JP5762501B2 - 電極構造体、コンデンサおよび電池 - Google Patents
電極構造体、コンデンサおよび電池 Download PDFInfo
- Publication number
- JP5762501B2 JP5762501B2 JP2013213883A JP2013213883A JP5762501B2 JP 5762501 B2 JP5762501 B2 JP 5762501B2 JP 2013213883 A JP2013213883 A JP 2013213883A JP 2013213883 A JP2013213883 A JP 2013213883A JP 5762501 B2 JP5762501 B2 JP 5762501B2
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- Prior art keywords
- dielectric
- aluminum
- layer
- electrode structure
- aluminum material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000003990 capacitor Substances 0.000 title claims description 20
- 239000010410 layer Substances 0.000 claims description 159
- 229910052782 aluminium Inorganic materials 0.000 claims description 129
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 128
- 239000000463 material Substances 0.000 claims description 95
- 239000002245 particle Substances 0.000 claims description 75
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- 239000012044 organic layer Substances 0.000 claims description 20
- 239000000126 substance Substances 0.000 claims description 19
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 15
- 229910052799 carbon Inorganic materials 0.000 claims description 14
- 239000010936 titanium Substances 0.000 claims description 10
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- CAVCGVPGBKGDTG-UHFFFAOYSA-N alumanylidynemethyl(alumanylidynemethylalumanylidenemethylidene)alumane Chemical compound [Al]#C[Al]=C=[Al]C#[Al] CAVCGVPGBKGDTG-UHFFFAOYSA-N 0.000 claims description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 6
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 5
- 229910052735 hafnium Inorganic materials 0.000 claims description 5
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052758 niobium Inorganic materials 0.000 claims description 5
- 239000010955 niobium Substances 0.000 claims description 5
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 5
- 229910052726 zirconium Inorganic materials 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 description 53
- 238000000034 method Methods 0.000 description 52
- 239000000203 mixture Substances 0.000 description 50
- 239000011230 binding agent Substances 0.000 description 29
- 239000011888 foil Substances 0.000 description 29
- 229930195733 hydrocarbon Natural products 0.000 description 26
- 150000002430 hydrocarbons Chemical class 0.000 description 26
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 26
- 239000004215 Carbon black (E152) Substances 0.000 description 20
- 239000000758 substrate Substances 0.000 description 19
- 239000012298 atmosphere Substances 0.000 description 18
- 238000000576 coating method Methods 0.000 description 16
- 239000011248 coating agent Substances 0.000 description 14
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 12
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 12
- 239000007789 gas Substances 0.000 description 11
- 230000008569 process Effects 0.000 description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 10
- 238000002156 mixing Methods 0.000 description 10
- 229910052760 oxygen Inorganic materials 0.000 description 10
- 239000001301 oxygen Substances 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 229920005989 resin Polymers 0.000 description 9
- 239000011347 resin Substances 0.000 description 9
- 239000000243 solution Substances 0.000 description 9
- 239000002904 solvent Substances 0.000 description 9
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 8
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 8
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 8
- 238000001069 Raman spectroscopy Methods 0.000 description 7
