子体。在本发明的此实施方案中,前体从反应腔室1的一个侧表面1c供入并从相对的侧表面1c排出。该装置包括至少一个前体进给通道5,其用于向反应空间2供应前体;以及至少一个排出通道6,其用于从反应空间2排出前体。如图1所示,进给通道5和排出通道6可被布置成使得通道5、6的输出面位于反应腔室1的侧表面1c上。在本发明的另一个实施方案中,前体进给通道5和排出通道6可被布置来延伸,使得前体进给通道5的输出面布置在反应腔室1的顶表面1b上,并且排出通道的输出面可布置在反应腔室1的两个侧表面或反应腔室1的另一侧表面上,或者使得前体从反应腔室1的侧表面排出并且进一步泵送到反应腔室1外部的底表面1a下面。电极7被布置在反应腔室1的外部并且耦合到电压源8以在电极7上感应出电压,以便向反应空间2产生放电从而与前体一起产生等离子体。电压源8可被布置成更远离电极7或者其可以靠近电极7。由于电极7布置在反应腔室1的外部,所以电极匹配件也布置在反应腔室1的外部。换句话说,反应腔室1由底表面1a、顶表面1b和至少一个侧表面1c形成,从而形成反应空间2,基底10的表面反应被安排在这里发生。电极7布置在反应空间2的外部,这样使得在电极7与反应空间2之间存在介电板4。电极7耦合到电压源,优选为RF发生器。
基底支撑件3优选地包括可移动基座,其具有用于支撑基底的支撑部分3a和用于使基底在处理位置与装载位置之间移动的底座部分3b。底座部分3b的移动优选是竖直的。换句话说,可移动基底支撑件3来卸载经处理的基底并重新装载新的基底。
图2示出处于打开状态,即处于装载位置的反应腔室1。在此图中,当底座部分3b已与支撑部分3b一起移动,使得反应腔室1打开并且留出空间将基底10装载到基底支撑件3时,待处理的基底10将被装载到基底支撑件3。介电板4形成反应腔室1的顶表面1b的至少一部分。介电板4可被布置为该装置的固定部分或者可选地布置为装置的可移除部分。当布置为可移除部分时,介电板4被布置成使得它可仅通过例如松开介电板4与介电板4周围结构之间的连接的方式从装置中取出以用于清洁目的或其他维护目的,然后再次放回,而无需拆开整个装置或装置的大部分。
在装置的另一个实施方案中,介电板4借助于可移动支撑件压靠在围绕介电板的结构上,并且介电板4可与可移动支撑件一起移动以从装置移除。在本发明的此实施方案中,介电板4形成反应腔室1的顶表面1b的至少一部分。或者介电板4可以布置到反应腔室1的底表面1a,在这种情况下反应腔室优选从底表面1a以外的其他地方打开,例如从顶表面1b打开。介电板4优选由玻璃制成,但其可由其他介电材料如塑料制成。
在本发明的一个实施方案中,基底支撑件3可在竖直方向上移动,以使基底1在其中反应腔室1处于关闭状态的处理位置与其中反应腔室1处于打开状态的装载位置之间移动,在此实施方案中介电板4也被制成为可移动部分。介电板4可以与基底支撑件一起在处理位置与装载位置之间移动,或者它可以具有自己的支撑结构,该支撑结构是可移动的;或者如果在涂覆处理中使用掩模框架并且其具有自己的可移动掩模对准支撑件,那么介电板4可以与掩模对准支撑件一起移动。
图3示出本发明的一个实施方案,其中装置包括用于沿竖直方向移动介电板4的升降器11,以便将所述介电板4从该装置移除以待清洁或更换。换句话说,介电板4可移除地布置在装置上,使得它可以在不拆开整个装置的情况下从装置中移除。图3示出处于处理位置的装置,其中反应腔室2关闭,以便基底10可以被处理。在此实施方案中,进给通道5和排出通道6被布置成使得通道5、6的输出面位于反应腔室1的侧表面1c上,并且介电板4形成反应腔室1的顶表面1b。反应腔室1的底表面1a由基底支撑件3形成,该基底支撑件包括用于支撑基底的支撑部分3a和用于使基底在处理位置与装载位置之间移动的底座部分3b。进给通道5和排出通道6的输出面被布置成使得它们可以与介电板4一起在竖直方向上移动。介电板4的移动是利用支撑通道5、6的输出面部分的升降器11来实现的。
