JP2009504925A - ロウ付けプレートおよび抵抗ヒーターを有する基板サポート - Google Patents
ロウ付けプレートおよび抵抗ヒーターを有する基板サポート Download PDFInfo
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- JP2009504925A JP2009504925A JP2008527195A JP2008527195A JP2009504925A JP 2009504925 A JP2009504925 A JP 2009504925A JP 2008527195 A JP2008527195 A JP 2008527195A JP 2008527195 A JP2008527195 A JP 2008527195A JP 2009504925 A JP2009504925 A JP 2009504925A
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- 239000000758 substrate Substances 0.000 title claims abstract description 137
- 238000005219 brazing Methods 0.000 title claims abstract description 50
- 239000012790 adhesive layer Substances 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims description 33
- 230000002093 peripheral effect Effects 0.000 claims description 33
- 238000010438 heat treatment Methods 0.000 claims description 31
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 18
- 150000001875 compounds Chemical class 0.000 claims description 18
- 238000007789 sealing Methods 0.000 claims description 14
- 229910045601 alloy Inorganic materials 0.000 claims description 9
- 239000000956 alloy Substances 0.000 claims description 9
- 239000011133 lead Substances 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- 239000010935 stainless steel Substances 0.000 claims description 9
- 229910001220 stainless steel Inorganic materials 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- 239000011231 conductive filler Substances 0.000 claims description 6
- 230000004907 flux Effects 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 6
- 239000000843 powder Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 239000011135 tin Substances 0.000 claims description 6
- 229910052718 tin Inorganic materials 0.000 claims description 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 5
- 229910052749 magnesium Inorganic materials 0.000 claims description 5
- 239000011777 magnesium Substances 0.000 claims description 5
- 238000002844 melting Methods 0.000 claims description 5
- 230000008018 melting Effects 0.000 claims description 5
- 230000003746 surface roughness Effects 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 description 30
- 230000008569 process Effects 0.000 description 20
- 238000012545 processing Methods 0.000 description 18
- 238000012546 transfer Methods 0.000 description 17
- 238000000151 deposition Methods 0.000 description 15
- 230000008021 deposition Effects 0.000 description 15
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 9
- 239000010410 layer Substances 0.000 description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000010894 electron beam technology Methods 0.000 description 5
