JP5853486B2 - 撮像装置および撮像表示システム - Google Patents

撮像装置および撮像表示システム Download PDF

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Publication number
JP5853486B2
JP5853486B2 JP2011178682A JP2011178682A JP5853486B2 JP 5853486 B2 JP5853486 B2 JP 5853486B2 JP 2011178682 A JP2011178682 A JP 2011178682A JP 2011178682 A JP2011178682 A JP 2011178682A JP 5853486 B2 JP5853486 B2 JP 5853486B2
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Japan
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reset
line
period
sequential
drive
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JP2011178682A
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English (en)
Japanese (ja)
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JP2013042403A5 (enExample
JP2013042403A (ja
Inventor
千田　みちる
みちる 千田
信二 藤本
信二 藤本
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Sony Corp
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Sony Corp
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Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2011178682A priority Critical patent/JP5853486B2/ja
Priority to KR1020120086099A priority patent/KR101966991B1/ko
Priority to EP12179817.7A priority patent/EP2560373B1/en
Priority to US13/571,620 priority patent/US8901504B2/en
Priority to CN201210285271.7A priority patent/CN102957881B/zh
Publication of JP2013042403A publication Critical patent/JP2013042403A/ja
Publication of JP2013042403A5 publication Critical patent/JP2013042403A5/ja
Application granted granted Critical
Publication of JP5853486B2 publication Critical patent/JP5853486B2/ja
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/626—Reduction of noise due to residual charges remaining after image readout, e.g. to remove ghost images or afterimages
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/30—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming X-rays into image signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/767—Horizontal readout lines, multiplexers or registers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/7795—Circuitry for generating timing or clock signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2011178682A 2011-08-18 2011-08-18 撮像装置および撮像表示システム Expired - Fee Related JP5853486B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2011178682A JP5853486B2 (ja) 2011-08-18 2011-08-18 撮像装置および撮像表示システム
KR1020120086099A KR101966991B1 (ko) 2011-08-18 2012-08-07 촬상 장치 및 촬상 표시 시스템
EP12179817.7A EP2560373B1 (en) 2011-08-18 2012-08-09 Image pickup unit and image-pickup and display system
US13/571,620 US8901504B2 (en) 2011-08-18 2012-08-10 Image pickup unit and image-pickup and display system
CN201210285271.7A CN102957881B (zh) 2011-08-18 2012-08-10 图像拾取单元以及图像拾取和显示系统

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011178682A JP5853486B2 (ja) 2011-08-18 2011-08-18 撮像装置および撮像表示システム

Publications (3)

Publication Number Publication Date
JP2013042403A JP2013042403A (ja) 2013-02-28
JP2013042403A5 JP2013042403A5 (enExample) 2014-09-11
JP5853486B2 true JP5853486B2 (ja) 2016-02-09

Family

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Family Applications (1)

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JP2011178682A Expired - Fee Related JP5853486B2 (ja) 2011-08-18 2011-08-18 撮像装置および撮像表示システム

Country Status (5)

Country Link
US (1) US8901504B2 (enExample)
EP (1) EP2560373B1 (enExample)
JP (1) JP5853486B2 (enExample)
KR (1) KR101966991B1 (enExample)
CN (1) CN102957881B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101513406B1 (ko) 2006-09-29 2015-04-17 유니버시티 오브 플로리다 리서치 파운데이션, 인크. 적외선 감지 및 표시를 위한 방법 및 장치
CA2800549A1 (en) 2010-05-24 2011-12-01 University Of Florida Research Foundation, Inc. Method and apparatus for providing a charge blocking layer on an infrared up-conversion device
AU2012275060A1 (en) 2011-06-30 2014-01-30 Nanoholdings, Llc A method and apparatus for detecting infrared radiation with gain
DE102013110695A1 (de) * 2012-10-02 2014-04-03 Samsung Electronics Co., Ltd. Bildsensor, Verfahren zum Betreiben desselben und Bildverarbeitungssystem mit demselben
EP2948984A4 (en) * 2013-01-25 2016-08-24 Univ Florida Novel IR IMAGE SENSOR WITH A SOLUTION-PROCESSED PBS LIGHT DETECTOR
JP6195728B2 (ja) * 2013-04-30 2017-09-13 富士フイルム株式会社 固体撮像素子および撮像装置
EP3253047B1 (en) * 2015-01-28 2018-11-28 Panasonic Intellectual Property Management Co., Ltd. Solid-state imaging device and camera
WO2016175769A1 (en) * 2015-04-28 2016-11-03 Capso Vision Inc Image sensor with integrated power conservation control
EP3308113A4 (en) 2015-06-11 2019-03-20 University of Florida Research Foundation, Incorporated MONODISPERSES, IR ABSORBENT NANOPARTICLES AND RELATED METHODS AND DEVICES
CN108680587B (zh) 2018-05-09 2020-12-15 京东方科技集团股份有限公司 一种检测电路、信号处理方法和平板探测器
JP2023124986A (ja) * 2022-02-28 2023-09-07 キヤノン株式会社 光電変換装置及びその駆動方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4118154A1 (de) * 1991-06-03 1992-12-10 Philips Patentverwaltung Anordnung mit einer sensormatrix und einer ruecksetzanordnung
US5668375A (en) * 1996-08-26 1997-09-16 General Electric Company Fast scan reset for a large area x-ray detector
JP4019250B2 (ja) * 2001-11-14 2007-12-12 カシオ計算機株式会社 フォトセンサシステム及びフォトセンサシステムにおけるフォトセンサの駆動制御方法
JP4242258B2 (ja) * 2003-11-21 2009-03-25 シャープ株式会社 固体撮像素子
JP4316478B2 (ja) * 2004-11-18 2009-08-19 シャープ株式会社 画像センサおよびその駆動方法、並びに走査駆動器
JP4847202B2 (ja) * 2006-04-27 2011-12-28 キヤノン株式会社 撮像装置及び放射線撮像システム
JP4931232B2 (ja) * 2007-07-04 2012-05-16 キヤノン株式会社 撮像装置及びその処理方法
TWI357262B (en) * 2007-11-14 2012-01-21 Novatek Microelectronics Corp Method for resetting image sensing operation and i
JP2010183435A (ja) * 2009-02-06 2010-08-19 Toshiba Corp 固体撮像装置
JP5439984B2 (ja) * 2009-07-03 2014-03-12 ソニー株式会社 光電変換装置および放射線撮像装置
JP5218309B2 (ja) * 2009-07-14 2013-06-26 ソニー株式会社 固体撮像素子およびその制御方法、並びにカメラシステム
JP2011030060A (ja) * 2009-07-28 2011-02-10 Olympus Corp 固体撮像装置および撮像方法
JP5721994B2 (ja) 2009-11-27 2015-05-20 株式会社ジャパンディスプレイ 放射線撮像装置
JP2011178682A (ja) 2010-02-26 2011-09-15 Mitsui Chemicals Inc 遷移金属錯体化合物、該化合物を含むオレフィン多量化用触媒および該触媒存在下で行うオレフィン多量体の製造方法

Also Published As

Publication number Publication date
KR101966991B1 (ko) 2019-04-08
JP2013042403A (ja) 2013-02-28
EP2560373A2 (en) 2013-02-20
KR20130020566A (ko) 2013-02-27
US20130044250A1 (en) 2013-02-21
CN102957881B (zh) 2017-07-28
EP2560373B1 (en) 2018-02-28
CN102957881A (zh) 2013-03-06
US8901504B2 (en) 2014-12-02
EP2560373A3 (en) 2014-06-11

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