JP2022552237A - 背面パージが設けられ斜面パージが組み込まれたウエハヒータ - Google Patents
背面パージが設けられ斜面パージが組み込まれたウエハヒータ Download PDFInfo
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- 238000010926 purge Methods 0.000 title claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 73
- 238000000034 method Methods 0.000 claims abstract description 14
- 230000002093 peripheral effect Effects 0.000 claims abstract description 13
- 239000012530 fluid Substances 0.000 claims abstract description 8
- 238000010438 heat treatment Methods 0.000 claims description 82
- 238000005304 joining Methods 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims 4
- 238000004891 communication Methods 0.000 abstract description 7
- 235000012431 wafers Nutrition 0.000 description 17
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 13
- 238000012545 processing Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 6
- 238000013461 design Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
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- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 206010011878 Deafness Diseases 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
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- 238000010894 electron beam technology Methods 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Abstract
Description
Claims (20)
- 基板支持体であって、
外周縁と、本体厚さを画定する上面及び底面と、を有する単一部品の支持本体を形成する複数の接合された板と、
前記支持本体の前記上面に形成されたポケットであって、底面と、深さと、外周縁とを有するポケットと、
前記外周縁から或る一定の距離を置いて配置されたパージリングであって、前記上面に少なくとも1つの開口を含み、前記少なくとも1つの開口が、前記本体厚さの範囲内でパージガス線と流体連結している、パージリングと、
を備えた、基板支持体。 - 前記支持本体の前記底面に接続された中空シャフトをさらに備える、請求項1に記載の基板支持体。
- 静電チャックを形成するよう構成された、前記本体厚さの範囲内の前記上面から電極深さにある1つ以上の電極をさらに含む、請求項2に記載の基板支持体。
- 前記本体厚さの範囲内の、前記上面より下方の第1の深さにある主加熱要素をさらに含む、請求項2に記載の基板支持体。
- 前記本体厚さの範囲内の、前記第1の深さとは異なった前記上面から第2の深さにある内側ゾーン加熱要素と、
前記本体厚さの範囲内の、前記第1の深さとは異なった前記上面から第3の深さにある外側ゾーン加熱要素と、
をさらに含む、請求項4に記載の基板支持体。 - 前記中空シャフトを通って前記天板へと通された主加熱要素電力線、内側ゾーン加熱要素電力線、及び外側ゾーン加熱要素電力線をさらに含む、請求項5に記載の基板支持体。
- 前記パージリングより内側の前記上面に形成された複数のメサをさらに含む、請求項1に記載の基板支持体。
- 前記メサが、約10μmから約40μmまでの範囲内の高さを有する、請求項7に記載の基板支持体。
- 前記本体厚さの範囲内に1つ以上の温度センサをさらに含む、請求項1に記載の基板支持体。
- 基板支持体であって、
上面、及び底面を有する天板であって、パージリングが、前記上面に形成されており、前記天板を貫通して前記底面へと延びる複数の開口を含む、天板と、
上面、及び底面を有する底板であって、前記底板は、当該上面にチャネルが形成されており、前記チャネルが、前記天板を貫通して前記パージリングへと延びる前記複数の開口と位置合わせされており、前記底板の前記上面が前記天板の前記底面に接合されて、単一部品の支持本体を形成する、底板と、
を備えた、基板支持体。 - 前記天板は、
第1の天板であって、当該第1の天板を貫通する前記パージリングを有する第1の天板と、
第2の天板であって、当該第2の天板を貫通する複数の開口を有する第2の天板と、を含み、
前記複数の開口が、前記第1の天板の前記パージリングと位置合わせされており、前記第1の天板と前記第2の天板とが接合されて、単一部品の天板を形成する、請求項10に記載の基板支持体。 - 前記第2の天板は、当該第2の天板の上面に少なくとも1つの電極が形成されており、前記少なくとも1つの電極が、前記第1の天板と前記第2の天板との間に挟まれている、請求項11に記載の基板支持体。
- 前記底板は、前記上面に前記チャネルが形成された第1の底板と、第2の底板の上面に主加熱要素が形成された前記第2の底板と、を含み、
前記主加熱要素が、前記第1の底板と前記第2の底板との間に挟まれて、単一部品の底板を形成する、請求項10に記載の基板支持体。 - 前記底板が、第3の底板をさらに含み、前記第3の底板の上面には外側ゾーン加熱要素が形成されており、
前記第3の底板は、前記外側ゾーン加熱要素が前記第3の底板と前記第2の底板との間に挟まれて単一部品の底板が形成されるように、前記第2の底板の底面に接合される、請求項13に記載の基板支持体。 - 前記天板と前記底板とは、当該板同士を溶着させるために高温によって接合される、請求項14に記載の基板支持体。
- 基板支持体を製造する方法であって、
上面、及び底面を有する天板を形成することであって、パージリングが、前記上面に形成されており、前記天板を貫通して前記底面へと延びる複数の開口を含む、天板を形成することと、
上面、及び底面を有する底板を形成することであって、前記底板は、当該底板の外周縁から或る一定の距離を置いて当該上面にチャネルが形成されており、前記チャネルが、前記天板を貫通して前記パージリングへと延びる前記複数の開口と位置合わせされている、底板を形成することと、
前記底板の前記上面を前記天板の前記底面に接合して、単一部品の支持本体を形成することと、
を含む、方法。 - 前記天板を形成することが、第1の天板と第2の天板とを接合して単一部品を形成することを含み、
前記第1の天板が、当該第1の天板を貫通する前記パージリングを有し、
前記第2の天板が、当該第2の天板を貫通する複数の開口を有し、
前記複数の開口が、前記第1の天板の前記パージリング、前記第1の天板、及び前記第2の天板と位置合わせされている、請求項16に記載の方法。 - 前記第2の天板は、当該第2の天板の上面に少なくとも1つの電極が形成されており、前記少なくとも1つの電極が、前記第1の天板と前記第2の天板との間に挟まれている、請求項17に記載の方法。
- 前記底板を形成することが、第1の底板と第2の底板とを接合して単一部品を形成することを含み、
前記第1の底板は、前記上面に前記チャネルが形成されており、
前記第2の底板は、当該第2の底板の上面に主加熱要素が形成されており、
前記主加熱要素が、前記第1の底板と前記第2の底板との間に挟まれている、請求項18に記載の方法。 - 前記底板を形成することが、第3の底板を前記第2の底板に接合して、単一部品を形成することをさらに含み、
前記第3の底板は、当該第3の底板の上面に外側ゾーン加熱要素が形成されており、
前記第3の底板は、前記外側ゾーン加熱要素が前記第3の底板と前記第2の底板との間に挟まれるように、前記第2の底板の底面に接合される、請求項19に記載の方法。
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US201962914474P | 2019-10-12 | 2019-10-12 | |
US62/914,474 | 2019-10-12 | ||
PCT/US2020/054995 WO2021072200A1 (en) | 2019-10-12 | 2020-10-09 | Wafer heater with backside and integrated bevel purge |
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JP (1) | JP2022552237A (ja) |
KR (1) | KR20220079650A (ja) |
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JP7409535B1 (ja) | 2023-02-22 | 2024-01-09 | Toto株式会社 | 静電チャック及びその製造方法 |
JP7480876B1 (ja) | 2023-02-22 | 2024-05-10 | Toto株式会社 | 静電チャック及びその製造方法 |
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US20230113057A1 (en) | 2023-04-13 |
US11769684B2 (en) | 2023-09-26 |
TW202117918A (zh) | 2021-05-01 |
US20210111059A1 (en) | 2021-04-15 |
WO2021072200A1 (en) | 2021-04-15 |
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