SG149792A1 - Vacuum chucking heater of axisymmetrical and uniform thermal profile - Google Patents
Vacuum chucking heater of axisymmetrical and uniform thermal profileInfo
- Publication number
- SG149792A1 SG149792A1 SG200805597-2A SG2008055972A SG149792A1 SG 149792 A1 SG149792 A1 SG 149792A1 SG 2008055972 A SG2008055972 A SG 2008055972A SG 149792 A1 SG149792 A1 SG 149792A1
- Authority
- SG
- Singapore
- Prior art keywords
- axisymmetrical
- grooves
- thermal profile
- uniform thermal
- vacuum
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T279/00—Chucks or sockets
- Y10T279/11—Vacuum
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/830,589 US20090031955A1 (en) | 2007-07-30 | 2007-07-30 | Vacuum chucking heater of axisymmetrical and uniform thermal profile |
Publications (1)
Publication Number | Publication Date |
---|---|
SG149792A1 true SG149792A1 (en) | 2009-02-27 |
Family
ID=40330933
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200805597-2A SG149792A1 (en) | 2007-07-30 | 2008-07-28 | Vacuum chucking heater of axisymmetrical and uniform thermal profile |
Country Status (6)
Country | Link |
---|---|
US (1) | US20090031955A1 (ja) |
JP (2) | JP5798283B2 (ja) |
KR (2) | KR101062595B1 (ja) |
CN (1) | CN101358338B (ja) |
SG (1) | SG149792A1 (ja) |
TW (1) | TWI491757B (ja) |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8198567B2 (en) * | 2008-01-15 | 2012-06-12 | Applied Materials, Inc. | High temperature vacuum chuck assembly |
US8637794B2 (en) | 2009-10-21 | 2014-01-28 | Lam Research Corporation | Heating plate with planar heating zones for semiconductor processing |
US8791392B2 (en) | 2010-10-22 | 2014-07-29 | Lam Research Corporation | Methods of fault detection for multiplexed heater array |
US8546732B2 (en) * | 2010-11-10 | 2013-10-01 | Lam Research Corporation | Heating plate with planar heater zones for semiconductor processing |
DE102010055675A1 (de) * | 2010-12-22 | 2012-06-28 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Haltevorrichtung für Substrate sowie Verfahren zur Beschichtung eines Substrates |
US11171008B2 (en) | 2011-03-01 | 2021-11-09 | Applied Materials, Inc. | Abatement and strip process chamber in a dual load lock configuration |
US20130334199A1 (en) | 2011-03-01 | 2013-12-19 | Applied Materials, Inc. | Thin heated substrate support |
US10453694B2 (en) | 2011-03-01 | 2019-10-22 | Applied Materials, Inc. | Abatement and strip process chamber in a dual loadlock configuration |
CN203746815U (zh) | 2011-03-01 | 2014-07-30 | 应用材料公司 | 用于处理基板的腔室 |
US20120267423A1 (en) * | 2011-04-19 | 2012-10-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods and Apparatus for Thin Die Processing |
US10242890B2 (en) * | 2011-08-08 | 2019-03-26 | Applied Materials, Inc. | Substrate support with heater |
DE202012013639U1 (de) | 2011-12-01 | 2018-12-06 | solar-semi GmbH | Vorrichtung zum Bearbeiten eines Substrats |
CN106847737B (zh) | 2012-02-29 | 2020-11-13 | 应用材料公司 | 配置中的除污及剥除处理腔室 |
