JP5826094B2 - ｐ型半導体材料、および光電変換装置の作製方法 - Google Patents

ｐ型半導体材料、および光電変換装置の作製方法 Download PDF

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JP5826094B2
JP5826094B2 JP2012080227A JP2012080227A JP5826094B2 JP 5826094 B2 JP5826094 B2 JP 5826094B2 JP 2012080227 A JP2012080227 A JP 2012080227A JP 2012080227 A JP2012080227 A JP 2012080227A JP 5826094 B2 JP5826094 B2 JP 5826094B2
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molybdenum
moo
semiconductor layer
silicon substrate
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JP2013211397A5 (enExample
JP2013211397A (ja
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李甫 堅石
李甫 堅石
良信 浅見
良信 浅見
山崎　舜平
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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JP2012080227A 2012-03-30 2012-03-30 ｐ型半導体材料、および光電変換装置の作製方法 Expired - Fee Related JP5826094B2 (ja)

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JP2013211397A5 JP2013211397A5 (enExample) 2015-03-05
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Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3711702A1 (en) 2014-03-17 2020-09-23 Intuitive Surgical Operations, Inc. Mounting datum for surgical instrument
JP6389639B2 (ja) * 2014-05-14 2018-09-12 シャープ株式会社 光電変換素子
US11087977B2 (en) * 2016-08-31 2021-08-10 Flosfia Inc P-type oxide semiconductor and method for manufacturing same
JP7248961B2 (ja) * 2017-08-24 2023-03-30 株式会社Flosfia 半導体装置
JP7248962B2 (ja) * 2017-08-24 2023-03-30 株式会社Flosfia 半導体装置
CN115472705B (zh) * 2022-09-05 2024-05-17 深圳技术大学 一种光敏电阻材料及其制备方法
CN120505703B (zh) * 2025-07-22 2025-10-28 崇义章源钨业股份有限公司 一种三氧化钼单晶带及其制备方法

Family Cites Families (11)

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RU2396210C2 (ru) * 2003-07-22 2010-08-10 Х.К.Штарк Инк. ПОРОШОК MoO2, СПОСОБЫ ИЗГОТОВЛЕНИЯ ПЛАСТИНЫ ИЗ ПОРОШКА MoO2 (ИХ ВАРИАНТЫ), ЭЛЕМЕНТ И СПОСОБ ИЗГОТОВЛЕНИЯ ТОНКОЙ ПЛЕНКИ ИЗ НЕЕ, СПОСОБ РАСПЫЛЕНИЯ С ПРИМЕНЕНИЕМ УКАЗАННОЙ ПЛАСТИНЫ
JP4345105B2 (ja) * 2004-04-27 2009-10-14 日本新金属株式会社 スパッタリング用高純度金属Ｍｏ焼結ターゲットの製造に原料粉末として用いるのに適した高純度金属Ｍｏ粗粒粉末の製造方法
JP4576201B2 (ja) * 2004-10-26 2010-11-04 創世理工株式会社 三酸化モリブデン層の作製方法
JP2007288071A (ja) * 2006-04-19 2007-11-01 Matsushita Electric Ind Co Ltd 有機エレクトロルミネッセント素子およびその製造方法、それを用いた表示装置、露光装置
FR2922364B1 (fr) * 2007-10-12 2014-08-22 Saint Gobain Procede de fabrication d'une electrode en oxyde de molybdene
JP2009231610A (ja) * 2008-03-24 2009-10-08 Pioneer Electronic Corp 有機太陽電池及び有機太陽電池の製造方法
JP4829926B2 (ja) * 2008-05-29 2011-12-07 本田技研工業株式会社 太陽電池及び太陽電池の製造方法
JP5351628B2 (ja) * 2009-06-22 2013-11-27 株式会社カネカ 結晶シリコン系太陽電池
JP2012038783A (ja) * 2010-08-03 2012-02-23 Gifu Univ 光電変換素子
JP6108858B2 (ja) * 2012-02-17 2017-04-05 株式会社半導体エネルギー研究所 ｐ型半導体材料および半導体装置
JP2013191714A (ja) * 2012-03-14 2013-09-26 Semiconductor Energy Lab Co Ltd 光電変換装置

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