JP5792477B2 - 定電圧回路 - Google Patents
定電圧回路 Download PDFInfo
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- JP5792477B2 JP5792477B2 JP2011024971A JP2011024971A JP5792477B2 JP 5792477 B2 JP5792477 B2 JP 5792477B2 JP 2011024971 A JP2011024971 A JP 2011024971A JP 2011024971 A JP2011024971 A JP 2011024971A JP 5792477 B2 JP5792477 B2 JP 5792477B2
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- voltage
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- constant voltage
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- 239000003990 capacitor Substances 0.000 claims description 20
- 230000005669 field effect Effects 0.000 claims description 18
- 238000000034 method Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 101100219315 Arabidopsis thaliana CYP83A1 gene Proteins 0.000 description 7
- 101100269674 Mus musculus Alyref2 gene Proteins 0.000 description 7
- 101100140580 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) REF2 gene Proteins 0.000 description 7
- 101000806846 Homo sapiens DNA-(apurinic or apyrimidinic site) endonuclease Proteins 0.000 description 6
- 101000835083 Homo sapiens Tissue factor pathway inhibitor 2 Proteins 0.000 description 6
- 102100026134 Tissue factor pathway inhibitor 2 Human genes 0.000 description 6
- 238000009966 trimming Methods 0.000 description 6
- 230000004913 activation Effects 0.000 description 3
- 230000003111 delayed effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
- G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Power Engineering (AREA)
- Control Of Electrical Variables (AREA)
- Continuous-Control Power Sources That Use Transistors (AREA)
Description
2 第1の基準電圧発生部
3 第2の基準電圧発生部
4 定電圧生成部
5 制御部
6 外部電圧入力端子
7 スイッチ
8 モニターピン
201、202 NPN型BJT
203〜206、312、313、424〜427 抵抗
207 オペアンプ
208、209、304〜311、410〜423 N型FET
301〜303、401〜409 P型FET
314 可変抵抗
315、316、428、429 キャパシタ
430 EX-NOR回路
Claims (4)
- バイポーラトランジスタのバンドギャップ電圧を利用して基準電圧を生成する第1の基準電圧発生部と、
電界効果トランジスタを用いて基準電圧を生成する第2の基準電圧発生部と、
前記第1の基準電圧発生部の出力電圧、または前記第2の基準電圧発生部の出力電圧のいずれかを参照して定電圧を生成する定電圧生成部と、
前記第2の基準電圧発生部の出力電圧の補正に用いられる補正値が記憶された記憶部を有し、前記第1の基準電圧発生部、前記第2の基準電圧発生部、および前記定電圧生成部を制御する制御部と、を備え、
起動初期期間において前記第1の基準電圧発生部と前記第2の基準電圧発生部とを動作させ、前記第1の基準電圧発生部の出力電圧を参照して生成された前記定電圧生成部の出力電圧を用いて前記制御部を起動し、前記制御部は、前記記憶部に記憶された前記補正値を読み出して前記第2の基準電圧発生部の出力電圧を補正し、その後の動作期間において、前記定電圧生成部は前記第2の基準電圧発生部の出力電圧を参照して出力電圧を生成し、前記第1の基準電圧発生部を停止させる定電圧回路であって、
参照電圧が与えられる外部電圧入力端子と、前記制御部に与えられる電圧を前記定電圧生成部からの出力電圧と前記参照電圧とから選択するスイッチと、前記定電圧生成部からの出力電圧をモニター可能に構成されたモニターピンと、を備え、
前記補正値は、前記制御部に前記参照電圧が与えられた際の前記定電圧生成部の出力電圧が所定値となるように決定されたことを特徴とする定電圧回路。 - 前記記憶部は、書き換え可能に構成されたことを特徴とする請求項1に記載の定電圧回路。
- 前記第2の基準電圧発生部は、ダイオード接続された2つの電界効果トランジスタを備え、温度変化による一方の電界効果トランジスタの特性変動の影響を、他方の電界効果トランジスタにより相殺可能に構成されたことを特徴とする請求項1または請求項2に記載の定電圧回路。
- 前記第2の基準電圧発生部は、ゲートが互いに接続された2つの電界効果トランジスタと、一端が前記ゲートと接続された第1のキャパシタと、一端が前記第1のキャパシタの他端と接続された第2のキャパシタと、を備え、前記第2のキャパシタの他端に所定の電圧が与えられることにより、前記ゲートの急激な電圧変動を抑制可能に構成されたことを特徴とする請求項1から請求項3のいずれかに記載の定電圧回路。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011024971A JP5792477B2 (ja) | 2011-02-08 | 2011-02-08 | 定電圧回路 |
US13/353,213 US8552794B2 (en) | 2011-02-08 | 2012-01-18 | Constant-voltage circuit |
CN201210024785.7A CN102629148B (zh) | 2011-02-08 | 2012-02-06 | 恒压电路 |
KR1020120012274A KR101353329B1 (ko) | 2011-02-08 | 2012-02-07 | 정전압 회로 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011024971A JP5792477B2 (ja) | 2011-02-08 | 2011-02-08 | 定電圧回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012164195A JP2012164195A (ja) | 2012-08-30 |
JP5792477B2 true JP5792477B2 (ja) | 2015-10-14 |
Family
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Application Number | Title | Priority Date | Filing Date |