US9478447B2 (en) * | 2012-11-26 | 2016-10-25 | Applied Materials, Inc. | Substrate support with wire mesh plasma containment |
CN104637854B (zh) * | 2013-11-13 | 2018-12-07 | 沈阳新松机器人自动化股份有限公司 | 一种用于吸附硅片的吸盘 |
SG11201608905XA (en) | 2014-05-21 | 2016-12-29 | Applied Materials Inc | Thermal processing susceptor |
CN105161449A (zh) * | 2014-05-30 | 2015-12-16 | 盛美半导体设备(上海)有限公司 | 晶圆固定装置 |
KR101477660B1 (ko) * | 2014-08-01 | 2014-12-31 | (주)지원에프알에스 | 탄성링 및 탄성밴드를 이용하여 완충칼럼의 복원력을 향상시킨 기능성 신발물품 |
JP6394337B2 (ja) | 2014-12-04 | 2018-09-26 | 株式会社Sumco | 吸着チャック、面取り研磨装置、及び、シリコンウェーハの面取り研磨方法 |
US9728437B2 (en) | 2015-02-03 | 2017-08-08 | Applied Materials, Inc. | High temperature chuck for plasma processing systems |
US9691645B2 (en) | 2015-08-06 | 2017-06-27 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
JP6674800B2 (ja) * | 2016-03-07 | 2020-04-01 | 日本特殊陶業株式会社 | 基板支持装置 |
KR102523850B1 (ko) * | 2016-07-11 | 2023-04-21 | 주식회사 미코세라믹스 | 척 구조물 및 척 구조물을 갖는 칩 분리 장치 |
JP6847610B2 (ja) * | 2016-09-14 | 2021-03-24 | 株式会社Screenホールディングス | 熱処理装置 |
US10468290B2 (en) * | 2016-11-02 | 2019-11-05 | Ultratech, Inc. | Wafer chuck apparatus with micro-channel regions |
JP6829118B2 (ja) * | 2017-03-16 | 2021-02-10 | 株式会社日本製鋼所 | レーザ照射装置、レーザ照射方法、及び半導体装置の製造方法 |
KR102339350B1 (ko) * | 2017-04-03 | 2021-12-16 | 주식회사 미코세라믹스 | 세라믹 히터 |
JP7050912B2 (ja) * | 2017-10-19 | 2022-04-08 | エヴァテック・アーゲー | 基板を処理するための方法及び装置 |
US11361981B2 (en) * | 2018-05-02 | 2022-06-14 | Applied Materials, Inc. | Batch substrate support with warped substrate capability |
JP6959201B2 (ja) * | 2018-08-29 | 2021-11-02 | 日本碍子株式会社 | セラミックヒータ |
CN109280904A (zh) * | 2018-11-27 | 2019-01-29 | 中山德华芯片技术有限公司 | 一种应用于晶格失配结构外延生长的石墨盘 |
CN111490002B (zh) * | 2020-04-21 | 2023-06-27 | 錼创显示科技股份有限公司 | 载盘结构 |
CN115142050B (zh) * | 2022-09-05 | 2022-11-25 | 拓荆科技(北京)有限公司 | 真空吸附加热盘及装置 |
CN115354307B (zh) * | 2022-09-23 | 2023-08-18 | 拓荆科技股份有限公司 | 一种真空加热衬底设备 |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4183545A (en) * | 1978-07-28 | 1980-01-15 | Advanced Simiconductor Materials/America | Rotary vacuum-chuck using no rotary union |
JPH01134945A (ja) * | 1987-11-19 | 1989-05-26 | Tokyo Electron Ltd | ウエハ保持装置 |
JP2908516B2 (ja) * | 1990-05-07 | 1999-06-21 | キヤノン株式会社 | 真空吸着式ウエハ保持装置 |
JPH06244269A (ja) * | 1992-09-07 | 1994-09-02 | Mitsubishi Electric Corp | 半導体製造装置並びに半導体製造装置におけるウエハ真空チャック装置及びガスクリーニング方法及び窒化膜形成方法 |
US5800686A (en) * | 1993-04-05 | 1998-09-01 | Applied Materials, Inc. | Chemical vapor deposition chamber with substrate edge protection |
JPH0722496A (ja) * | 1993-06-29 | 1995-01-24 | Nikon Corp | 基板の吸着保持装置 |
US5342068A (en) * | 1993-08-26 | 1994-08-30 | Texas Instruments Incorporated | Laminar flow vacuum chuck |
JPH10116760A (ja) * | 1996-10-08 | 1998-05-06 | Nikon Corp | 露光装置及び基板保持装置 |
TW524873B (en) * | 1997-07-11 | 2003-03-21 | Applied Materials Inc | Improved substrate supporting apparatus and processing chamber |
US5989444A (en) * | 1998-02-13 | 1999-11-23 | Zywno; Marek | Fluid bearings and vacuum chucks and methods for producing same |
