JP5827795B2 - アレイ基板及びその製造方法 - Google Patents
アレイ基板及びその製造方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims description 96
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000010409 thin film Substances 0.000 claims description 60
- 230000004888 barrier function Effects 0.000 claims description 53
- 238000005253 cladding Methods 0.000 claims description 52
- 238000000034 method Methods 0.000 claims description 36
- 239000000463 material Substances 0.000 claims description 28
- 238000000059 patterning Methods 0.000 claims description 21
- 229910052802 copper Inorganic materials 0.000 claims description 15
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- 229910052750 molybdenum Inorganic materials 0.000 claims description 9
- 229910001257 Nb alloy Inorganic materials 0.000 claims description 8
- 229910001069 Ti alloy Inorganic materials 0.000 claims description 8
- 239000010408 film Substances 0.000 claims description 8
- 230000001681 protective effect Effects 0.000 claims description 7
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 5
- 229910000838 Al alloy Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 description 20
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- 238000005530 etching Methods 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 239000007769 metal material Substances 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- JUZTWRXHHZRLED-UHFFFAOYSA-N [Si].[Cu].[Cu].[Cu].[Cu].[Cu] Chemical compound [Si].[Cu].[Cu].[Cu].[Cu].[Cu] JUZTWRXHHZRLED-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910021360 copper silicide Inorganic materials 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000009993 protective function Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- H—ELECTRICITY
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134372—Electrodes characterised by their geometrical arrangement for fringe field switching [FFS] where the common electrode is not patterned
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- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/13629—Multilayer wirings
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/136295—Materials; Compositions; Manufacture processes
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/50—Protective arrangements
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Description
図1は本発明の実施例1に係るアレイ基板の一部の上面視構造の概略図である。図2は図1のA−A線の断面の側面図である。
本発明の実施例2に係るアレイ基板の上面視構造は図1に示されたようである。図3は本発明の実施例2に係るアレイ基板の断面の側面図であり、実施例1との相違は以下の通りである。即ち、本実施例における回路パターンは、下バリア層15aと基礎導電層15bだけを備えるものである。実施例1と比べ、本実施例によれば、材料が更に省かれ、上バリア層薄膜を堆積する工程が減少される。
本発明の実施例3にアレイ基板の製造方法が提供される。この方法は以下のステップを備える。即ち、
ステップ110:ベース基板1にマグネトロンスパッタリング法によりゲート金属薄膜を堆積し、ゲート金属薄膜において基礎導電層15bを製造するための材料はCu、又はAl、又はその合金であってもよい。
