JP5798283B2 - 軸対称及び均一熱プロファイルの真空チャック型ヒーター - Google Patents
軸対称及び均一熱プロファイルの真空チャック型ヒーター Download PDFInfo
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- JP5798283B2 JP5798283B2 JP2008196676A JP2008196676A JP5798283B2 JP 5798283 B2 JP5798283 B2 JP 5798283B2 JP 2008196676 A JP2008196676 A JP 2008196676A JP 2008196676 A JP2008196676 A JP 2008196676A JP 5798283 B2 JP5798283 B2 JP 5798283B2
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- Prior art keywords
- vacuum chuck
- heater
- circular groove
- grooves
- vacuum
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T279/00—Chucks or sockets
- Y10T279/11—Vacuum
Description
[0001]本発明の実施形態は、一般的に、半導体製造に使用される真空チャックに関し、より詳細には、改善された熱プロファイルを有する真空チャック型ヒーターに関する。
[0002]準常圧化学気相堆積(SACVD)処理は、減圧(又は準常圧)において実施される。減圧は、望ましくない気相反応を減ずる傾向にあり、それにより、ウエハに亘る膜均一性を改善することができる。多くの従来のSACVD処理は、膜及び/又は被覆の高い純度及び均一性、及び適合ステップカバレージを与えることができる。
Claims (14)
- 真空チャック型ヒーターであって、
基板を支持するための支持表面を有する本体と、
上記本体内に配設されたヒーターと、
上記支持表面に形成され、上記真空チャック型ヒーターの中心軸の周りに対称に配置された複数の軸対称溝と、を備え、上記複数の軸対称溝は、
上記真空チャック型ヒーターの中心軸の周りに配置された内側円形溝と、
上記内側円形溝の周りに同心で配置された外側円形溝と、
上記内側円形溝と上記外側円形溝とを接続する複数の半径方向溝と、を含み、
上記真空チャック型ヒーターは更に、上記本体を通して且つ上記内側円形溝内のみに形成され且つ上記複数の軸対称溝の非交差部分に配設され、動作中に上記複数の軸対称溝を真空システムに流体結合するための複数のチャッキング孔、を備え、上記複数のチャッキング孔は、上記真空チャック型ヒーターの中心軸の周りに対称に配置されている真空チャック型ヒーター。 - 上記複数の軸対称溝は、0.4318mmから0.5842mmの間の幅を有する、請求項1に記載の真空チャック型ヒーター。
- 上記複数の軸対称溝は、0.0635mmから0.0889mmの間の深さを有する、請求項1又は2に記載の真空チャック型ヒーター。
- 上記支持表面は、0.8128μm以下の表面粗さを有する、請求項1から3のいずれか1項に記載の真空チャック型ヒーター。
- 上記チャッキング孔は、0.508mmから1.524mmの間の直径を有する、請求項1から4のいずれか1項に記載の真空チャック型ヒーター。
- 上記チャッキング孔は、1.016mm以下の直径を有する、請求項1から4のいずれか1項に記載の真空チャック型ヒーター。
- 上記チャッキング孔は、上記複数の軸対称溝の何れの幅よりも小さな直径を有する、請求項1から6のいずれか1項に記載の真空チャック型ヒーター。
- 上記複数のチャッキング孔は、2つのチャッキング孔である、請求項1から7のいずれか1項に記載の真空チャック型ヒーター。
- 上記複数の軸対称溝は、上記内側円形溝と上記外側円形溝とを備え、上記内側円形溝と上記外側円形溝とを結合する4本の半径方向に延長する半径方向溝を有する、請求項1から8のいずれか1項に記載の真空チャック型ヒーター。
- 処理チャンバと、
上記処理チャンバ内に配設された、請求項1から9のいずれか1項に記載の真空チャック型ヒーターと、
を備える基板処理チャンバ。 - 上記真空チャック型ヒーターは、上記本体を支持し、上記複数のチャッキング孔を上記真空システムに流体結合する複数の開口を有するシャフトを更に備える、請求項10に記載の基板処理チャンバ。
- 上記真空システムは、上記シャフトの上記複数の開口を通って上記チャッキング孔に結合され、上記処理チャンバ内での基板の処理中に上記複数の軸対称溝内に真空圧を確立し且つ維持するための真空ポンプを備える、請求項11に記載の基板処理チャンバ。
- 真空チャック型ヒーターを製造するための方法において、
基板支持表面を有する本体と、上記本体内に配設されたヒーターとを準備するステップと、
上記支持表面に上記真空チャック型ヒーターの中心軸の周りに対称に配置された複数の軸対称溝を形成するステップと、を備え、上記複数の軸対称溝は、
上記真空チャック型ヒーターの中心軸の周りに配置された内側円形溝と、
上記内側円形溝の周りに同心で配置された外側円形溝と、
上記内側円形溝と上記外側円形溝とを接続する複数の半径方向溝と、を含み、
上記方法は更に、上記内側円形溝のみに、且つ複数の軸対称溝の非交差部分内に上記本体を通して複数のチャッキング孔を形成するステップ、を備え、上記複数のチャッキング孔は、上記真空チャック型ヒーターの中心軸の周りに対称に配置されている方法。 - 上記本体を準備するステップは、既存の溝を上記本体から除去する段階を含む、請求項13に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/830,589 | 2007-07-30 | ||