- 239000011888 foil Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 4
- 238000010926 purge Methods 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910001026 inconel Inorganic materials 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000009412 basement excavation Methods 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000005465 channeling Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910000697 metglas Inorganic materials 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45519—Inert gas curtains
- C23C16/45521—Inert gas curtains the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
- C23C16/463—Cooling of the substrate
- C23C16/466—Cooling of the substrate using thermal contact gas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
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- Organic Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
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Abstract
【選択図】 図1A
Description
Claims (40)
- (a)フィードスルーおよび上部表面を備える上部プレートであって、
(i)凹状ポケット間に分散された複数の外側突出メサ、
(ii)凹状溝のネットワーク、
(iii)前記凹状溝で終端し、かつフィードスルーに接続されている真空ポート、
(iv)もう1つのフィードスルーに接続されている複数のガスポート、
を備える、前記上部プレートと、
(b)前記上部プレートの前記フィードスルーに整列されている複数の中間フィードスルーを備える中間プレートであって、第1のロウ付け接着層によって前記上部プレートに接合されている、前記中間プレートと、
(c)前記中間プレートの前記中間フィードスルーに整列されている複数の底部フィードスルーを備える底部プレートであって、第2のロウ付け接着層によって前記中間プレートに接合されている、前記底部プレートと、
を備える基板サポート。 - 前記第1のロウ付け接着層または第2のロウ付け接着層が、アルミニウム、銅、インジウム、鉛、マグネシウム、ニッケル、錫、シリコンおよびこれらの合金のうち少なくとも1つを備えるロウ付け化合物を備える、請求項1に記載のサポート。
- 前記上部表面が中央部分および周辺部分を備えており、前記凹状溝が、前記真空ポートを含有する前記中央部分の円形溝から始まり、前記基板全体に放射状に延びて前記周辺部分の半円形溝に終端する複数の間隔のあいたアームを備える、請求項1に記載のサポート。
- 前記メサが実質的に円筒形である、請求項1に記載のサポート。
- 約10〜1000個のメサを備える、請求項4に記載のサポート。
- 前記メサを中心にシーリングリムをさらに備える、請求項1に記載のサポート。
- 前記メサおよびシーリングリムが各々、約20〜約100ミクロンの表面平坦さと、約4〜約20マイクロインチの表面仕上げとを有する、請求項6に記載のサポート。
- 前記凹状ポケットが、約2〜約80ミクロンの表面粗さを備える、請求項1に記載のサポート。
- 前記メサの前記上部表面からの前記凹状ポケットの深さが約25〜約250ミクロンである、請求項1に記載のサポート。
- 前記上部プレートの前記底部表面の溝に抵抗ヒーターをさらに備える、請求項1に記載のサポート。
- 前記抵抗ヒーターが、前記上部プレートの周辺領域を中心とした第1の抵抗加熱素子と、前記上部プレートの中央領域を中心とした第2の抵抗加熱素子とを備える、請求項10に記載のサポート。
- 前記第1および第2の抵抗加熱素子が各々2つの同心ループを備える、請求項11に記載のサポート。
- 各抵抗加熱素子が、チューブの絶縁性粉末によって囲まれたスパイラルコイルとして成形されている、請求項12に記載のサポート。
- 前記チューブが、前記上部プレートの前記溝の熱伝導性充填剤によって囲まれている、請求項13に記載のサポート。
- 基板サポートを形成するための方法であって、
(a)凹状溝のネットワーク間にある凹状ポケットから延びる複数の外側突出メサと、真空ポートおよび複数のガスポートに終端する上部フィードスルーとを有する上部表面を備える上部プレートを形成するステップと、
(b)複数の中間フィードスルーを備える中間プレートを形成するステップと、
(c)複数の底部フィードスルーを備える底部プレートを形成するステップと、
(d)前記上部、中間および底部プレートのうちの少なくとも2つの表面にロウ付け化合物を適用するステップと、
(e)前記上部、中間および底部フィードスルーが相互に整列されるように前記上部、中間および底部プレートを整列させることによってアセンブリを形成するステップと、
(f)前記ロウ付け化合物のフラックス温度に前記アセンブリを加熱するステップと、
(g)前記上部、中間および底部プレート間にロウ付け接着を形成するために前記アセンブリを冷却するステップと、
を備える方法。 - 前記上部、中間および底部プレートの溶融温度より低いフラックス温度を有するロウ付け化合物を適用するステップを備える、請求項15に記載の方法。