2 ゲートスキャンライン
3 データライン
4 ゲート電極
5 共通電極
6 共通電極ライン
7 活性層
8 ソース電極
9 ドレイン電極
10 ゲート絶縁層
11 保護膜層
12 画素電極
13 第1のクラッド層
14 第2のクラッド層
15a 下バリア層
15b 基礎導電層
15c 上バリア層
Claims (16)
- アレイ基板であって、
ベース基板と、
前記ベース基板に配置された回路パターンと、
前記回路パターンの上面及び側面を覆うと共に接したクラッド層と、を備え、
前記ベース基板に複数の画素ユニットのゲートスキャンライン及びデータラインと、各画素ユニット中に形成されるTFTスイッチ及び画素電極とを形成し、
前記TFTスイッチがゲート電極と、活性層と、ソース電極と、ドレイン電極とを有し、前記回路パターンが前記データラインと、ソース電極と、ドレイン電極とを有し、
前記クラッド層と前記画素電極が同じ材料により形成され、
前記クラッド層が、前記ソース電極及び前記データラインの上面及び側面を覆う第1の部分と、前記ドレイン電極の上面及び側面を覆う第2の部分とを含み、前記第1の部分及び前記第2の部分が互いに離隔され、前記第2の部分が前記画素電極へ電気的に接続されることを特徴とするアレイ基板。 - 前記回路パターンは少なくとも基礎導電層を備えることを特徴とする請求項1に記載のアレイ基板。
- 前記回路パターンは、前記基礎導電層の下面の下に配置された下バリア層を更に備え、前記下バリア層は前記基礎導電層の下面に接することを特徴とする請求項2に記載のアレイ基板。
- 前記回路パターンは、前記基礎導電層の上面の上に配置された上バリア層を更に備え、前記上バリア層は前記基礎導電層の上面に接し、前記クラッド層の下において前記基礎導電層の上面を覆うことを特徴とする請求項2に記載のアレイ基板。
- 前記回路パターンは、前記基礎導電層の上面の上に配置された上バリア層を更に備え、前記上バリア層は前記基礎導電層の上面に接し、前記クラッド層の下において前記基礎導電層の上面を覆うことを特徴とする請求項3に記載のアレイ基板。
- 前記基礎導電層の材料はCu、Al、Cu合金又はAl合金であることを特徴とする請求項2に記載のアレイ基板。
- 前記クラッド層の材料はInSn酸化物、InZn酸化物、Mo、Mo−Nb合金、Mo−Ti合金、Ti又は窒化チタンであることを特徴とする請求項1に記載のアレイ基板。
- 前記下バリア層の材料はMo、Mo−Nb合金、Mo−Ti合金、Ti又は窒化チタンであることを特徴とする請求項3に記載のアレイ基板。
- 前記上バリア層の材料はMo、Mo−Nb合金、Mo−Ti合金、Ti又は窒化チタンであることを特徴とする請求項4に記載のアレイ基板。
- 前記基板に設けられ、前記ゲートスキャンラインとゲート電極を含む第2の回路パターンと、
前記第2の回路パターンの上面及び側面を覆うと共に接した第2のクラッド層と、をさらに備えることを特徴とする請求項1に記載のアレイ基板。 - 前記ベース基板の各画素領域における共通電極を更に備え、
前記共通電極は画素ユニットを覆うブロック状のパターンであり、前記画素電極は隙間を有する櫛状のパターンであり、前記第2のクラッド層と前記共通電極は同じ材料により形成されることを特徴とする請求項1に記載のアレイ基板。 - 前記ベース基板における共通電極ラインを更に備え、前記クラッド層は前記共通電極ラインの上面及び側面を覆うことを特徴とする請求項1に記載のアレイ基板。
- アレイ基板の製造方法であって、
ベース基板に回路パターン薄膜を堆積すると共に、前記回路パターン薄膜に対してパターニングを行って前記回路パターンを形成するステップと、
前記回路パターンが形成されたベース基板にクラッド層薄膜を堆積すると共に、前記クラッド層薄膜に対してパターニングを行って、前記回路パターンの上面及び側面を覆うクラッド層のパターンを形成するステップと、を備え、
ゲートスキャンラインと、ゲート電極とが形成されたベース基板にゲート絶縁層を形成し、前記ゲート絶縁層に活性層と、データラインと、ソース電極と、ドレイン電極とを含むパターンを形成して前記回路パターンとし、
前記パターンが形成されたベース基板に画素電極薄膜を堆積すると共に、前記画素電極薄膜に対してパターニングを行って、前記クラッド層と画素電極を含むパターンを形成し、前記クラッド層は前記データラインと、ソース電極と、ドレイン電極との上面及び側面を覆い、
前記クラッド層が、前記ソース電極及び前記データラインの上面及び側面を覆う第1の部分と、前記ドレイン電極の上面及び側面を覆う第2の部分とを含み、前記第1の部分及び前記第2の部分が互いに離隔され、前記第2の部分が前記画素電極へ電気的に接続されることを特徴とするアレイ基板の製造方法。 - ベース基板に堆積した回路パターン薄膜は、
ベース基板に下バリア層薄膜、基礎導電層薄膜、及び上バリア層薄膜を連続に堆積してなる前記回路パターン薄膜、又は、
ベース基板に基礎導電層薄膜、上バリア層薄膜を連続に堆積してなる前記回路パターン薄膜、又は、
ベース基板に下バリア層薄膜、基礎導電層薄膜を連続に堆積してなる前記回路パターン薄膜、又は、
ベース基板に基礎導電層薄膜を堆積してなる前記回路パターン薄膜を含むことを特徴とする請求項13に記載のアレイ基板の製造方法。 - ベース基板にゲートスキャンラインとゲート電極を含むパターンを形成して前記回路パターンとし、
前記パターンが形成されたベース基板に共通電極薄膜を堆積すると共に、前記共通電極薄膜に対してパターニングを行って、前記クラッド層と共通電極を含むパターンを形成し、前記クラッド層は前記ゲートスキャンラインと、ゲート電極との上面及び側面を覆うことを特徴とする請求項13に記載のアレイ基板の製造方法。 - 前記クラッド層と画素電極が形成された後、前記クラッド層と画素電極が形成されたベース基板に保護膜層を更に形成する工程を含むことを特徴とする請求項13に記載のアレイ基板の製造方法。
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