- 239000007788 liquid Substances 0.000 description 7
- 239000010408 film Substances 0.000 description 6
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000000634 powder X-ray diffraction Methods 0.000 description 5
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 4
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 4
- -1 polyethylene Polymers 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- 239000001294 propane Substances 0.000 description 4
- 238000003980 solgel method Methods 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- 238000001237 Raman spectrum Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000010406 cathode material Substances 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- RGSFGYAAUTVSQA-UHFFFAOYSA-N Cyclopentane Chemical compound C1CCCC1 RGSFGYAAUTVSQA-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 239000010405 anode material Substances 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000005097 cold rolling Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000008151 electrolyte solution Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 125000002534 ethynyl group Chemical class [H]C#C* 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000009776 industrial production Methods 0.000 description 2
- NNPPMTNAJDCUHE-UHFFFAOYSA-N isobutane Chemical compound CC(C)C NNPPMTNAJDCUHE-UHFFFAOYSA-N 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- UAEPNZWRGJTJPN-UHFFFAOYSA-N methylcyclohexane Chemical compound CC1CCCCC1 UAEPNZWRGJTJPN-UHFFFAOYSA-N 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 2
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 2
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000001993 wax Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 description 1
- FLDCSPABIQBYKP-UHFFFAOYSA-N 5-chloro-1,2-dimethylbenzimidazole Chemical compound ClC1=CC=C2N(C)C(C)=NC2=C1 FLDCSPABIQBYKP-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- 239000001741 Ammonium adipate Substances 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- IMROMDMJAWUWLK-UHFFFAOYSA-N Ethenol Chemical compound OC=C IMROMDMJAWUWLK-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- 239000000020 Nitrocellulose Substances 0.000 description 1
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- 235000008331 Pinus X rigitaeda Nutrition 0.000 description 1
- 235000011613 Pinus brutia Nutrition 0.000 description 1
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
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- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
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- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/002—Inhomogeneous material in general
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
- B05D5/12—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain a coating with specific electrical properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/0029—Processes of manufacture
- H01G9/0032—Processes of manufacture formation of the dielectric layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/008—Terminals
- H01G9/012—Terminals specially adapted for solid capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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Description
この発明の一つの実施の形態として、誘電体層が形成される基材としてのアルミニウム材は、特に限定されず、純アルミニウムまたはアルミニウム合金の箔を用いることができる。このようなアルミニウム材は、アルミニウム純度が「JIS H 2111」に記載された方法に準じて測定された値で98質量%以上のものが好ましい。本発明で用いられるアルミニウム材は、その組成として、鉛(Pb)、珪素(Si)、鉄(Fe)、銅(Cu)、マンガン(Mn)、マグネシウム(Mg)、クロム(Cr)、亜鉛(Zn)、チタン(Ti)、バナジウム(V)、ガリウム(Ga)、ニッケル(Ni)およびホウ素(B)の少なくとも1種の合金元素を必要範囲内において添加したアルミニウム合金、または、上記の不可避的不純物元素の含有量を限定したアルミニウムも含む。アルミニウム材の厚みは、特に限定されないが、一般的には5μm以上200μm以下の範囲内とするのが好ましい。
