WO2009072426A1 - 真空処理装置及び基板処理方法 - Google Patents

真空処理装置及び基板処理方法 Download PDF

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Publication number
WO2009072426A1
WO2009072426A1 PCT/JP2008/071472 JP2008071472W WO2009072426A1 WO 2009072426 A1 WO2009072426 A1 WO 2009072426A1 JP 2008071472 W JP2008071472 W JP 2008071472W WO 2009072426 A1 WO2009072426 A1 WO 2009072426A1
Authority
WO
WIPO (PCT)
Prior art keywords
transfer path
processing apparatus
substrate transfer
substrate
vacuum
Prior art date
Application number
PCT/JP2008/071472
Other languages
English (en)
French (fr)
Inventor
Yoshikatsu Takagi
Shigemitsu Sato
Hiroki Oozora
Original Assignee
Ulvac, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac, Inc. filed Critical Ulvac, Inc.
Priority to KR1020107010326A priority Critical patent/KR101290884B1/ko
Priority to CN200880115649A priority patent/CN101855384A/zh
Priority to JP2009544641A priority patent/JP5419708B2/ja
Publication of WO2009072426A1 publication Critical patent/WO2009072426A1/ja

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J11/00—Gas-filled discharge tubes with alternating current induction of the discharge, e.g. alternating current plasma display panels [AC-PDP]; Gas-filled discharge tubes without any main electrode inside the vessel; Gas-filled discharge tubes with at least one main electrode outside the vessel
    • H01J11/20—Constructional details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67276—Production flow monitoring, e.g. for increasing throughput
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Automation & Control Theory (AREA)
  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

本発明の真空処理装置１は、被処理基板Ｓに対し所定の処理を行う処理室が直列に複数接続されてなる真空処理装置１において、前記真空処理装置には、真空処理装置の複数の処理室間にわたって設けられた第１の基板搬送路１５と、第１の基板搬送路１５に対して並列し、基板を搬送すると共に各処理室での所定の処理が行われる第２の基板搬送路１６とが設けられ、かつ、複数の処理室のうち、少なくとも２つの処理室に、基板を第１の基板搬送路及び第２の基板搬送路間で移動させるための搬送路変更手段１７が設けられている。
PCT/JP2008/071472 2007-12-06 2008-11-26 真空処理装置及び基板処理方法 WO2009072426A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020107010326A KR101290884B1 (ko) 2007-12-06 2008-11-26 진공 처리 장치 및 기판 처리 방법
CN200880115649A CN101855384A (zh) 2007-12-06 2008-11-26 真空处理装置及基板处理方法
JP2009544641A JP5419708B2 (ja) 2007-12-06 2008-11-26 真空処理装置及び基板処理方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-315332 2007-12-06
JP2007315332 2007-12-06

Publications (1)

Publication Number Publication Date
WO2009072426A1 true WO2009072426A1 (ja) 2009-06-11

Family

ID=40717608

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/071472 WO2009072426A1 (ja) 2007-12-06 2008-11-26 真空処理装置及び基板処理方法

Country Status (5)

Country Link
JP (1) JP5419708B2 (ja)
KR (1) KR101290884B1 (ja)
CN (2) CN103882402B (ja)
TW (1) TWI416647B (ja)
WO (1) WO2009072426A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105177514A (zh) * 2014-05-28 2015-12-23 佳能安内华股份有限公司 基板处理装置
WO2017071830A1 (en) * 2015-10-25 2017-05-04 Applied Materials, Inc. Apparatus and system for vacuum deposition on a substrate and method for vacuum deposition on a substrate
WO2022079311A1 (de) * 2020-10-16 2022-04-21 Fhr Anlagenbau Gmbh Verfahren und vorrichtung zum beschichten von einzelnen substraten in einer doppelzügigen/doppelstöckigen inline-vakuum-beschichtungsanlage
WO2022196063A1 (ja) * 2021-03-15 2022-09-22 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法及びプログラム

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8749053B2 (en) 2009-06-23 2014-06-10 Intevac, Inc. Plasma grid implant system for use in solar cell fabrications
JP5596853B2 (ja) * 2011-04-11 2014-09-24 株式会社アルバック 成膜装置
EP2777069A4 (en) 2011-11-08 2015-01-14 Intevac Inc SUBSTRATE PROCESSING SYSTEM AND METHOD
CN103422072B (zh) * 2012-05-16 2015-09-02 中微半导体设备(上海)有限公司 一种用于真空处理装置的载置台
MY178951A (en) 2012-12-19 2020-10-23 Intevac Inc Grid for plasma ion implant
KR102359244B1 (ko) 2016-11-21 2022-02-08 한국알박(주) 막 증착 방법
JP6902379B2 (ja) * 2017-03-31 2021-07-14 東京エレクトロン株式会社 処理システム
KR101958411B1 (ko) 2018-08-28 2019-03-14 한국알박(주) 막 증착 장치 및 방법

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05171441A (ja) * 1991-12-17 1993-07-09 Nippon Sheet Glass Co Ltd スパッタリング装置
JP2001135704A (ja) * 1999-11-09 2001-05-18 Sharp Corp 基板処理装置及び基板搬送用トレイの搬送制御方法
JP2005340425A (ja) * 2004-05-26 2005-12-08 Ulvac Japan Ltd 真空処理装置
JP2006045618A (ja) * 2004-08-04 2006-02-16 Ulvac Japan Ltd 真空処理装置
WO2007123032A1 (ja) * 2006-04-19 2007-11-01 Ulvac, Inc. 縦型基板搬送装置および成膜装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05171441A (ja) * 1991-12-17 1993-07-09 Nippon Sheet Glass Co Ltd スパッタリング装置
JP2001135704A (ja) * 1999-11-09 2001-05-18 Sharp Corp 基板処理装置及び基板搬送用トレイの搬送制御方法
JP2005340425A (ja) * 2004-05-26 2005-12-08 Ulvac Japan Ltd 真空処理装置
JP2006045618A (ja) * 2004-08-04 2006-02-16 Ulvac Japan Ltd 真空処理装置
WO2007123032A1 (ja) * 2006-04-19 2007-11-01 Ulvac, Inc. 縦型基板搬送装置および成膜装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105177514A (zh) * 2014-05-28 2015-12-23 佳能安内华股份有限公司 基板处理装置
WO2017071830A1 (en) * 2015-10-25 2017-05-04 Applied Materials, Inc. Apparatus and system for vacuum deposition on a substrate and method for vacuum deposition on a substrate
WO2022079311A1 (de) * 2020-10-16 2022-04-21 Fhr Anlagenbau Gmbh Verfahren und vorrichtung zum beschichten von einzelnen substraten in einer doppelzügigen/doppelstöckigen inline-vakuum-beschichtungsanlage
WO2022196063A1 (ja) * 2021-03-15 2022-09-22 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法及びプログラム

Also Published As

Publication number Publication date
JPWO2009072426A1 (ja) 2011-04-21
CN101855384A (zh) 2010-10-06
TW200933797A (en) 2009-08-01
CN103882402B (zh) 2016-06-01
CN103882402A (zh) 2014-06-25
KR20100063147A (ko) 2010-06-10
TWI416647B (zh) 2013-11-21
JP5419708B2 (ja) 2014-02-19
KR101290884B1 (ko) 2013-07-29

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