US11/830,589 US20090031955A1 (en) | 2007-07-30 | 2007-07-30 | Vacuum chucking heater of axisymmetrical and uniform thermal profile |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2013259036A Division JP2014053645A (ja) | 2007-07-30 | 2013-12-16 | 軸対称及び均一熱プロファイルの真空チャック型ヒーター |
Publications (3)
Publication Number | Publication Date |
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JP2009033178A JP2009033178A (ja) | 2009-02-12 |
JP2009033178A5 JP2009033178A5 (ja) | 2011-09-15 |
JP5798283B2 true JP5798283B2 (ja) | 2015-10-21 |
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JP2008196676A Active JP5798283B2 (ja) | 2007-07-30 | 2008-07-30 | 軸対称及び均一熱プロファイルの真空チャック型ヒーター |
JP2013259036A Withdrawn JP2014053645A (ja) | 2007-07-30 | 2013-12-16 | 軸対称及び均一熱プロファイルの真空チャック型ヒーター |
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JP2013259036A Withdrawn JP2014053645A (ja) | 2007-07-30 | 2013-12-16 | 軸対称及び均一熱プロファイルの真空チャック型ヒーター |
Country Status (6)
Country | Link |
---|---|
US (1) | US20090031955A1 (ja) |
JP (2) | JP5798283B2 (ja) |
KR (2) | KR101062595B1 (ja) |
CN (1) | CN101358338B (ja) |
SG (1) | SG149792A1 (ja) |
TW (1) | TWI491757B (ja) |
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2007
- 2007-07-30 US US11/830,589 patent/US20090031955A1/en not_active Abandoned
-
2008
- 2008-07-24 TW TW097128157A patent/TWI491757B/zh not_active IP Right Cessation
- 2008-07-28 SG SG200805597-2A patent/SG149792A1/en unknown
- 2008-07-29 KR KR1020080074005A patent/KR101062595B1/ko active IP Right Grant
- 2008-07-30 JP JP2008196676A patent/JP5798283B2/ja active Active
- 2008-07-30 CN CN2008101312151A patent/CN101358338B/zh active Active
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- 2011-04-28 KR KR1020110040280A patent/KR101495513B1/ko active IP Right Grant
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Also Published As
Publication number | Publication date |
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KR20090013077A (ko) | 2009-02-04 |
CN101358338B (zh) | 2012-05-16 |
JP2014053645A (ja) | 2014-03-20 |
KR101062595B1 (ko) | 2011-09-06 |
KR20110068955A (ko) | 2011-06-22 |
SG149792A1 (en) | 2009-02-27 |
TWI491757B (zh) | 2015-07-11 |
JP2009033178A (ja) | 2009-02-12 |
KR101495513B1 (ko) | 2015-03-03 |
TW200923118A (en) | 2009-06-01 |
US20090031955A1 (en) | 2009-02-05 |
CN101358338A (zh) | 2009-02-04 |
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