US6179924B1 (en) * | 1998-04-28 | 2001-01-30 | Applied Materials, Inc. | Heater for use in substrate processing apparatus to deposit tungsten |
US6241825B1 (en) * | 1999-04-16 | 2001-06-05 | Cutek Research Inc. | Compliant wafer chuck |
US6464795B1 (en) * | 1999-05-21 | 2002-10-15 | Applied Materials, Inc. | Substrate support member for a processing chamber |
JP2001144197A (ja) * | 1999-11-11 | 2001-05-25 | Fujitsu Ltd | 半導体装置、半導体装置の製造方法及び試験方法 |
JP2002057209A (ja) * | 2000-06-01 | 2002-02-22 | Tokyo Electron Ltd | 枚葉式処理装置および枚葉式処理方法 |
KR100523113B1 (ko) * | 2000-06-01 | 2005-10-19 | 동경 엘렉트론 주식회사 | 반도체 처리용의 단일기판식 처리 장치 |
US6413321B1 (en) * | 2000-12-07 | 2002-07-02 | Applied Materials, Inc. | Method and apparatus for reducing particle contamination on wafer backside during CVD process |
KR20030001842A (ko) * | 2001-06-28 | 2003-01-08 | 삼성전자 주식회사 | 이디에스 설비에 구비된 프로브 척 |
JP2004009165A (ja) * | 2002-06-04 | 2004-01-15 | Ngk Spark Plug Co Ltd | 吸着用チャック |
JP2004039978A (ja) * | 2002-07-05 | 2004-02-05 | Hirata Corp | 基板保持装置 |
US20040016745A1 (en) * | 2002-07-29 | 2004-01-29 | Applied Materials, Inc. | Method for achieving process uniformity by modifying thermal coupling between heater and substrate |
DE10235482B3 (de) * | 2002-08-02 | 2004-01-22 | Süss Microtec Lithography Gmbh | Vorrichtung zum Fixieren dünner und flexibler Substrate |
JP4090313B2 (ja) * | 2002-09-11 | 2008-05-28 | 大日本スクリーン製造株式会社 | 基板保持装置および基板処理装置 |
KR20040103648A (ko) * | 2003-05-30 | 2004-12-09 | 삼성전자주식회사 | 반도체 기판지지 척 및 박막 증착 장치 |
JP2006005095A (ja) * | 2004-06-16 | 2006-01-05 | Ngk Insulators Ltd | 基板加熱装置とその製造方法 |
JP2006310697A (ja) * | 2005-05-02 | 2006-11-09 | Dainippon Screen Mfg Co Ltd | 吸着チャック |
KR200405748Y1 (ko) * | 2005-10-27 | 2006-01-11 | (주)쎄미시스코 | 다공질 실리콘을 이용한 이중 구조의 진공 척 |
JP5019811B2 (ja) * | 2006-07-20 | 2012-09-05 | 東京エレクトロン株式会社 | 静電吸着電極の補修方法 |
-
2007
- 2007-07-30 US US11/830,589 patent/US20090031955A1/en not_active Abandoned
-
2008
- 2008-07-24 TW TW097128157A patent/TWI491757B/zh not_active IP Right Cessation
- 2008-07-28 SG SG200805597-2A patent/SG149792A1/en unknown
- 2008-07-29 KR KR1020080074005A patent/KR101062595B1/ko active IP Right Grant
- 2008-07-30 CN CN2008101312151A patent/CN101358338B/zh active Active
- 2008-07-30 JP JP2008196676A patent/JP5798283B2/ja active Active
-
2011
- 2011-04-28 KR KR1020110040280A patent/KR101495513B1/ko active IP Right Grant
-
2013
- 2013-12-16 JP JP2013259036A patent/JP2014053645A/ja not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
TW200923118A (en) | 2009-06-01 |
CN101358338A (zh) | 2009-02-04 |
KR101062595B1 (ko) | 2011-09-06 |
KR20090013077A (ko) | 2009-02-04 |
JP2014053645A (ja) | 2014-03-20 |
CN101358338B (zh) | 2012-05-16 |
KR101495513B1 (ko) | 2015-03-03 |
KR20110068955A (ko) | 2011-06-22 |
US20090031955A1 (en) | 2009-02-05 |
JP2009033178A (ja) | 2009-02-12 |
TWI491757B (zh) | 2015-07-11 |
JP5798283B2 (ja) | 2015-10-21 |
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