誘電体層は、バルブ金属を含む誘電体粒子を含み、この誘電体粒子の表面の少なくとも一部には有機物層が形成されている。この発明に従った電極構造体においては、アルミニウム材と誘電体層との密着性、および、誘電体層間の密着性を向上させることができるので、誘電体層の厚みを、0.5μm以上にすることができる。なお、誘電体層の厚みの上限値は、特に限定されるものではないが、工業的生産を考慮すると、20μm以下であることが好ましい。以下、この誘電体層の構成について説明する。
誘電体粒子に含まれるバルブ金属は、特に限定されず、マグネシウム、トリウム、カドミウム、タングステン、錫、鉄、銀、シリコン、タンタル、チタン、ハフニウム、アルミニウム、ジルコニウムおよびニオブ等が挙げられるが、特に、チタン、タンタル、ハフニウム、ジルコニウムまたはニオブが好適に使用される。誘電体粒子としては、上述のバルブ金属を含むものであれば特に限定されないが、具体的には、酸化チタン、酸化タンタル、酸化ハフニウム、酸化ジルコニウム、酸化ニオブ等の粒子を挙げることができる。この中でも誘電体粒子として酸化チタンを使用することが比誘電率の点で好ましい。
有機物層は、後述する、混合物層形成工程と加熱工程を行なうことにより、誘電体粒子の表面に形成される。
本発明の電極構造体は、基材となるアルミニウム材と誘電体層との間でアルミニウム材の表面の少なくとも一部の領域に形成された、アルミニウムと炭素を含む介在層をさらに備える。
本発明の電極構造体の製造方法は、バルブ金属を含む誘電体粒子とバインダーとの混合物層をアルミニウム材の表面上に形成する混合物層形成工程と、その後、炭化水素含有物質を含む空間に混合物層が形成されたアルミニウム材を配置した状態で加熱する加熱工程とを備える。以下、各工程について説明する。
混合物層形成工程では、バルブ金属を含む誘電体粒子とバインダーとの混合物層をアルミニウム材の表面上に形成する。
加熱工程では、炭化水素含有物質を含む空間に混合物層が形成されたアルミニウム材を配置した状態で加熱する。この場合、混合物層が表面に形成されたアルミニウム材を、必要であれば乾燥し、その後、炭化水素含有物質を含む雰囲気中で熱処理する。
粉末X線回折法で測定された平均粒子径が10nmの酸化チタン粒子(誘電体粒子に相当)2質量部を、表1に示された各種バインダー1質量部と各種溶媒7質量部(実施例2〜5においてトルエンとメチルエチルケトンとの混合比は1:1)に混合して分散させ、固形分30質量%の誘電体粒子とバインダーとの混合物である塗工液を調製した。これらの塗工液を厚みが30μmで純度が99.3質量%のアルミニウム箔の両面に塗布することにより、誘電体粒子とバインダーとの混合物層をアルミニウム箔の表面上に形成し、空気中にて150℃の温度で30秒間加熱することにより乾燥させた(混合物層形成工程)。その後、当該混合物層が表面に形成されたアルミニウム箔をメタンガス雰囲気中に配置し、メタンガス雰囲気中に配置されたアルミニウム箔を550℃の温度で10時間加熱することにより(加熱工程)、本発明の電極構造体を得た。なお、加熱工程後のアルミニウム箔の表面上に形成された誘電体層の厚みは、表1に示すように1〜3μmの範囲内であった。
実施例2で得られた電極構造体を空気中に配置し、200℃の温度で5時間加熱することにより、実施例6の電極構造体を得た。
実施例7においては粉末X線回折法で測定された平均粒子径が25nmの酸化タンタル(Ta2O5)粒子、実施例8においては粉末X線回折法で測定された平均粒子径が20nmの酸化ニオブ(Nb2O5)粒子(それぞれ誘電体粒子に相当)2質量部を、表1に示すようにバインダーとしてポリビニルブチラール系バインダー1質量部と、表1に示すように溶媒としてトルエンとメチルエチルケトンの混合溶媒7質量部(実施例7〜8のいずれもトルエンとメチルエチルケトンとの混合比は1:1)に混合して分散させ、固形分30質量%の誘電体粒子とバインダーとの混合物である塗工液を調製した。これらの塗工液を厚みが30μmで純度が99.3質量%のアルミニウム箔の両面に塗布することにより、誘電体粒子とバインダーとの混合物層をアルミニウム箔の表面上に形成し、空気中にて150℃の温度で30秒間加熱することにより乾燥させた(混合物層形成工程)。その後、当該混合物層が表面に形成されたアルミニウム箔をメタンガス雰囲気中に配置し、メタンガス雰囲気中に配置されたアルミニウム箔を550℃の温度で10時間加熱することにより(加熱工程)、本発明の電極構造体を得た。なお、加熱工程後のアルミニウム箔の表面上に形成された誘電体層の厚みは、表1に示すように3μmであった。
実施例1〜8で用いたのと同じアルミニウム箔を、下記のチタンアルコキシド溶液に3秒間浸漬した後、空気中にて温度100℃で10分間加熱することにより乾燥させた。
Ti(n−OC4H9)4:0.15モル、CH3COCH2COCH3:0.45モル、
C2H5OH:18モル、H2O:0.3モル。
粉末X線回折法で測定された平均粒子径が10nmの酸化チタン粒子(誘電体粒子に相当)2質量部を、水8質量部に分散させ、固形分20質量%の塗工液を調製した。この塗工液を厚みが30μmで純度が99.3質量%のアルミニウム箔の両面に塗布することにより、酸化チタン粒子をアルミニウム箔の表面上に形成し、空気中にて150℃の温度で30秒間加熱することにより乾燥させた(本発明の混合物層形成工程においてバインダーを含有しないものに相当)。その後、酸化チタン粒子層が表面に形成されたアルミニウム材をメタンガス雰囲気中に配置し、メタンガス雰囲気中に配置されたアルミニウム材を550℃の温度で10時間加熱した(加熱工程)。なお、加熱工程後のアルミニウム箔の表面上に形成された誘電体層の厚みは、表1に示すように1μmであった。
静電容量を測定するための試料作製と静電容量の測定方法は、EIAJ規格に定める電解コンデンサ用極低圧用化成箔の静電容量測定方法に基づいて行った。
テーピング法によって評価した。具体的には、幅10mm、長さ100mmの短冊状試料を作製し、誘電体層の表面に、幅15mm、長さ120mmの接着面を有する粘着テープ(住友スリーM株式会社製、商品名「スコッチテープ」)を押し当てた後、粘着テープを引き剥がして、粘着性を次の式に従って評価した。
Claims (8)
- アルミニウム材と、
前記アルミニウム材の表面上に形成された誘電体層と、
前記アルミニウム材と前記誘電体層との間で前記アルミニウム材の表面の少なくとも一部の領域に形成された、アルミニウムと炭素を含む介在層とを備え、
前記誘電体層は、バルブ金属を含む誘電体粒子を含み、
前記誘電体粒子の表面の少なくとも一部に有機物層が形成され、
前記誘電体粒子の粒子径は、5nm以上100nm以下である、電極構造体。 - アルミニウム材と、
前記アルミニウム材の表面上に形成された誘電体層と、
前記アルミニウム材と前記誘電体層との間で前記アルミニウム材の表面の少なくとも一部の領域に形成された、アルミニウムと炭素を含む介在層とを備え、
前記誘電体層は、バルブ金属を含む誘電体粒子を含み、
前記誘電体粒子の表面の少なくとも一部に有機物層が形成され、
前記有機物層の厚みは、1nm以上50nm以下である、電極構造体。 - 前記バルブ金属は、チタン、タンタル、ハフニウム、ジルコニウムおよびニオブからなる群より選ばれたいずれか一種以上である、請求項1または請求項2に記載の電極構造体。
- 前記誘電体層の厚みは、0.5μm以上である、請求項1または請求項2に記載の電極構造体。
- 前記介在層は、結晶化したアルミニウムの炭化物を含む、請求項1または請求項2に記載の電極構造体。
- 前記介在層は、アルミニウム酸化物を含む、請求項1または請求項2に記載の電極構造体。
- 請求項1または請求項2に記載の電極構造体を備えた、コンデンサ。
- 請求項1または請求項2に記載の電極構造体を備えた、電池。
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CN103748716A (zh) | 2011-07-29 | 2014-04-23 | 株式会社Uacj | 集电体、电极结构体、非水电解质电池、蓄电部件及硝化棉类树脂材料 |
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