JP5819187B2 - 発光調整方法及びその方法を用いて製造されたデバイス - Google Patents
発光調整方法及びその方法を用いて製造されたデバイス Download PDFInfo
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T408/00—Cutting by use of rotating axially moving tool
- Y10T408/47—Cutting by use of rotating axially moving tool with work-infeed means
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Description
[背景技術]
[技術分野]
本発明は、半導体発光素子を製造する方法、特に、変換材料が塗布された点に特徴がある発光ダイオードの発光特性を調整する方法に関する。
[関連技術の詳細]
発光ダイオード(1個のLEDまたは複数のLED)とは、電気エネルギーを光に変換する半導体デバイスであり、一般に、互いに異なる導電型にドープ(添加)された層に挟まれた、半導体材料からなる1つ以上の活性層を有している。両ドープ層間にバイアスをかけると、正孔と電子が活性層に注入され、そこで再結合して光を発生させる。そして、活性層及びLEDの全表面から発光する。
[発明の概要]
本発明は、LEDチップ等の半導体デバイスをウェハレベルで製造する新たな方法、並びに、本方法を用いて製造されたLEDチップ及びLEDチップウェハを開示する。本発明は、LEDチップの変換材料によって変換されるLED光の量を変更することによって、LEDチップの発光特性を制御することに関する。変換される光の量を変更する1つの手法として、LED上にある変換材料の量を減らすことによるものが挙げられる。本発明に係る方法は特に、ほぼ目標の発光特性で、もしくはCIE曲線上の色度領域といった発光特性の範囲内で発光するLEDチップを高産出高で供給するために、LEDチップ上にある変換材料をウェハレベルで変更することに適用可能である。本発明はまた、マカダム楕円による標準偏差の範囲内、例えば4ステップマカダム楕円の範囲内での高い発光量を有する、LEDチップのウェハレベルでの製造に使用可能である。
本発明は、発光素子上の変換材料の量を変更することによって半導体発光素子の発光特性を調整する方法に関し、また、本方法を用いて製造された発光素子に関する。本発明は、ウェハレベルでのLEDの製造に適用可能であり、また、ウェハレベルで変換材料を変更することによって、ウェハ面内にあるLEDチップの発光特性のばらつきを低減もしくは解消する製造方法を提供する。また、本発明に係る本方法を使用することにより、ウェハから分割された、個々のLEDまたはLED群の発光特性を変化させることも可能である。
Tb3-xRExO12:Ce(TAG);RE=Y,Gd,La,Lu;または
Sr2-x-yBaxCaySiO4:Eu
異なる白色の色相(温白色)のCRIがより高い白色を得るためには、第1の蛍光物質及び第2の蛍光物質を組み合わせることも可能である。上記の黄色蛍光物質に赤色蛍光物質を組み合わせることも可能である。以下のものを含む、様々な赤色蛍光物質が使用可能である。
SrxCa1-xS:Eu,Y;Y=ハロゲン化合物;
CaSiAlN3:Eu;または
Sr2-yCaySiO4:Eu
実質的に全ての光をある特定の色に変換することによって、他の蛍光物質を用いて純色の発光を発生させることも可能である。例えば、以下の蛍光物質を用いて緑の純色光を発生させることができる。
SrGa2S4:Eu;
Sr2-yBaySiO4:Eu;または
SrSi2O2N2:Eu
以下に、変換粒子として使用可能な、好適な蛍光物質を追加的に列記するが、別のものも使用されることができる。それぞれが青色発光スペクトル及び/またはUV発光スペクトルにおいて励起を示し、所望のピーク発光が得られ、光変換効率がよく、そして、許容範囲のストークスシフトを有している。
黄色/緑色
(Sr,Ca,Ba)(Al,Ga)2S4:Eu2+
Ba2(Mg,Zn)Si2O7:Eu2+
Gd0.46Sr0.31Al1.23OxF1.38:Eu2+ 0.06
(Ba1-x-ySrxCay)SiO4:Eu
Ba2SiO4:Eu2+
赤色
Lu2O3:Eu3+
(Sr2-xLax)(Ce1-xEux)O4
Sr2Ce1-xEuxO4
Sr2-xEuxCeO4
SrTiO3:Pr3+,Ga3+
CaAlSiN3:Eu2+
Sr2Si5N8:Eu2+
径が10〜100ナノメートル(nm)から20〜30μm、もしくはそれ以上の粒子を含む、様々な粒子径の蛍光物質粒子が使用可能であるが、これらに限定されるものではない。小さい径の粒子の方が一般的に大きい径の粒子よりもより良く色を散乱・混合して、より均一な光が得られる。一方、大きい径の粒子は一般的に、小さい径の粒子に比べて光変換が効率的であるが、均一性が劣る光を放出する。一実施形態では、粒子径は2〜5μmの範囲内にある。他の実施形態では、単色光源または多色光源の場合、被覆は様々な種類の蛍光物質を有していても、または、複数の蛍光物質被膜からなっていてもよい。
