JP5843756B2 - パルス制御される高出力レーザダイオード用のヒートシンク - Google Patents

パルス制御される高出力レーザダイオード用のヒートシンク Download PDF

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Publication number
JP5843756B2
JP5843756B2 JP2012511254A JP2012511254A JP5843756B2 JP 5843756 B2 JP5843756 B2 JP 5843756B2 JP 2012511254 A JP2012511254 A JP 2012511254A JP 2012511254 A JP2012511254 A JP 2012511254A JP 5843756 B2 JP5843756 B2 JP 5843756B2
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Japan
Prior art keywords
semiconductor laser
layer
primary layer
primary
laser module
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Expired - Fee Related
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JP2012511254A
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English (en)
Japanese (ja)
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JP2012527754A (ja
JP2012527754A5 (enExample
Inventor
ヘアデン ヴェアナー
ヘアデン ヴェアナー
シュヴァーツ ハンス−ヨヘン
シュヴァーツ ハンス−ヨヘン
ピトロフ ヴォルフガング
ピトロフ ヴォルフガング
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Robert Bosch GmbH
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Robert Bosch GmbH
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/26—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device including materials for absorbing or reacting with moisture or other undesired substances, e.g. getters
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F02—COMBUSTION ENGINES; HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS
    • F02P—IGNITION, OTHER THAN COMPRESSION IGNITION, FOR INTERNAL-COMBUSTION ENGINES; TESTING OF IGNITION TIMING IN COMPRESSION-IGNITION ENGINES
    • F02P23/00—Other ignition
    • F02P23/04—Other physical ignition means, e.g. using laser rays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/094076—Pulsed or modulated pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/02365—Fixing laser chips on mounts by clamping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2012511254A 2009-05-22 2010-05-18 パルス制御される高出力レーザダイオード用のヒートシンク Expired - Fee Related JP5843756B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009026413A DE102009026413A1 (de) 2009-05-22 2009-05-22 Halbleiterlasermodul und Herstellungsverfahren hierfür
DE102009026413.2 2009-05-22
PCT/EP2010/056779 WO2010133572A1 (de) 2009-05-22 2010-05-18 Wärmesenke für gepulste hochleistungslaserdiode

Publications (3)

Publication Number Publication Date
JP2012527754A JP2012527754A (ja) 2012-11-08
JP2012527754A5 JP2012527754A5 (enExample) 2014-12-18
JP5843756B2 true JP5843756B2 (ja) 2016-01-13

Family

ID=42470725

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012511254A Expired - Fee Related JP5843756B2 (ja) 2009-05-22 2010-05-18 パルス制御される高出力レーザダイオード用のヒートシンク

Country Status (5)

Country Link
US (1) US8891567B2 (enExample)
EP (1) EP2433343A1 (enExample)
JP (1) JP5843756B2 (enExample)
DE (1) DE102009026413A1 (enExample)
WO (1) WO2010133572A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9933554B2 (en) 2013-07-03 2018-04-03 California Institute Of Technology High-coherence semiconductor light sources
AU2014284466A1 (en) 2013-07-03 2015-12-24 California Institute Of Technology High-coherence semiconductor light sources
JP2017515303A (ja) * 2014-03-31 2017-06-08 アイピージー フォトニクス コーポレーション 高パワーレーザーダイオードパッケージング及びレーザーダイオードモジュール
CN105244755B (zh) * 2015-10-24 2018-04-03 长沙青波光电科技有限公司 半导体激光单管芯片封装方法
US10866038B2 (en) * 2018-10-25 2020-12-15 United Arab Emirates University Heat sinks with vibration enhanced heat transfer for non-liquid heat sources
CN113847183B (zh) * 2021-09-23 2022-09-30 上海鑫歆源电子有限公司 一种热量控制模块、驱动电路及点火线圈驱动器

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1113920A (en) * 1967-04-18 1968-05-15 Standard Telephones Cables Ltd An improved laser unit
JPH02102756U (enExample) * 1989-01-31 1990-08-15
JPH0448656U (enExample) * 1990-08-31 1992-04-24
JPH0537089A (ja) * 1991-07-25 1993-02-12 Mitsubishi Electric Corp 半導体レーザ装置
JPH05326767A (ja) * 1992-03-19 1993-12-10 Sumitomo Electric Ind Ltd 放熱基板
JP3297948B2 (ja) * 1993-05-17 2002-07-02 ソニー株式会社 レーザ光学素子の固定方法及びレーザ光学装置
JPH08195528A (ja) * 1995-01-13 1996-07-30 Fujitsu Ltd レーザダイオードモジュール
FR2736764B1 (fr) * 1995-07-13 1997-08-08 Thomson Csf Source laser a semiconducteurs
JP2001156384A (ja) * 1999-11-29 2001-06-08 Nec Corp 半導体レーザ
JP2001330789A (ja) * 2000-05-19 2001-11-30 Ricoh Co Ltd 画像形成装置
US20030152773A1 (en) * 2002-02-14 2003-08-14 Chrysler Gregory M. Diamond integrated heat spreader and method of manufacturing same
JP2003318475A (ja) * 2002-04-24 2003-11-07 Kyocera Corp 光半導体素子のマウント構造
JP4037815B2 (ja) * 2003-09-29 2008-01-23 オムロンレーザーフロント株式会社 レーザダイオードモジュール、レーザ装置、及びレーザ加工装置
JP2007194467A (ja) * 2006-01-20 2007-08-02 Sharp Corp 半導体レーザ装置
US7551656B2 (en) * 2006-03-29 2009-06-23 Lockheed Martin Coherent Technologies, Inc. Low stress optics mount using thermally conductive liquid metal or gel
EP2191546B1 (en) * 2007-09-20 2018-01-17 II-VI Laser Enterprise GmbH High power semiconductor laser diodes

Also Published As

Publication number Publication date
US20120106582A1 (en) 2012-05-03
JP2012527754A (ja) 2012-11-08
US8891567B2 (en) 2014-11-18
WO2010133572A1 (de) 2010-11-25
DE102009026413A1 (de) 2010-11-25
EP2433343A1 (de) 2012-03-28

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