- 前記ロウ付け化合物が、アルミニウム、銅、インジウム、鉛、マグネシウム、ニッケル、錫、シリコンおよびこれらの合金のうちの少なくとも1つを備える、請求項15に記載の方法。
- 前記上部プレートの前記中央部分から前記周辺部分に放射状外側に延びる複数の間隔のあいた放射状アームを備える凹状溝を形成するステップを備える、請求項15に記載の方法。
- 円筒柱であるメサを形成するステップを備える、請求項15に記載の方法。
- 抵抗ヒーターを保持するために前記上部プレートの前記底部表面上に溝を形成するステップと、前記プレートを相互にロウ付けする前に前記溝に抵抗ヒーターを置くステップと、を備える、請求項15に記載の方法。
- (a)約2〜約80ミクロンの表面粗さを備える凹状ポケットを備える上部表面と、
(b)前記凹状ポケット全体に分散されている複数のメサと、前記凹状ポケットを囲むシーリングリムであって、前記メサおよびシーリングリムが各々、約20〜約100ミクロンの表面平坦さと、約4〜約20マイクロインチの表面仕上げとを有する複数のメサおよびシーリングリムと、
(c)前記上部表面上の凹状溝のネットワークと、
(d)間を通過するフィードスルーであって、前記上部表面上の真空ポートおよび複数のガスポートに接続されており、前記真空ポートが凹状溝に終端する、前記フィードスルーと、
を備える金属プレートを備える、基板サポート。 - (1)前記金属プレートの前記フィードスルーに整列されている複数の中間フィードスルーを備える中間プレートであって、第1のロウ付け接着層によって前記金属プレートに接合されている、前記中間プレートと、
(2)前記中間プレートの前記中間フィードスルーに整列されている複数の底部フィードスルーを備える底部プレートであって、第2のロウ付け接着層によって前記中間プレートに接合されている、前記底部プレートと、
をさらに備える、請求項21に記載のサポート。 - 前記第1のロウ付け接着層または第2のロウ付け接着層が、アルミニウム、銅、インジウム、鉛、マグネシウム、ニッケル、錫、シリコンおよびこれらの合金のうちの少なくとも1つを備えるロウ付け化合物を備える、請求項22に記載のサポート。
- 前記上部表面が中央部分および周辺部分を備えており、前記凹状溝が、前記真空ポートを含有する前記中央部分の円形溝から始まり、前記基板全体を放射状に延びて、前記周辺部分の半円形溝に終端する複数の間隔のあいた溝を備える、請求項21に記載のサポート。
- 前記メサが実質的に円筒形であり、その数が約10〜約1000個のメサに及ぶ、請求項21に記載のサポート。
- 前記金属プレートがステンレス鋼を備える、請求項21に記載のサポート。
- 前記メサの上部表面からの前記凹状ポケットの深さが約25〜約250ミクロンである、請求項21に記載のサポート。
- 前記金属プレートの前記底部表面の溝に抵抗ヒーターをさらに備えており、前記抵抗ヒーターが、前記金属プレートの周辺部分を中心とする第1の抵抗加熱素子と、前記金属プレートの中央部分を中心とする第2の抵抗加熱素子と、
を備える、請求項21に記載のサポート。 - 前記第1の抵抗加熱素子および第2の抵抗加熱素子が各々2つの同心ループを備える、請求項28に記載のサポート。
- 前記抵抗加熱素子が、チューブの絶縁性粉末によって囲まれているスパイラルコイルを備える、請求項28に記載のサポート。
- 前記チューブが、前記金属プレートの裏側の溝の熱伝導性充填剤によって囲まれている、請求項30に記載のサポート。
- (a)金属プレートであって、
(i)凹状ポケット、前記凹状ポケット全体に分散されている複数のメサ、前記凹状ポケットを囲むシーリングリム、凹状溝のネットワークを備える上部表面、
(ii)前記金属プレートを通過するフィードスルーであって、前記上部表面上の真空ポートおよび複数のガスポートに接続されており、前記真空ポートが凹状溝で終端するフィードスルー、
(iii)1つ以上の溝を有する底部表面、
を備える、前記金属プレートと、
(b)前記上部プレートの前記底部表面の溝における抵抗ヒーターであって、前記金属プレートの周辺領域を中心とする第1の抵抗加熱素子、前記金属プレートの中央領域を中心とする第2の抵抗加熱素子を備えており、各抵抗加熱素子がチューブの絶縁性粉末によって囲まれている、前記抵抗ヒーターと、
を備える、基板サポート。 - 前記第1の抵抗加熱素子および第2の抵抗加熱素子が各々、スパイラルコイルとして成形されている2つの同心ループを備える、請求項32に記載のサポート。
- 前記チューブが熱伝導性充填剤によって囲まれている、請求項32に記載のサポート。
- (1)前記金属プレートの前記フィードスルーに整列されている複数の中間フィードスルーを備える中間プレートであって、第1のロウ付け接着層によって前記金属プレートに接合されている、前記中間プレートと、
(2)前記中間プレートの前記中間フィードスルーに整列されている複数の底部フィードスルーを備える底部プレートであって、第2のロウ付け接着層によって前記中間プレートに接合されている、前記底部プレートと、
をさらに備える、請求項32に記載のサポート。 - 前記第1のロウ付け接着層または第2のロウ付け接着層が、アルミニウム、銅、インジウム、鉛、マグネシウム、ニッケル、錫、シリコンおよびこれらの合金のうちの少なくとも1つを備えるロウ付け化合物を備える、請求項35に記載のサポート。
- 前記上部表面が中央部分および周辺部分を備えており、前記凹状溝が、前記真空ポートを含有する前記中央部分の円形溝から始まり、前記基板全体を放射状に延びて前記周辺部分の半円形溝で終端する複数の間隔のあいた溝を備える、請求項32に記載のサポート。
- 前記メサを中心としたシーリングリムをさらに備えており、前記メサおよびシーリングリムが各々、約20〜約100ミクロンの表面平坦さと、約4〜約20マイクロインチの表面仕上げとを有する、請求項32に記載のサポート。
- 前記メサ間の前記凹状ポケットが約2〜約80ミクロンの表面粗さを備える、請求項32に記載のサポート。
- 前記メサの上部表面からの前記凹状ポケットの深さが約25〜約250ミクロンである、請求項32に記載のサポート。
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