Claims (12)
- 発光ダイオード(LED)上に変換材料を塗布したLEDチップの製造方法であって、
ウェハ上に複数の前記LEDを設けるステップと、
前記LEDに、前記変換材料を、前記LEDからの光のうちの少なくとも一部が前記変換材料を通過して変換されるように塗布するステップと、
前記LEDチップのうちの少なくともいくつかの発光特性を測定するステップと、
前記LEDのうちの少なくともいくつかを覆う前記変換材料の表面変動を測定するステップと、
前記LEDチップが目標の発光特性の範囲内で発光するように、前記LEDのうちの少なくともいくつかを覆う前記変換材料のうち除去が必要な変換材料の量を、測定した前記発光特性及び測定した前記表面変動の分布に基づいて計算し、該計算に基づいて、前記LEDのうちの少なくともいくつかの上にある前記変換材料のうちの少なくとも一部を除去して、前記LEDチップが目標の発光特性の範囲内で発光するように前記LEDチップの発光特性を変更するステップと、
を含む方法。 - さらに、測定した前記ウェハ上のLED表面の表面変動の凹凸の大きさに基づいて、前記LEDの表面の表面変動分布を作成するステップを含み、前記LED上においてどの程度の変換材料が除去されるかが決定されると、除去のための加工量を、測定した表面変動の凹凸の大きさに基づいて加減する、請求項1記載の方法。
- 除去される変換材料の量は、目標の発光特性の範囲に対する前記LEDチップの発光特性によって決定される請求項1又は請求項2に記載の方法。
- 前記LEDチップは白色光を発光する請求項1〜3の何れか1項に記載の方法。
- さらに、前記変換材料の除去後、前記LEDのうちの少なくともいくつかの発光特性に対して2度目の測定を行うステップを含み、
さらに、前記LEDのうちの少なくともいくつかの上にある前記変換材料のうちの少なくとも一部に対して2度目の除去を行い、前記LEDチップの発光特性を変更するステップを含む、請求項1〜4の何れか1項に記載の方法。 - さらに、前記複数のLEDの発光特性のマップを作成するステップを含む請求項1〜5の何れか1項に記載の方法。
- 前記変換材料の前記除去は、マクロ加工、微細加工、又は微細穴あけ加工を含む請求項1〜6の何れか1項に記載の方法。
- さらに、前記変換材料の表面の変化を測定するステップと、微細穴あけ加工時に、加工する深さを、測定した前記表面の変化の大きさに基づいて加減するステップと、を含む請求項7記載の方法。
- 前記微細穴あけ加工は、マイクロドリルと連係して前記ウェハをサブミクロン刻みで移動させるステップを含む請求項7又は請求項8に記載の方法。
- さらに、前記発光特性測定後に、同様の発光特性を有する領域のマップを作成するステップを含み、さらに、前記LEDのうちの少なくともいくつかのLED上にある変換材料の前記除去の前に、前記領域上の変換材料の広範囲除去を行うステップを含む請求項1〜9の何れか1項に記載の方法。
- 前記発光特性の前記測定は、前記変換材料のうちの少なくとも一部分の前記除去と同時に行われる請求項1〜10の何れか1項に記載の方法。
- さらに、前記発光特性の前記測定前に、前記LED上の前記塗布した変換材料を平坦化するステップを含む請求項1〜11の何れか1項に記載の方法。
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2009
- 2009-03-30 US US12/414,457 patent/US8877524B2/en active Active
- 2009-03-31 JP JP2011502981A patent/JP5819187B2/ja active Active
- 2009-03-31 KR KR1020107024150A patent/KR20100132536A/ko not_active Application Discontinuation
- 2009-03-31 WO PCT/US2009/002039 patent/WO2009123726A2/en active Application Filing
- 2009-03-31 CN CN200980121201.4A patent/CN102047456B/zh active Active
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CN102047456A (zh) | 2011-05-04 |
CN102047456B (zh) | 2016-06-08 |
WO2009123726A3 (en) | 2010-02-18 |
EP2283526A2 (en) | 2011-02-16 |
JP2011517090A (ja) | 2011-05-26 |
US20090261358A1 (en) | 2009-10-22 |
WO2009123726A2 (en) | 2009-10-08 |
US8877524B2 (en) | 2014-11-04 |
KR20100132536A (ko) | 2010-12-17 |
EP2283526B1 (en) | 2019-12-11 |
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