JP5798283B2 - 軸対称及び均一熱プロファイルの真空チャック型ヒーター - Google Patents

軸対称及び均一熱プロファイルの真空チャック型ヒーター Download PDF

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Publication number
JP5798283B2
JP5798283B2 JP2008196676A JP2008196676A JP5798283B2 JP 5798283 B2 JP5798283 B2 JP 5798283B2 JP 2008196676 A JP2008196676 A JP 2008196676A JP 2008196676 A JP2008196676 A JP 2008196676A JP 5798283 B2 JP5798283 B2 JP 5798283B2
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Japan
Prior art keywords
vacuum chuck
heater
circular groove
grooves
vacuum
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Expired - Fee Related
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JP2008196676A
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English (en)
Japanese (ja)
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JP2009033178A (ja
JP2009033178A5 (enExample
Inventor
ルー シキング
ルー シキング
チャンドラセカラン バラジ
チャンドラセカラン バラジ
エドワード ジー ポール
エドワード ジー ポール
ケー． イングル ナイチン
ケー． イングル ナイチン
ルボミールスキー ドミトリー
ルボミールスキー ドミトリー
ユアン ツェン
ユアン ツェン
ワイ． イェー エリー
ワイ． イェー エリー
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Applied Materials Inc
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Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
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Publication of JP2009033178A publication Critical patent/JP2009033178A/ja
Publication of JP2009033178A5 publication Critical patent/JP2009033178A5/ja
Application granted granted Critical
Publication of JP5798283B2 publication Critical patent/JP5798283B2/ja
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T279/00—Chucks or sockets
    • Y10T279/11—Vacuum

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
JP2008196676A 2007-07-30 2008-07-30 軸対称及び均一熱プロファイルの真空チャック型ヒーター Expired - Fee Related JP5798283B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/830,589 US20090031955A1 (en) 2007-07-30 2007-07-30 Vacuum chucking heater of axisymmetrical and uniform thermal profile
US11/830,589 2007-07-30

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013259036A Division JP2014053645A (ja) 2007-07-30 2013-12-16 軸対称及び均一熱プロファイルの真空チャック型ヒーター

Publications (3)

Publication Number Publication Date
JP2009033178A JP2009033178A (ja) 2009-02-12
JP2009033178A5 JP2009033178A5 (enExample) 2011-09-15
JP5798283B2 true JP5798283B2 (ja) 2015-10-21

Family

ID=40330933

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2008196676A Expired - Fee Related JP5798283B2 (ja) 2007-07-30 2008-07-30 軸対称及び均一熱プロファイルの真空チャック型ヒーター
JP2013259036A Withdrawn JP2014053645A (ja) 2007-07-30 2013-12-16 軸対称及び均一熱プロファイルの真空チャック型ヒーター

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2013259036A Withdrawn JP2014053645A (ja) 2007-07-30 2013-12-16 軸対称及び均一熱プロファイルの真空チャック型ヒーター

Country Status (6)

Country Link
US (1) US20090031955A1 (enExample)
JP (2) JP5798283B2 (enExample)
KR (2) KR101062595B1 (enExample)
CN (1) CN101358338B (enExample)
SG (1) SG149792A1 (enExample)
TW (1) TWI491757B (enExample)

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US8791392B2 (en) 2010-10-22 2014-07-29 Lam Research Corporation Methods of fault detection for multiplexed heater array
US8546732B2 (en) * 2010-11-10 2013-10-01 Lam Research Corporation Heating plate with planar heater zones for semiconductor processing
DE102010055675A1 (de) * 2010-12-22 2012-06-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Haltevorrichtung für Substrate sowie Verfahren zur Beschichtung eines Substrates
JP6114698B2 (ja) 2011-03-01 2017-04-12 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ デュアルロードロック構成内の除害及びストリップ処理チャンバ
CN203205393U (zh) 2011-03-01 2013-09-18 应用材料公司 用于转移基板及限制自由基的箍组件
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US11171008B2 (en) 2011-03-01 2021-11-09 Applied Materials, Inc. Abatement and strip process chamber in a dual load lock configuration
US20120267423A1 (en) * 2011-04-19 2012-10-25 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and Apparatus for Thin Die Processing
US10242890B2 (en) * 2011-08-08 2019-03-26 Applied Materials, Inc. Substrate support with heater
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CN106847737B (zh) 2012-02-29 2020-11-13 应用材料公司 配置中的除污及剥除处理腔室
US9478447B2 (en) * 2012-11-26 2016-10-25 Applied Materials, Inc. Substrate support with wire mesh plasma containment
CN104637854B (zh) * 2013-11-13 2018-12-07 沈阳新松机器人自动化股份有限公司 一种用于吸附硅片的吸盘
CN112053991B (zh) * 2014-05-21 2022-04-15 应用材料公司 热处理基座
CN105161449A (zh) * 2014-05-30 2015-12-16 盛美半导体设备（上海）有限公司 晶圆固定装置
KR101477660B1 (ko) * 2014-08-01 2014-12-31 (주)지원에프알에스 탄성링 및 탄성밴드를 이용하여 완충칼럼의 복원력을 향상시킨 기능성 신발물품
JP6394337B2 (ja) * 2014-12-04 2018-09-26 株式会社Sumco 吸着チャック、面取り研磨装置、及び、シリコンウェーハの面取り研磨方法
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
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JP6674800B2 (ja) * 2016-03-07 2020-04-01 日本特殊陶業株式会社 基板支持装置
KR102523850B1 (ko) * 2016-07-11 2023-04-21 주식회사 미코세라믹스 척 구조물 및 척 구조물을 갖는 칩 분리 장치
JP6847610B2 (ja) * 2016-09-14 2021-03-24 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
US10468290B2 (en) * 2016-11-02 2019-11-05 Ultratech, Inc. Wafer chuck apparatus with micro-channel regions
JP6829118B2 (ja) * 2017-03-16 2021-02-10 株式会社日本製鋼所 レーザ照射装置、レーザ照射方法、及び半導体装置の製造方法
KR102339350B1 (ko) * 2017-04-03 2021-12-16 주식회사 미코세라믹스 세라믹 히터
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JP6959201B2 (ja) * 2018-08-29 2021-11-02 日本碍子株式会社 セラミックヒータ
CN109280904A (zh) * 2018-11-27 2019-01-29 中山德华芯片技术有限公司 一种应用于晶格失配结构外延生长的石墨盘
CN111168870A (zh) * 2020-02-27 2020-05-19 石嘴山市新宇兰山电碳有限公司 一种数控车床专用曲面加工真空吸附模具
CN111490002B (zh) * 2020-04-21 2023-06-27 錼创显示科技股份有限公司 载盘结构
JP7391294B2 (ja) * 2021-12-23 2023-12-05 住友電気工業株式会社 ヒータ
CN115142050B (zh) * 2022-09-05 2022-11-25 拓荆科技(北京)有限公司 真空吸附加热盘及装置
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Also Published As

Publication number Publication date
KR101495513B1 (ko) 2015-03-03
JP2009033178A (ja) 2009-02-12
TWI491757B (zh) 2015-07-11
CN101358338A (zh) 2009-02-04
KR101062595B1 (ko) 2011-09-06
CN101358338B (zh) 2012-05-16
US20090031955A1 (en) 2009-02-05
TW200923118A (en) 2009-06-01
KR20110068955A (ko) 2011-06-22
SG149792A1 (en) 2009-02-27
KR20090013077A (ko) 2009-02-04
JP2014053645A (ja) 2014-03-20

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