JP5785103B2 - ヘテロ接合型電界効果トランジスタ用のエピタキシャルウエハ - Google Patents

ヘテロ接合型電界効果トランジスタ用のエピタキシャルウエハ Download PDF

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JP5785103B2
JP5785103B2 JP2012005945A JP2012005945A JP5785103B2 JP 5785103 B2 JP5785103 B2 JP 5785103B2 JP 2012005945 A JP2012005945 A JP 2012005945A JP 2012005945 A JP2012005945 A JP 2012005945A JP 5785103 B2 JP5785103 B2 JP 5785103B2
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superlattice
layer
buffer layer
layer structure
composition
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JP2013145821A5 (enExample
JP2013145821A (ja
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暢行 布袋田
暢行 布袋田
信明 寺口
信明 寺口
大輔 本田
大輔 本田
伸之 伊藤
伸之 伊藤
雅和 松林
雅和 松林
治彦 松笠
治彦 松笠
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Sharp Corp
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Sharp Corp
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Priority to JP2012005945A priority Critical patent/JP5785103B2/ja
Priority to US14/372,366 priority patent/US9111839B2/en
Priority to CN201380005634.XA priority patent/CN104054166A/zh
Priority to PCT/JP2013/050519 priority patent/WO2013108733A1/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H10D62/815—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW]
    • H10D62/8161—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices
    • H10D62/8162—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H01L21/02507—Alternating layers, e.g. superlattice
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H10D62/815—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW]
    • H10D62/8161—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices
    • H10D62/8162—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation
    • H10D62/8164—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation comprising only semiconductor materials 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
JP2012005945A 2012-01-16 2012-01-16 ヘテロ接合型電界効果トランジスタ用のエピタキシャルウエハ Active JP5785103B2 (ja)

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Application Number Priority Date Filing Date Title
JP2012005945A JP5785103B2 (ja) 2012-01-16 2012-01-16 ヘテロ接合型電界効果トランジスタ用のエピタキシャルウエハ
US14/372,366 US9111839B2 (en) 2012-01-16 2013-01-15 Epitaxial wafer for heterojunction type field effect transistor
CN201380005634.XA CN104054166A (zh) 2012-01-16 2013-01-15 异质结型场效应晶体管用的外延晶片
PCT/JP2013/050519 WO2013108733A1 (ja) 2012-01-16 2013-01-15 ヘテロ接合型電界効果トランジスタ用のエピタキシャルウエハ

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JP2012005945A JP5785103B2 (ja) 2012-01-16 2012-01-16 ヘテロ接合型電界効果トランジスタ用のエピタキシャルウエハ

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JP2013145821A JP2013145821A (ja) 2013-07-25
JP2013145821A5 JP2013145821A5 (enExample) 2014-09-04
JP5785103B2 true JP5785103B2 (ja) 2015-09-24

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US (1) US9111839B2 (enExample)
JP (1) JP5785103B2 (enExample)
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WO (1) WO2013108733A1 (enExample)

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JP2014220407A (ja) * 2013-05-09 2014-11-20 ローム株式会社 窒化物半導体素子
JP6121806B2 (ja) * 2013-06-07 2017-04-26 株式会社東芝 窒化物半導体ウェーハ、窒化物半導体素子及び窒化物半導体ウェーハの製造方法
TWI574407B (zh) * 2013-08-16 2017-03-11 晶元光電股份有限公司 半導體功率元件
CN103500763B (zh) * 2013-10-15 2017-03-15 苏州晶湛半导体有限公司 Ⅲ族氮化物半导体器件及其制造方法
GB2519338A (en) * 2013-10-17 2015-04-22 Nanogan Ltd Crack-free gallium nitride materials
JP2015103665A (ja) * 2013-11-25 2015-06-04 シャープ株式会社 窒化物半導体エピタキシャルウエハおよび窒化物半導体
KR102175320B1 (ko) * 2014-04-07 2020-11-06 엘지이노텍 주식회사 발광소자 및 이를 구비하는 조명 시스템
CN104037287B (zh) * 2014-06-10 2017-01-11 广州市众拓光电科技有限公司 生长在Si衬底上的LED外延片及其制备方法
CN104201196B (zh) * 2014-08-13 2017-07-28 中国电子科技集团公司第五十五研究所 表面无微裂纹的Si基III族氮化物外延片
JP2016100471A (ja) * 2014-11-21 2016-05-30 住友電気工業株式会社 半導体装置及び半導体装置の製造方法
US10109736B2 (en) * 2015-02-12 2018-10-23 Taiwan Semiconductor Manufacturing Co., Ltd. Superlattice buffer structure for gallium nitride transistors
JP2016207715A (ja) * 2015-04-16 2016-12-08 株式会社豊田中央研究所 半導体ウエハ及び半導体装置
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CN113506777B (zh) * 2015-11-02 2024-12-13 日本碍子株式会社 半导体元件用外延基板和半导体元件
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JP6859084B2 (ja) * 2016-11-30 2021-04-14 住友化学株式会社 半導体基板
JP6796467B2 (ja) * 2016-11-30 2020-12-09 住友化学株式会社 半導体基板
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JP6781095B2 (ja) 2017-03-31 2020-11-04 エア・ウォーター株式会社 化合物半導体基板
CN112820773B (zh) * 2019-11-18 2024-05-07 联华电子股份有限公司 一种高电子迁移率晶体管
CN111009599B (zh) * 2020-01-02 2025-04-29 江西乾照光电有限公司 一种led外延片及其制备方法
CN112768512A (zh) * 2021-01-13 2021-05-07 西安电子科技大学 基于凹槽阳极结构的AlGaN基双沟道肖特基二极管及制备方法
CN114823889A (zh) * 2021-01-27 2022-07-29 中国科学院微电子研究所 一种半导体功率器件及其制备方法
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US20140353587A1 (en) 2014-12-04
US9111839B2 (en) 2015-08-18
JP2013145821A (ja) 2013-07-25
CN104054166A (zh) 2014-09-17

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