KR101062595B1 - 축대칭이며 균일한 열 프로파일의 진공 처킹 히터 - Google Patents

축대칭이며 균일한 열 프로파일의 진공 처킹 히터 Download PDF

Info

Publication number
KR101062595B1
KR101062595B1 KR1020080074005A KR20080074005A KR101062595B1 KR 101062595 B1 KR101062595 B1 KR 101062595B1 KR 1020080074005 A KR1020080074005 A KR 1020080074005A KR 20080074005 A KR20080074005 A KR 20080074005A KR 101062595 B1 KR101062595 B1 KR 101062595B1
Authority
KR
South Korea
Prior art keywords
circular groove
vacuum chuck
groove
chucking
vacuum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020080074005A
Other languages
English (en)
Korean (ko)
Other versions
KR20090013077A (ko
Inventor
시큉 루
발라지 찬드라세카란
폴 에드워드 지
니틴 케이. 잉글
드미트리 루보미르스키
쳉 유안
엘리 와이. 이에
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20090013077A publication Critical patent/KR20090013077A/ko
Application granted granted Critical
Publication of KR101062595B1 publication Critical patent/KR101062595B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T279/00—Chucks or sockets
    • Y10T279/11—Vacuum

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020080074005A 2007-07-30 2008-07-29 축대칭이며 균일한 열 프로파일의 진공 처킹 히터 Expired - Fee Related KR101062595B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/830,589 US20090031955A1 (en) 2007-07-30 2007-07-30 Vacuum chucking heater of axisymmetrical and uniform thermal profile
US11/830,589 2007-07-30

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020110040280A Division KR101495513B1 (ko) 2007-07-30 2011-04-28 축대칭이며 균일한 열 프로파일의 진공 처킹 히터

Publications (2)

Publication Number Publication Date
KR20090013077A KR20090013077A (ko) 2009-02-04
KR101062595B1 true KR101062595B1 (ko) 2011-09-06

Family

ID=40330933

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020080074005A Expired - Fee Related KR101062595B1 (ko) 2007-07-30 2008-07-29 축대칭이며 균일한 열 프로파일의 진공 처킹 히터
KR1020110040280A Active KR101495513B1 (ko) 2007-07-30 2011-04-28 축대칭이며 균일한 열 프로파일의 진공 처킹 히터

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020110040280A Active KR101495513B1 (ko) 2007-07-30 2011-04-28 축대칭이며 균일한 열 프로파일의 진공 처킹 히터

Country Status (6)

Country Link
US (1) US20090031955A1 (enExample)
JP (2) JP5798283B2 (enExample)
KR (2) KR101062595B1 (enExample)
CN (1) CN101358338B (enExample)
SG (1) SG149792A1 (enExample)
TW (1) TWI491757B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016017920A1 (ko) * 2014-08-01 2016-02-04 (주)지원에프알에스 탄성링 및 탄성밴드를 이용하여 완충칼럼의 복원력을 향상시킨 기능성 신발물품

