JP2013145821A - ヘテロ接合型電界効果トランジスタ用のエピタキシャルウエハ - Google Patents
ヘテロ接合型電界効果トランジスタ用のエピタキシャルウエハ Download PDFInfo
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- 230000005669 field effect Effects 0.000 title claims description 4
- 239000000872 buffer Substances 0.000 claims abstract description 71
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 239000000470 constituent Substances 0.000 claims abstract description 29
- 239000004065 semiconductor Substances 0.000 claims abstract description 23
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 19
- 150000004767 nitrides Chemical class 0.000 claims abstract description 19
- 230000007423 decrease Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 47
- 230000000052 comparative effect Effects 0.000 description 14
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 11
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 239000012495 reaction gas Substances 0.000 description 4
- 238000005136 cathodoluminescence Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Abstract
【解決手段】ヘテロ接合型FET用エピタキシャルウエハは、Si基板1上に順次積層されたAlN下地層2、段階的組成傾斜バッファ層構造6、超格子バッファ層構造7、GaNチャネル層8、および窒化物半導体の電子供給層9を含み、段階的組成傾斜バッファ層構造6はAl組成比が順次低減されるように積層された複数のAlGaNバッファ層を含み、その最上層はAlxGa1-xN(0<x)の組成を有し、超格子バッファ層構造7内ではAlyGa1−yN(y≦1)超格子構成層とAlzGa1−zN(0<z<y)超格子構成層のいずれかから開始してそれらが交互に複数回積層されており、AlxGa1-xNバッファ層とAlzGa1−zN超格子構成層とがx−0.05≦z≦x+0.05の条件を満たす。
【選択図】図1
Description
図1は、本発明の実施例1によるヘテロ接合型FET用エピタキシャルウエハの積層構造を示す模式的断面図である。
図2は、比較例1によるヘテロ接合型FET用のエピタキシャルウエハの積層構造を示す模式的断面図である。
図3は、比較例2によるヘテロ接合型FET用のエピタキシャルウエハの積層構造を示す模式的断面図である。
以上のような実施例および比較例によるエピタキシャルウエハにおいて反りと刃状転位密度が評価された。
刃状転位密度=(FWHM2/9.0)/3.189Å2 ・・・(1)
ここで、FWHMと刃状転位密度とは、カソードルミネッセンス(CL)による観察によって関係付けられた。式(1)中の数値「9.0」は、FWHMと刃状転位密度とをCL観察に基づいて関係付けるフィティングパラメータであり、3.189ÅはGaN結晶中の刃状転位のバーガスベクトルの長さである。
Claims (2)
- ヘテロ接合型電界効果トランジスタ用のエピタキシャルウエハであって、
Si基板上に順次積層されたAlN下地層、段階的組成傾斜バッファ層構造、超格子バッファ層構造、GaNチャネル層、および窒化物系半導体の電子供給層を含み、
前記段階的組成傾斜バッファ層構造は、Al組成比が段階的に順次低減されるように積層された複数のAlGaNバッファ層を含み、最上のAlGaNバッファ層はAlxGa1-xN(0<x)の組成を有し、
前記超格子バッファ層構造内ではAlyGa1−yN(y≦1)超格子構成層とAlzGa1−zN(0<z<y)超格子構成層のいずれかから開始してそれらの超格子構成層が交互に複数回積層されており、
前記AlxGa1-xNバッファ層とAlzGa1−zN超格子構成層とがほぼ同じAl組成比を有していてx−0.05≦z≦x+0.05の条件を満たすことを特徴とするエピタキシャルウエハ。 - 前記超格子バッファ層構造内の最下の超格子構成層がAlNの組成を有することを特徴とする請求項1に記載のエピタキシャルウエハ。
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JP2012005945A JP5785103B2 (ja) | 2012-01-16 | 2012-01-16 | ヘテロ接合型電界効果トランジスタ用のエピタキシャルウエハ |
PCT/JP2013/050519 WO2013108733A1 (ja) | 2012-01-16 | 2013-01-15 | ヘテロ接合型電界効果トランジスタ用のエピタキシャルウエハ |
US14/372,366 US9111839B2 (en) | 2012-01-16 | 2013-01-15 | Epitaxial wafer for heterojunction type field effect transistor |
CN201380005634.XA CN104054166A (zh) | 2012-01-16 | 2013-01-15 | 异质结型场效应晶体管用的外延晶片 |
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JP5785103B2 (ja) | 2015-09-24 |
WO2013108733A1 (ja) | 2013-07-25 |
US9111839B2 (en) | 2015-08-18 |
US20140353587A1 (en) | 2014-12-04 |
CN104054166A (zh) | 2014-09-17 |
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