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JP2011024971A Active JP5792477B2 (ja) | 2011-02-08 | 2011-02-08 | 定電圧回路 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8552794B2 (ja) |
JP (1) | JP5792477B2 (ja) |
KR (1) | KR101353329B1 (ja) |
CN (1) | CN102629148B (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5735219B2 (ja) * | 2010-04-28 | 2015-06-17 | ラピスセミコンダクタ株式会社 | 半導体装置 |
WO2015103768A1 (en) * | 2014-01-10 | 2015-07-16 | Silicon Image, Inc. | Linear regulator with improved power supply ripple rejection |
CN105305810A (zh) * | 2014-05-29 | 2016-02-03 | 展讯通信(上海)有限公司 | 一种改进的电荷泵电路系统 |
JP6262082B2 (ja) * | 2014-06-09 | 2018-01-17 | 株式会社東芝 | Dc−dc変換器 |
KR20160118026A (ko) * | 2015-04-01 | 2016-10-11 | 에스케이하이닉스 주식회사 | 내부전압 생성회로 |
KR102393410B1 (ko) * | 2015-07-06 | 2022-05-03 | 삼성디스플레이 주식회사 | 전류 센서 및 그를 포함하는 유기전계발광 표시장치 |
CN112421952A (zh) | 2020-11-25 | 2021-02-26 | 北京奕斯伟计算技术有限公司 | 电压生成模组和电源管理芯片 |
US11892862B2 (en) * | 2021-08-30 | 2024-02-06 | Micron Technology, Inc. | Power supply circuit having voltage switching function |
Family Cites Families (20)
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KR0175319B1 (ko) * | 1991-03-27 | 1999-04-01 | 김광호 | 정전압 회로 |
JPH11288588A (ja) * | 1998-04-02 | 1999-10-19 | Mitsubishi Electric Corp | 半導体回路装置 |
JP3827066B2 (ja) * | 2001-02-21 | 2006-09-27 | シャープ株式会社 | 不揮発性半導体記憶装置およびその制御方法 |
JP2002328732A (ja) * | 2001-05-07 | 2002-11-15 | Texas Instr Japan Ltd | 基準電圧発生回路 |
DE60228051D1 (de) * | 2002-05-10 | 2008-09-18 | Texas Instruments Inc | LDO Regler mit Schlafmodus |
KR100933211B1 (ko) * | 2002-11-06 | 2009-12-22 | 삼성전자주식회사 | 기준전압 보정장치 및 보정방법 |
JP4287678B2 (ja) * | 2003-03-14 | 2009-07-01 | Okiセミコンダクタ株式会社 | 内部電源回路 |
KR100548558B1 (ko) * | 2003-06-16 | 2006-02-02 | 주식회사 하이닉스반도체 | 반도체 장치용 내부전압 발생기 |
JP2005128939A (ja) | 2003-10-27 | 2005-05-19 | Fujitsu Ltd | 半導体集積回路 |
JP4150326B2 (ja) * | 2003-11-12 | 2008-09-17 | 株式会社リコー | 定電圧回路 |
JP2006313438A (ja) | 2005-05-06 | 2006-11-16 | Mitsumi Electric Co Ltd | 基準電圧生成回路 |
TWI394367B (zh) * | 2006-02-18 | 2013-04-21 | Seiko Instr Inc | 帶隙定電壓電路 |
JP4954850B2 (ja) * | 2007-11-08 | 2012-06-20 | パナソニック株式会社 | 定電圧回路 |
TWI372379B (en) * | 2007-12-31 | 2012-09-11 | Au Optronics Corp | Liquid crystal display apparatus and bandgap reference circuit thereof |
JP2010049421A (ja) * | 2008-08-20 | 2010-03-04 | Sanyo Electric Co Ltd | 低電圧動作定電圧回路 |
JP2010049422A (ja) | 2008-08-20 | 2010-03-04 | Sanyo Electric Co Ltd | 低電圧動作定電圧回路 |
US8207787B2 (en) * | 2008-08-20 | 2012-06-26 | Semiconductor Components Industries, Llc | Low-voltage operation constant-voltage circuit |
JP5297143B2 (ja) * | 2008-10-10 | 2013-09-25 | ルネサスエレクトロニクス株式会社 | 半導体装置及びrfidタグチップ |
JP2010108419A (ja) | 2008-10-31 | 2010-05-13 | Toshiba Corp | 基準電圧発生回路およびそれを用いたレギュレータ |
JP5051105B2 (ja) * | 2008-11-21 | 2012-10-17 | 三菱電機株式会社 | リファレンス電圧発生回路及びバイアス回路 |
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2011
- 2011-02-08 JP JP2011024971A patent/JP5792477B2/ja active Active
-
2012
- 2012-01-18 US US13/353,213 patent/US8552794B2/en active Active
- 2012-02-06 CN CN201210024785.7A patent/CN102629148B/zh active Active
- 2012-02-07 KR KR1020120012274A patent/KR101353329B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
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KR101353329B1 (ko) | 2014-01-17 |
US20120200343A1 (en) | 2012-08-09 |
US8552794B2 (en) | 2013-10-08 |
CN102629148B (zh) | 2014-10-15 |
CN102629148A (zh) | 2012-08-08 |
JP2012164195A (ja) | 2012-08-30 |
KR20120090854A (ko) | 2012-08-17 |
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