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8198567B2 (en) * 2008-01-15 2012-06-12 Applied Materials, Inc. High temperature vacuum chuck assembly
US8637794B2 (en) * 2009-10-21 2014-01-28 Lam Research Corporation Heating plate with planar heating zones for semiconductor processing
US8791392B2 (en) 2010-10-22 2014-07-29 Lam Research Corporation Methods of fault detection for multiplexed heater array
US8546732B2 (en) * 2010-11-10 2013-10-01 Lam Research Corporation Heating plate with planar heater zones for semiconductor processing
DE102010055675A1 (de) * 2010-12-22 2012-06-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Haltevorrichtung für Substrate sowie Verfahren zur Beschichtung eines Substrates
JP6114698B2 (ja) 2011-03-01 2017-04-12 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ デュアルロードロック構成内の除害及びストリップ処理チャンバ
CN203205393U (zh) 2011-03-01 2013-09-18 应用材料公司 用于转移基板及限制自由基的箍组件
WO2012118606A2 (en) * 2011-03-01 2012-09-07 Applied Materials, Inc. Thin heated substrate support
US11171008B2 (en) 2011-03-01 2021-11-09 Applied Materials, Inc. Abatement and strip process chamber in a dual load lock configuration
US20120267423A1 (en) * 2011-04-19 2012-10-25 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and Apparatus for Thin Die Processing
US10242890B2 (en) * 2011-08-08 2019-03-26 Applied Materials, Inc. Substrate support with heater
DE102012100825A1 (de) 2011-12-01 2013-06-06 solar-semi GmbH Vorrichtung zum Bearbeiten eines Substrats und Verfahren hierzu
CN106847737B (zh) 2012-02-29 2020-11-13 应用材料公司 配置中的除污及剥除处理腔室
US9478447B2 (en) * 2012-11-26 2016-10-25 Applied Materials, Inc. Substrate support with wire mesh plasma containment
CN104637854B (zh) * 2013-11-13 2018-12-07 沈阳新松机器人自动化股份有限公司 一种用于吸附硅片的吸盘
CN112053991B (zh) * 2014-05-21 2022-04-15 应用材料公司 热处理基座
CN105161449A (zh) * 2014-05-30 2015-12-16 盛美半导体设备（上海）有限公司 晶圆固定装置
JP6394337B2 (ja) * 2014-12-04 2018-09-26 株式会社Sumco 吸着チャック、面取り研磨装置、及び、シリコンウェーハの面取り研磨方法
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
JP6674800B2 (ja) * 2016-03-07 2020-04-01 日本特殊陶業株式会社 基板支持装置
KR102523850B1 (ko) * 2016-07-11 2023-04-21 주식회사 미코세라믹스 척 구조물 및 척 구조물을 갖는 칩 분리 장치
JP6847610B2 (ja) * 2016-09-14 2021-03-24 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
US10468290B2 (en) * 2016-11-02 2019-11-05 Ultratech, Inc. Wafer chuck apparatus with micro-channel regions
JP6829118B2 (ja) * 2017-03-16 2021-02-10 株式会社日本製鋼所 レーザ照射装置、レーザ照射方法、及び半導体装置の製造方法
KR102339350B1 (ko) * 2017-04-03 2021-12-16 주식회사 미코세라믹스 세라믹 히터
US20210202282A1 (en) * 2017-10-19 2021-07-01 Evatec Ag Method and apparatus for treating a substrate
US11361981B2 (en) * 2018-05-02 2022-06-14 Applied Materials, Inc. Batch substrate support with warped substrate capability
JP6959201B2 (ja) * 2018-08-29 2021-11-02 日本碍子株式会社 セラミックヒータ
CN109280904A (zh) * 2018-11-27 2019-01-29 中山德华芯片技术有限公司 一种应用于晶格失配结构外延生长的石墨盘
CN111168870A (zh) * 2020-02-27 2020-05-19 石嘴山市新宇兰山电碳有限公司 一种数控车床专用曲面加工真空吸附模具
CN111490002B (zh) * 2020-04-21 2023-06-27 錼创显示科技股份有限公司 载盘结构
JP7391294B2 (ja) * 2021-12-23 2023-12-05 住友電気工業株式会社 ヒータ
CN115142050B (zh) * 2022-09-05 2022-11-25 拓荆科技(北京)有限公司 真空吸附加热盘及装置
CN115354307B (zh) * 2022-09-23 2023-08-18 拓荆科技股份有限公司 一种真空加热衬底设备
KR102650161B1 (ko) * 2023-01-05 2024-03-22 주식회사 미코세라믹스 세라믹 서셉터
US12241929B2 (en) 2023-04-21 2025-03-04 Taiwan Semiconductor Manufacturing Company, Ltd. Work press assembly for test handler
CN119361427B (zh) * 2024-09-27 2025-10-24 深圳市鹏新旭技术有限公司 半导体器件及其制备方法和半导体设备

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR200405748Y1 (ko) * 2005-10-27 2006-01-11 (주)쎄미시스코 다공질 실리콘을 이용한 이중 구조의 진공 척

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4183545A (en) * 1978-07-28 1980-01-15 Advanced Simiconductor Materials/America Rotary vacuum-chuck using no rotary union
JPH01134945A (ja) * 1987-11-19 1989-05-26 Tokyo Electron Ltd ウエハ保持装置
JP2908516B2 (ja) * 1990-05-07 1999-06-21 キヤノン株式会社 真空吸着式ウエハ保持装置
JPH06244269A (ja) * 1992-09-07 1994-09-02 Mitsubishi Electric Corp 半導体製造装置並びに半導体製造装置におけるウエハ真空チャック装置及びガスクリーニング方法及び窒化膜形成方法
US5695568A (en) * 1993-04-05 1997-12-09 Applied Materials, Inc. Chemical vapor deposition chamber
JPH0722496A (ja) * 1993-06-29 1995-01-24 Nikon Corp 基板の吸着保持装置
US5342068A (en) * 1993-08-26 1994-08-30 Texas Instruments Incorporated Laminar flow vacuum chuck
JPH10116760A (ja) * 1996-10-08 1998-05-06 Nikon Corp 露光装置及び基板保持装置
TW524873B (en) * 1997-07-11 2003-03-21 Applied Materials Inc Improved substrate supporting apparatus and processing chamber
US5989444A (en) * 1998-02-13 1999-11-23 Zywno; Marek Fluid bearings and vacuum chucks and methods for producing same
US6179924B1 (en) * 1998-04-28 2001-01-30 Applied Materials, Inc. Heater for use in substrate processing apparatus to deposit tungsten
US6241825B1 (en) * 1999-04-16 2001-06-05 Cutek Research Inc. Compliant wafer chuck
US6464795B1 (en) * 1999-05-21 2002-10-15 Applied Materials, Inc. Substrate support member for a processing chamber
JP2001144197A (ja) * 1999-11-11 2001-05-25 Fujitsu Ltd 半導体装置、半導体装置の製造方法及び試験方法
JP2002057209A (ja) * 2000-06-01 2002-02-22 Tokyo Electron Ltd 枚葉式処理装置および枚葉式処理方法
KR100523113B1 (ko) * 2000-06-01 2005-10-19 동경 엘렉트론 주식회사 반도체 처리용의 단일기판식 처리 장치
US6413321B1 (en) * 2000-12-07 2002-07-02 Applied Materials, Inc. Method and apparatus for reducing particle contamination on wafer backside during CVD process
KR20030001842A (ko) * 2001-06-28 2003-01-08 삼성전자 주식회사 이디에스 설비에 구비된 프로브 척
JP2004009165A (ja) * 2002-06-04 2004-01-15 Ngk Spark Plug Co Ltd 吸着用チャック
JP2004039978A (ja) * 2002-07-05 2004-02-05 Hirata Corp 基板保持装置
US20040016745A1 (en) * 2002-07-29 2004-01-29 Applied Materials, Inc. Method for achieving process uniformity by modifying thermal coupling between heater and substrate
DE10235482B3 (de) * 2002-08-02 2004-01-22 Süss Microtec Lithography Gmbh Vorrichtung zum Fixieren dünner und flexibler Substrate
JP4090313B2 (ja) * 2002-09-11 2008-05-28 大日本スクリーン製造株式会社 基板保持装置および基板処理装置
KR20040103648A (ko) * 2003-05-30 2004-12-09 삼성전자주식회사 반도체 기판지지 척 및 박막 증착 장치
JP2006005095A (ja) * 2004-06-16 2006-01-05 Ngk Insulators Ltd 基板加熱装置とその製造方法
JP2006310697A (ja) * 2005-05-02 2006-11-09 Dainippon Screen Mfg Co Ltd 吸着チャック
JP5019811B2 (ja) * 2006-07-20 2012-09-05 東京エレクトロン株式会社 静電吸着電極の補修方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR200405748Y1 (ko) * 2005-10-27 2006-01-11 (주)쎄미시스코 다공질 실리콘을 이용한 이중 구조의 진공 척

