WO2009004977A1 - 基板処理装置、基板処理方法、並びに、記憶媒体 - Google Patents

基板処理装置、基板処理方法、並びに、記憶媒体 Download PDF

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Publication number
WO2009004977A1
WO2009004977A1 PCT/JP2008/061639 JP2008061639W WO2009004977A1 WO 2009004977 A1 WO2009004977 A1 WO 2009004977A1 JP 2008061639 W JP2008061639 W JP 2008061639W WO 2009004977 A1 WO2009004977 A1 WO 2009004977A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate treatment
semiconductor wafer
wafer
heat treatment
storage medium
Prior art date
Application number
PCT/JP2008/061639
Other languages
English (en)
French (fr)
Inventor
Koichi Sekido
Koji Maekawa
Kunio Takano
Original Assignee
Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Priority to CN2008800231140A priority Critical patent/CN101689528B/zh
Priority to KR1020097026923A priority patent/KR101131655B1/ko
Publication of WO2009004977A1 publication Critical patent/WO2009004977A1/ja
Priority to US12/651,718 priority patent/US20100168889A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67276—Production flow monitoring, e.g. for increasing throughput
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Automation & Control Theory (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

　熱処理モジュールにてウエハ（Ｗ）に対して複数回の熱処理を行うにあたり、支持部材の支持に起因したウエハ（Ｗ）の損傷を防止することのできる基板処理装置を提供する。本発明の基板処理装置は、半導体ウエハ（Ｗ）の処理レシピにおける処理条件と、半導体ウエハ（Ｗ）の向きと、を対応付けて設定するためのレシピ設定部を有する。このレシピ設定部を介して半導体ウエハ（Ｗ）の向きを設定し、位置合わせモジュールにおいて設定した向きになるように半導体ウエハ（Ｗ）の向きを合わせることができる。このような構成によれば、熱処理モジュールで行われる熱処理毎に、半導体ウエハの裏面のうちの支持部材（６０ａ，６０ｂ，６０ｃ）によって支持される部位（Ｒ）を変化させることができる。
PCT/JP2008/061639 2007-07-03 2008-06-26 基板処理装置、基板処理方法、並びに、記憶媒体 WO2009004977A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2008800231140A CN101689528B (zh) 2007-07-03 2008-06-26 基板处理装置和基板处理方法
KR1020097026923A KR101131655B1 (ko) 2007-07-03 2008-06-26 기판 처리 장치, 기판 처리 방법 및 기억 매체
US12/651,718 US20100168889A1 (en) 2007-07-03 2010-01-04 Substrate treatment apparatus, substrate treatment method and storage medium

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-175606 2007-07-03
JP2007175606A JP5003315B2 (ja) 2007-07-03 2007-07-03 基板処理装置及び基板処理方法並びに記憶媒体

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/651,718 Continuation US20100168889A1 (en) 2007-07-03 2010-01-04 Substrate treatment apparatus, substrate treatment method and storage medium

Publications (1)

Publication Number Publication Date
WO2009004977A1 true WO2009004977A1 (ja) 2009-01-08

Family

ID=40226024

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/061639 WO2009004977A1 (ja) 2007-07-03 2008-06-26 基板処理装置、基板処理方法、並びに、記憶媒体

Country Status (5)

