CN104054166A - 异质结型场效应晶体管用的外延晶片 - Google Patents

异质结型场效应晶体管用的外延晶片 Download PDF

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Publication number
CN104054166A
CN104054166A CN201380005634.XA CN201380005634A CN104054166A CN 104054166 A CN104054166 A CN 104054166A CN 201380005634 A CN201380005634 A CN 201380005634A CN 104054166 A CN104054166 A CN 104054166A
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layer
superlattice
buffer layer
composition
layer structure
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Chinese (zh)
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布袋田畅行
寺口信明
本田大辅
伊藤伸之
松林雅和
松笠治彦
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Sharp Corp
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Sharp Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H10D62/815—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW]
    • H10D62/8161—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices
    • H10D62/8162—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H01L21/02507—Alternating layers, e.g. superlattice
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H10D62/815—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW]
    • H10D62/8161—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices
    • H10D62/8162—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation
    • H10D62/8164—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation comprising only semiconductor materials 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
CN201380005634.XA 2012-01-16 2013-01-15 异质结型场效应晶体管用的外延晶片 Pending CN104054166A (zh)

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JP2012-005945 2012-01-16
JP2012005945A JP5785103B2 (ja) 2012-01-16 2012-01-16 ヘテロ接合型電界効果トランジスタ用のエピタキシャルウエハ
PCT/JP2013/050519 WO2013108733A1 (ja) 2012-01-16 2013-01-15 ヘテロ接合型電界効果トランジスタ用のエピタキシャルウエハ

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US (1) US9111839B2 (enExample)
JP (1) JP5785103B2 (enExample)
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CN106098749A (zh) * 2016-06-30 2016-11-09 中国电子科技集团公司第五十五研究所 一种硅衬底上AlGaN/GaN异质结构及其生长方法
CN106449409A (zh) * 2015-08-13 2017-02-22 格罗方德半导体公司 具有多层iii‑v族异质结构的半导体结构
CN108352327A (zh) * 2015-11-02 2018-07-31 日本碍子株式会社 半导体元件用外延基板、半导体元件和半导体元件用外延基板的制造方法
CN110024082A (zh) * 2016-11-30 2019-07-16 住友化学株式会社 半导体衬底
CN111009599A (zh) * 2020-01-02 2020-04-14 江西乾照光电有限公司 一种led外延片及其制备方法
CN112768512A (zh) * 2021-01-13 2021-05-07 西安电子科技大学 基于凹槽阳极结构的AlGaN基双沟道肖特基二极管及制备方法
CN112820773A (zh) * 2019-11-18 2021-05-18 联华电子股份有限公司 一种高电子迁移率晶体管
CN113380930A (zh) * 2021-06-11 2021-09-10 厦门士兰明镓化合物半导体有限公司 深紫外发光二极管及其制造方法
US11316018B2 (en) 2017-03-31 2022-04-26 Air Water Inc. Compound semiconductor substrate including electron transition layer and barrier layer

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JP2014220407A (ja) * 2013-05-09 2014-11-20 ローム株式会社 窒化物半導体素子
JP6121806B2 (ja) * 2013-06-07 2017-04-26 株式会社東芝 窒化物半導体ウェーハ、窒化物半導体素子及び窒化物半導体ウェーハの製造方法
TWI574407B (zh) * 2013-08-16 2017-03-11 晶元光電股份有限公司 半導體功率元件
CN103500763B (zh) * 2013-10-15 2017-03-15 苏州晶湛半导体有限公司 Ⅲ族氮化物半导体器件及其制造方法
GB2519338A (en) * 2013-10-17 2015-04-22 Nanogan Ltd Crack-free gallium nitride materials
JP2015103665A (ja) * 2013-11-25 2015-06-04 シャープ株式会社 窒化物半導体エピタキシャルウエハおよび窒化物半導体
KR102175320B1 (ko) * 2014-04-07 2020-11-06 엘지이노텍 주식회사 발광소자 및 이를 구비하는 조명 시스템
CN104037287B (zh) * 2014-06-10 2017-01-11 广州市众拓光电科技有限公司 生长在Si衬底上的LED外延片及其制备方法
CN104201196B (zh) * 2014-08-13 2017-07-28 中国电子科技集团公司第五十五研究所 表面无微裂纹的Si基III族氮化物外延片
JP2016100471A (ja) * 2014-11-21 2016-05-30 住友電気工業株式会社 半導体装置及び半導体装置の製造方法
US10109736B2 (en) * 2015-02-12 2018-10-23 Taiwan Semiconductor Manufacturing Co., Ltd. Superlattice buffer structure for gallium nitride transistors
JP2016207715A (ja) * 2015-04-16 2016-12-08 株式会社豊田中央研究所 半導体ウエハ及び半導体装置
US20160359004A1 (en) * 2015-06-03 2016-12-08 Veeco Instruments, Inc. Stress control for heteroepitaxy
US10586701B2 (en) * 2016-02-26 2020-03-10 Sanken Electric Co., Ltd. Semiconductor base having a composition graded buffer layer stack
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JP6796467B2 (ja) * 2016-11-30 2020-12-09 住友化学株式会社 半導体基板
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CN114823889A (zh) * 2021-01-27 2022-07-29 中国科学院微电子研究所 一种半导体功率器件及其制备方法
CN114361302B (zh) * 2022-03-17 2022-06-17 江西兆驰半导体有限公司 一种发光二极管外延片、发光二极管缓冲层及其制备方法

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CN102318049A (zh) * 2008-12-15 2012-01-11 同和电子科技有限公司 电子器件用外延基板及其生产方法
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Cited By (11)

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Publication number Priority date Publication date Assignee Title
CN106449409A (zh) * 2015-08-13 2017-02-22 格罗方德半导体公司 具有多层iii‑v族异质结构的半导体结构
CN106449409B (zh) * 2015-08-13 2019-10-08 格罗方德半导体公司 具有多层iii-v族异质结构的半导体结构
CN108352327A (zh) * 2015-11-02 2018-07-31 日本碍子株式会社 半导体元件用外延基板、半导体元件和半导体元件用外延基板的制造方法
CN106098749A (zh) * 2016-06-30 2016-11-09 中国电子科技集团公司第五十五研究所 一种硅衬底上AlGaN/GaN异质结构及其生长方法
CN110024082A (zh) * 2016-11-30 2019-07-16 住友化学株式会社 半导体衬底
US11316018B2 (en) 2017-03-31 2022-04-26 Air Water Inc. Compound semiconductor substrate including electron transition layer and barrier layer
CN112820773A (zh) * 2019-11-18 2021-05-18 联华电子股份有限公司 一种高电子迁移率晶体管
CN112820773B (zh) * 2019-11-18 2024-05-07 联华电子股份有限公司 一种高电子迁移率晶体管
CN111009599A (zh) * 2020-01-02 2020-04-14 江西乾照光电有限公司 一种led外延片及其制备方法
CN112768512A (zh) * 2021-01-13 2021-05-07 西安电子科技大学 基于凹槽阳极结构的AlGaN基双沟道肖特基二极管及制备方法
CN113380930A (zh) * 2021-06-11 2021-09-10 厦门士兰明镓化合物半导体有限公司 深紫外发光二极管及其制造方法

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WO2013108733A1 (ja) 2013-07-25
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JP2013145821A (ja) 2013-07-25

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Application publication date: 20140917