图4示出处于装载位置的图3所示装置,其中底座3b已将基底支撑件3a中的基底10向下移动,并且升降器11已将通道5、6的一部分和介电板4向下移动,使得介电板4可以从装置中移除。这只是如何从装置中移除介电板4的一个例子。
对于本领域技术人员而言显而易见的是,随着技术的进步,本发明的构思可以各种方式实施。本发明及其实施方案不限于上述实例,而是可以在权利要求的范围内变化。
Claims (8)
1.一种用于根据原子层沉积原理使基底的表面经历至少第一前体和第二前体的表面反应的装置,所述装置包括:
-反应腔室(1),所述反应腔室形成反应空间(2)以用于接收在所述基底的所述表面上反应的前体气体,
-基底支撑件(3),所述基底支撑件用于固持所述基底,
-介电板(4),以及
-电极(7),所述电极耦合到电压源(8)以在所述电极(7)上感应出电压,从而向所述反应空间(2)产生放电,
-所述介电板(4)布置在所述基底支撑件(3)与所述电极(7)之间,使得所述反应空间(2)布置在所述基底支撑件(3)与所述介电板(4)之间,所述基底支撑件(3)能在竖直方向上移动,以使所述基底(1)在所述反应腔室(1)处于关闭状态的处理位置与所述反应腔室(1)处于打开状态的装载位置之间移动,所述装置的特征在于:所述介电板(4)能与所述基底支撑件(3)一起在所述处理位置与所述装载位置之间移动。
2.根据权利要求1所述的装置,其中所述反应腔室(1)由彼此连接的表面形成,使得存在有底表面(1a)、顶表面(1b)和至少一个侧表面(1c),并且所述介电板(4)形成构成所述反应腔室(1)的所述表面(1a、1b、1c)之一的至少一部分。
3.根据权利要求2所述的装置,其中所述介电板(4)形成所述反应腔室(1)的所述顶表面(1b)的至少一部分。
4.根据前述权利要求中任一项所述的装置,其中所述电极(7)布置成与所述介电板(4)操作性连接,以便通过所述介电板(4)向所述反应空间(2)产生放电,从而与供应到所述反应空间(2)中的前体一起产生等离子体。
5.根据前述权利要求中任一项所述的装置,其中所述介电板(4)由玻璃制成。
6.根据前述权利要求中任一项所述的装置,其中所述电极(7)布置在所述反应腔室(1)的外部。
7.根据前述权利要求中任一项所述的装置,其中所述装置还包括用于向所述反应空间(2)供应前体的至少一个前体进给通道(5)和用于从所述反应空间(2)排出前体的至少一个排出通道(6)。
8.根据权利要求7所述的装置,其中所述至少一个前体进给通道(5)和所述至少一个排出通道(6)设置到所述侧表面(1c)上。
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CN112771201A (zh) * | 2018-10-02 | 2021-05-07 | 瑞士艾发科技 | 等离子体增强原子层沉积(peald)设备 |
CN114107947A (zh) * | 2020-08-28 | 2022-03-01 | 昆山微电子技术研究院 | 原子层沉积设备 |
CN114107948A (zh) * | 2020-08-28 | 2022-03-01 | 昆山微电子技术研究院 | 一种原子层沉积设备 |
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WO2008028082A2 (en) * | 2006-08-30 | 2008-03-06 | Applied Materials, Inc. | Precursors and hardware for cvd and ald |
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CN114107948A (zh) * | 2020-08-28 | 2022-03-01 | 昆山微电子技术研究院 | 一种原子层沉积设备 |
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