Country Link
US (1) US20100168889A1 (ja)
JP (1) JP5003315B2 (ja)
KR (1) KR101131655B1 (ja)
CN (1) CN101689528B (ja)
WO (1) WO2009004977A1 (ja)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5208800B2 (ja) 2009-02-17 2013-06-12 東京エレクトロン株式会社 基板処理システム及び基板搬送方法
JP5060517B2 (ja) * 2009-06-24 2012-10-31 東京エレクトロン株式会社 インプリントシステム
JP5083339B2 (ja) * 2010-02-04 2012-11-28 東京エレクトロン株式会社 基板搬送装置及び基板搬送方法並びに記憶媒体
JP5582152B2 (ja) * 2012-02-03 2014-09-03 東京エレクトロン株式会社 基板搬送装置、基板搬送方法及び記憶媒体
JP6084479B2 (ja) * 2013-02-18 2017-02-22 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法、熱処理装置およびサセプター
JP2017050181A (ja) * 2015-09-02 2017-03-09 株式会社日立ハイテクサイエンス 搬送装置、処理装置、真空装置および荷電粒子ビーム装置
KR101675136B1 (ko) * 2015-09-23 2016-11-10 윤중호 급속 열처리 공정의 기판 위치 감지 장치와 오염 측정 장치 및 이를 구비한 열처리 장치
JP6777055B2 (ja) * 2017-01-11 2020-10-28 東京エレクトロン株式会社 基板処理装置
JP6838992B2 (ja) * 2017-02-21 2021-03-03 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置および熱処理方法
JP7259476B2 (ja) * 2019-03-27 2023-04-18 東京エレクトロン株式会社 アライメント装置、基板処理装置、アライメント方法及び基板処理方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10233368A (ja) * 1997-02-20 1998-09-02 Toshiba Ceramics Co Ltd 縦型ウエハボート
JPH11106287A (ja) * 1997-10-03 1999-04-20 Super Silicon Kenkyusho:Kk 半導体ウエハ処理方法及び装置
JP2000269223A (ja) * 1999-03-18 2000-09-29 Japan Radio Co Ltd 半導体結晶基板の支持装置
JP2002170865A (ja) * 2000-11-30 2002-06-14 Mitsubishi Materials Silicon Corp シリコンウェーハ熱処理用３点支持具の配置方法
JP2006019625A (ja) * 2004-07-05 2006-01-19 Renesas Technology Corp 熱処理装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5801945A (en) * 1996-06-28 1998-09-01 Lam Research Corporation Scheduling method for robotic manufacturing processes
US6232248B1 (en) * 1998-07-03 2001-05-15 Tokyo Electron Limited Single-substrate-heat-processing method for performing reformation and crystallization
KR100811964B1 (ko) * 2000-09-28 2008-03-10 동경 엘렉트론 주식회사 레지스트 패턴 형성장치 및 그 방법
JP3531672B2 (ja) * 2001-03-26 2004-05-31 東京エレクトロン株式会社 金属酸化膜の形成方法
JP2005064367A (ja) * 2003-08-19 2005-03-10 Hitachi Kokusai Electric Inc 熱処理装置、半導体装置の製造方法、基板の製造方法及び基板処理方法
JP2005294460A (ja) * 2004-03-31 2005-10-20 Tokyo Electron Ltd 塗布、現像装置
JP4906714B2 (ja) * 2005-03-29 2012-03-28 株式会社日立国際電気 基板処理装置、集中管理装置、基板処理装置の表示方法及び調整方法
US7957827B2 (en) * 2007-12-27 2011-06-07 United Microelectronics Corp. Method of controlling statuses of wafers

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10233368A (ja) * 1997-02-20 1998-09-02 Toshiba Ceramics Co Ltd 縦型ウエハボート
JPH11106287A (ja) * 1997-10-03 1999-04-20 Super Silicon Kenkyusho:Kk 半導体ウエハ処理方法及び装置
JP2000269223A (ja) * 1999-03-18 2000-09-29 Japan Radio Co Ltd 半導体結晶基板の支持装置
JP2002170865A (ja) * 2000-11-30 2002-06-14 Mitsubishi Materials Silicon Corp シリコンウェーハ熱処理用３点支持具の配置方法
JP2006019625A (ja) * 2004-07-05 2006-01-19 Renesas Technology Corp 熱処理装置

Also Published As

Publication number Publication date
CN101689528A (zh) 2010-03-31
KR101131655B1 (ko) 2012-03-28
JP5003315B2 (ja) 2012-08-15
JP2009016509A (ja) 2009-01-22
US20100168889A1 (en) 2010-07-01
CN101689528B (zh) 2011-08-31
KR20100018584A (ko) 2010-02-17

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