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016017920A1 (ko) * 2014-08-01 2016-02-04 (주)지원에프알에스 탄성링 및 탄성밴드를 이용하여 완충칼럼의 복원력을 향상시킨 기능성 신발물품

Also Published As

Publication number Publication date
KR101495513B1 (ko) 2015-03-03
JP2009033178A (ja) 2009-02-12
TWI491757B (zh) 2015-07-11
CN101358338A (zh) 2009-02-04
CN101358338B (zh) 2012-05-16
JP5798283B2 (ja) 2015-10-21
US20090031955A1 (en) 2009-02-05
TW200923118A (en) 2009-06-01
KR20110068955A (ko) 2011-06-22
SG149792A1 (en) 2009-02-27
KR20090013077A (ko) 2009-02-04
JP2014053645A (ja) 2014-03-20

Similar Documents

Publication Publication Date Title
KR101062595B1 (ko) 축대칭이며 균일한 열 프로파일의 진공 처킹 히터
CN113555270B (zh) 基座及基质加工设备
KR102825074B1 (ko) 통합된 베벨 퍼지 기능 및 후면을 갖는 웨이퍼 가열기
EP3254307B1 (en) Radially outward pad design for electrostatic chuck surface
KR20180063345A (ko) 반도체 제조의 웨이퍼 처리를 위한 고 생산성 pecvd 툴
KR102886824B1 (ko) 에지/중심 불균일성 완화를 위한 웨이퍼의 외측 주변부 근방 리세스된 영역들을 특징으로 하는 반도체 프로세싱 척들
KR102740388B1 (ko) 공간적 멀티-웨이퍼 프로세싱 툴을 위한 페데스탈 히터
US11978646B2 (en) Thermal chamber with improved thermal uniformity
US20250179633A1 (en) Pedestal thermal profile tuning using multiple heated zones and thermal void
US11610792B2 (en) Heated substrate support with thermal baffles
KR20240031376A (ko) 최소 rf 손실을 갖는 다중 존 히터
US20210287929A1 (en) Heater uniformity in substrate supports
TWI900579B (zh) 使用多個加熱區及熱孔隙的台座熱分布調校
JP7791817B2 (ja) 端部／中央部の不均一性を軽減するためにウエハの外周近傍に凹部を備えた半導体処理チャック
US20220002866A1 (en) Pedestal including vapor chamber for substrate processing systems

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

A107 Divisional application of patent
AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

J201 Request for trial against refusal decision
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0107 Divisional application

St.27 status event code: A-0-1-A10-A18-div-PA0107

St.27 status event code: A-0-1-A10-A16-div-PA0107

PJ0201 Trial against decision of rejection

St.27 status event code: A-3-3-V10-V11-apl-PJ0201

PB0901 Examination by re-examination before a trial

St.27 status event code: A-6-3-E10-E12-rex-PB0901

B701 Decision to grant
PB0701 Decision of registration after re-examination before a trial

St.27 status event code: A-3-4-F10-F13-rex-PB0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20140730

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20160629

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20170629

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20180801

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

FPAY Annual fee payment

Payment date: 20190801

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20230831

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20230831