JP5819187B2 - 発光調整方法及びその方法を用いて製造されたデバイス - Google Patents

発光調整方法及びその方法を用いて製造されたデバイス Download PDF

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JP5819187B2
JP5819187B2 JP2011502981A JP2011502981A JP5819187B2 JP 5819187 B2 JP5819187 B2 JP 5819187B2 JP 2011502981 A JP2011502981 A JP 2011502981A JP 2011502981 A JP2011502981 A JP 2011502981A JP 5819187 B2 JP5819187 B2 JP 5819187B2
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led
wafer
conversion material
leds
light
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JP2011517090A5 (enExample
JP2011517090A (ja
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アシェイ シトニス
アシェイ シトニス
ジョン エドモンド
ジョン エドモンド
ジェフリー シー． ブリット
ジェフリー シー． ブリット
ベルント ピー． ケラー
ベルント ピー． ケラー
デービッド ティー． エマーソン
デービッド ティー． エマーソン
マイケル ジョン バーグマン
マイケル ジョン バーグマン
ジャスパー エス． カバル
ジャスパー エス． カバル
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Wolfspeed Inc
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Cree Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8516—Wavelength conversion means having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T408/00—Cutting by use of rotating axially moving tool
    • Y10T408/47—Cutting by use of rotating axially moving tool with work-infeed means
JP2011502981A 2008-03-31 2009-03-31 発光調整方法及びその方法を用いて製造されたデバイス Active JP5819187B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US7254608P 2008-03-31 2008-03-31
US61/072,546 2008-03-31
US12/414,457 2009-03-30
US12/414,457 US8877524B2 (en) 2008-03-31 2009-03-30 Emission tuning methods and devices fabricated utilizing methods
PCT/US2009/002039 WO2009123726A2 (en) 2008-03-31 2009-03-31 Emission tuning methods and devices fabricated utilizing methods

Publications (3)

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JP2011517090A JP2011517090A (ja) 2011-05-26
JP2011517090A5 JP2011517090A5 (enExample) 2011-07-28
JP5819187B2 true JP5819187B2 (ja) 2015-11-18

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US (1) US8877524B2 (enExample)
EP (1) EP2283526B1 (enExample)
JP (1) JP5819187B2 (enExample)
KR (1) KR20100132536A (enExample)
CN (1) CN102047456B (enExample)
WO (1) WO2009123726A2 (enExample)

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EP2283526B1 (en) 2019-12-11
WO2009123726A2 (en) 2009-10-08
JP2011517090A (ja) 2011-05-26
CN102047456A (zh) 2011-05-04
KR20100132536A (ko) 2010-12-17
US20090261358A1 (en) 2009-10-22
WO2009123726A3 (en) 2010-02-18
CN102047456B (zh) 2016-06-08
US8877524B2 (en) 2014-11-04

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