JP5725460B2 - スパッタリング装置 - Google Patents

スパッタリング装置 Download PDF

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Publication number
JP5725460B2
JP5725460B2 JP2012503125A JP2012503125A JP5725460B2 JP 5725460 B2 JP5725460 B2 JP 5725460B2 JP 2012503125 A JP2012503125 A JP 2012503125A JP 2012503125 A JP2012503125 A JP 2012503125A JP 5725460 B2 JP5725460 B2 JP 5725460B2
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JP
Japan
Prior art keywords
shield member
targets
target
sputtering apparatus
erosion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2012503125A
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English (en)
Japanese (ja)
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JPWO2011108489A1 (ja
Inventor
鉄兵 中島
鉄兵 中島
正健 金
正健 金
炳和 鄭
炳和 鄭
尚浩 李
尚浩 李
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to JP2012503125A priority Critical patent/JP5725460B2/ja
Publication of JPWO2011108489A1 publication Critical patent/JPWO2011108489A1/ja
Application granted granted Critical
Publication of JP5725460B2 publication Critical patent/JP5725460B2/ja
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3441—Dark space shields

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP2012503125A 2010-03-01 2011-02-28 スパッタリング装置 Active JP5725460B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012503125A JP5725460B2 (ja) 2010-03-01 2011-02-28 スパッタリング装置

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2010044796 2010-03-01
JP2010044796 2010-03-01
PCT/JP2011/054503 WO2011108489A1 (ja) 2010-03-01 2011-02-28 スパッタリング装置
JP2012503125A JP5725460B2 (ja) 2010-03-01 2011-02-28 スパッタリング装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014255498A Division JP5921048B2 (ja) 2010-03-01 2014-12-17 スパッタリング方法

Publications (2)

Publication Number Publication Date
JPWO2011108489A1 JPWO2011108489A1 (ja) 2013-06-27
JP5725460B2 true JP5725460B2 (ja) 2015-05-27

Family

ID=44542141

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2012503125A Active JP5725460B2 (ja) 2010-03-01 2011-02-28 スパッタリング装置
JP2014255498A Active JP5921048B2 (ja) 2010-03-01 2014-12-17 スパッタリング方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2014255498A Active JP5921048B2 (ja) 2010-03-01 2014-12-17 スパッタリング方法

Country Status (5)

Country Link
JP (2) JP5725460B2 (ko)
KR (2) KR101964487B1 (ko)
CN (1) CN102782182B (ko)
TW (1) TWI502091B (ko)
WO (1) WO2011108489A1 (ko)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104169456B (zh) 2012-03-14 2016-06-08 佳能安内华股份有限公司 溅镀装置
KR102081597B1 (ko) * 2012-12-21 2020-04-16 엘지디스플레이 주식회사 스퍼터링 장치 및 산화물 반도체 물질의 스퍼터링 방법
KR102359244B1 (ko) 2016-11-21 2022-02-08 한국알박(주) 막 증착 방법
KR102376098B1 (ko) * 2018-03-16 2022-03-18 가부시키가이샤 알박 성막 방법
EP3778983A4 (en) * 2018-03-30 2021-05-26 JFE Steel Corporation TARGET EXCHANGE DEVICE AND SURFACE TREATMENT SYSTEM
KR102412503B1 (ko) * 2018-06-28 2022-06-23 한국알박(주) 스퍼터링 장치
KR102351170B1 (ko) 2018-06-28 2022-01-14 가부시키가이샤 알박 스퍼터 성막 장치
JP7263111B2 (ja) * 2019-05-13 2023-04-24 株式会社アルバック スパッタ成膜装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001214262A (ja) * 2000-01-28 2001-08-07 Toshiba Corp スパッタ装置および半導体装置の製造方法
JP2008001988A (ja) * 2006-06-23 2008-01-10 Applied Materials Inc 改善されたｐｖｄターゲット
JP2009263744A (ja) * 2008-04-28 2009-11-12 Canon Anelva Corp スパッタ成膜方法、電子素子の製造方法、スパッタ装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6783638B2 (en) * 2001-09-07 2004-08-31 Sputtered Films, Inc. Flat magnetron
US20070012557A1 (en) * 2005-07-13 2007-01-18 Applied Materials, Inc Low voltage sputtering for large area substrates
JP5265149B2 (ja) 2006-07-21 2013-08-14 アプライド マテリアルズ インコーポレイテッド マルチカソード設計用冷却暗部シールド
JP4769181B2 (ja) * 2006-12-18 2011-09-07 株式会社東芝 ターゲットとバッキングプレート
KR101083443B1 (ko) * 2007-03-01 2011-11-14 가부시키가이샤 알박 박막 형성 방법 및 박막 형성 장치
JP2009275281A (ja) * 2008-05-19 2009-11-26 Panasonic Corp スパッタリング方法及び装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001214262A (ja) * 2000-01-28 2001-08-07 Toshiba Corp スパッタ装置および半導体装置の製造方法
JP2008001988A (ja) * 2006-06-23 2008-01-10 Applied Materials Inc 改善されたｐｖｄターゲット
JP2009263744A (ja) * 2008-04-28 2009-11-12 Canon Anelva Corp スパッタ成膜方法、電子素子の製造方法、スパッタ装置

Also Published As

Publication number Publication date
JPWO2011108489A1 (ja) 2013-06-27
TW201202456A (en) 2012-01-16
JP5921048B2 (ja) 2016-05-24
WO2011108489A1 (ja) 2011-09-09
JP2015092025A (ja) 2015-05-14
CN102782182A (zh) 2012-11-14
KR20150003915A (ko) 2015-01-09
TWI502091B (zh) 2015-10-01
KR20120130335A (ko) 2012-11-30
KR101964487B1 (ko) 2019-04-02
CN102782182B (zh) 2015-09-09

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